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公开(公告)号：US20090146180A1
公开(公告)日：2009-06-11
申请号：US11951702
申请日：2007-12-06
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/161 , H01L29/165 , H01L29/66659 , H01L29/7781
摘要： A method of forming a metal oxide semiconductor (MOS) device comprises defining an active area in an unstrained semiconductor layer structure, depositing a hard mask overlying the active area and a region outside of the active area, patterning the hard mask to expose the active area, selectively growing a strained semiconductor layer overlying the exposed active area, and forming a remainder of the MOS device. The active area includes a first doped region of first conductivity type and a second doped region of second conductivity type. The strained semiconductor layer provides a biaxially strained channel for the MOS device. During a portion of forming the remainder of the MOS device, dopant of the first conductivity type of the first doped region of the active area and dopant of the second conductivity type of the second doped region of the active area diffuses into overlying portions of the strained semiconductor layer to create a correspondingly doped strained semiconductor layer, thereby providing corresponding doping for the biaxially strained channel.
摘要翻译： 一种形成金属氧化物半导体（MOS）器件的方法包括：在非限制性半导体层结构中限定有源区，沉积覆盖有源区的硬掩模和有源区外的区域，使硬掩模图形化以暴露有源区 选择性地生长覆盖暴露的有源区的应变半导体层，以及形成MOS器件的其余部分。 有源区包括第一导电类型的第一掺杂区和第二导电类型的第二掺杂区。 应变半导体层为MOS器件提供双向应变通道。 在形成MOS器件的其余部分的部分期间，有源区的第一掺杂区的第一导电类型的掺杂剂和有源区的第二掺杂区的第二导电类型的掺杂剂扩散到应变的上覆部分 以产生相应掺杂的应变半导体层，从而为双轴应变通道提供相应的掺杂。
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公开(公告)号：US07411270B2
公开(公告)日：2008-08-12
申请号：US11397493
申请日：2006-04-03
申请人： Won Gi Min , Geno L. Fallico , Amanda M. Kroll , Hongning Yang , Jiang-Kai Zuo
发明人： Won Gi Min , Geno L. Fallico , Amanda M. Kroll , Hongning Yang , Jiang-Kai Zuo
IPC分类号： H01L27/04
CPC分类号： H01G4/33 , H01G4/236 , H01L23/5223 , H01L27/0805 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An electronic assembly (98) includes a substrate (20), a capacitor having first and second conductors (38,54) formed over the substrate, a first set of conductive members (76) formed over the substrate and being electrically connected to the first conductor of the capacitor, and a second set of conductive members (78) formed over the substrate and being electrically connected to the second conductor of the capacitor.
摘要翻译： 电子组件（98）包括衬底（20），具有形成在衬底上的第一和第二导体（38,54）的电容器，形成在衬底上并且电连接到第一衬底的第一组导电构件（76） 电容器的导体，以及形成在衬底上并且电连接到电容器的第二导体的第二组导电构件（78）。
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公开(公告)号：US07645651B2
公开(公告)日：2010-01-12
申请号：US11951702
申请日：2007-12-06
IPC分类号： H01L21/00 , H01L21/84 , H01L21/337 , H01L21/8238 , H01L21/8236 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/161 , H01L29/165 , H01L29/66659 , H01L29/7781
摘要： A method of forming a metal oxide semiconductor (MOS) device comprises defining an active area in an unstrained semiconductor layer structure, depositing a hard mask overlying the active area and a region outside of the active area, patterning the hard mask to expose the active area, selectively growing a strained semiconductor layer overlying the exposed active area, and forming a remainder of the MOS device. The active area includes a first doped region of first conductivity type and a second doped region of second conductivity type. The strained semiconductor layer provides a biaxially strained channel for the MOS device. During a portion of forming the remainder of the MOS device, dopant of the first conductivity type of the first doped region of the active area and dopant of the second conductivity type of the second doped region of the active area diffuses into overlying portions of the strained semiconductor layer to create a correspondingly doped strained semiconductor layer, thereby providing corresponding doping for the biaxially strained channel.
摘要翻译： 一种形成金属氧化物半导体（MOS）器件的方法包括：在非限制性半导体层结构中限定有源区，沉积覆盖有源区的硬掩模和有源区外的区域，使硬掩模图形化以暴露有源区 选择性地生长覆盖暴露的有源区的应变半导体层，以及形成MOS器件的其余部分。 有源区包括第一导电类型的第一掺杂区和第二导电类型的第二掺杂区。 应变半导体层为MOS器件提供双向应变通道。 在形成MOS器件的其余部分的部分期间，有源区的第一掺杂区的第一导电类型的掺杂剂和有源区的第二掺杂区的第二导电类型的掺杂剂扩散到应变的上覆部分 以产生相应掺杂的应变半导体层，从而为双轴应变通道提供相应的掺杂。
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