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公开(公告)号:US5466888A
公开(公告)日:1995-11-14
申请号:US384836
申请日:1995-02-07
申请人: Lim T. Beng , Chai T. Chong , Masazumi Amagai , Ichiro Anjoh , Junichi Arita , Kunihiro Tsubosaki , Masahiro Ichitani , Darvin Edwards
发明人: Lim T. Beng , Chai T. Chong , Masazumi Amagai , Ichiro Anjoh , Junichi Arita , Kunihiro Tsubosaki , Masahiro Ichitani , Darvin Edwards
IPC分类号: H01L23/31 , H01L23/495 , H01L23/28
CPC分类号: H01L24/06 , H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L24/05 , H01L24/29 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/06136 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48647 , H01L2224/48655 , H01L2224/4866 , H01L2224/48799 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/73215 , H01L2224/83101 , H01L2224/85207 , H01L2224/85447 , H01L2224/85455 , H01L2224/8546 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/3025 , H01L2924/351
摘要: A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.
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公开(公告)号:US5406028A
公开(公告)日:1995-04-11
申请号:US198389
申请日:1994-02-18
申请人: Lim T. Beng , Chai T. Chong , Masazumi Amagai , Ichiro Anjoh , Junichi Arita , Kunihiro Tsubosaki , Masahiro Ichitani , Darvin Edwards
发明人: Lim T. Beng , Chai T. Chong , Masazumi Amagai , Ichiro Anjoh , Junichi Arita , Kunihiro Tsubosaki , Masahiro Ichitani , Darvin Edwards
IPC分类号: H01L23/31 , H01L23/495 , H01L23/28
CPC分类号: H01L24/06 , H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L24/05 , H01L24/29 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/06136 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48647 , H01L2224/48655 , H01L2224/4866 , H01L2224/48799 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/73215 , H01L2224/83101 , H01L2224/85207 , H01L2224/85447 , H01L2224/85455 , H01L2224/8546 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/3025 , H01L2924/351
摘要: A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.
摘要翻译: 封装的半导体器件具有半导体芯片和在芯片上形成的引线,其间插入有电绝缘膜,以及用于密封芯片和引线的内引线部分的封装材料。 电绝缘膜具有这样的区域:提供不被引线的内引线部分的部分覆盖的周边部分,用于加强电绝缘膜对包装材料和芯片的粘附。 电绝缘膜的厚度基本上在80μm至200μm的范围内,用于吸收当经受环境温度变化时在封装半导体器件中产生的应力。 可以在电绝缘膜和半导体芯片之间形成应力吸收膜,用于吸收当经受环境温度变化时在封装半导体器件中产生的应力。
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