公开(公告)号：US08836147B2

公开(公告)日：2014-09-16

申请号：US13877224

申请日：2011-09-29

申请人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

发明人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC分类号： H01L23/48 ,  H01L25/065 ,  B23K20/00 ,  H01L23/00 ,  H01B1/02

CPC分类号： H01B1/026 ,  B23K20/007 ,  H01L23/48 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/05624 ,  H01L2224/32145 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/4851 ,  H01L2224/48511 ,  H01L2224/48599 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/73265 ,  H01L2224/76268 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/85045 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06565 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/3025 ,  Y02P70/605 ,  H01L2224/45678 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45144 ,  H01L2924/20752 ,  H01L2924/01204 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01083 ,  H01L2924/013 ,  H01L2924/00013

摘要： A bonding structure of a ball-bonded portion is obtained by bonding a ball portion formed on a front end of a multilayer copper bonding wire. The multilayer copper bonding wire includes a core member that is mainly composed of copper, and an outer layer that is formed on the core member and is mainly composed of at least one noble metal selected from a group of Pd, Au, Ag and Pt. Further, a first concentrated portion of such noble metal(s) is formed in a ball-root region located at a boundary with the copper bonding wire in a surface region of the ball-bonded portion.

摘要翻译： 通过将形成在多层铜接合线的前端上的球部接合而获得球接部分的接合结构。 多层铜键合线包括主要由铜构成的芯构件和形成在芯构件上的外层，主要由选自Pd，Au，Ag和Pt中的至少一种贵金属构成。 此外，在与球形接合部的表面区域中的铜接合线的边界处的球根区域中形成有这种贵金属的第一集中部分。

公开(公告)号：US08097960B2

公开(公告)日：2012-01-17

申请号：US12146792

申请日：2008-06-26

申请人： Shinichi Terashima ,  Tomohiro Uno ,  Kohei Tatsumi ,  Takashi Yamada ,  Atsuo Ikeda ,  Daizo Oda

发明人： Shinichi Terashima ,  Tomohiro Uno ,  Kohei Tatsumi ,  Takashi Yamada ,  Atsuo Ikeda ,  Daizo Oda

IPC分类号： H01L23/48

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05664 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48764 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/10253 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01013 ,  H01L2924/01004 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/01025 ,  H01L2924/013 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00015 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2224/4554

摘要： There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.

摘要翻译： 提供了不会引起倾斜故障等的接合线。 半导体安装接合线的断裂伸长率为7〜20％，伸长率为1％的应力为拉伸强度的90％以上且小于等于100％。

公开(公告)号：US20110104510A1

公开(公告)日：2011-05-05

申请号：US12866797

申请日：2009-07-10

申请人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

发明人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC分类号： B23K35/22

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48486 ,  H01L2224/48499 ,  H01L2224/48507 ,  H01L2224/48511 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85986 ,  H01L2225/06562 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10T428/12222 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/20645 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/01049

摘要： The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump.

摘要翻译： 本发明的目的在于提供铜基接合线的接合结构，实现低材料成本，在反向接合中的连续接合中的高生产率，用于凸块上的楔形接合，以及在高温加热，热循环中具有优异的可靠性 测试，回流测试，HAST测试等。 接合结构用于将接合线连接到形成在半导体器件的电极上的球凸点，接合线和分别包含铜作为其主要成分的球凸块。 接合结构包括设置在球凸块的接合部分和接合线的界面处的浓缩层A，其中浓缩层A中的铜以外的金属R的浓度不小于铜的平均浓度的十倍 球碰撞中的金属R; 以及集中层B，设置在所述球凸块的接合部的界面和所述电极之间，所述浓缩层B中的所述金属R的浓度不小于所述球凸块中的金属R的平均浓度的十倍 。

公开(公告)号：US08653668B2

公开(公告)日：2014-02-18

申请号：US13577199

申请日：2011-02-03

申请人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

发明人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC分类号： H01L23/49

CPC分类号： H01L24/48 ,  B23K35/0244 ,  B23K35/3046 ,  C22C9/00 ,  C22F1/08 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/01032 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/01049 ,  H01L2924/01203 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01204

摘要： A bonding structure and a copper bonding wire for semiconductor device include a ball-bonded portion formed by bonding to the aluminum electrode a ball formed on a front end of the copper bonding wire. After being heated at any temperature between 130° C. and 200° C., the ball-bonded portion exhibits a relative compound ratio R1 of 40-100%, the relative compound ratio R1 being a ratio of a thickness of a Cu—Al intermetallic compound to thicknesses of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of the ball-bonded portion.

摘要翻译： 用于半导体器件的接合结构和铜接合线包括通过将形成在铜接合线的前端上的球接合到铝电极而形成的滚珠接合部。 在130℃至200℃之间的任何温度下加热后，球形接合部分的相对化合物比率R1为40-100％，相对化合物比例R1为Cu-Al 金属间化合物与由Cu和Al组成并形成在球形接合部分的横截面上的金属间化合物的厚度。

公开(公告)号：US20090072399A1

公开(公告)日：2009-03-19

申请号：US12146792

申请日：2008-06-26

申请人： Shinichi Terashima ,  Tomohiro Uno ,  Kohei Tatsumi ,  Takashi Yamada ,  Atsuo Ikeda ,  Daizo Oda

发明人： Shinichi Terashima ,  Tomohiro Uno ,  Kohei Tatsumi ,  Takashi Yamada ,  Atsuo Ikeda ,  Daizo Oda

IPC分类号： H01L23/49

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05664 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48764 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/10253 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01013 ,  H01L2924/01004 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/01025 ,  H01L2924/013 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00015 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2224/4554

摘要： There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.

摘要翻译： 提供了不会引起倾斜故障等的接合线。 半导体安装接合线的断裂伸长率为7〜20％，伸长率为1％的应力为拉伸强度的90％以上且小于等于100％。

公开(公告)号：US4259602A

公开(公告)日：1981-03-31

申请号：US30138

申请日：1979-04-16

申请人： Hiroshi Kuribayashi ,  Atsuo Ikeda

发明人： Hiroshi Kuribayashi ,  Atsuo Ikeda

IPC分类号： H02K33/16 ,  G11B21/02 ,  H02K41/02 ,  H02K33/00

CPC分类号： H02K41/031

摘要： An electromagnetic linear-motion device in which a field magnet unit mounted on a movable unit slidably supported on elongated guide members is movable longitudinally between and along a pair of spaced parallel stationary linear armatures so that any objectionable forces producing increased frictional forces between the movable unit and the guide members are cancelled by each other.

摘要翻译： 一种电磁线性运动装置，其中安装在可滑动地支撑在细长导向件上的可移动单元上的场磁体单元可在一对间隔开的平行静止线性电枢之间沿纵向移动，使得任何令人不快的力在可动单元之间产生增加的摩擦力 并且引导构件被彼此取消。

公开(公告)号：US20120299182A1

公开(公告)日：2012-11-29

申请号：US13577199

申请日：2011-02-03

申请人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

发明人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC分类号： H01L23/49

CPC分类号： H01L24/48 ,  B23K35/0244 ,  B23K35/3046 ,  C22C9/00 ,  C22F1/08 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/01032 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/01049 ,  H01L2924/01203 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01204

摘要： It is an object of the present invention to provide a bonding structure and a copper bonding wire for semiconductor that are realizable at an inexpensive material cost, superior in a long-term reliability of a bonded portion bonded to an Al electrode, and suitable for use in a vehicle-mounted LSI. A ball-bonded portion is formed by bonding to the aluminum electrode a ball formed on a front end of the copper bonding wire. After being heated at any temperature between 130° C. and 200° C., the aforementioned ball-bonded portion exhibits a relative compound ratio R1 of 40-100%, the relative compound ratio R1 being a ratio of a thickness of a Cu—Al intermetallic compound to thicknesses of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of the ball-bonded portion.

摘要翻译： 本发明的目的是提供一种能够以廉价的材料成本实现的用于半导体的接合结构和铜接合线，并且在与Al电极接合的接合部分的长期可靠性方面优越，并且适合使用 在车载LSI中。 通过将形成在铜键合线的前端上的球接合到铝电极而形成球形接合部。 在130℃至200℃之间的任何温度下加热之后，上述球形接合部分的相对化合物比率为40-100％，相对化合物比例R1为Cu- Al金属间化合物与由Cu和Al组成并形成在球形接合部分的横截面上的金属间化合物的厚度。

公开(公告)号：US4580257A

公开(公告)日：1986-04-01

申请号：US458591

申请日：1983-01-17

申请人： Takashi Kikuchi ,  Shinya Takahashi ,  Masao Ono ,  Toshio Hirano ,  Atsuo Ikeda ,  Kunio Abe

发明人： Takashi Kikuchi ,  Shinya Takahashi ,  Masao Ono ,  Toshio Hirano ,  Atsuo Ikeda ,  Kunio Abe

IPC分类号： G11B3/095 ,  G11B3/38

CPC分类号： G11B3/0957

摘要： A dual drive system for an automatic record player of a type in which programmed music selection can be carried out. The drive system includes a mechanical first drive system for mechanically driving the pickup arm and an electromagnetic second drive system for driving the pickup arm using an electromagnetic force. Circuitry is provided for selecting between the two drive systems in accordance with the selected operational mode of the player or the position of the pickup arm.

摘要翻译： 一种用于可以进行编程音乐选择的类型的自动唱机的双驱动系统。 驱动系统包括用于机械驱动拾取臂的机械第一驱动系统和用于使用电磁力驱动拾取臂的电磁第二驱动系统。 电路被提供用于根据所选择的演奏者的操作模式或拾取臂的位置在两个驱动系统之间进行选择。

公开(公告)号：US09331049B2

公开(公告)日：2016-05-03

申请号：US12866797

申请日：2009-07-10

申请人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

发明人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC分类号： H01L23/48 ,  H01L23/00

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48486 ,  H01L2224/48499 ,  H01L2224/48507 ,  H01L2224/48511 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85986 ,  H01L2225/06562 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10T428/12222 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/20645 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/01049

摘要： The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump.

摘要翻译： 本发明的目的在于提供铜基接合线的接合结构，实现低材料成本，在反向接合中的连续接合中的高生产率，用于凸块上的楔形接合，以及在高温加热，热循环中具有优异的可靠性 测试，回流测试，HAST测试等。 接合结构用于将接合线连接到形成在半导体器件的电极上的球凸点，接合线和分别包含铜作为其主要成分的球凸块。 接合结构包括设置在球凸块的接合部分和接合线的界面处的浓缩层A，其中浓缩层A中的铜以外的金属R的浓度不小于铜的平均浓度的十倍 球碰撞中的金属R; 以及集中层B，设置在所述球凸块的接合部的界面和所述电极之间，所述浓缩层B中的所述金属R的浓度不小于所述球凸块中的金属R的平均浓度的十倍 。

公开(公告)号：US20130180757A1

公开(公告)日：2013-07-18

申请号：US13877224

申请日：2011-09-29

申请人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

发明人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC分类号： H01B1/02

CPC分类号： H01B1/026 ,  B23K20/007 ,  H01L23/48 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/05624 ,  H01L2224/32145 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/4851 ,  H01L2224/48511 ,  H01L2224/48599 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/73265 ,  H01L2224/76268 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/85045 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06565 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/3025 ,  Y02P70/605 ,  H01L2224/45678 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45144 ,  H01L2924/20752 ,  H01L2924/01204 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01083 ,  H01L2924/013 ,  H01L2924/00013

摘要： A bonding structure of a ball-bonded portion is obtained by bonding a ball portion formed on a front end of a multilayer copper bonding wire. The multilayer copper bonding wire includes a core member that is mainly composed of copper, and an outer layer that is formed on the core member and is mainly composed of at least one noble metal selected from a group of Pd, Au, Ag and Pt. Further, a first concentrated portion of such noble metal(s) is formed in a ball-root region located at a boundary with the copper bonding wire in a surface region of the ball-bonded portion.

摘要翻译： 通过将形成在多层铜接合线的前端上的球部接合而获得球接部分的接合结构。 多层铜键合线包括主要由铜构成的芯构件和形成在芯构件上的外层，主要由选自Pd，Au，Ag和Pt中的至少一种贵金属构成。 此外，在与球形接合部的表面区域中的铜接合线的边界处的球根区域中形成有这种贵金属的第一集中部分。