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公开(公告)号：US20050077266A1
公开(公告)日：2005-04-14
申请号：US10686342
申请日：2003-10-14
申请人： Randal Chance , J. Rolfson , Azeddine Zerrade
发明人： Randal Chance , J. Rolfson , Azeddine Zerrade
摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.
摘要翻译： 本发明包括从适合于利用后代（较短波长）步进辐射的配置转换掩模版到适于利用早期生成（更长波长）步进辐射的配置的方法。 本发明可用于将掩模版从适于193纳米波长辐射的配置转换成适合于248纳米波长辐射的配置。 在这种方面，可以用基本上由钼和硅组成的图案层来保护衬底的含石英材料，同时对含石英的材料进行干蚀刻。 可以构造适合于248纳米波长辐射的配置，使得248纳米波长辐射的相位相对于通过图案化层和含石英的材料的组合厚度相对于相对于通过的248纳米波长辐射而偏移大约180度 仅通过含石英材料。
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公开(公告)号：US07767365B2
公开(公告)日：2010-08-03
申请号：US11515089
申请日：2006-08-31
申请人： Craig M. Carpenter , James Baugh , Steve McDonald , Robert Rasmussen , J. Brett Rolfson , Azeddine Zerrade
发明人： Craig M. Carpenter , James Baugh , Steve McDonald , Robert Rasmussen , J. Brett Rolfson , Azeddine Zerrade
IPC分类号： G03F1/00
摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.
摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。
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3.发明授权Methods for converting reticle configurations and methods for modifying reticles 失效用于转换掩模版配置的方法和修改掩模版的方法公开(公告)号：US07592105B2
公开(公告)日：2009-09-22
申请号：US11486523
申请日：2006-07-13
摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.
摘要翻译： 本发明包括从适合于利用后代（较短波长）步进辐射的配置转换掩模版到适于利用早期生成（更长波长）步进辐射的配置的方法。 本发明可用于将掩模版从适于193纳米波长辐射的配置转换成适合于248纳米波长辐射的配置。 在这种方面，可以用基本上由钼和硅组成的图案层来保护衬底的含石英材料，同时对含石英的材料进行干蚀刻。 可以构造适合于248纳米波长辐射的配置，使得248纳米波长辐射的相位相对于通过图案化层和含石英的材料的组合厚度相对于相对于通过的248纳米波长辐射而偏移大约180度 仅通过含石英材料。
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公开(公告)号：US20080057411A1
公开(公告)日：2008-03-06
申请号：US11515089
申请日：2006-08-31
申请人： Craig M. Carpenter , James Baugh , Steve McDonald , Robert Rasmussen , J. Brett Rolfson , Azeddine Zerrade
发明人： Craig M. Carpenter , James Baugh , Steve McDonald , Robert Rasmussen , J. Brett Rolfson , Azeddine Zerrade
摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.
摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。
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公开(公告)号：US07147974B2
公开(公告)日：2006-12-12
申请号：US10686342
申请日：2003-10-14
IPC分类号： G01F9/00
摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.
摘要翻译： 本发明包括从适合于利用后代（较短波长）步进辐射的配置转换掩模版到适于利用早期生成（更长波长）步进辐射的配置的方法。 本发明可用于将掩模版从适于193纳米波长辐射的配置转换成适合于248纳米波长辐射的配置。 在这种方面，可以用基本上由钼和硅组成的图案层来保护衬底的含石英材料，同时对含石英的材料进行干蚀刻。 可以构造适合于248纳米波长辐射的配置，使得248纳米波长辐射的相位相对于通过图案化层和含石英的材料的组合厚度相对于相对于通过的248纳米波长辐射而偏移大约180度 仅通过含石英材料。
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公开(公告)号：US20060257757A1
公开(公告)日：2006-11-16
申请号：US11486523
申请日：2006-07-13
申请人： Randall Chance , J. Rolfson , Azeddine Zerrade
发明人： Randall Chance , J. Rolfson , Azeddine Zerrade
摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.
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