公开(公告)号：US07108745B2

公开(公告)日：2006-09-19

申请号：US10414107

申请日：2003-04-16

申请人： Yoshiaki Hasegawa ,  Ayumu Tsujimura ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Yoshiaki Hasegawa ,  Ayumu Tsujimura ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： H01L21/3245

摘要： After a Group III-V compound semiconductor layer, to which a p-type dopant has been introduced, has been formed over a substrate, the compound semiconductor layer is annealed. In the stage of heating the compound semiconductor layer, atoms, deactivating the p-type dopant, are eliminated from the compound semiconductor layer by creating a temperature gradient in the compound semiconductor layer.

公开(公告)号：US06921678B2

公开(公告)日：2005-07-26

申请号：US10434063

申请日：2003-05-09

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/223

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US06911351B2

公开(公告)日：2005-06-28

申请号：US10345377

申请日：2003-01-16

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/40 ,  H01L33/46 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01L21/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 本发明的氮化物半导体的制造方法包括以下步骤：在衬底上形成AlGaN的第一氮化物半导体层， / SUB，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在所述第一氮化物半导体层上生长Al 2 O 3的第二氮化物半导体层，其中0 <= x ，y，z <= 1和x + y + z = 1，通过使用对应于从掩模膜暴露的凸起的顶面的C面作为晶种。

公开(公告)号：US06858877B2

公开(公告)日：2005-02-22

申请号：US10352256

申请日：2003-01-28

申请人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

发明人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/34333

摘要： A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.

摘要翻译： 在由氮化镓（GaN）制成的基板上形成由至少含有铝的氮化物半导体构成的面形成层。 在小面形成层的表面上形成有相对于C面倾斜的面面，并且从倾斜面面侧向生长选择性生长层。 结果，选择生长层可以使由n型AlGaN制成的n型包覆层基本上晶格匹配并在选择性生长层上生长。 例如，可以通过晶体生长获得没有产生裂纹的激光结构。

公开(公告)号：US06764871B2

公开(公告)日：2004-07-20

申请号：US10465647

申请日：2003-06-20

申请人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura

发明人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura

IPC分类号： H01L2100

CPC分类号： H01L31/0304 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/007 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for fabricating a nitride semiconductor device comprising steps of forming a low-temperature deposited layer composed of a Group III-Group V nitride semiconductor containing at least Al onto a surface of substrate (101) at a first temperature; subjecting the low-temperature deposited layer to heat treatment at a second temperature, which is higher than the first temperature, and converting the low-temperature deposited layer into a faceted layer (102); initially growing a GaN based semiconductor layer (103) onto a surface of the faceted layer at a third temperature; and fully growing the GaN based semiconductor layer at a fourth temperature that is lower than the third temperature. By employing the method for fabricating a nitride semiconductor device according to the present invention, it is possible to provide a nitride semiconductor device with high quality and high reliability.

摘要翻译： 一种用于制造氮化物半导体器件的方法，包括以下步骤：在第一温度下将至少包含至少Al的III-V族氮化物半导体组成的低温沉积层形成在衬底（101）的表面上; 使所述低温沉积层在比所述第一温度高的第二温度下进行热处理，并将所述低温沉积层转化为刻面层（102）; 最初在第三温度下将GaN基半导体层（103）生长到所述刻面层的表面上; 以及在低于第三温度的第四温度下完全生长GaN基半导体层。 通过采用本发明的氮化物半导体器件的制造方法，可以提供高品质，高可靠性的氮化物半导体器件。

公开(公告)号：US06392979B1

公开(公告)日：2002-05-21

申请号：US09009436

申请日：1998-01-20

申请人： Kazuhisa Yamamoto ,  Yasuo Kitaoka ,  Ayumu Tsujimura ,  Masahiro Kume

发明人： Kazuhisa Yamamoto ,  Yasuo Kitaoka ,  Ayumu Tsujimura ,  Masahiro Kume

IPC分类号： G11B700

CPC分类号： B82Y20/00 ,  G11B7/126 ,  G11B7/127 ,  G11B7/1381 ,  G11B7/24085 ,  H01S5/0211 ,  H01S5/0213 ,  H01S5/028 ,  H01S5/1064 ,  H01S5/125 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/347

摘要： Laser light emitted from the wavelength-locked GaN semiconductor laser is collimated through a collimation lens, led through a polarization beam splitter and a ¼ wavelength plate, and converged by a focus lens so as to be radiated on pits formed in an optical disk medium. The signal light from the optical disk medium is collimated by the focus lens, and has its polarization direction turned by the ¼ wavelength plate by 90° relative to its polarization direction before being returned from the optical disk medium. As a result, the signal light is reflected from the polarization beam splitter so as to be converged on the optical detector by the focus lens.

摘要翻译： 从波长锁定的GaN半导体激光器发射的激光通过准直透镜准直，通过偏振分束器和1/4波长板，并被聚焦透镜会聚，以便辐射到形成在光盘介质中的凹坑上。 来自光盘介质的信号光被聚焦透镜准直，并且在从光盘介质返回之前，其偏振方向相对于其偏振方向由1/4波片转动90度。 结果，信号光从偏振分束器反射，以便被聚焦透镜会聚在光学检测器上。

公开(公告)号：US6072762A

公开(公告)日：2000-06-06

申请号：US289984

申请日：1999-04-13

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

IPC分类号： G11B7/005 ,  G11B7/125 ,  G11B7/135 ,  G11B11/105

CPC分类号： G11B7/126 ,  G11B11/10515 ,  G11B11/10543 ,  G11B7/005 ,  G11B7/128 ,  G11B7/1369 ,  G11B7/135

摘要： Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.

摘要翻译： 在半导体激光二极管和光盘之间，用于准直半导体激光二极管输出的激光束的准直透镜，用于衰减通过准直透镜的准直光束的液晶光学快门，以及用于分离反射光的分束器 从光盘配置。 此外，还设置有用于收集由准直透镜获得的准直光束在光盘的数据保持表面上的集体透镜。

公开(公告)号：US06777253B2

公开(公告)日：2004-08-17

申请号：US10017389

申请日：2001-12-18

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yasutoshi Kawaguchi ,  Nobuyuki Otsuka ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yasutoshi Kawaguchi ,  Nobuyuki Otsuka ,  Kiyoshi Ohnaka

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/021 ,  H01S5/0211 ,  H01S5/34333

摘要： The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of AlxGa1−xN (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of AluGavInwN (0

摘要翻译： 制造半导体的方法包括以下步骤：（1）在高于室温的温度下，在衬底上生长由Al x Ga 1-x N（0 <= x <= 1）制成的第一半导体层; 和（2）在第一半导体层上生长由AluGavInwN（0