摘要:
A memory device includes a bit line sense amplifier, a command decoder configured to generate an internal control signal indicating an operating mode of the memory device, and a bit line sense amplifier controller configured to selectively apply an external voltage as a supply voltage to the bit line sense amplifier in response to the internal control signal.
摘要:
A memory device comprises a normal storage area comprising first and second subsets configured to store first and second normal data, respectively, an error code storage area configured to store first and second error codes corresponding to the first and second normal data, an error detector configured to receive the first and second normal data and the first and second error codes, and further configured to detect the presence or absence of one or more errors in the first and second normal data or the first and second error codes, and a refresh controller configured to set respective refresh cycle times of the first and second subsets to different values according to the presence or absence of one or more errors in the first and second normal data or error codes.
摘要:
A memory device, a memory system, and operating methods thereof are provided. The method of operating the memory device, which includes a first memory cell and a second memory cell neighboring the first memory cell, includes counting a disturbance value of the second memory cell each time the first memory cell is accessed, updating a disturbance count value of the second memory cell based on the counting, adjusting a refresh schedule based on the disturbance count value of the second memory cell, a desired threshold and a maximum disturbance count value, and resetting the disturbance count value of the second memory cell and the maximum disturbance count value when the second memory cell is refreshed according to the adjusted refresh schedule.
摘要:
A delay circuit for a semiconductor device includes a variable resistor unit having a resistance value adjusted in response to a control signal, and a variable load unit having a capacitance value adjusted in response to the control signal. The delay circuit of the present invention includes a variable resistor unit having a variable resistance value and a variable load unit having a variable capacitance value. The delay circuit for a semiconductor device can precisely adjust the delay time of a signal. Further, the capacitance of the variable load unit is very low in an operation mode in which the delay circuit of the present invention is controlled so that it has a short delay time. Therefore, the delay time can be adjusted to a short time by the delay circuit of the present invention.
摘要:
The apparatus may include a non-pumping power supply unit configured to generate a supply voltage from a power source voltage and/or configured to output the supply voltage. The apparatus may include a pumping power supply unit and/or a control circuit. The pumping power supply unit may be configured to generate a pump voltage based on the power source voltage and/or configured to output the pump voltage. The control circuit may boost the supply voltage with the pump voltage after a level of the supply voltage reaches the first target voltage level.
摘要:
The apparatus may include a non-pumping power supply unit configured to generate a supply voltage from a power source voltage and/or configured to output the supply voltage. The apparatus may include a pumping power supply unit and/or a control circuit. The pumping power supply unit may be configured to generate a pump voltage based on the power source voltage and/or configured to output the pump voltage. The control circuit may boost the supply voltage with the pump voltage after a level of the supply voltage reaches the first target voltage level.
摘要:
A memory device includes a bit line sense amplifier, a command decoder configured to generate an internal control signal indicating an operating mode of the memory device, and a bit line sense amplifier controller configured to selectively apply an external voltage as a supply voltage to the bit line sense amplifier in response to the internal control signal.
摘要:
A memory device, a memory system, and operating methods thereof are provided. The method of operating the memory device, which includes a first memory cell and a second memory cell neighboring the first memory cell, includes counting a disturbance value of the second memory cell each time the first memory cell is accessed, updating a disturbance count value of the second memory cell based on the counting, adjusting a refresh schedule based on the disturbance count value of the second memory cell, a desired threshold and a maximum disturbance count value, and resetting the disturbance count value of the second memory cell and the maximum disturbance count value when the second memory cell is refreshed according to the adjusted refresh schedule.
摘要:
A refresh address generator includes a refresh sequence buffer and a refresh address generating unit. The refresh sequence buffer stores a sequence of memory groups, each memory group including a plurality of memory cell rows. The refresh address generating unit generates a plurality of refresh row addresses according to the sequence of memory groups stored in the refresh sequence buffer, in response to a refresh signal.
摘要:
A memory device including: an error correction code (ECC) cell array; an ECC engine configured to receive write data to be written to a memory cell array and generate internal parity bits for the write data; and an ECC select unit configured to receive the internal parity bits and external parity bits and, in response to a first level of a control signal, store the internal parity bits in the ECC cell array and, in response to a second level of the control signal store the external parity bits in the ECC cell array.