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    Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
    4.
    发明申请
    Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
    等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体

    公开(公告)号：US20070247075A1

    公开(公告)日：2007-10-25

    申请号：US11490936

    申请日：2006-07-21

    申请人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    发明人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    IPC分类号： C23F1/00

    CPC分类号： H01J37/321 ,  H01J37/3244

    摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.

    摘要翻译： 用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。 反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器 气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。

    Adjusting DC bias voltage in plasma chamber
    6.
    发明授权
    Adjusting DC bias voltage in plasma chamber 失效
    调整等离子体室内的直流偏置电压

    公开(公告)号：US06513452B2

    公开(公告)日：2003-02-04

    申请号：US09841804

    申请日：2001-04-24

    申请人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

    发明人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

    IPC分类号： C23C1600

    CPC分类号： H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

    摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

    摘要翻译： 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

    Shield or ring surrounding semiconductor workpiece in plasma chamber
    8.
    发明授权
    Shield or ring surrounding semiconductor workpiece in plasma chamber 有权
    在等离子体室内围绕半导体工件的屏蔽或环

    公开(公告)号：US06284093B1

    公开(公告)日：2001-09-04

    申请号：US09665484

    申请日：2000-09-20

    申请人： Kuang-Han Ke ,  Bryan Y. Pu ,  Hongching Shan ,  James Wang ,  Henry Fong ,  Zongyu Li ,  Michael D. Welch

    发明人： Kuang-Han Ke ,  Bryan Y. Pu ,  Hongching Shan ,  James Wang ,  Henry Fong ,  Zongyu Li ,  Michael D. Welch

    IPC分类号： H01J100

    CPC分类号： H01L21/67126 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3266 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68721 ,  H01L21/68735 ,  H02N13/00 ,  Y10S156/915

    摘要： A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.

    摘要翻译： 围绕等离子体室中的半导体工件的环或环。 根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。 这种角度取向导致离子轰击提升的轴环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性 由于这种周边附近的任何过量的离子密度而产生的过程。 在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。 在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。 在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

    Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
    9.
    发明授权
    Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
    等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体

    公开(公告)号：US08187415B2

    公开(公告)日：2012-05-29

    申请号：US11490936

    申请日：2006-07-21

    申请人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    发明人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    IPC分类号： H01L21/205 ,  H01L21/28

    CPC分类号： H01J37/321 ,  H01J37/3244

    摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.

    摘要翻译： 用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。 反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器 气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。