HIGH PRODUCTIVITY COMBINATORIAL WORKFLOW FOR PHOTORESIST STRIP APPLICATIONS
    3.
    发明申请
    HIGH PRODUCTIVITY COMBINATORIAL WORKFLOW FOR PHOTORESIST STRIP APPLICATIONS 失效
    高效生产力组合工作流程用于光栅条纹应用

    公开(公告)号:US20130130414A1

    公开(公告)日:2013-05-23

    申请号:US13298524

    申请日:2011-11-17

    IPC分类号: H01L21/66

    CPC分类号: H01L22/14 G03F7/422 H01L22/20

    摘要: Electrical testing of metal oxide semiconductor (MOS) high-k capacitor structures is used to evaluate photoresist strip or cleaning chemicals using a combinatorial workflow. The electrical testing can be able to identify the damages on the high-k dielectrics, permitting a selection of photoresist strip chemicals to optimize the process conditions in the fabrication of semiconductor devices. The high productivity combinatorial technique can provide a compatibility evaluation of photoresist strip chemicals with high-k devices.

    摘要翻译: 金属氧化物半导体(MOS)高k电容器结构的电气测试用于使用组合工作流程来评估光致抗蚀剂条或清洁化学品。 电气测试能够识别高k电介质上的损伤,允许选择光致抗蚀剂胶带化学品来优化半导体器件制造过程中的工艺条件。 高生产率组合技术可以提供具有高k器件的光致抗蚀剂剥离化学品的兼容性评估。

    Nanocrystal memories and methods of forming the same
    9.
    发明授权
    Nanocrystal memories and methods of forming the same 有权
    纳米晶体记忆及其形成方法

    公开(公告)号:US08481386B2

    公开(公告)日:2013-07-09

    申请号:US12757812

    申请日:2010-04-09

    IPC分类号: H01L21/336

    摘要: In one embodiment, a memory device includes a substrate, a tunneling oxide, a silicide nanocrystal floating gate, and a control oxide. The tunneling oxide is positioned upon a first surface of the substrate, the silicide nanocrystal floating gate is positioned upon the tunneling oxide, and the control oxide positioned upon the nanocrystal floating gate.

    摘要翻译: 在一个实施例中,存储器件包括衬底,隧道氧化物,硅化物纳米晶体浮动栅极和控制氧化物。 隧道氧化物位于衬底的第一表面上,硅化物纳米晶体浮栅位于隧道氧化物上,并且控制氧化物位于纳米晶体浮栅上。