摘要:
The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.
摘要:
Method for forming three-dimensional device structures comprising a second device having sub-groundrule features formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device. the sub-groundrule feature is formed using mandrel and spacers.
摘要:
A method for allowing the removal of a TEOS etch mask layer utilizing an anisotropic technique such as reactive ion etching. The use of the anisotropic technique results in substantially less undercutting of the pad oxide layer than wet chemical etching techniques. One embodiment of the invention involves forming a polysilicon etch stop layer under the pad TEOS layer.
摘要:
The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.
摘要:
Method for forming three-dimensional device structures comprising a second device formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device.
摘要:
New types of apertures to vary the size and shape of the aperture area without the need to change the whole aperture plate in off axis lithography. The off axis illumination apertures allow the size and shape of apertures to be changed without having to change the aperture plates for each step in the lithographic process. The aperture plate is fitted with simple shutter mechanisms that allow the ready adjustment of the aperture openings.
摘要:
A system and method of avoiding pattern shortening without resorting to generating a mask with a bias solve the direction dependent differences in exposure behavior in photolithography processes in the manufacture of semiconductor devices. Instead of designing a biased mask to solve the exposure problem, the pattern shortening effect is avoided by influencing the exposure process itself. By using an off axis illumination technique, the exposure is separated into different directions. In one embodiment, off axis illumination is applied in combination with special dipole apertures (i.e., two openings). The exposure is done in two or more parts, whereby the aperture is twisted between exposures. In another embodiment, off axis illumination is used in combination with special polarizer apertures. As with the first embodiment, the exposure is done in two or more parts, but in this case with differently polarized light.
摘要:
A method of forming a self-aligned overlapping bitline contact, includes steps of first depositing a sacrificial polysilicon on a spacer dielectric film, and thereafter patterning the polysilicon. The polysilicon film is a sacrificial fill-in for a bitline contact stud. The method further includes depositing a middle-of-line (MOL) oxide on the polysilicon, and planarizing the MOL oxide by chemical-mechanical polishing (CMP). Thereafter, the polysilicon is etched and the spacer dielectric film is etched to form a self-aligned bitline contact.
摘要:
In a method of etch profile shaping through wafer temperature control during an etch process wherein deposition of a passivation film is temperature dependent, a gap between a semiconductor wafer to be etched and a cathode is pressurized at a first pressure, and the pressure in the gap is changed to a second pressure at a predetermined time during the etch process, thereby altering heat transfer from the semiconductor wafer to the cathode. The temperature of the wafer is adjusted one or more times during an etching process to control profile shaping of deep trenches, contact holes and shapes for mask opening shaping during the etch process.