公开(公告)号：US07685667B2

公开(公告)日：2010-03-30

申请号：US11152560

申请日：2005-06-14

申请人： Bih-tiao Lin ,  Jin Lung Linh

发明人： Bih-tiao Lin ,  Jin Lung Linh

IPC分类号： B08B11/00 ,  B08B11/02

CPC分类号： B08B1/04 ,  G01P3/486 ,  H01L21/67046

摘要： A method and system for cleaning the wafer after CMP is disclosed. A brush module having at least two brushes placed adjacent to each other and having the wafer placed in between. A dummy roller is in contact with an edge of the wafer and follows a rotation of the wafer, wherein when the wafer is rotated, the brushes clean both sides of the wafer, and the dummy roller detects a rotation speed and a rotation direction of the wafer for adjusting the rotation of the wafer.

摘要翻译： 公开了一种用于在CMP之后清洁晶片的方法和系统。 具有至少两个刷子的刷子模块，其彼此相邻放置并且将晶片放置在其间。 虚拟辊与晶片的边缘接触并跟随晶片的旋转，其中当晶片旋转时，刷子清洁晶片的两侧，并且虚拟辊检测到转动速度和旋转方向 用于调整晶片旋转的晶片。

公开(公告)号：US06821895B2

公开(公告)日：2004-11-23

申请号：US10371456

申请日：2003-02-20

申请人： Bih-Tiao Lin ,  Soon-Kang Huang

发明人： Bih-Tiao Lin ,  Soon-Kang Huang

IPC分类号： H01L21302

CPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/31053

摘要： A dynamically adjustable slurry feed arm and method for adjusting the same in a CMP process including carrying out the CMP process for a predetermined period of time on a substrate comprising a polishing layer to remove a portion of a polishing layer; determining the thickness of the polishing layer at a plurality of predetermined measurement areas comprising at least a polishing layer peripheral portion and a polishing layer center portion; determining a desired subsequent dispensing position to equalize the thickness of the polishing layer; and, adjusting the slurry feed arm to the subsequent dispensing position such that the slurry is dispensed over the polishing pad at the subsequent dispensing position comprising one of closer to the polishing pad center portion and closer to the polishing pad peripheral portion.

摘要翻译： 一种动态可调的浆料供给臂及其在CMP工艺中的调整方法，包括在包含抛光层的基板上进行预定时间的CMP工艺以去除抛光层的一部分; 确定在包括至少抛光层周边部分和抛光层中心部分的多个预定测量区域处的抛光层的厚度; 确定期望的后续分配位置以均衡抛光层的厚度; 并且将浆料进料臂调整到随后的分配位置，使得浆料在随后的分配位置被分配在抛光垫上，包括更靠近抛光垫中心部分并且更靠近抛光垫周边部分的抛光垫。

公开(公告)号：US20060277702A1

公开(公告)日：2006-12-14

申请号：US11152560

申请日：2005-06-14

申请人： Bih-tiao Lin ,  Jin Linh

发明人： Bih-tiao Lin ,  Jin Linh

IPC分类号： B08B1/04

CPC分类号： B08B1/04 ,  G01P3/486 ,  H01L21/67046

摘要： A method and system for cleaning the wafer after CMP is disclosed. A brush module having at least two brushes placed adjacent to each other and having the wafer placed in between. A dummy roller is in contact with an edge of the wafer and follows a rotation of the wafer, wherein when the wafer is rotated, the brushes clean both sides of the wafer, and the dummy roller detects a rotation speed and a rotation direction of the wafer for adjusting the rotation of the wafer.

摘要翻译： 公开了一种用于在CMP之后清洁晶片的方法和系统。 具有至少两个刷子的刷子模块，其彼此相邻放置并且将晶片放置在其间。 虚拟辊与晶片的边缘接触并跟随晶片的旋转，其中当晶片旋转时，刷子清洁晶片的两侧，并且虚拟辊检测到转动速度和旋转方向 用于调整晶片旋转的晶片。

公开(公告)号：US06524950B1

公开(公告)日：2003-02-25

申请号：US09535494

申请日：2000-03-24

申请人： Bih-Tiao Lin

发明人： Bih-Tiao Lin

IPC分类号： H01L214763

CPC分类号： H01L21/76877

摘要： A method of fabricating copper damascene. In this invention, only crystalline copper metal layer is formed inside the damascene trench and only amorphous copper metal layer is formed outside the damascene trench. During stacking the copper metal layer, copper metal stacks up to form crystalline copper metal with good lattice packing according to the position of the copper seed layer. Conversely, amorphous copper metal is formed in positions where no copper seed layer exists. Since the amorphous copper metal is softer than the crystalline copper metal, lower pressure and the ordinary slurry are used in chemical mechanical polishing to remove amorphous copper metal layer outside the damascene trench, in order to form a flat-surfaced copper damascene structure.

摘要翻译： 一种制造铜大马士革的方法。 在本发明中，只有结晶铜金属层形成在镶嵌沟槽内部，并且仅在非镶嵌沟槽外部形成无定形铜金属层。 在堆叠铜金属层期间，根据铜种子层的位置，铜金属堆叠形成具有良好晶格填充的结晶铜金属。 相反，在不存在铜种子层的位置形成无定形铜金属。 由于无定形铜金属比结晶铜金属更软，所以在化学机械抛光中使用较低压力和普通浆料以去除镶嵌槽外部的非晶铜金属层，以便形成平坦的铜镶嵌结构。

公开(公告)号：US06454917B1

公开(公告)日：2002-09-24

申请号：US09699843

申请日：2000-10-30

申请人： Bih-Tiao Lin

发明人： Bih-Tiao Lin

IPC分类号： C25B900

CPC分类号： C25D17/001 ,  C25D5/20 ,  C25D17/08

摘要： An electroplating tool, which includes at least of a deposition cassette which is installed on a negative electrode and copper piece in an electroplating tank, or a copper rod is installed on the positive electrode of the electroplating room. 25 wafers are installed in the electroplating room, and both ends of each of the wafers are respectively fixed in place by a wafer clamp. The wafer clamp is in contact with the negative electrode, and is electrically connected to the wafer. The copper rod or copper piece that connects to the positive electrode can be a big piece that is installed on the outer side of the deposition cassette opening. It can also assume a comb-like arrangement of 25 pieces, respectively interlocked and extending into the gaps between the wafers. Moreover, in order to increase the even distribution during copper deposition, the present invention further adds a sound wave vibration apparatus at the bottom of and on the two sides of the electroplating tank. An ultrasonic vibration is simultaneously provided on the electroplating, causing the copper layer on the wafers in the deposition cassette to be well distributed.

摘要翻译： 至少包括安装在负极上的沉积盒和电镀槽中的铜片或铜棒的电镀工具安装在电镀室的正电极上。 25个晶片安装在电镀室中，并且每个晶片的两端分别通过晶片夹固定就位。 晶片夹具与负极接触，并与晶片电连接。 连接到正极的铜棒或铜片可以是安装在沉积盒开口外侧的大块。 它还可以呈现分别互锁并延伸到晶片之间的间隙中的25个梳状布置。 此外，为了提高铜沉积时的均匀分布，本发明还在电镀槽的底部和两侧添加声波振动装置。 在电镀上同时提供超声波振动，使沉积盒中晶片上的铜层分布良好。

公开(公告)号：US5888124A

公开(公告)日：1999-03-30

申请号：US938234

申请日：1997-09-26

申请人： Bih-Tiao Lin ,  Fu-Liang Yang

发明人： Bih-Tiao Lin ,  Fu-Liang Yang

IPC分类号： B08B1/00 ,  B08B3/12 ,  B24B37/04 ,  H01L21/00 ,  B24B7/04 ,  B24B7/22

CPC分类号： H01L21/67051 ,  B08B1/00 ,  B08B3/12 ,  B24B37/04 ,  H01L21/67046

摘要： An apparatus for polishing and cleaning a semiconductor wafer (3028) is disclosed to substantially improve the efficiency of chemical-mechanical polishing. The apparatus reduces contamination to a clean room during fabrication of VLSI circuits. The apparatus includes a table (3026) supporting the wafer, and a polishing pad (3024) disposed on a surface of the wafer. The polishing pad performs chemical-mechanical polishing on the surface of the wafer. Further, at least one cleaning head (3042, 3044, 3046) is provided for cleaning the surface of the wafer. The wafer and the cleaning head are housed in a chamber (30). A guiding means (32) is used for guiding the cleaning head over the wafer to clean the surface of the wafer.

摘要翻译： 公开了用于抛光和清洁半导体晶片（3028）的设备，以显着提高化学机械抛光的效率。 该装置在制造VLSI电路期间减少对洁净室的污染。 该装置包括支撑晶片的台（3026）和设置在晶片表面上的抛光垫（3024）。 抛光垫在晶片表面进行化学机械抛光。 此外，提供至少一个清洁头（3042,3044,3046）以清洁晶片的表面。 晶片和清洁头容纳在腔室（30）中。 引导装置（32）用于将清洁头引导到晶片上以清洁晶片的表面。

公开(公告)号：US06660629B2

公开(公告)日：2003-12-09

申请号：US10077276

申请日：2002-02-14

申请人： Bih-Tiao Lin

发明人： Bih-Tiao Lin

IPC分类号： H01L214763

CPC分类号： H01L21/3212 ,  H01L21/7684

摘要： A method of fabricating a copper damascene. The method is applicable to a substrate, which substrate has a dielectric layer formed thereon. The method comprising forming a damascene opening in the dielectric layer, forming a barrier layer which conforms to a profile of the damascene opening over the substrate, and forming a conformal copper seeding layer on the barrier layer. A copper layer is then formed on the copper seeding layer, wherein the copper seeding layer has a thickness that is sufficient to fill the damascene opening, followed by forming a conformal protective layer on the copper layer. A first CMP step is performed to remove the protective layer, while a portion of the copper layer outside the damascene opening is removed until the protective layer is completely removed, wherein a first polishing rate is faster than a second polishing rate. A second CMP step is further performed to remove portions of the copper layer, the copper seeding layer, and the barrier layer outside the damascene opening, so as to form a copper damascene. A third polishing rate for the copper layer is provided in the second CMP step, wherein the third polishing rate is slower than the first polishing rate.

摘要翻译： 一种制造铜大马士革的方法。 该方法适用于基板，该基板上形成有电介质层。 该方法包括在电介质层中形成镶嵌开口，形成与衬底上的镶嵌开口的轮廓一致的阻挡层，以及在阻挡层上形成保形铜接种层。 然后在铜接种层上形成铜层，其中铜接种层具有足以填充镶嵌开口的厚度，随后在铜层上形成共形保护层。 执行第一CMP步骤以去除保护层，同时去除镶嵌开口外部的铜层的一部分直到保护层被完全去除，其中第一抛光速率比第二抛光速率快。 进一步执行第二CMP步骤以去除镶嵌开口外部的铜层，铜接种层和阻挡层的部分，以形成铜镶嵌件。 在第二CMP步骤中提供了铜层的第三抛光速率，其中第三抛光速率比第一抛光速率慢。

公开(公告)号：US06604849B2

公开(公告)日：2003-08-12

申请号：US09854114

申请日：2001-05-11

申请人： Bih-Tiao Lin ,  Meng-Feng Tsai ,  Rong Jye Jang ,  Kung-Teng Huang

发明人： Bih-Tiao Lin ,  Meng-Feng Tsai ,  Rong Jye Jang ,  Kung-Teng Huang

IPC分类号： B01F1102

CPC分类号： B24B37/04 ,  B01F5/0646 ,  B01F5/0647 ,  B01F5/12 ,  B01F7/00 ,  B01F11/0241 ,  B01F13/1027 ,  B01F15/00136 ,  B01F2003/0028 ,  B01F2003/105 ,  B24B1/04 ,  B24B57/02

摘要： A slurry dilution system with an ultrasonic vibrator capable of diluting slurry in-situ to any desired level of concentration is proposed. Raw slurry and the de-ionized water fed into the slurry dilution system is mixed and homogenized by an ultrasonic vibrator and a mixer. The well-mixed slurry solution is then delivered to a chemical-mechanical polishing station. When the chemical-mechanical station requires slurry of a different concentration, the raw slurry can be diluted to the desired level simply by changing the rate of flow of de-ionized water into the dilution system.

公开(公告)号：US06277751B1

公开(公告)日：2001-08-21

申请号：US09247749

申请日：1999-02-09

申请人： Pao-Kang Niu ,  Chang-Sheng Lee ,  Bih-Tiao Lin ,  Sen-Nan Lee

发明人： Pao-Kang Niu ,  Chang-Sheng Lee ,  Bih-Tiao Lin ,  Sen-Nan Lee

IPC分类号： H01L21302

CPC分类号： H01L21/31053

摘要： A method for planarizing a semiconductor wafer. An insulation layer is formed over the wafer. A spin-on-glass layer is coated over the insulation layer. Subsequently, the spin-on-glass layer is baked to smooth out its upper surface. A chemical-mechanical polishing process is carried out to planarize the insulation layer. The method eliminates recess cavities in the more loosely packed device region of the insulation layer after a planarization process.

摘要翻译： 一种用于平面化半导体晶片的方法。 在晶片上形成绝缘层。 在绝缘层上涂覆旋涂玻璃层。 随后，将旋涂玻璃层烘烤以平滑其上表面。 进行化学机械抛光工艺以使绝缘层平坦化。 在平坦化处理之后，该方法消除了绝缘层更松散的装置区域中的凹陷腔。

公开(公告)号：US6037259A

公开(公告)日：2000-03-14

申请号：US075367

申请日：1998-05-11

申请人： Bih-Tiao Lin ,  Fu-Liang Yang

发明人： Bih-Tiao Lin ,  Fu-Liang Yang

IPC分类号： H01L21/00 ,  H01L23/544 ,  H01L21/302

CPC分类号： H01L21/67282 ,  H01L23/544 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/906 ,  Y10S438/959

摘要： After identifying characters are written on the wafer surface 16 as a pattern of small holes 19 formed with a laser in the wafer I.D. stage of a semiconductor manufacturing process, the wafer surface in the region of the I.D. is polished to break loose deposits of silicon 20 that are left on the wafer surface and the region is then washed. The process prevents semiconductor material deposited on the wafer surface during the laser operation from later breaking off as hard particles that can scratch the surface of the wafer.

摘要翻译： 将识别出的字符作为在晶片I.D中用激光形成的小孔19的图案写在晶片表面16上。 半导体制造过程的阶段，晶片表面在I.D.的区域中。 被抛光以破坏残留在晶片表面上的硅20的松散沉积物，然后该区域被洗涤。 该过程防止在激光操作期间沉积在晶片表面上的半导体材料随后被破坏，作为可能划伤晶片表面的硬质颗粒。