METHOD FOR DEPOSITION
    3.
    发明申请
    METHOD FOR DEPOSITION 审中-公开
    沉积方法

    公开(公告)号:US20130108789A1

    公开(公告)日:2013-05-02

    申请号:US13285501

    申请日:2011-10-31

    CPC classification number: H01L31/1828 C23C14/0021 C23C14/024 C23C14/0629

    Abstract: Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.

    Abstract translation: 本发明的实施例包括一种方法。 该方法包括从固体源材料制备第一蒸气,使碲化碲反应形成包含碲的第二蒸气,以及在沉积环境中在载体上沉积包含碲的涂层材料,沉积环境包括第一蒸气和第二蒸气 。 另一个实施例是系统。 该系统包括沉积室,其设置成容纳与载体流体连通的沉积环境; 设置成与沉积室流体连通的固体源材料; 和与沉积室流体连通的流体连通的碲化氢源。

    PHOTOVOLTAIC DEVICE WITH MANGENESE AND TELLURIUM INTERLAYER
    4.
    发明申请
    PHOTOVOLTAIC DEVICE WITH MANGENESE AND TELLURIUM INTERLAYER 审中-公开
    具有MANGENESE和TELLURIUM INTERLAYER的光伏器件

    公开(公告)号:US20130104985A1

    公开(公告)日:2013-05-02

    申请号:US13286794

    申请日:2011-11-01

    Abstract: A photovoltaic device includes an absorber layer comprising a material comprising cadmium and tellurium. The photovoltaic device further includes a p+-type semiconductor layer and an interlayer interposed between the absorber layer and the p+-type semiconductor layer. The interlayer comprises manganese. The photovoltaic device may be manufactured as a substrate-based device or as a superstrate base device.

    Abstract translation: 光伏器件包括包含镉和碲的材料的吸收层。 光电器件还包括p +型半导体层和夹在吸收层和p +型半导体层之间的层间。 中间层包含锰。 光电器件可以被制造为基于衬底的器件或者作为覆盖基底器件。

    METHODS OF MAKING PHOTOVOLTAIC DEVICES AND PHOTOVOLTAIC DEVICES
    5.
    发明申请
    METHODS OF MAKING PHOTOVOLTAIC DEVICES AND PHOTOVOLTAIC DEVICES 有权
    制造光伏器件和光电器件的方法

    公开(公告)号:US20120325298A1

    公开(公告)日:2012-12-27

    申请号:US13165298

    申请日:2011-06-21

    Abstract: One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.

    Abstract translation: 本发明的一个方面包括制造光伏器件的方法。 该方法包括在窗口层上设置吸收层,其中吸收层包括第一区域和第二区域。 该方法包括将第一区域与窗口层相邻置于包含第一分压的氧的第一环境中; 以及在包括第二分压的氧的第二环境中将所述第二区域设置在所述第一区域上,其中所述第一分压大于所述第二分压。 本发明的一个方面包括光伏器件。

    PHOTOVOLTAIC DEVICES AND METHOD OF MAKING
    6.
    发明申请
    PHOTOVOLTAIC DEVICES AND METHOD OF MAKING 有权
    光伏器件及其制造方法

    公开(公告)号:US20120305064A1

    公开(公告)日:2012-12-06

    申请号:US13150485

    申请日:2011-06-01

    Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.

    Abstract translation: 在本发明的一个方面,提供一种光电器件。 光伏器件包括窗口层和设置在窗口层上的吸收层,其中吸收层包括第一区域和第二区域,第一区域邻近窗口层设置。 吸收层还包括第一添加剂和第二添加剂,其中第一区域中的第一添加剂的浓度大于第二区域中第一添加剂的浓度,并且其中第二添加剂在第二区域中的浓度 大于第一区域中的第二添加剂的浓度。 还提供了制造光伏器件的方法。

    PHOTOVOLTAIC DEVICES AND METHOD OF MAKING
    7.
    发明申请
    PHOTOVOLTAIC DEVICES AND METHOD OF MAKING 有权
    光伏器件及其制造方法

    公开(公告)号:US20120260978A1

    公开(公告)日:2012-10-18

    申请号:US13088496

    申请日:2011-04-18

    Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.

    Abstract translation: 在本发明的一个方面,提供一种光电器件。 光伏器件包括透明层; 设置在所述透明层上的第一多孔层,其中所述第一多孔层包括延伸穿过所述第一多孔层的厚度的多个孔; 设置在所述多个孔中以形成图案化的第一半导体层的第一半导体材料; 以及设置在所述第一多孔层和所述图案化的第一半导体层上的第二半导体层,其中所述图案化的第一半导体层基本上是透明的。 还提供了制造光伏器件的方法。

    Multilayered film-nanowire composite, bifacial, and tandem solar cells
    9.
    发明授权
    Multilayered film-nanowire composite, bifacial, and tandem solar cells 失效
    多层膜 - 纳米线复合材料,双面和串联太阳能电池

    公开(公告)号:US07977568B2

    公开(公告)日:2011-07-12

    申请号:US11622275

    申请日:2007-01-11

    Abstract: A photovoltaic device includes a substrate having at least two surfaces and a multilayered film disposed on at least a portion of at least one surface of the substrate. Elongated nanostructures are disposed on the multilayered film. The device incorporates a top layer of the multilayered film contacting the elongated nanostructures that is a tunnel junction. The device has at least one layer deposited over the elongated nanostructures defining a portion of a photoactive junction. A solar panel includes at least one photovoltaic device. The solar panel isolates each such devices from its surrounding atmospheric environment and permits the generation of electrical power.

    Abstract translation: 光伏器件包括具有至少两个表面的衬底和设置在衬底的至少一个表面的至少一部分上的多层膜。 细长的纳米结构设置在多层膜上。 该装置包含与作为隧道结的细长纳米结构接触的多层膜的顶层。 该装置具有沉积在限定光活性连接部分的细长纳米结构上的至少一层。 太阳能电池板包括至少一个光伏器件。 太阳能板将每个这样的装置与其周围的大气环境隔离并允许产生电力。

    Method and Apparatus For A Semiconductor Structure Forming At Least One Via
    10.
    发明申请
    Method and Apparatus For A Semiconductor Structure Forming At Least One Via 审中-公开
    一种形成半导体结构的方法和装置

    公开(公告)号:US20080174028A1

    公开(公告)日:2008-07-24

    申请号:US11626036

    申请日:2007-01-23

    CPC classification number: H01L31/022425 H01L31/022433 Y02E10/50

    Abstract: One exemplary embodiment of a semiconductor structure can include: (a) a semiconductor substrate of one conductivity type, having a front surface and a back surface and including at least one via through the semiconductor substrate, where the at least one via is filled with a conductive material; and (b) a semiconductor layer disposed on at least a portion of the front or back surface of the semiconductor substrate, where the semiconductor layer is compositionally graded through its depth with one or more selected dopants, and the conductive material is configured to electrically couple the semiconductor layer to at least one front contact disposed on or over the surface of the substrate.

    Abstract translation: 半导体结构的一个示例性实施例可以包括:(a)一种导电类型的半导体衬底,具有前表面和后表面,并且包括穿过半导体衬底的至少一个通孔,其中至少一个通孔填充有 导电材料; 和(b)设置在半导体衬底的前表面或后表面的至少一部分上的半导体层,其中半导体层通过其一个或多个所选掺杂剂在其深度上被成分地分级,并且导电材料被配置为电耦合 所述半导体层至少设置在所述基板的表面上或上方的前端触点。

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