公开(公告)号：US07794225B2

公开(公告)日：2010-09-14

申请号：US11860182

申请日：2007-09-24

申请人： Atsuo Hattori

发明人： Atsuo Hattori

IPC分类号： B29C59/00 ,  G03F7/26

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0017

摘要： A fine mold comprises a regeneration target film forming a convex part of a formation surface, and a light shielding unit that is configured deeper than a bottom of the formation surface and that regenerates the regeneration target film. A manufacturing cost of a product having a three-dimensional structure can be reduced.

摘要翻译： 精细模具包括形成形成表面的凸部的再生目标膜和被配置为比形成表面的底部更深并再生再生目标膜的遮光单元。 可以减少具有三维结构的产品的制造成本。

公开(公告)号：US20100117268A1

公开(公告)日：2010-05-13

申请号：US12691685

申请日：2010-01-21

申请人： ATSUO HATTORI

发明人： ATSUO HATTORI

IPC分类号： B29C59/16 ,  B29C33/42

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0017

摘要： A fine mold comprises a regeneration target film forming a convex part of a formation surface, and a light shielding unit that is configured deeper than a bottom of the formation surface and that regenerates the regeneration target film. A manufacturing cost of a product having a three-dimensional structure can be reduced.

摘要翻译： 精细模具包括形成形成表面的凸部的再生目标膜和被配置为比形成表面的底部更深并再生再生目标膜的遮光单元。 可以减少具有三维结构的产品的制造成本。

公开(公告)号：US20090320597A1

公开(公告)日：2009-12-31

申请号：US12486278

申请日：2009-06-17

申请人： ATSUO HATTORI

发明人： ATSUO HATTORI

IPC分类号： G01P15/00

CPC分类号： G01P15/123 ,  G01P15/18

摘要： Provided that an x-axis, a y-axis and a z-axis are three axes of a rectangular coordinate system, a micro electro mechanical systems element comprises a support section whose length in the y-direction is shorter than a length in the x-direction, parallel arranged two film-like beam sections whose length in the y-direction is shorter than a length in the x-direction, a weight section, whose length in the y-direction is shorter than a length in the x-direction, spanning centers of the two beam sections and comprising a connecting part spanning the two beam sections, two projection parts projecting to opposite directions from the connecting part in a space between the two beam sections, and a plurality of distortion detectors which are placed on each beam section and detect distortion corresponding to deformation of the beam sections to measure xyz components of a vector corresponding to force acting on the weight section.

摘要翻译： 假设x轴，y轴和z轴是直角坐标系的三个轴，微机电系统元件包括一个支撑部分，其长度在y方向上短于x的长度 在y方向上的长度比x方向的长度短的平行布置的两个膜状束部分，y方向的长度比x方向的长度短的重量部 跨越两个光束部分的中心，并且包括跨越两个光束部分的连接部分，两个突出部分从两个光束部分之间的空间中的连接部分向​​相反方向突出，并且多个失真检测器被放置在每个 并且检测对应于梁部分的变形的变形，以测量对应于作用在重物部分上的力的矢量的xyz分量。

公开(公告)号：US07548082B2

公开(公告)日：2009-06-16

申请号：US10553580

申请日：2004-04-15

申请人： Michinobu Tanioka ,  Atsuo Hattori

发明人： Michinobu Tanioka ,  Atsuo Hattori

IPC分类号： G01R31/02

CPC分类号： G01R1/07342 ,  G01R1/06727

摘要： A conventional inspection probe has posed such problems that, when a pitch is as fine as up to 40 μm, a positional accuracy is difficult to ensure depending on constituting materials and a production method, pin breaking occurs when fine-diameter pins contact, a good contact cannot be obtained due to an insufficient contact, an durability is insufficient. An inspection probe having a probe structure comprising an elastic probe pin, a wiring layer carrying substrate, a backup plate to install a substrate thereon, an inspection substrate and a flexible substrate, characterized in that a good-contact material layer according to the electrode material of a semiconductor device is formed at the tip end of a probe pin and a wiring layer has a structure formed of a low-resistance metal layer, with the good-contact material layer being separated from the low-resistance metal layer. Such a structure can provide very high contact reliability and mechanical durability at a pitch as very fine as up to 40 μm.

摘要翻译： 传统的检查探针存在这样的问题：当间距最高达40μm时，根据构成材料和制造方法难以确保位置精度，当细直径销接触时发生销断裂 由于接触不足而无法获得接触，耐久性不足。 一种具有探针结构的检查探针，包括弹性探针，布线层承载基板，在其上安装基板的支撑板，检查基板和柔性基板，其特征在于，根据所述电极材料的良好接触材料层 的半导体器件形成在探针的顶端，并且布线层具有由低电阻金属层形成的结构，良好接触材料层与低电阻金属层分离。 这种结构可以提供非常高的接触可靠性和机械耐久性，其间距非常细，最高达40μm。

公开(公告)号：US20060208752A1

公开(公告)日：2006-09-21

申请号：US10553580

申请日：2004-04-15

申请人： Michinobu Tanioka ,  Atsuo Hattori

发明人： Michinobu Tanioka ,  Atsuo Hattori

IPC分类号： G01R31/02

CPC分类号： G01R1/07342 ,  G01R1/06727

摘要： A conventional inspection probe has posed such problems that, when a pitch is as fine as up to 40 μm, a positional accuracy is difficult to ensure depending on constituting materials and a production method, pin breaking occurs when fine-diameter pins contact, a good contact cannot be obtained due to an insufficient contact, an durability is insufficient. An inspection probe having a probe structure comprising an elastic probe pin, a wiring layer carrying substrate, a backup plate to install a substrate thereon, an inspection substrate and a flexible substrate, characterized in that a good-contact material layer according to the electrode material of a semiconductor device is formed at the tip end of a probe pin and a wiring layer has a structure formed of a low-resistance metal layer, with the good-contact material layer being separated from the low-resistance metal layer. Such a structure can provide very high contact reliability and mechanical durability at a pitch as very fine as up to 40 μm.

公开(公告)号：US06328904B1

公开(公告)日：2001-12-11

申请号：US09460358

申请日：1999-12-13

申请人： Atsuo Hattori ,  Chiharu Iriguchi

发明人： Atsuo Hattori ,  Chiharu Iriguchi

IPC分类号： B44C122

CPC分类号： H01J9/025 ,  H01J31/126

摘要： A method of manufacturing a field emission element comprises steps of: (a) forming a base layer comprising a gate film being capable of chemical reaction accompanied by volume expansion; (b) forming an insulating film on said base layer; (c) forming a taper-shaped first hole in said insulating film; (d) forming a second hole in said gate film by anisotropically etching said gate film using said insulating film as a mask; (e) reacting a part of a surface layer of said gate film to form a volume-expanded film by chemical reaction; (f) forming an emitter film made of an electrically conductive material on said insulating film and said expanded film; and (g) exposing said emitter film and said gate film by removing unnecessary parts comprising said substrate and said expanded film.

摘要翻译： 制造场发射元件的方法包括以下步骤：（a）形成包括能够伴随体积膨胀的化学反应的栅极膜的基底层; （b）在所述基底层上形成绝缘膜; （c）在所述绝缘膜中形成锥形的第一孔; （d）使用所述绝缘膜作为掩模通过各向异性蚀刻所述栅极膜，在所述栅极膜中形成第二孔; （e）使所述栅极膜的表面层的一部分与化学反应形成体积膨胀膜; （f）在所述绝缘膜和所述扩展膜上形成由导电材料制成的发射极膜; 和（g）通过去除包括所述基底和所述扩张膜的不必要部分来暴露所述发射极膜和所述栅极膜。

公开(公告)号：US6096570A

公开(公告)日：2000-08-01

申请号：US335643

申请日：1999-06-18

申请人： Atsuo Hattori

发明人： Atsuo Hattori

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L29/66 ,  H01L21/00

CPC分类号： H01J9/025 ,  H01J2329/00

摘要： A method of manufacturing a field emission element includes the steps of: forming a surface insulating layer including a conductive gate film on a substrate; forming a hole in the surface insulating layer by partially removing the surface insulating layer; forming a side spacer on an inner wall of the hole and forming a gate hole in the conductive gate film, the side spacer serving as a first sacrificial film; forming a second sacrificial film on surfaces of the surface insulating layer and the side space and on a bottom surface of the gate hole, to a thickness so as to form a flat upper surface area of the second sacrificial film above the gate hole; forming a conductive first emitter film on a whole surface of the second sacrificial film; forming a conductive second emitter film by disposing a conductive ultra-fine particle group on the first emitter film and baking the ultra-fine particle group; and exposing a tip portion of the second emitter film on a side of the flat upper surface area of the first emitter film, by etching and removing an unnecessary portion including a portion of the first emitter film near the flat upper surface area. A degree of freedom of controlling the height of an emitter tip can be broadened.

摘要翻译： 制造场发射元件的方法包括以下步骤：在衬底上形成包括导电栅极膜的表面绝缘层; 通过部分去除表面绝缘层在表面绝缘层中形成孔; 在所述孔的内壁上形成侧面间隔物，并在所述导电栅极膜中形成栅极孔，所述侧面间隔物用作第一牺牲膜; 在所述表面绝缘层和所述栅极孔的所述侧面空间的表面上形成第二牺牲膜至所述栅极孔上方形成所述第二牺牲膜的平坦的上表面积的厚度; 在所述第二牺牲膜的整个表面上形成导电的第一发射极膜; 通过在第一发射极膜上设置导电性超细粒子群并烘烤超微粒子组而形成导电的第二发射体膜; 以及通过在平坦的上表面区域附近蚀刻除去包括第一发射极膜的一部分的不必要部分，使第二发射膜的前端部暴露在第一发射膜的平坦的上表面区域的一侧。 可以扩大控制发射器尖端的高度的自由度。

公开(公告)号：US06074264A

公开(公告)日：2000-06-13

申请号：US290838

申请日：1999-04-13

申请人： Atsuo Hattori

发明人： Atsuo Hattori

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC分类号： H01J9/025

摘要： A method of manufacturing a field emission element includes the steps of: forming a conductive gate electrode film on a substrate; forming an insulating film on the gate electrode film; forming a hole in the insulating film and the gate electrode through etching by using a resist pattern as a mask; forming a first sacrificial film covering the insulating film and the substrate; etching back the first sacrificial film to leave a side spacer on the side wall of the hole of the gate electrode forming a second sacrificial film covering and the substrate; forming a conductive emitter electrode on the second sacrificial film; and removing a portion of the second sacrificial film to expose at least a portion of the emitter electrode film and a portion of the gate electrode film.

摘要翻译： 场致发射元件的制造方法包括以下步骤：在基板上形成导电栅电极膜; 在栅电极膜上形成绝缘膜; 通过使用抗蚀剂图案作为掩模通过蚀刻在绝缘膜和栅电极中形成孔; 形成覆盖绝缘膜和基板的第一牺牲膜; 蚀刻第一牺牲膜以在栅电极的孔的侧壁上留下形成第二牺牲膜覆盖物和衬底的侧隔离物; 在所述第二牺牲膜上形成导电发射极; 以及去除所述第二牺牲膜的一部分以暴露所述发射电极膜的至少一部分和所述栅电极膜的一部分。

公开(公告)号：US5993277A

公开(公告)日：1999-11-30

申请号：US123838

申请日：1998-07-28

申请人： Atsuo Hattori

发明人： Atsuo Hattori

IPC分类号： H01J9/02

CPC分类号： H01J9/025

摘要： A method for manufacturing a field emission device includes the steps of: forming a first sacrificial film on a substrate; forming a recess which has side walls almost perpendicular to the first sacrificial film and which extends up to the substrate; forming a second sacrificial film on the first sacrificial film and in the recess; etching back the second sacrificial film so as to leave side spacers on the side walls of the recess; forming a first conductive film as a gate electrode on the first sacrificial film, the side spacers and an exposed part of the substrate; etching back the first conductive film so as to expose the substrate at the bottom of the recess; forming a first insulation film on the first conductive film; forming a second conductive film as an emitter electrode on the first insulation film; and exposing an end portion of the second conductive film.

摘要翻译： 一种场致发射器件的制造方法包括以下步骤：在衬底上形成第一牺牲膜; 形成具有大致垂直于第一牺牲膜并且延伸到基板的侧壁的凹部; 在所述第一牺牲膜和所述凹部中形成第二牺牲膜; 蚀刻第二牺牲膜以便在凹槽的侧壁上留下侧隔离物; 在所述第一牺牲膜上形成第一导电膜作为栅电极，所述侧间隔物和所述基板的暴露部分; 蚀刻第一导电膜以使基板暴露在凹部的底部; 在所述第一导电膜上形成第一绝缘膜; 在所述第一绝缘膜上形成作为发射极的第二导电膜; 并露出第二导电膜的端部。

公开(公告)号：US5885124A

公开(公告)日：1999-03-23

申请号：US778454

申请日：1997-01-03

申请人： Atsuo Hattori

发明人： Atsuo Hattori

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC分类号： H01J9/025

摘要： A method of fabricating a field emission element includes the steps of: forming an overhang portion in a substrate, the overhang portion including two opposing parts in cross section; depositing a sacrificial film on the overhang portion with two opposing parts, the sacrificial film including two opposing parts in cross section; chemically reacting the sacrificial film with two opposing parts to expand the volume of the sacrificial film and make the two opposing parts partially contact each other; depositing a field emission cathode film on the sacrificial film with contacted two opposing parts; and removing part of, or the whole of, the sacrificial film to expose a tip of the field emission cathode film.

摘要翻译： 一种制造场发射元件的方法包括以下步骤：在衬底中形成突出部分，所述突出部分包括横截面的两个相对部分; 在悬垂部分上用两个相对的部分沉积牺牲膜，牺牲膜包括两个相对部分的横截面; 使牺牲膜与两个相对的部分化学反应以扩大牺牲膜的体积并使两个相对部分彼此部分接触; 在具有接触的两个相对部分的牺牲膜上沉积场致发射阴极膜; 并且去除牺牲膜的一部分或全部以暴露场致发射阴极膜的尖端。