公开(公告)号：US08995037B2

公开(公告)日：2015-03-31

申请号：US13615346

申请日：2012-09-13

Applicant: Byung Gyu Chae ,  Joonku Hahn ,  Hwi Kim

Inventor： Byung Gyu Chae ,  Joonku Hahn ,  Hwi Kim

IPC: G03H1/12 ,  G02B5/32 ,  G03H1/00 ,  G03H1/22

CPC classification number: G02B5/32 ,  G03H1/2202 ,  G03H1/2286 ,  G03H1/2294 ,  G03H2001/2236 ,  G03H2001/2242 ,  G03H2223/19 ,  G03H2225/33 ,  G03H2225/60 ,  G03H2227/03

Abstract: Holographic display apparatuses are provided. The holographic display apparatus may include a light source module generating coherent light, at least two input optical systems converging the light generated from the light source module on at least two converging points, an output optical system mixing the lights provided from the at least two input optical systems to provide a hologram image, and a spatial light modulating module modulating the light.

Abstract translation: 提供全息显示装置。 全息显示装置可以包括产生相干光的光源模块，至少两个输入光学系统，将从光源模块产生的光会聚在至少两个会聚点上;输出光学系统，混合从至少两个输入 提供全息图的光学系统，以及调制光的空间光调制模块。

公开(公告)号：US20130208328A1

公开(公告)日：2013-08-15

申请号：US13615346

申请日：2012-09-13

Applicant: Byung Gyu CHAE ,  Joonku Hahn ,  Hwi Kim

Inventor： Byung Gyu CHAE ,  Joonku Hahn ,  Hwi Kim

IPC: G03H1/12 ,  G02B5/32

CPC classification number: G02B5/32 ,  G03H1/2202 ,  G03H1/2286 ,  G03H1/2294 ,  G03H2001/2236 ,  G03H2001/2242 ,  G03H2223/19 ,  G03H2225/33 ,  G03H2225/60 ,  G03H2227/03

Abstract: Holographic display apparatuses are provided. The holographic display apparatus may include a light source module generating coherent light, at least two input optical systems converging the light generated from the light source module on at least two converging points, an output optical system mixing the lights provided from the at least two input optical systems to provide a hologram image, and a spatial light modulating module modulating the light.

Abstract translation: 提供全息显示装置。 全息显示装置可以包括产生相干光的光源模块，至少两个输入光学系统，将从光源模块产生的光会聚在至少两个会聚点上;输出光学系统，混合从至少两个输入 提供全息图的光学系统，以及调制光的空间光调制模块。

公开(公告)号：US07989792B2

公开(公告)日：2011-08-02

申请号：US12162964

申请日：2007-01-31

Applicant: Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

Inventor： Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

IPC: H01L49/00

CPC classification number: H01L49/003

Abstract: An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.

Abstract translation: 提供了具有平行MIT材料层的突发MIT（金属 - 绝缘体转变）器件。 突变MIT装置包括设置在基板的某个区域上的第一电极，设置成与第一电极隔开预定距离的第二电极，以及至少一个MIT材料层，电连接第一电极与第二电极 电极，并且具有允许MIT材料层的整个区域由于MIT而转变成金属层的宽度。 由于这种构造，通常由流过MIT材料层的电流引起的MIT材料层的劣化不太可能发生。

公开(公告)号：US07944360B2

公开(公告)日：2011-05-17

申请号：US12090084

申请日：2006-06-27

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Yong-Wook Lee ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Sang-Kuk Choi ,  Sun-Jin Yun

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Yong-Wook Lee ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Sang-Kuk Choi ,  Sun-Jin Yun

IPC: G08B17/00

CPC classification number: G01K3/005 ,  G01K7/22

Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.

Abstract translation: 提供了使用在特定温度下经受突然MIT的金属 - 绝缘体转变（MIT）装置的温度传感器和包括温度传感器的警报。 突变的MIT装置包括突变的MIT薄膜和至少两个接触突变的MIT薄膜的电极薄膜。 突变MIT器件在特定转变温度下产生突然的金属 - 绝缘体转变。 报警装置包括一个温度传感器，它包括一个突然的MIT装置，和一个串联连接到温度传感器的报警信号装置。 因此，通过使用突然的MIT装置包括温度传感器，可以将报警器制造成具有简单的电路并且尺寸小。

公开(公告)号：US07911756B2

公开(公告)日：2011-03-22

申请号：US11908837

申请日：2006-03-07

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Gyung-Ock Kim

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Gyung-Ock Kim

IPC: H02H9/00

CPC classification number: H01L49/003

Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.

Abstract translation: 提供了一种使用突变金属 - 绝缘体转变（MIT）装置的低电压噪声防止电路，其能够以低于额定信号电压的电压有效地去除噪声信号。 突发MIT设备串联连接到电气和/或电子系统以防止噪声信号，并且以预定电压经受突然MIT。 因此，可以有效地消除低电压噪声。

公开(公告)号：US07911125B2

公开(公告)日：2011-03-22

申请号：US12064948

申请日：2006-08-25

Applicant: Hyun-Tak Kim ,  Byung Gyu Chae ,  Kwang-Yong Kang ,  Yoon Ho Song

Inventor： Hyun-Tak Kim ,  Byung Gyu Chae ,  Kwang-Yong Kang ,  Yoon Ho Song

IPC: H01J1/62

CPC classification number: H01J31/127 ,  H01J1/316 ,  H01J2201/316 ,  H01J2201/3165 ,  H01J2329/0486 ,  H01J2329/0489

Abstract: An electron emission device having a high electron emitting rate and a display including the device are provided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.

Abstract translation: 提供具有高电子发射速率的电子发射装置和包括该装置的显示器。 电子发射器件采用突发金属 - 绝缘体转换，器件包括：板; 金属 - 绝缘体转变（MIT）材料层，设置在所述板上并与所分割的MIT材料层的彼此面对的部分分开预定的间隙; 以及连接到分割的金属 - 绝缘体转移材料层的每个部分以将电子发射到分割的金属 - 绝缘体转移材料层的部分之间的间隙的电极。

公开(公告)号：US07767501B2

公开(公告)日：2010-08-03

申请号：US11721069

申请日：2005-12-05

Applicant: Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

Inventor： Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

IPC: H01L21/335

CPC classification number: H01L49/003 ,  H01L29/452

Abstract: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.

Abstract translation: 突变金属 - 绝缘体转换装置包括：突然的金属绝缘体过渡材料层，其包括小于或等于2eV的能隙和孔内的孔; 并且两个电极接触突变的金属 - 绝缘体转移材料层。 这里，两个电极中的每一个通过热处理形成在突变金属 - 绝缘体转移材料层上并包含Ni或Cr的第一层的叠层形成，第二层形成在第一层上并包括In的第三层，第三层 形成在第二层上并且包含Mo或W，以及形成在第三层上并包含Au的第四层。

公开(公告)号：US20100157542A1

公开(公告)日：2010-06-24

申请号：US12535969

申请日：2009-08-05

Applicant: Sang Kuk CHOI ,  Hyun Tak KIM ,  Byung Gyu CHAE ,  Bong Jun KIM

Inventor： Sang Kuk CHOI ,  Hyun Tak KIM ,  Byung Gyu CHAE ,  Bong Jun KIM

IPC: H05K7/20

CPC classification number: H05K1/0201 ,  H01L2224/48091 ,  H05K1/181 ,  H05K2201/10053 ,  H05K2201/10166 ,  H05K2201/10522 ,  H01L2924/00014

Abstract: A power device package controls heat generation of a power device using a semi-permanent metal-insulator transition (MIT) device instead of a fuse, and emits heat generated by the power device through a small-sized heat sink provided only in one region on the power device, thereby ensuring excellent dissipation of heat. Therefore, the power device package can be usefully applied to any electric/electronic circuit that uses a power device.

Abstract translation: 功率器件封装使用半永久性金属 - 绝缘体转换（MIT）装置代替保险丝来控制功率器件的发热，并通过仅在一个区域上提供的小型散热器发射由功率器件产生的热量 功率器件，从而确保良好的散热。 因此，功率器件封装可以有效地应用于使用功率器件的任何电/电子电路。

公开(公告)号：US20090208639A1

公开(公告)日：2009-08-20

申请号：US12307573

申请日：2007-06-29

Applicant: Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  JungWook Lim ,  Bong-Jun Kim

Inventor： Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  JungWook Lim ,  Bong-Jun Kim

IPC: B05D5/12

CPC classification number: C01G31/02 ,  C01P2006/40 ,  H01L49/003

Abstract: Provided is a method of manufacturing a V2O3 thin film having an abrupt MIT characteristic. The method forms a thin film of one of VO2 and V3O7 on a substrate. Then the substrate on which thin film is formed is mounted in a chamber in which a reduction atmosphere capable of removing oxygen is formed, and annealed to form a V2O3 thin film having an abrupt MIT.

Abstract translation: 提供了具有突变MIT特性的V2O3薄膜的制造方法。 该方法在衬底上形成VO2和V3O7之一的薄膜。 然后将形成有薄膜的基板安装在其中形成能够除去氧的还原气氛的室中，并退火以形成具有突变MIT的V 2 O 3薄膜。

公开(公告)号：US20090091003A1

公开(公告)日：2009-04-09

申请号：US12089778

申请日：2006-10-16

Applicant: Jung Wook Lim ,  Sun Jin Yun ,  Hyun Tak Kim ,  Byung Gyu Chae ,  Bong Jun Kim ,  Kwang-Yong Kang

Inventor： Jung Wook Lim ,  Sun Jin Yun ,  Hyun Tak Kim ,  Byung Gyu Chae ,  Bong Jun Kim ,  Kwang-Yong Kang

IPC: H01L29/51 ,  B05D5/12 ,  C23C14/34 ,  H05H1/24

CPC classification number: H01B3/12 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/3162 ,  H01L49/003

Abstract: Provided are an insulator that has an energy band gap of 2 eV or more and undergoes an abrupt MIT without undergoing a structural change, a method of manufacturing the insulator, and a device using the insulator. The insulator is abruptly transitioned from an insulator phase into a metal phase by an energy change between electrons without undergoing a structural change.

Abstract translation: 提供具有2eV以上的能带隙并且经历突发MIT而不经历结构变化的绝缘体，制造绝缘体的方法以及使用该绝缘体的器件。 通过电子之间的能量变化，绝缘体从绝缘体相突然转变为金属相，而不发生结构变化。