摘要:
A method of fabricating multi-layered graphene includes disposing a first graphene layer on a carrier; disposing at least one second graphene layer on the first graphene layer to form a graphene sheet disposed on the carrier; and transferring the graphene sheet disposed on the carrier onto a substrate, wherein each of the graphene layers which constitute the graphene sheet has at least one damaged region, and the at least one damaged region of each of the graphene layers contacts at least one of non-damaged regions of a graphene layer or graphene layers, of the graphene layers, contacting the each of the graphene layers.
摘要:
Disclosed is an apparatus and method of manufacturing a graphene film, wherein the apparatus includes a wrinkle flattening device configured to flatten wrinkles in a lamination structure including a base substrate and a graphene film laminated on the base substrate; and a first lamination apparatus configured to laminate a first substrate on the graphene film, wherein the wrinkle flattening device applies a vacuum to the base substrate when the wrinkle flattening device is in contact with the base substrate.
摘要:
A graphene sheet and a method of manufacturing the graphene sheet are provided. The method includes: growing a graphene sheet on a graphene growth support by applying carbon sources and heat to the graphene growth support, the graphene growth support including a carbonization catalyst; and forming at least one ripple on the graphene sheet by cooling at least one of the graphene growth support and the graphene sheet, wherein the graphene growth support and the graphene sheet have different thermal expansion coefficients.
摘要:
The present application relates to a method for shielding electromagnetic waves by using graphene inside or outside an electromagnetic wave generating source and/or by using graphene formed on a substrate, and an electromagnetic shielding material including the graphene.
摘要:
A method of fabricating multi-layered graphene includes disposing a first graphene layer on a carrier; disposing at least one second graphene layer on the first graphene layer to form a graphene sheet disposed on the carrier; and transferring the graphene sheet disposed on the carrier onto a substrate, wherein each of the graphene layers which constitute the graphene sheet has at least one damaged region, and the at least one damaged region of each of the graphene layers contacts at least one of non-damaged regions of a graphene layer or graphene layers, of the graphene layers, contacting the each of the graphene layers.
摘要:
Ultralong carbon nanotubes can be formed by placing a secondary chamber within a reactor chamber to restrict a flow to provide a laminar flow. Inner shells can be successively extracted from multi-walled carbon nanotubes (MWNTs) such as by applying a lateral force to an elongated tubular sidewall at a location between its two ends. The extracted shells can have varying electrical and mechanical properties that can be used to create useful materials, electrical devices, and mechanical devices.
摘要:
A graphene sheet and a method of manufacturing the graphene sheet are provided. The method includes: growing a graphene sheet on a graphene growth support by applying carbon sources and heat to the graphene growth support, the graphene growth support including a carbonization catalyst; and forming at least one ripple on the graphene sheet by cooling at least one of the graphene growth support and the graphene sheet, wherein the graphene growth support and the graphene sheet have different thermal expansion coefficients.
摘要:
A semiconductor device may include first and second auxiliary gate electrodes and a semiconductor layer crossing the first and second auxiliary gate electrodes. A primary gate electrode may be provided on the semiconductor layer so that the semiconductor layer is between the primary gate electrode and the first and second auxiliary gate electrodes. Moreover, the first and second auxiliary gate electrodes may be configured to induce respective first and second field effect type source/drain regions in the semiconductor layer. Related methods are also discussed.
摘要:
The present disclosure relates to a manufacturing method of a graphene fiber, a graphene fiber manufactured by the same method, and use thereof. The graphene fiber formed by using graphenes of linear pattern can be applied to various fields such as an electric wire and coaxial cable.
摘要:
Disclosed is an apparatus and method of manufacturing a graphene film, wherein the apparatus includes a wrinkle flattening device configured to flatten wrinkles in a lamination structure including a base substrate and a graphene film laminated on the base substrate; and a first lamination apparatus configured to laminate a first substrate on the graphene film, wherein the wrinkle flattening device applies a vacuum to the base substrate when the wrinkle flattening device is in contact with the base substrate.