摘要:
The present invention provides a thermoplastic resin composition that can have improved scratch resistance comprising: (A) about 10 to about 20% by weight of a rubber modified aromatic vinyl graft copolymer resin; (B) about 30 to about 50% by weight of polymethylmethacrylate (PMMA) resin; and (C) about 40 to about 60% by weight of an aromatic vinyl copolymer resin including about 5 to about 50% by weight of a (meth)acrylate alkyl ester. The thermoplastic resin composition of the present invention can have a good balance of various properties such as scratch resistance, impact strength, colorability, gloss, and injection molding properties.
摘要:
A thermoplastic elastomer composition comprises (A) about 25 to about 55 parts by weight of a block terpolymer including an aromatic vinyl compound and an alkene compound; (B) about 20 to about 50 parts by weight of a paraffin oil; (C) about 5 to about 15 parts by weight of a polyolefin resin; (D) about 5 to about 20 parts by weight of an inorganic additive; and (E) about 3 to about 15 parts by weight of a polyphenylene ether. The thermoplastic elastomer composition can have excellent physical properties, such as flexibility (or resilience), surface hardness, and restoring force at high temperatures.
摘要:
Semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same are provided. The semiconductor devices include a semiconductor substrate and a lower interlayer insulating layer disposed on the semiconductor substrate. A lower semiconductor body disposed on or in the lower interlayer insulating layer. A lower TFT includes a lower source region and a lower drain region, which are disposed in the lower semiconductor body, and a lower gate electrode, which covers and crosses at least portions of at least two surfaces of the lower semiconductor body disposed between the lower source and drain regions.
摘要:
Disclosed is an electromagnetic wave EMI/RFI shielding resin composite material that includes a thermoplastic polymer resin, an electrically conductive filler having a polyhedral shape or being capable of forming a polyhedral shape, and a low-melting point metal, and a molded product made using the EMI/RFI shielding resin composite material.
摘要:
A thermal-conductive resin composition and a plastic article are provided. The thermal-conductive resin composition comprises about 30 to about 60% by weight of a thermoplastic resin and about 40 to about 70% by weight of a thermal-conductive filler comprising about 10% by weight or more of a thermal-conductive filler with a height-to-length ratio (length/height) of about 7,000 to about 40,000 and about 10% by weight or more of a thermal-conductive filler with a height-to-length ratio of about 10 to about 1,000.
摘要:
A thermoplastic elastomer composition comprises (A) about 25 to about 55 parts by weight of a block terpolymer including an aromatic vinyl compound and an alkene compound; (B) about 20 to about 50 parts by weight of a paraffin oil; (C) about 5 to about 15 parts by weight of a polyolefin resin; (D) about 5 to about 20 parts by weight of an inorganic additive; and (E) about 3 to about 15 parts by weight of a polyphenylene ether. The thermoplastic elastomer composition can have excellent physical properties, such as flexibility (or resilience), surface hardness, and restoring force at high temperatures.
摘要:
An electrically insulating highly thermally conductive resin composition includes (A) 100 parts by weight of a polyamide-based resin, and (B) 10 to 80 parts by weight of a long metal fiber including a metal comprising copper, nickel, aluminum, iron, chromium, molybdenum, an alloys thereof, or a combination thereof. The electrically insulating highly thermally conductive resin composition can exhibit high hardness and high strength as well as excellent electrically insulating and thermal conductivity properties, and can be useful for various molded products requiring high thermal conductivity and excellent mechanical characteristics.
摘要:
A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line. A metal node plug may be disposed within the intermediate insulating layer and the lower insulating layer to contact the source region of the upper channel body pattern. Example embodiments also relate to a method of fabricating the above semiconductor device.
摘要:
A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line. A metal node plug may be disposed within the intermediate insulating layer and the lower insulating layer to contact the source region of the upper channel body pattern. Example embodiments also relate to a method of fabricating the above semiconductor device.
摘要:
Disclosed is a flame retardant thermoplastic resin composition that includes about 100 parts by weight of a mixed resin (A) including about 10 to about 90 wt % of an aromatic polyamide resin (A-1) and about 10 to about 90 wt % of a polyphenylene sulfide resin (A-2), about 0.5 to about 30 parts by weight of a phosphinic acid metal salt flame retardant (B), and about 10 to about 100 parts by weight of a filler (C).