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公开(公告)号：US08225472B2
公开(公告)日：2012-07-24
申请号：US13012936
申请日：2011-01-25
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Forming a thin film acoustic device by patterning a layer of non-conducting material on a first side of a substrate to expose a portion of the first substrate side; depositing layers of conducting material on the layer of non-conducting material and the exposed portion of the first substrate side; depositing a layer of piezoelectric material on the layers of conducting material; depositing and patterning additional layers of material on the layer of piezoelectric material to form a first device electrode; depositing and patterning a masking layer on a second side of the substrate to expose a portion of the second substrate side; etching away the exposed substrate portion to expose the patterned layer of non-conducting material and a portion of the layers of conducting material; and etching away the exposed portion of the layers of conducting material to form a second device electrode.
摘要翻译： 通过在衬底的第一侧上图案化非导电材料层以暴露第一衬底侧的一部分来形成薄膜声学器件; 在非导电材料层和第一衬底侧的暴露部分上沉积导电材料层; 在导电材料层上沉积一层压电材料; 在所述压电材料层上沉积和图形附加的材料层以形成第一器件电极; 在所述衬底的第二侧上沉积和图案化掩模层以暴露所述第二衬底侧的一部分; 蚀刻掉暴露的衬底部分以暴露非导电材料的图案化层和导电材料层的一部分; 并蚀刻掉导电材料层的暴露部分以形成第二器件电极。
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公开(公告)号：US07895720B2
公开(公告)日：2011-03-01
申请号：US12185305
申请日：2008-08-04
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.
摘要翻译： 公开了在图案化的底层的边缘或台阶上制造坚固的薄膜的方法。 新颖的方法减少了电极台阶或边缘对膜完整性的负面影响。 因此，该方法特别适用于膜释放技术。 消除或减少台阶或边缘的高度以增加膜的机械完整性。
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公开(公告)号：US20090049670A1
公开(公告)日：2009-02-26
申请号：US12185305
申请日：2008-08-04
IPC分类号： H01L41/22
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.
摘要翻译： 公开了在图案化的底层的边缘或台阶上制造坚固的薄膜的方法。 新颖的方法减少了电极台阶或边缘对膜完整性的负面影响。 因此，该方法特别适用于膜释放技术。 消除或减少台阶或边缘的高度以增加膜的机械完整性。
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公开(公告)号：US07296329B1
公开(公告)日：2007-11-20
申请号：US09497993
申请日：2000-02-04
CPC分类号： H03H3/02 , H03H9/02118 , H03H9/172
摘要： A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.
摘要翻译： 隔离压电薄膜声谐振器装置以防止由装置产生的横向传播波离开装置和/或干扰相邻装置或系统的方法。 具体地说，这种隔离技术涉及在声谐振器件之间的压电材料层的操纵或隔离，以便限制在横向上远离器件传播的声能的量。 在一个方面，通过RF和声能之间的转换不涉及信号传输的压电材料的至少一部分被从器件中去除。 在另一方面，压电材料的生长在装置的制造期间被限制到某些区域。 在另一方面，在器件制造期间压电材料的晶体取向被破坏或改变，以便形成具有优异的压电性能的区域和表现出差的压电特性的区域。
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公开(公告)号：US08631547B2
公开(公告)日：2014-01-21
申请号：US11906196
申请日：2007-10-01
CPC分类号： H03H3/02 , H03H9/02118 , H03H9/172
摘要： A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.
摘要翻译： 隔离压电薄膜声谐振器装置以防止由装置产生的横向传播波离开装置和/或干扰相邻装置或系统的方法。 具体地说，这种隔离技术涉及在声谐振器件之间的压电材料层的操纵或隔离，以便限制在横向上远离器件传播的声能的量。 在一个方面，通过RF和声能之间的转换不涉及信号传输的压电材料的至少一部分被从器件中去除。 在另一方面，压电材料的生长在装置的制造期间被限制到某些区域。 在另一方面，在器件制造期间压电材料的晶体取向被破坏或改变，以便形成具有优异的压电性能的区域和表现出差的压电特性的区域。
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公开(公告)号：US06657517B2
公开(公告)日：2003-12-02
申请号：US10028191
申请日：2001-12-20
IPC分类号： H03H9205
CPC分类号： H03H3/04 , H03H2003/0428 , Y10T29/42
摘要： Differing metallic electrodes having the same or differing thickness are formed at different locations on a support structure and/or on a single thickness film of piezoelectric material in order to form a multiple frequency resonator device having greatly separated acoustic resonance frequencies. A plurality of multiple frequency resonators can be combined to form a blank of frequency selective devices in order to handle the many different RF bands, at widely varying frequencies, that wireless communication technologies demand today.
摘要翻译： 形成具有相同或不同厚度的不同金属电极在支撑结构上的不同位置和/或压电材料的单个厚度膜上形成，以形成具有极大分离的声共振频率的多频谐振器装置。 多个多频谐振器可以被组合以形成频率选择装置的空白，以便处理无线通信技术今天需要的广泛变化的频率的许多不同RF频带。
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公开(公告)号：US06603241B1
公开(公告)日：2003-08-05
申请号：US09576807
申请日：2000-05-23
申请人： Bradley Paul Barber , Harold Alexis Huggins , Ronald Eugene Miller , Donald Winslow Murphy , Yiu-Huen Wong
发明人： Bradley Paul Barber , Harold Alexis Huggins , Ronald Eugene Miller , Donald Winslow Murphy , Yiu-Huen Wong
IPC分类号： H03H925
CPC分类号： H03H9/175
摘要： A reflector stack or acoustic mirror arrangement for an acoustic device is described which may attain the highest possible impedance mismatch between alternating higher and lower impedance reflecting layers of the stack, so as to maximize bandwidth. The arrangement may also reduce manufacturing costs by requiring fewer layers for the device, as compared to conventional acoustic mirrors. The thinner reflecting stack is accordingly fabricated in reduced time to lower cost, by incorporating materials providing a larger acoustic impedance mismatch than those currently obtainable. The bandwidth of the resulting acoustic resonator device may be widened, particularly when a low density material such as aerogel, CVD SiO2 and/or sputter deposited SiO2 is applied as topmost layer in the reflector stack/acoustic mirror arrangement of the device.
摘要翻译： 描述了用于声学装置的反射器叠层或声镜装置，其可以在堆叠的交替的较高和较低阻抗反射层之间达到最高可能的阻抗失配，从而最大化带宽。 与传统的声反射镜相比，该装置还可以通过要求较少的器件层来降低制造成本。 因此，通过结合提供比目前可获得的更大的声阻抗失配的材料，减少了较薄的反射叠层，从而降低了成本。 特别是当诸如气凝胶，CVD SiO 2和/或溅射沉积的SiO 2之类的低密度材料作为装置的反射器叠层/声镜装置中的最顶层被施加时，所得到的声共振器装置的带宽可能变宽。
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公开(公告)号：US06601276B2
公开(公告)日：2003-08-05
申请号：US09853373
申请日：2001-05-11
申请人： Bradley Paul Barber
发明人： Bradley Paul Barber
IPC分类号： H04R1700
CPC分类号： H04R17/00 , Y10T29/42 , Y10T29/49156
摘要： The invention relates to manufacturing electromechanical resonators for use in electromechanical filters. Such filters require resonators having different resonant frequencies. Typically all resonators are manufactured having the same resonant frequency and the resonant frequency of selected resonators is altered by the deposition of additional material on selected resonators in the form of additional layers. According to this invention, these layers are formed coextensive with the underlying layers of the resonator by first patterning larger areas of the added material, then masking the patterned areas with masks smaller than the patterned areas and etching both the underlying layer and the patterned area without moving the mask.
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公开(公告)号：US06420202B1
公开(公告)日：2002-07-16
申请号：US09571919
申请日：2000-05-16
IPC分类号： H01L2100
摘要： A process for configuring a thin film resonator to advantageously shape a desired acoustic mode of the resonator such that the electrical and acoustic performance of the resonator is enhanced. As a result of the contouring or shaping, a minimum amount of acoustic energy occurs near the edge of the resonator, from which energy may leak or at which undesired waves may be created by a desired mode. The process is used during batch-fabrication of thin-film resonators which are used in high frequency RF filtering or frequency control applications. Utilizing photolithography, the shaping can be achieved in a manner derived from the known methods used to manufacture lens arrays. Using the process, the lateral motion of acoustic waves within the resonator may be controlled and the acoustic energy of the sound wave positioned at a desired location within the resonator.
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10.发明授权Incremental tuning process for electrical resonators based on mechanical motion 有权基于机械运动的电谐振器的增量调谐过程公开(公告)号：US06339276B1
公开(公告)日：2002-01-15
申请号：US09431772
申请日：1999-11-01
申请人： Bradley Paul Barber , Yiu-Huen Wong
发明人： Bradley Paul Barber , Yiu-Huen Wong
IPC分类号： H01L4104
CPC分类号： H03H9/131 , G04F5/063 , H03H3/04 , H03H9/175 , H03H2003/0428 , H04R15/02 , H04R17/10 , H04R31/00 , Y10S29/016 , Y10T29/42 , Y10T29/435 , Y10T29/49004 , Y10T29/49005
摘要： The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
摘要翻译： 本发明是一种用于调节机械谐振器的谐振频率的方法，该机械谐振器的频率取决于整个谐振器厚度。 使用交替选择性蚀刻来从顶部电极去除不同的调节层。 其中一个电极由多个堆叠的调整层构成，每个层都具有与任何相邻的调整层不同的蚀刻特性。 同样的发明的一部分也是一种共振器结构，其中至少一个电极具有与任何相邻的调整层具有不同蚀刻性能的材料的多个堆叠层，并且每个层的厚度对应于计算出的 谐振器的谐振频率。
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