摘要:
Provided is a method of controlling a hybrid switch comprising a first individually controllable semiconductor switch operably coupled in parallel to a second individually controllable semiconductor switch. The first semiconductor switch has a faster switching speed and lower power-processing capability than the second semiconductor switch. A first reference value V1REF for a first default turn-on transition time interval ΔT1 and a second reference value V2REF for a second default turn-off transition time interval ΔT2 are accessed for the controllable hybrid switch, which is enabled and controlled so that it operates in accordance with V1REF and V2REF. The duration of the default ΔT1 and ΔT2 used to control operation of the controllable hybrid switch is dynamically adjusted to compensate for at least one of variations in a current to a load operably coupled to the controllable hybrid switch and environmental conditions at the controllable hybrid switch.
摘要:
A device including a controllable semiconductor, sensor, and controller is provided. The controllable semiconductor is associated with a first operating parameter and a second operating parameter, wherein at least the first operating parameter is controllable. The sensor is in communication with the controllable semiconductor device and acquires data relating to the second operating parameter of the controllable semiconductor device. The controller is in communication with the controllable semiconductor device and the sensor, and the controller is configured to access device data associated with the controllable semiconductor, control the first operating parameter of the controllable semiconductor, and receive data from the first sensor relating to the second operating parameter. The controller determines a first predicted value dependent on the device data, compares the data relating to the second operating parameter with the first predicted value, and, if a first condition is detected based on this comparison, dynamically modifies the first operating parameter.
摘要:
An intelligent power system includes one or more common power sources and one or more subsystem components interconnected with the common power sources. Each common power source includes a regulated bus, an unregulated bus, a sensor, a controller and a plurality of switches operated by the controller. A subsystem component includes a regulated bus, an unregulated bus, a power source, a sensor, a controller and a plurality of switches operated by the controller. With such a configuration, the system is able detect and isolate failed segments of the power system and is reconfigurable to restore power.
摘要:
A device including a controllable semiconductor, sensor, and controller is provided. The controllable semiconductor is associated with a first operating parameter and a second operating parameter, wherein at least the first operating parameter is controllable. The sensor is in communication with the controllable semiconductor device and acquires data relating to the second operating parameter of the controllable semiconductor device. The controller is in communication with the controllable semiconductor device and the sensor, and the controller is configured to access device data associated with the controllable semiconductor, control the first operating parameter of the controllable semiconductor, and receive data from the first sensor relating to the second operating parameter. The controller determines a first predicted value dependent on the device data, compares the data relating to the second operating parameter with the first predicted value, and, if a first condition is detected based on this comparison, dynamically modifies the first operating parameter.
摘要:
An efficient power MOSFET resonant gate drive circuit having a large coupled inductor between and in series with two switching transistors. The inductor prevents cross-conduction from the power bus through the drive transistors as may be caused by simultaneous turn-on due either to switching delays or single-event-upset-radiation from energetic cosmic rays. In either case, the inductor presents a high impedance for current that tries to flow through both transistors simultaneously. A center tap on the inductor is connected to the gate of the power MOSFET. An equivalent inductance resonates with the equivalent capacitance of the gate of the power MOSFET providing fast turn-on of the power MOSFET. During turn-off of the power MOSFET, one drive transistor is switched-off and the other drive transistor is switched-on. The voltage generated by the coupled inductor exceeds the magnitude of the input voltage causing a diode within the off-transistor to turn-on and return energy back to the power source, thereby further increasing the circuit efficiency.
摘要:
Provided is a method of controlling a hybrid switch comprising a first individually controllable semiconductor switch operably coupled in parallel to a second individually controllable semiconductor switch. The first semiconductor switch has a faster switching speed and lower power-processing capability than the second semiconductor switch. A first reference value V1REF for a first default turn-on transition time interval ΔT1 and a second reference value V2REF for a second default turn-off transition time interval ΔT2 are accessed for the controllable hybrid switch, which is enabled and controlled so that it operates in accordance with V1REF and V2REF. The duration of the default ΔT1 and ΔT2 used to control operation of the controllable hybrid switch is dynamically adjusted to compensate for at least one of variations in a current to a load operably coupled to the controllable hybrid switch and environmental conditions at the controllable hybrid switch.
摘要:
An improved planar magnetic structure in which the voltage gradient between core and windings is reduced by shields disposed between the one or more legs of the core and the windings and extending through the PWB layers; vias are offset to permit them to be contained within the path of the winding; and the induced magnetic and eddy currents intrinsic to interstitial shield layers are reduced by configuring the shield conductors with pairs of courses with opposite and offsetting current propagation.
摘要:
An improved planar magnetic structure in which the voltage gradient between core and windings is reduced by shields disposed between the one or more legs of the core and the windings and extending through the PWB layers; vias are offset to permit them to be contained within the path of the winding; and the induced magnetic and eddy currents intrinsic to interstitial shield layers are reduced by configuring the shield conductors with pairs of courses with opposite and offsetting current propagation.
摘要:
An embedded core electrical transformer (120) for DC to DC current conversion at a switching frequency of 1 MHz has reduced volume and weight with increased power density. The electrical transformer (120) utilizes a plurality of conductive elements (132) disposed inside a hollow cavity (128) used to embed two magnetic cores (134, 136). The conductive elements (132) encircle three sides of the embedded cores (134, 136) and interface with a multilayer PCB (137) which includes conductive traces formed therein to encircle a fourth side of the embedded cores and to form primary and secondary winding circuits.
摘要:
Methods and apparatus for a circuit including first and second energy sources, a rectifier coupled to the first and second energy sources, first and second energy storage devices coupled end-to-end across the positive and negative rails, and a single three-level inverter coupled to the rectifier for providing three-phase sinusoidal output voltages.