SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

    公开(公告)号:US20210005563A1

    公开(公告)日:2021-01-07

    申请号:US16504236

    申请日:2019-07-06

    Abstract: In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

    Semiconductor device and method of manufacturing semiconductor device

    公开(公告)号:US11342276B2

    公开(公告)日:2022-05-24

    申请号:US16422771

    申请日:2019-05-24

    Abstract: In one example, an electronic device structure includes a substrate having a conductive structure adjacent to a surface. The conductive structure can include a plurality of conductive pads. First and second electronic devices are disposed adjacent to the top surface. The first electronic device is interposed between a first conductive pad and a second conductive pad, and the second electronic device is interposed between the second conductive pad and a third conductive pad. A continuous wire structure including a first bond structure is connected to the first conductive pad, a second bond structure is connected to the second conductive pad, a third bond structure is connected to the third conductive pad, a first wire portion is interconnected between the first bond structure and the second bond structure and disposed to overlie the first electronic device, and a second wire portion is interconnected between the second bond structure and the third bond structure and disposed to overlie the second electronic device. Other examples and related methods are also disclosed herein.

    Semiconductor devices and methods of manufacturing semiconductor devices

    公开(公告)号:US11121105B2

    公开(公告)日:2021-09-14

    申请号:US16504236

    申请日:2019-07-06

    Abstract: In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

    SEMICONDUCTOR CHIP TESTING APPARATUS
    5.
    发明申请
    SEMICONDUCTOR CHIP TESTING APPARATUS 有权
    半导体芯片测试设备

    公开(公告)号:US20160154023A1

    公开(公告)日:2016-06-02

    申请号:US14687141

    申请日:2015-04-15

    CPC classification number: G01R1/0466 G01R31/2891

    Abstract: A semiconductor chip testing apparatus is disclosed. The semiconductor chip testing apparatus includes: an upper socket unit which is formed therein with a receiving space receiving an upper semiconductor chip, holds a lower semiconductor chip using a suction airflow passing around the upper semiconductor chip in the receiving space, and electrically connects the lower semiconductor chip to the upper semiconductor chip; a blade block coupled to the upper socket unit to deliver a vacuum pressure for generating the suction airflow in the receiving space; and a lower socket unit on which the lower semiconductor chip held by the upper socket unit is seated, and which is electrically connected to the seated lower semiconductor chip.

    Abstract translation: 公开了一种半导体芯片测试装置。 半导体芯片测试装置包括:上插座单元,其中形成有容纳上半导体芯片的接收空间,使用在接收空间中穿过上半导体芯片的吸入气流保持下半导体芯片,并且将下部半导体芯片电连接 半导体芯片到上半导体芯片; 叶片块,其联接到所述上插座单元以递送用于在所述接收空间中产生吸入气流的真空压力; 以及下插座单元,其上由上插座单元保持的下半导体芯片就座在其上,并且电连接到就座的下半导体芯片。

    Semiconductor device and method of manufacturing semiconductor device

    公开(公告)号:US11352252B2

    公开(公告)日:2022-06-07

    申请号:US16448901

    申请日:2019-06-21

    Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20200373247A1

    公开(公告)日:2020-11-26

    申请号:US16422771

    申请日:2019-05-24

    Abstract: In one example, an electronic device structure includes a substrate having a conductive structure adjacent to a surface. The conductive structure can include a plurality of conductive pads. First and second electronic devices are disposed adjacent to the top surface. The first electronic device is interposed between a first conductive pad and a second conductive pad, and the second electronic device is interposed between the second conductive pad and a third conductive pad. A continuous wire structure including a first bond structure is connected to the first conductive pad, a second bond structure is connected to the second conductive pad, a third bond structure is connected to the third conductive pad, a first wire portion is interconnected between the first bond structure and the second bond structure and disposed to overlie the first electronic device, and a second wire portion is interconnected between the second bond structure and the third bond structure and disposed to overlie the second electronic device. Other examples and related methods are also disclosed herein.

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