公开(公告)号：US20100308366A1

公开(公告)日：2010-12-09

申请号：US11517343

申请日：2006-09-08

申请人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

发明人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

IPC分类号： H01L33/02 ,  H01L33/12 ,  H01L33/36

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L2933/0016

摘要： A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

摘要翻译： 氮化物半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p型电极; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。 p电极和n电极形成为具有依次层叠欧姆接触层，含有铝或银的化合物层和降解防止层的多层结构。

公开(公告)号：US07297988B2

公开(公告)日：2007-11-20

申请号：US11319343

申请日：2005-12-28

申请人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

发明人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

IPC分类号： H01L29/22 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

摘要翻译： 本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。 本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

公开(公告)号：US07868344B2

公开(公告)日：2011-01-11

申请号：US11517343

申请日：2006-09-08

申请人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

发明人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L2933/0016

摘要： A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

摘要翻译： 氮化物半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p型电极; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。 p电极和n电极形成为具有依次层叠欧姆接触层，含有铝或银的化合物层和降解防止层的多层结构。