Adaptive gate drive control method and circuit for composite power switch
    1.
    发明授权
    Adaptive gate drive control method and circuit for composite power switch 有权
    自适应栅极驱动控制方法和复合电源开关电路

    公开(公告)号:US09030054B2

    公开(公告)日:2015-05-12

    申请号:US13431329

    申请日:2012-03-27

    摘要: Provided is a method of controlling a hybrid switch comprising a first individually controllable semiconductor switch operably coupled in parallel to a second individually controllable semiconductor switch. The first semiconductor switch has a faster switching speed and lower power-processing capability than the second semiconductor switch. A first reference value V1REF for a first default turn-on transition time interval ΔT1 and a second reference value V2REF for a second default turn-off transition time interval ΔT2 are accessed for the controllable hybrid switch, which is enabled and controlled so that it operates in accordance with V1REF and V2REF. The duration of the default ΔT1 and ΔT2 used to control operation of the controllable hybrid switch is dynamically adjusted to compensate for at least one of variations in a current to a load operably coupled to the controllable hybrid switch and environmental conditions at the controllable hybrid switch.

    摘要翻译: 提供了一种控制混合开关的方法,该混合开关包括可操作地并联到第二独立可控半导体开关的第一独立可控半导体开关。 第一半导体开关具有比第二半导体开关更快的开关速度和更低的功率处理能力。 为可控混合开关访问第一默认接通转换时间间隔&Dgr; T1的第一参考值V1REF和用于第二默认关断转换时间间隔&Dgr; T2的第二参考值V2REF,其被启用和控制 使其按照V1REF和V2REF进行操作。 用于控制可控混合开关的操作的默认&Dgr; T1和&Dgr; T2的持续时间被动态地调整,以补偿电流与可控制的混合开关可操作地耦合的负载的电流变化中的至少一个和 可控混合开关。

    Integrated smart power switch
    2.
    发明授权
    Integrated smart power switch 有权
    集成智能电源开关

    公开(公告)号:US08076967B2

    公开(公告)日:2011-12-13

    申请号:US12904366

    申请日:2010-10-14

    申请人: Boris S. Jacobson

    发明人: Boris S. Jacobson

    IPC分类号: H01L35/00

    摘要: A device including a controllable semiconductor, sensor, and controller is provided. The controllable semiconductor is associated with a first operating parameter and a second operating parameter, wherein at least the first operating parameter is controllable. The sensor is in communication with the controllable semiconductor device and acquires data relating to the second operating parameter of the controllable semiconductor device. The controller is in communication with the controllable semiconductor device and the sensor, and the controller is configured to access device data associated with the controllable semiconductor, control the first operating parameter of the controllable semiconductor, and receive data from the first sensor relating to the second operating parameter. The controller determines a first predicted value dependent on the device data, compares the data relating to the second operating parameter with the first predicted value, and, if a first condition is detected based on this comparison, dynamically modifies the first operating parameter.

    摘要翻译: 提供了包括可控半导体,传感器和控制器的装置。 可控半导体与第一操作参数和第二操作参数相关联,其中至少第一操作参数是可控的。 传感器与可控半导体器件通信,并且获取与可控半导体器件的第二操作参数相关的数据。 控制器与可控半导体器件和传感器通信,并且控制器被配置为访问与可控半导体相关联的器件数据,控制可控半导体的第一操作参数,以及从第一传感器接收与第二传感器相关的数据 操作参数。 控制器根据设备数据确定第一预测值,将与第二操作参数相关的数据与第一预测值进行比较,并且如果基于该比较检测到第一条件,则动态地修改第一操作参数。

    Intelligent power system
    3.
    发明授权
    Intelligent power system 有权
    智能电力系统

    公开(公告)号:US07825536B2

    公开(公告)日:2010-11-02

    申请号:US10692580

    申请日:2003-10-24

    IPC分类号: H02J3/38

    摘要: An intelligent power system includes one or more common power sources and one or more subsystem components interconnected with the common power sources. Each common power source includes a regulated bus, an unregulated bus, a sensor, a controller and a plurality of switches operated by the controller. A subsystem component includes a regulated bus, an unregulated bus, a power source, a sensor, a controller and a plurality of switches operated by the controller. With such a configuration, the system is able detect and isolate failed segments of the power system and is reconfigurable to restore power.

    摘要翻译: 智能电力系统包括一个或多个公共电源和与公共电源互连的一个或多个子系统组件。 每个公共电源包括调节总线,不受监管的总线,传感器,控制器和由控制器操作的多个开关。 子系统部件包括调节总线,不受监管的总线,电源,传感器,控制器和由控制器操作的多个开关。 通过这样的配置,系统能够检测和隔离电力系统的故障段,并且可重新配置以恢复电力。

    INTEGRATED SMART POWER SWITCH
    4.
    发明申请
    INTEGRATED SMART POWER SWITCH 有权
    集成智能电源开关

    公开(公告)号:US20110050324A1

    公开(公告)日:2011-03-03

    申请号:US12904366

    申请日:2010-10-14

    申请人: Boris S. Jacobson

    发明人: Boris S. Jacobson

    IPC分类号: H03K3/011

    摘要: A device including a controllable semiconductor, sensor, and controller is provided. The controllable semiconductor is associated with a first operating parameter and a second operating parameter, wherein at least the first operating parameter is controllable. The sensor is in communication with the controllable semiconductor device and acquires data relating to the second operating parameter of the controllable semiconductor device. The controller is in communication with the controllable semiconductor device and the sensor, and the controller is configured to access device data associated with the controllable semiconductor, control the first operating parameter of the controllable semiconductor, and receive data from the first sensor relating to the second operating parameter. The controller determines a first predicted value dependent on the device data, compares the data relating to the second operating parameter with the first predicted value, and, if a first condition is detected based on this comparison, dynamically modifies the first operating parameter.

    摘要翻译: 提供了包括可控半导体,传感器和控制器的装置。 可控半导体与第一操作参数和第二操作参数相关联,其中至少第一操作参数是可控的。 传感器与可控半导体器件通信,并且获取与可控半导体器件的第二操作参数相关的数据。 控制器与可控半导体器件和传感器通信,并且控制器被配置为访问与可控半导体相关联的器件数据,控制可控半导体的第一操作参数,以及从第一传感器接收与第二传感器相关的数据 操作参数。 控制器根据设备数据确定第一预测值,将与第二操作参数相关的数据与第一预测值进行比较,并且如果基于该比较检测到第一条件,则动态地修改第一操作参数。

    High frequency resonant gate drive for a power MOSFET
    5.
    发明授权
    High frequency resonant gate drive for a power MOSFET 失效
    功率MOSFET的高频谐振栅极驱动

    公开(公告)号:US5264736A

    公开(公告)日:1993-11-23

    申请号:US874893

    申请日:1992-04-28

    申请人: Boris S. Jacobson

    发明人: Boris S. Jacobson

    摘要: An efficient power MOSFET resonant gate drive circuit having a large coupled inductor between and in series with two switching transistors. The inductor prevents cross-conduction from the power bus through the drive transistors as may be caused by simultaneous turn-on due either to switching delays or single-event-upset-radiation from energetic cosmic rays. In either case, the inductor presents a high impedance for current that tries to flow through both transistors simultaneously. A center tap on the inductor is connected to the gate of the power MOSFET. An equivalent inductance resonates with the equivalent capacitance of the gate of the power MOSFET providing fast turn-on of the power MOSFET. During turn-off of the power MOSFET, one drive transistor is switched-off and the other drive transistor is switched-on. The voltage generated by the coupled inductor exceeds the magnitude of the input voltage causing a diode within the off-transistor to turn-on and return energy back to the power source, thereby further increasing the circuit efficiency.

    ADAPTIVE GATE DRIVE CONTROL METHOD AND CIRCUIT FOR COMPOSITE POWER SWITCH
    6.
    发明申请
    ADAPTIVE GATE DRIVE CONTROL METHOD AND CIRCUIT FOR COMPOSITE POWER SWITCH 有权
    用于复合动力开关的自适应门驱动控制方法和电路

    公开(公告)号:US20130257177A1

    公开(公告)日:2013-10-03

    申请号:US13431329

    申请日:2012-03-27

    IPC分类号: H03K17/56

    摘要: Provided is a method of controlling a hybrid switch comprising a first individually controllable semiconductor switch operably coupled in parallel to a second individually controllable semiconductor switch. The first semiconductor switch has a faster switching speed and lower power-processing capability than the second semiconductor switch. A first reference value V1REF for a first default turn-on transition time interval ΔT1 and a second reference value V2REF for a second default turn-off transition time interval ΔT2 are accessed for the controllable hybrid switch, which is enabled and controlled so that it operates in accordance with V1REF and V2REF. The duration of the default ΔT1 and ΔT2 used to control operation of the controllable hybrid switch is dynamically adjusted to compensate for at least one of variations in a current to a load operably coupled to the controllable hybrid switch and environmental conditions at the controllable hybrid switch.

    摘要翻译: 提供了一种控制混合开关的方法,该混合开关包括可操作地并联到第二独立可控半导体开关的第一独立可控半导体开关。 第一半导体开关具有比第二半导体开关更快的开关速度和更低的功率处理能力。 为可控混合开关访问第一默认接通转换时间间隔DeltaT1的第一参考值V1REF和用于第二默认关断转换时间间隔DeltaT2的第二参考值V2REF,其被启用和控制以使其操作 符合V1REF和V2REF。 动态地调整用于控制可控混合开关的操作的默认DeltaT1和DeltaT2的持续时间,以补偿可操作地耦合到可控混合开关的负载的电流的电流变化和可控混合开关的环境条件中的至少一个变化。

    Planar magnetic structure
    7.
    发明授权
    Planar magnetic structure 有权
    平面磁结构

    公开(公告)号:US08089331B2

    公开(公告)日:2012-01-03

    申请号:US12454083

    申请日:2009-05-12

    摘要: An improved planar magnetic structure in which the voltage gradient between core and windings is reduced by shields disposed between the one or more legs of the core and the windings and extending through the PWB layers; vias are offset to permit them to be contained within the path of the winding; and the induced magnetic and eddy currents intrinsic to interstitial shield layers are reduced by configuring the shield conductors with pairs of courses with opposite and offsetting current propagation.

    摘要翻译: 一种改进的平面磁结构,其中芯和绕组之间的电压梯度由设置在芯的一个或多个支腿和绕组之间并通过PWB层延伸的屏蔽而减小; 通孔被偏移以允许它们被包含在绕组的路径内; 并且间隙屏蔽层固有的感应磁场和涡流通过将屏蔽导体配对成对的具有相反和偏移电流传播的方式来减少。

    Planar magnetic structure
    8.
    发明申请
    Planar magnetic structure 有权
    平面磁结构

    公开(公告)号:US20100289610A1

    公开(公告)日:2010-11-18

    申请号:US12454083

    申请日:2009-05-12

    IPC分类号: H01F27/36

    摘要: An improved planar magnetic structure in which the voltage gradient between core and windings is reduced by shields disposed between the one or more legs of the core and the windings and extending through the PWB layers; vias are offset to permit them to be contained within the path of the winding; and the induced magnetic and eddy currents intrinsic to interstitial shield layers are reduced by configuring the shield conductors with pairs of courses with opposite and offsetting current propagation.

    摘要翻译: 一种改进的平面磁结构,其中芯和绕组之间的电压梯度由设置在芯的一个或多个支腿和绕组之间并通过PWB层延伸的屏蔽而减小; 通孔被偏移以允许它们被包含在绕组的路径内; 并且间隙屏蔽层固有的感应磁场和涡流通过将屏蔽导体配对成对的具有相反和偏移电流传播的方式来减少。

    Fabrication method and structure for embedded core transformers
    9.
    发明授权
    Fabrication method and structure for embedded core transformers 有权
    嵌入式核心变压器的制造方法和结构

    公开(公告)号:US07489226B1

    公开(公告)日:2009-02-10

    申请号:US12151870

    申请日:2008-05-09

    IPC分类号: H01F27/28

    摘要: An embedded core electrical transformer (120) for DC to DC current conversion at a switching frequency of 1 MHz has reduced volume and weight with increased power density. The electrical transformer (120) utilizes a plurality of conductive elements (132) disposed inside a hollow cavity (128) used to embed two magnetic cores (134, 136). The conductive elements (132) encircle three sides of the embedded cores (134, 136) and interface with a multilayer PCB (137) which includes conductive traces formed therein to encircle a fourth side of the embedded cores and to form primary and secondary winding circuits.

    摘要翻译: 用于以1MHz的开关频率进行DC至DC电流转换的嵌入式核心电力变压器(120)具有随着功率密度的增加而减小的体积和重量。 电变压器(120)利用设置在用于嵌入两个磁芯(134,136)的空腔(128)内的多个导电元件(132)。 导电元件(132)环绕嵌入式芯(134,136)的三面并与多层PCB(137)接合,多层PCB(137)包括形成在其中的导电迹线,以包围嵌入式芯的第四侧,并且形成初级和次级绕组电路 。