公开(公告)号：US20090284942A1

公开(公告)日：2009-11-19

申请号：US12428860

申请日：2009-04-23

申请人： Takashi YUI ,  Atsushi SAIKI

发明人： Takashi YUI ,  Atsushi SAIKI

IPC分类号： H05K7/00 ,  H05K3/30

CPC分类号： H05K3/0052 ,  H05K3/005 ,  H05K2201/09063 ,  H05K2201/0909 ,  H05K2203/167 ,  Y10T29/4913

摘要： A semiconductor device fabrication method includes: forming an elongated hole 5 in a wiring board plate along a perimeter line 3 of a plurality of wiring board regions defined over the wiring board plate with a connecting portion left unremoved at a corner of each of the wiring board regions; mounting semiconductor elements on the wiring board regions; and cutting the connecting portion using a punch 8 to isolate the wiring board regions from the wiring board plate into wiring boards. Each of the wiring boards has a cut edge formed by the punch, the cut edge starting from an end of the elongated hole 5 provided on a first side of the perimeter line 3 and extending across part of the connecting portion inside the perimeter line 3, the cut edge being angled inward of the wiring board so as to slope downward from the end of the elongated hole 5.

摘要翻译： 半导体器件制造方法包括：沿着布线板板上限定的多个布线板区域的周边线3在布线板板上形成细长孔5，其中连接部分在左边未被移除在每个布线板的拐角处 区域; 将半导体元件安装在布线板区域上; 并使用冲头8切割连接部分，以将布线板区域与布线板板隔离成线路板。 每个布线板具有由冲头形成的切割边缘，切割边缘从设置在周边线3的第一侧上的细长孔5的端部开始并延伸穿过周边线3内的连接部分的一部分， 切割边缘从布线板向内倾斜，从而从细长孔5的端部向下倾斜。

公开(公告)号：US06747339B1

公开(公告)日：2004-06-08

申请号：US08362293

申请日：1994-12-22

申请人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

发明人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

IPC分类号： H01L2358

CPC分类号： H01L21/02118 ,  H01L21/02129 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/312 ,  H01L23/057 ,  H01L23/10 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/556 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 &mgr;m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

摘要翻译： 半导体装置，其特征在于，在半导体基板的至少有源区域上设置由聚酰亚胺树脂或聚酰亚胺异吲哚并唑并二酮树脂构成的涂膜至少10μm厚的半导体装置， 包。 半导体器件明显地消除了麻烦，这些麻烦归因于包含在包装材料中的杂质所产生的α射线。

公开(公告)号：US4926238A

公开(公告)日：1990-05-15

申请号：US252701

申请日：1988-09-30

申请人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

发明人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

IPC分类号： H01L23/32 ,  H01L21/312 ,  H01L23/057 ,  H01L23/10 ,  H01L23/29 ,  H01L23/31 ,  H01L23/556

CPC分类号： H01L24/50 ,  H01L21/312 ,  H01L23/057 ,  H01L23/10 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/556 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/13144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16195

摘要： A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 .mu.m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

摘要翻译： 在半导体衬底的至少有源区上设置半导体装置，其中由聚酰亚胺树脂或聚酰亚胺异吲哚并唑并二酮树脂制成并且至少10μm厚的涂膜，并将所得半导体衬底封装在 陶瓷包装。 半导体器件明显地消除了麻烦，这些麻烦归因于包含在包装材料中的杂质所产生的α射线。

公开(公告)号：US4693173A

公开(公告)日：1987-09-15

申请号：US786550

申请日：1985-10-11

申请人： Atsushi Saiki ,  Michio Suzuki ,  Hideo Sunami ,  Shojiro Asai ,  Michiyoshi Maki ,  Kinichiro Asami

发明人： Atsushi Saiki ,  Michio Suzuki ,  Hideo Sunami ,  Shojiro Asai ,  Michiyoshi Maki ,  Kinichiro Asami

IPC分类号： F24F3/16 ,  F24F7/10 ,  F24F9/00

CPC分类号： F24F3/161 ,  F24F7/10

摘要： A clean room wherein clean air obtained through filters from the upper portion of the clean room is blown toward the floor, through the openings in the floor, and with the clean air being discharged again through the filters from the upper portion of the clean room. The air flow rate of clean air in the aisle areas is greater than the air flow rate in the wafer handling areas, and the opening rate of the floor is smaller in the portion near to an air return under the floor than in the portion remote from the air return thereby greatly reducing the diffusion of dust to the wafer handling areas.

摘要翻译： 清洁室，其中通过来自洁净室的上部的过滤器获得的清洁空气通过地板中的开口被吹向地板，并且清洁空气从洁净室的上部再次通过过滤器排出。 通道区域中清洁空气的空气流量大于晶片处理区域中的空气流速，并且地板下方的接近空气返回部分的开度比在远离 空气返回从而大大减少了粉尘向晶片处理区域的扩散。

公开(公告)号：US4225702A

公开(公告)日：1980-09-30

申请号：US8408

申请日：1979-02-01

申请人： Daisuke Makino ,  Yasuo Miyadera ,  Seiki Harada ,  Atsushi Saiki

发明人： Daisuke Makino ,  Yasuo Miyadera ,  Seiki Harada ,  Atsushi Saiki

IPC分类号： C08G69/00 ,  C08G69/32 ,  C08G73/00 ,  C08G73/10 ,  H01B3/30 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

CPC分类号： C08G73/1032 ,  H01B3/303

摘要： A method of preparing a polyamide acid type intermediate is provided, by using a purified inert solvent and monomer compounds, or diamine and/or diaminoamide compounds and a tetracarboxylic acid dianhydride, whose ionic impurities and free acid contents were reduced by recrystallization purification. The polyamide acid type intermediate may improve electrical properties and heat resistance of semiconductors when it is applied to, for instance, a surface-protecting film of semiconductors or an interlayer-insulating film of semiconductors having a multiple layer wiring structure.

摘要翻译： 通过使用纯化的惰性溶剂和单体化合物或二胺和/或二氨基酰胺化合物和四羧酸二酐，其离子杂质和游离酸含量通过重结晶纯化而还原，提供聚酰胺酸型中间体的制备方法。 当聚酰胺酸型中间体用于例如半导体的表面保护膜或具有多层布线结构的半导体的层间绝缘膜时，可提高半导体的电性能和耐热性。

公开(公告)号：US4017886A

公开(公告)日：1977-04-12

申请号：US578174

申请日：1975-05-16

申请人： Masami Tomono ,  Akira Abe ,  Seiki Harada ,  Kikuji Sato ,  Takeshi Takagi ,  Genichi Kamoshita ,  Yuichiro Oya ,  Atsushi Saiki

发明人： Masami Tomono ,  Akira Abe ,  Seiki Harada ,  Kikuji Sato ,  Takeshi Takagi ,  Genichi Kamoshita ,  Yuichiro Oya ,  Atsushi Saiki

IPC分类号： H01L21/00 ,  H01L21/312 ,  H01L21/60 ,  H01L21/607 ,  H01L23/29 ,  H01L23/485 ,  H01L23/532 ,  H01L23/30

CPC分类号： H01L24/85 ,  H01L21/00 ,  H01L21/312 ,  H01L23/29 ,  H01L23/485 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/0345 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0568 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48671 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/4878 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/30105

摘要： Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.

摘要翻译： 公开了一种分立半导体器件，其包括具有发射极区域，基极区域和集电极区域的Si体，设置在主体表面上的SiO 2层，设置在SiO 2层上的厚度为5μm的聚酰亚胺树脂，电极 穿透SiO 2层和聚酰亚胺树脂，从而分别与发射极区域和基极区域接触，并且在聚酰亚胺树脂的表面上延伸，从而容易将与外部电极连接的电线与电极接合。

公开(公告)号：US08022305B2

公开(公告)日：2011-09-20

申请号：US12428860

申请日：2009-04-23

申请人： Takashi Yui ,  Atsushi Saiki

发明人： Takashi Yui ,  Atsushi Saiki

IPC分类号： H05K1/00

CPC分类号： H05K3/0052 ,  H05K3/005 ,  H05K2201/09063 ,  H05K2201/0909 ,  H05K2203/167 ,  Y10T29/4913

摘要： A semiconductor device fabrication method includes: forming an elongated hole 5 in a wiring board plate along a perimeter line 3 of a plurality of wiring board regions defined over the wiring board plate with a connecting portion left unremoved at a corner of each of the wiring board regions; mounting semiconductor elements on the wiring board regions; and cutting the connecting portion using a punch 8 to isolate the wiring board regions from the wiring board plate into wiring boards. Each of the wiring boards has a cut edge formed by the punch, the cut edge starting from an end of the elongated hole 5 provided on a first side of the perimeter line 3 and extending across part of the connecting portion inside the perimeter line 3, the cut edge being angled inward of the wiring board so as to slope downward from the end of the elongated hole 5.

摘要翻译： 半导体器件制造方法包括：沿着布线板板上限定的多个布线板区域的周边线3在布线板板上形成细长孔5，其中连接部分在左边未被移除在每个布线板的拐角处 区域; 将半导体元件安装在布线板区域上; 并使用冲头8切割连接部分，以将布线板区域与布线板板隔离成线路板。 每个布线板具有由冲头形成的切割边缘，切割边缘从设置在周边线3的第一侧上的细长孔5的端部开始并延伸穿过周边线3内的连接部分的一部分， 切割边缘从布线板向内倾斜，从而从细长孔5的端部向下倾斜。

公开(公告)号：US4436583A

公开(公告)日：1984-03-13

申请号：US445576

申请日：1982-11-30

申请人： Atsushi Saiki ,  Takao Iwayanagi ,  Saburo Nonogaki ,  Takashi Nishida ,  Seiki Harada

发明人： Atsushi Saiki ,  Takao Iwayanagi ,  Saburo Nonogaki ,  Takashi Nishida ,  Seiki Harada

IPC分类号： H01L21/30 ,  C08J7/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/312 ,  H01L23/48 ,  H05K1/03 ,  H05K3/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  B29C17/08

CPC分类号： H01L21/31133 ,  H01L21/312 ,  H05K1/0346 ,  H05K3/0017

摘要： Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.

摘要翻译： 本发明公开了一种聚酰亚胺树脂薄膜的选择性蚀刻方法，该方法使用由通过将不饱和酮聚合物如聚甲基异丙烯基酮作为基础树脂添加光敏剂而制备的负型光致抗蚀剂构成的蚀刻掩模和由20〜 40％体积的水合肼和余量的多胺。 本发明的蚀刻方法可以通过湿蚀刻提供具有高尺寸精度的聚酰亚胺型树脂膜的图案。

公开(公告)号：US4001870A

公开(公告)日：1977-01-04

申请号：US420677

申请日：1973-11-30

申请人： Atsushi Saiki ,  Kikuji Sato ,  Seiki Harada ,  Terue Tsunoda ,  Yoichi Oba

发明人： Atsushi Saiki ,  Kikuji Sato ,  Seiki Harada ,  Terue Tsunoda ,  Yoichi Oba

IPC分类号： H01B3/30 ,  H01L21/312 ,  H01L23/532 ,  H01L23/30

CPC分类号： H01L23/5329 ,  H01B3/306 ,  H01L21/312 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044

摘要： An insulating film provided on the surface of a semiconductor device having a protective film of silicon dioxide is composed of a double layer. The double layer consists of a thin film which is disposed on at least a part of the protective film of silicon dioxide and which is made of an organic compound containing either an amino group as well as an alkoxysilane group or an epoxy group as well as an alkoxysilane group, and a film which is disposed so as to cover the thin film of an organic compound and which is made of a heat-resisting polymer resin.The heat-resisting polymer is the reaction product of 4,4'-diamino-diphenylether, 4,4'-diamino-diphenyl ether-3-carbonyl amide, and pyromellitic acid dianhydride.

公开(公告)号：US4539616A

公开(公告)日：1985-09-03

申请号：US400019

申请日：1982-07-20

申请人： Isamu Yuito ,  Kazuo Shiiki ,  Atsushi Saiki ,  Yoshio Homma ,  Noriyuki Kumasaka ,  Yoshihiro Shiroishi ,  Mitsuhiro Kudo

发明人： Isamu Yuito ,  Kazuo Shiiki ,  Atsushi Saiki ,  Yoshio Homma ,  Noriyuki Kumasaka ,  Yoshihiro Shiroishi ,  Mitsuhiro Kudo

IPC分类号： G11B5/17 ,  G11B5/31 ,  G11B5/22 ,  G11B5/20

CPC分类号： G11B5/313 ,  G11B5/17 ,  Y10T29/49064

摘要： Herein disclosed is a thin film magnetic head which is so constructed that a conductor layer arranged in a non-magnetic insulating layer isolating two magnetic poles and adapted to form a coil of plural turns has a height made larger than the width and gap thereof. A method of fabricating that head includes the step of forming a non-magnetic insulating layer, the step of etching the insulating layer by using a mask layer formed thereover as a mask, the step of depositing a metal for providing a conductor layer, the step of removing the mask layer together with the metal thereover, and the step forming a coating of a non-magnetic insulating layer thereover, thereby to form the conductor layer. The head thus fabricated has its magnetic recording and reproducing characteristics improved.

摘要翻译： 这里公开了一种薄膜磁头，其结构使得布置在隔离两个磁极并适于形成多个匝的线圈的非磁性绝缘层中的导体层具有比其宽度和间隙大的高度。 制造该头的方法包括形成非磁性绝缘层的步骤，通过使用其上形成的掩模层作为掩模蚀刻绝缘层的步骤，沉积用于提供导体层的金属的步骤，步骤 与金属一起除去掩模层，以及在其上形成非磁性绝缘层的涂层的步骤，从而形成导体层。 如此制造的磁头具有改善的磁记录和再现特性。