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    III-NITRIDE DEVICES WITH RECESSED GATES
    1.
    发明申请
    III-NITRIDE DEVICES WITH RECESSED GATES 有权
    具有接收器门的III-NITRIDE器件

    公开(公告)号：US20100255646A1

    公开(公告)日：2010-10-07

    申请号：US12816971

    申请日：2010-06-16

    申请人： Chang Soo Suh ,  Ilan Ben-Yaacov

    发明人： Chang Soo Suh ,  Ilan Ben-Yaacov

    IPC分类号： H01L21/335

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236

    摘要： III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching through at least the top two layers in the gate region. Because adjacent layers in the top three layers of the structure have different compositions, some of the layers act as etch stops to allow for precision etching. In some embodiments, a regrowth mask is used to prevent growth of material in the gate region. A gate electrode is deposited in the recess.

    摘要翻译： III型氮化物器件用凹入栅极描述。 在一些实施例中，围绕栅极的材料通过在衬底上外延沉积不同的III族氮化物层并且蚀刻至少栅极区域中的顶部两层来形成。 因为结构的顶部三层中的相邻层具有不同的组成，所以一些层用作蚀刻停止以允许精密蚀刻。 在一些实施例中，再生长掩模用于防止栅极区域中材料的生长。 栅电极沉积在凹槽中。

    Method for Manufacturing Interior Panel of Motor Vehicle
    2.
    发明申请
    Method for Manufacturing Interior Panel of Motor Vehicle 审中-公开
    汽车内部面板制造方法

    公开(公告)号：US20100038814A1

    公开(公告)日：2010-02-18

    申请号：US12349283

    申请日：2009-01-06

    申请人： Chang Soo Suh

    发明人： Chang Soo Suh

    IPC分类号： B29C45/14

    CPC分类号： B29C45/1418 ,  B29C45/1639 ,  B29C45/1671 ,  B29C51/10 ,  B29C2045/14868 ,  B29C2045/14909 ,  B29C2791/001 ,  B29L2031/3005 ,  B29L2031/3041

    摘要： A method of manufacturing a product may include a step of forming an end of a film in a hook shape corresponding to one side cavity of an upper mold, a step of removing an unnecessary portion of the film, a step of inserting the film into the one side cavity in a state that a side having the hook shape in the film is disposed at an inner surface of the upper mold, a step of injecting injection liquid into the one side cavity in a state that the one side cavity is partitioned from the other side cavity of the upper mold, a step of injecting injection liquid into the other side cavity, a step of filling a partitioning portion formed between the one side cavity and the other side cavity to form an injection-molded body, and a step of extracting the injection-molded body.

    摘要翻译： 制造产品的方法可以包括形成与上模的一个侧腔相对应的钩形的膜的端部，除去膜的不需要部分的步骤，将膜插入到 在膜的内表面设置具有钩状的一侧的状态下的一侧空腔，在一侧空腔与上侧模具隔开的状态下将注入液注入到一侧空腔的工序 上模具的另一侧腔，将注射液注入另一侧腔的步骤，填充形成在一个侧腔和另一侧腔之间的分隔部分以形成注射成型体的步骤，以及步骤 提取注塑体。

    Apparatus for preventing vehicle tray from being opened by inertia load
    3.
    发明授权
    Apparatus for preventing vehicle tray from being opened by inertia load 失效
    用于防止车辆托盘被惯性载荷打开的装置

    公开(公告)号：US07571948B2

    公开(公告)日：2009-08-11

    申请号：US11942567

    申请日：2007-11-29

    申请人： Chang Soo Suh

    发明人： Chang Soo Suh

    IPC分类号： B60N3/12 ,  E05B15/02

    CPC分类号： B60R7/06 ,  E05B77/06 ,  E05D11/1007 ,  E05Y2900/538 ,  Y10S292/22

    摘要： An apparatus for preventing a lid from being undesirably opened. The lid is rotatably coupled to a vehicle tray. The apparatus includes a spring provided under the vehicle tray; and a stopper provided under the vehicle tray. The stopper is coupled at one end to the spring, so that, when a force greater than a predetermined force is applied to the stopper in a direction away from the spring, the stopper overcomes the elastic force of the spring and slides to a position at which it prevents the lid from opening. One-way sliding sawteeth are provided on a lower surface of the vehicle tray and on an upper surface of the stopper. The sawteeth engage with each other when the stopper slides to the position at which it prevents the lid from opening, such that the stopper is prevented from returning to its original position.

    摘要翻译： 一种用于防止盖不期望地打开的装置。 盖可旋转地联接到车辆托盘。 该装置包括设置在车辆托盘下方的弹簧; 以及设置在车辆托盘下方的止动件。 止动器的一端连接到弹簧，使得当大于预定的力的力沿着远离弹簧的方向施加到止动件上时，止动器克服弹簧的弹力并滑动到 这防止盖子打开。 单向滑动锯条设置在车辆托盘的下表面和止动件的上表面上。 当止动件滑动到防止盖打开的位置时，锯齿彼此接合，从而防止止动件返回到其初始位置。

    HIGH BREAKDOWN ENHANCEMENT MODE GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH INTEGRATED SLANT FIELD PLATE
    5.
    发明申请
    HIGH BREAKDOWN ENHANCEMENT MODE GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH INTEGRATED SLANT FIELD PLATE 审中-公开
    具有集成的SLANT现场板的高突变增强型基于氮化镓的高电子移动晶体管

    公开(公告)号：US20080308813A1

    公开(公告)日：2008-12-18

    申请号：US11841476

    申请日：2007-08-20

    申请人： Chang Soo Suh ,  Yuvaraj Dora ,  Umesh K. Mishra

    发明人： Chang Soo Suh ,  Yuvaraj Dora ,  Umesh K. Mishra

    IPC分类号： H01L29/778 ,  H01L21/338

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462

    摘要： High breakdown enhancement mode gallium nitride (GaN) based high electron mobility transistors (HEMTs) with integrated slant field plates. These HEMTs have an epilayer structure comprised of AlGaN/GaN buffer. Before the formation of the gate electrode, a passivation layer is deposited, and then the opening for the gate is patterned. The passivation layer below the gate is etched using an etch condition that creates a slanted sidewalls. Then, the charge below the channel is removed either by Fluorine-based plasma treatment and/or by a recess etch. The gate metal is deposited with an angled rotation to form a gate structure with an inherent field plate with rounded edges.

    摘要翻译： 具有集成倾斜场板的高击穿增强型氮化镓（GaN）基高电子迁移率晶体管（HEMT）。 这些HEMT具有由AlGaN / GaN缓冲层构成的外延层结构。 在形成栅电极之前，沉积钝化层，然后对栅极的开口进行图案化。 使用产生倾斜侧壁的蚀刻条件蚀刻栅极下方的钝化层。 然后，通过氟基等离子体处理和/或通过凹陷蚀刻除去通道下面的电荷。 栅极金属以成角度的旋转沉积以形成具有带有圆形边缘的固有场板的栅极结构。

    P-GaN/AlGaN/AlN/GaN ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR
    6.
    发明申请
    P-GaN/AlGaN/AlN/GaN ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR 有权
    P-GaN / AlGaN / AlN / GaN增强型场效应晶体管

    公开(公告)号：US20080296618A1

    公开(公告)日：2008-12-04

    申请号：US12131704

    申请日：2008-06-02

    申请人： Chang Soo Suh ,  Umesh K. Mishra

    发明人： Chang Soo Suh ,  Umesh K. Mishra

    IPC分类号： H01L29/778 ,  H01L21/338

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66462

    摘要： An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.

    摘要翻译： 一种增强型高电子迁移率晶体管（HEMT），其包括在HEMT的栅极和沟道之间的p型氮化物层，用于减少栅极下的电子群。 HEMT还可以在AlGaN层和HEMT的缓冲层之间包含氮化铝（AlN）层，以降低通道的导通电阻。

    Apparatus for molding a crash pad for a vehicle
    7.
    发明授权
    Apparatus for molding a crash pad for a vehicle 有权
    用于模制车辆碰撞垫的装置

    公开(公告)号：US08753101B2

    公开(公告)日：2014-06-17

    申请号：US13532416

    申请日：2012-06-25

    申请人： Chang Soo Suh ,  Jin Tae Kim

    发明人： Chang Soo Suh ,  Jin Tae Kim

    IPC分类号： B29C45/14

    CPC分类号： B29C45/14073 ,  B29C2045/14081 ,  B29C2045/14163

    摘要： Provided is an apparatus for molding a crash pad for a vehicle, which includes a first metal mold in which an insert cavity is formed, a second metal mold installed opposite the first metal mold, an insert inserted into the insert cavity and having a through-hole toward the first metal mold so as to define a boundary between an upper part and a lower part of the crash pad that is injection-molded by the first and second metal molds, and a resin introducing unit installed in the first metal mold abutting on the insert and having an elastically adjusted space into which molding resin is introduced through the through-hole when an injection pressure exceeds a predetermined level.

    摘要翻译： 提供了一种用于模制车辆碰撞垫的装置，其包括形成有插入腔的第一金属模，与第一金属模相对设置的第二金属模，插入插入腔中的插入件， 孔朝向第一金属模具，以便限定由第一和第二金属模具注射成型的防撞垫的上部和下部之间的边界，以及安装在第一金属模具中的树脂引入单元 插入物并且具有弹性调节的空间，当注射压力超过预定水平时，模制树脂通过通孔引入该空间中。