摘要:
The present invention is a micro-machined electrode for neural-electronic interfaces which can achieve a ten times lower impedance and higher charge injection limit for a given material and planar area.
摘要:
The present invention is a micro-machined electrode for neural-electronic interfaces which can achieve a ten times lower impedance and higher charge injection limit for a given material and planar area.
摘要:
The present invention is a micro-machined electrode for neural-electronic interfaces which can achieve a ten times lower impedance and higher charge injection limit for a given material and planar area.
摘要:
The present invention is a micro-machined electrode for neural-electronic interfaces which can achieve a ten times lower impedance and higher charge injection limit for a given material and planar area.
摘要:
The present invention is a micro-machined electrode for neural-electronic interfaces which can achieve a ten times lower impedance and higher charge injection limit for a given material and planar area.
摘要:
A frame rate converter that receives segments having an input frame rate and provides the segments at a rate of N times the frame rate, where each segment is selected from a group consisting of a frame or field, including: a storage device which stores the segments, where the segments include a first, second, and third segments; and a display device coupled to receive the segments from the storage device and to provide the first, second, and third segments, where the display device provides the first segment and then provides the second segment following completion of providing the first segment where the second segment is previously available or otherwise again provides the first segment. The frame rate converter further includes a decoder device, where the third segment includes a field that includes a top line of an alternate frame and is encoded in 3:2 format and where the decoder device adjusts a time stamp of the third segment.