公开(公告)号：US4329706A

公开(公告)日：1982-05-11

申请号：US16647

申请日：1979-03-01

申请人： Billy L. Crowder ,  Arnold Reisman

发明人： Billy L. Crowder ,  Arnold Reisman

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/331 ,  H01L21/336 ,  H01L23/29 ,  H01L23/31 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/108 ,  H01L29/43 ,  H01L29/49 ,  H01L29/73 ,  H01L29/04 ,  H01L23/48 ,  H01L29/46

CPC分类号： H01L29/4983 ,  H01L21/28061 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/5222 ,  H01L23/53271 ,  H01L27/10805 ,  H01L29/4933 ,  H01L29/66606 ,  H01L2924/0002 ,  H01L2924/19041

摘要： An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices.

摘要翻译： 半导体集成电路的改进的互连由掺杂多晶硅和金属硅化物制成的构件提供，其提供了多层集成电路器件中高导电性和降低重叠电容的同时优势。 这种互连构件可用于产生场效应晶体管型器件。

公开(公告)号：US5530290A

公开(公告)日：1996-06-25

申请号：US226103

申请日：1994-04-11

申请人： John M. Aitken ,  Klaus D. Beyer ,  Billy L. Crowder ,  Stephen E. Greco

发明人： John M. Aitken ,  Klaus D. Beyer ,  Billy L. Crowder ,  Stephen E. Greco

IPC分类号： H01L27/04 ,  H01L21/768 ,  H01L21/822 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535

CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002

摘要： Fabrication methods for forming a network of walls concurrently with the formation of studs for interconnecting plural device layers of a large scale integrated circuit device permits aggressive reduction of the average dielectric constant of air dielectric structures. Wall sections may be positioned to laterally support high aspect ratio connecting studs with a network of open or closed polygons. Wall patterns may also be open from layer to layer to allow formation of large scale air dielectric structures over a plurality of layers in a single material removal step. A wide range of shear strengths and reductions of average dielectric constant can be achieved even within a single device layer of a large scale integrated circuit and exploited to meet circuit design and device fabrication process requirements.

摘要翻译： 用于形成用于互连大规模集成电路器件的多个器件层的螺柱的壁的形成网络的制造方法允许大大降低空气电介质结构的平均介电常数。 壁部分可以被定位成横向支撑具有开放或闭合多边形网络的高纵横比连接螺柱。 壁图案也可以从一层开放，以允许在单个材料去除步骤中在多个层上形成大规模空气介电结构。 即使在大规模集成电路的单个器件层内，也可以获得宽范围的剪切强度和平均介电常数的降低，并被用于满足电路设计和器件制造工艺要求。

公开(公告)号：US4364166A

公开(公告)日：1982-12-21

申请号：US298551

申请日：1981-09-02

申请人： Billy L. Crowder ,  Arnold Reisman

发明人： Billy L. Crowder ,  Arnold Reisman

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L23/29 ,  H01L23/31 ,  H01L23/522 ,  H01L23/532 ,  H01L27/108 ,  H01L29/49 ,  H01L21/225

CPC分类号： H01L29/4983 ,  H01L21/28061 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/5222 ,  H01L23/53271 ,  H01L27/10805 ,  H01L29/4933 ,  H01L29/66606 ,  H01L2924/0002 ,  H01L2924/19041 ,  Y10S438/958

摘要： An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices.

摘要翻译： 半导体集成电路的改进的互连由掺杂多晶硅和金属硅化物制成的构件提供，其提供了多层集成电路器件中高导电性和降低重叠电容的同时优势。 这种互连构件可用于产生场效应晶体管型器件。

公开(公告)号：US4274105A

公开(公告)日：1981-06-16

申请号：US974594

申请日：1978-12-29

申请人： Billy L. Crowder ,  Fritz H. Gaensslen ,  Richard C. Jaeger

发明人： Billy L. Crowder ,  Fritz H. Gaensslen ,  Richard C. Jaeger

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L29/10 ,  H01L29/167

CPC分类号： H01L29/1033 ,  H01L21/26506 ,  H01L29/1054 ,  H01L29/167

摘要： The sensitivity of the threshold voltage in MOSFET devices to changes in substrate voltage may be reduced at a given temperature by the introduction of sufficiently deep energy level, low diffusivity impurities into the depletion region under the gate of the MOSFET.

摘要翻译： MOSFET器件中的阈值电压对于衬底电压变化的灵敏度可以通过在MOSFET的栅极下方的耗尽区域中引入足够深的能级，低扩散性杂质而在给定温度下降低。

公开(公告)号：US5444015A

公开(公告)日：1995-08-22

申请号：US225685

申请日：1994-04-11

申请人： John M. Aitken ,  Klaus D. Beyer ,  Billy L. Crowder ,  Stephen E. Greco

发明人： John M. Aitken ,  Klaus D. Beyer ,  Billy L. Crowder ,  Stephen E. Greco

IPC分类号： H01L27/04 ,  H01L21/768 ,  H01L21/822 ,  H01L23/522 ,  H01L21/28

CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002

摘要： Fabrication methods for forming a network of walls concurrently with the formation of studs for interconnecting plural device layers of a large scale integrated circuit device permits aggressive reduction of the average dielectric constant of air dielectric structures. Wall sections may be positioned to laterally support high aspect ratio connecting studs with a network of open or closed polygons. Wall patterns may also be open from layer to layer to allow formation of large scale air dielectric structures over a plurality of layers in a single material removal step. A wide range of shear strengths and reductions of average dielectric constant can be achieved even within a single device layer of a large scale integrated circuit and exploited to meet circuit design and device fabrication process requirements.

摘要翻译： 用于形成用于互连大规模集成电路器件的多个器件层的螺柱的壁的形成网络的制造方法允许大大降低空气电介质结构的平均介电常数。 壁部分可以被定位成横向支撑具有开放或闭合多边形网络的高纵横比连接螺柱。 壁图案也可以从一层开放，以允许在单个材料去除步骤中在多个层上形成大规模空气介电结构。 即使在大规模集成电路的单个器件层内，也可以获得宽范围的剪切强度和平均介电常数的降低，并被用于满足电路设计和器件制造工艺要求。

公开(公告)号：US5363550A

公开(公告)日：1994-11-15

申请号：US996210

申请日：1992-12-23

申请人： John M. Aitken ,  Shahzad Akbar ,  Billy L. Crowder ,  Asif Iqbal ,  Perwaiz Nihal

发明人： John M. Aitken ,  Shahzad Akbar ,  Billy L. Crowder ,  Asif Iqbal ,  Perwaiz Nihal

IPC分类号： H01P3/06 ,  H01B13/20

CPC分类号： H01P3/06 ,  Y10T29/49123 ,  Y10T29/49155 ,  Y10T29/49165

摘要： A method of fabricating a micro-coaxial wiring structure comprises forming a first insulation layer and patterning a trench therein. A first conductive layer is formed on the first insulation layer and having a shape conforming to the insulation layer and lining the trench. A second insulation layer is formed on the first conductive layer within the trench and having a shape conforming to the first conductive layer lining the trench. A conductive signal line having a predetermined aspect ratio for providing a desired value of resistance per unit length is formed on the second insulation layer within the trench. A third insulation layer is then formed. Lastly, a conductive shielding line is formed upon the third insulation layer, the conductive shielding line being aligned with the conductive signal line.

摘要翻译： 制造微同轴布线结构的方法包括形成第一绝缘层并在其中图案化沟槽。 第一导电层形成在第一绝缘层上并且具有与绝缘层一致的形状并衬在沟槽上。 第二绝缘层形成在沟槽内的第一导电层上，并且具有与衬套在沟槽上的第一导电层一致的形状。 在沟槽内的第二绝缘层上形成具有用于提供每单位长度的电阻值的预定宽高比的导电信号线。 然后形成第三绝缘层。 最后，在第三绝缘层上形成导电屏蔽线，导电屏蔽线与导电信号线对齐。

公开(公告)号：US4180596A

公开(公告)日：1979-12-25

申请号：US811914

申请日：1977-06-30

申请人： Billy L. Crowder ,  Stanley Zirinsky

发明人： Billy L. Crowder ,  Stanley Zirinsky

IPC分类号： H01L21/60 ,  H01B13/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/49 ,  H01L29/78 ,  C23C11/08 ,  C23C11/00

CPC分类号： H01L29/4933 ,  H01L21/28061 ,  H01L21/28518 ,  Y10S148/14 ,  Y10S148/147

摘要： A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.

摘要翻译： 一种在衬底上提供诸如硅化钼和/或硅化硅和/或硅化钨和/或矽硅化物的金属硅化物层的方法，其包括将硅和相应的金属共蒸发到衬底上，然后热处理衬底 以形成金属硅化物。

公开(公告)号：US3936322A

公开(公告)日：1976-02-03

申请号：US492667

申请日：1974-07-29

申请人： Joseph M. Blum ,  Billy L. Crowder ,  James C. McGroddy

发明人： Joseph M. Blum ,  Billy L. Crowder ,  James C. McGroddy

IPC分类号： H01L21/265 ,  H01L33/00 ,  H01S5/00 ,  H01S5/20 ,  H01S5/40 ,  H01L21/26

CPC分类号： H01S5/4031 ,  H01L33/00 ,  H01S5/20 ,  H01S5/2059

摘要： A method for improving the current confinement capacity of a double heterojunction laser by using a high energy implantation of oxygen in the regions of an injection laser surrounding the active region of such laser so as to make such regions semi-insulating.

摘要翻译： 一种用于通过在围绕这种激光器的有源区域的注入激光器的区域中使用高能量注入氧来提高双异质结激光器的电流限制能力的方法，以使这种区域半绝缘。