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公开(公告)号:US20160064576A1
公开(公告)日:2016-03-03
申请号:US14939633
申请日:2015-11-12
申请人: Andy Luan , David D. Smith , Peter John Cousins , Sheng Sun
发明人: Andy Luan , David D. Smith , Peter John Cousins , Sheng Sun
IPC分类号: H01L31/02 , H01L31/0216
CPC分类号: H01L31/02008 , H01L31/02167 , H01L31/02168 , H01L31/0682 , Y02E10/547
摘要: Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
摘要翻译: 描述了用于太阳能电池的泄漏路径层和形成用于太阳能电池的泄漏路径层的方法。
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公开(公告)号:US20110240105A1
公开(公告)日:2011-10-06
申请号:US12750320
申请日:2010-03-30
申请人: Andy Luan , David Smith , Peter Cousins , Sheng Sun
发明人: Andy Luan , David Smith , Peter Cousins , Sheng Sun
CPC分类号: H01L31/02008 , H01L31/02167 , H01L31/02168 , H01L31/0682 , Y02E10/547
摘要: Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
摘要翻译: 描述了用于太阳能电池的泄漏路径层和形成用于太阳能电池的泄漏路径层的方法。
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公开(公告)号:US09202960B2
公开(公告)日:2015-12-01
申请号:US12750320
申请日:2010-03-30
申请人: Andy Luan , David Smith , Peter Cousins , Sheng Sun
发明人: Andy Luan , David Smith , Peter Cousins , Sheng Sun
IPC分类号: H01L31/042 , H01L31/068 , H01L31/0216
CPC分类号: H01L31/02008 , H01L31/02167 , H01L31/02168 , H01L31/0682 , Y02E10/547
摘要: Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
摘要翻译: 描述了用于太阳能电池的泄漏路径层和形成用于太阳能电池的泄漏路径层的方法。
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4.
公开(公告)号:US20050287771A1
公开(公告)日:2005-12-29
申请号:US11065464
申请日:2005-02-24
申请人: Martin Seamons , Wendy Yeh , Sudha Rathi , Deenesh Padhi , Andy Luan , Sum-Yee Tang , Priya Kulkarni , Visweswaren Sivaramakrishnan , Bok Kim , Hichem M'Saad , Yuxiang Wang , Michael Kwan
发明人: Martin Seamons , Wendy Yeh , Sudha Rathi , Deenesh Padhi , Andy Luan , Sum-Yee Tang , Priya Kulkarni , Visweswaren Sivaramakrishnan , Bok Kim , Hichem M'Saad , Yuxiang Wang , Michael Kwan
IPC分类号: C23C16/505 , H01L21/314 , H01L21/768 , H01L21/20 , H01L21/205 , H01L21/36
CPC分类号: C23C16/505 , H01L21/3146 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76829
摘要: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.
摘要翻译: 提供用于沉积无定形碳材料的方法。 一方面,本发明提供了一种处理衬底的方法,包括将衬底定位在处理室中,将处理气体引入处理室,其中处理气体包括载气,氢气和一种或多种前体化合物,产生 处理气体的等离子体,通过从双频RF源施加电力,以及在基板上沉积无定形碳层。
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5.
公开(公告)号:US06764926B2
公开(公告)日:2004-07-20
申请号:US10106472
申请日:2002-03-25
申请人: Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan , Andy Luan
发明人: Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan , Andy Luan
IPC分类号: H01L2100
CPC分类号: C30B25/02 , C23C16/301 , C23C16/4401 , C23C16/4405 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/02579 , H01L21/0262
摘要: A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.
摘要翻译: 提出了一种制造高品质InGaAsN半导体器件的方法。 该方法允许使用单个MOCVD反应器制造高质量的InGaAsN半导体器件,同时避免铝污染。
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