ORGANIC LIGHT EMITTING DISPLAY DEVICE
    2.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY DEVICE 有权
    有机发光显示装置

    公开(公告)号:US20120097954A1

    公开(公告)日:2012-04-26

    申请号:US13152738

    申请日:2011-06-03

    CPC classification number: H01L27/3258 H01L27/3213

    Abstract: The present invention further relates to an OLED device, including R, G, B, and W subpixels. Specifically, the OLED device comprises a substrate; a thin film transistor (TFT) active layer disposed on the substrate, comprising a gate electrode, a gate insulating layer, an active layer, an interlayer insulating layer, a source electrode, and a drain electrode; an overcoat layer disposed over the thin film transistor; and a passivation layer disposed between the thin film transistor and the overcoat layer, wherein the passivation layer is absent in a path of a light or wherein the passivation layer is disposed in the path of the light as a single layer comprising silicon nitride.

    Abstract translation: 本发明还涉及一种包括R,G,B和W子像素的OLED器件。 具体地,OLED器件包括衬底; 设置在所述基板上的薄膜晶体管(TFT)有源层,包括栅电极,栅绝缘层,有源层,层间绝缘层,源电极和漏电极; 设置在所述薄膜晶体管上的外涂层; 以及设置在薄膜晶体管和外涂层之间的钝化层,其中钝化层在光路中不存在,或者其中钝化层设置在作为包含氮化硅的单层的光的路径中。

    Top emission type organic electro luminescence device and fabrication method thereof
    3.
    发明授权
    Top emission type organic electro luminescence device and fabrication method thereof 有权
    顶发射型有机电致发光器件及其制造方法

    公开(公告)号:US07928651B2

    公开(公告)日:2011-04-19

    申请号:US11169751

    申请日:2005-06-30

    CPC classification number: H01L51/5284 H01L27/3244 H01L2251/5315

    Abstract: An organic electro luminescence device is provided. First and second substrates are arranged to face each other. A thin film transistor (TFT) is formed on the first substrate in each sub-pixel. A first electrode is formed on the first substrate and connected to the TFT. An organic electro luminescent layer and a second electrode are formed on the first electrode. A black matrix is disposed below the first electrode.

    Abstract translation: 提供有机电致发光器件。 第一和第二基板被布置为彼此面对。 在每个子像素中的第一衬底上形成薄膜晶体管(TFT)。 第一电极形成在第一基板上并连接到TFT。 在第一电极上形成有机电致发光层和第二电极。 黑色矩阵设置在第一电极下方。

    Organic electroluminescent device having sloped banks and coating fabrication technique
    5.
    发明授权
    Organic electroluminescent device having sloped banks and coating fabrication technique 有权
    具有倾斜堤和涂层制造技术的有机电致发光器件

    公开(公告)号:US07365367B2

    公开(公告)日:2008-04-29

    申请号:US10651955

    申请日:2003-09-02

    Abstract: An organic electroluminescent device includes a transparent substrate having at least first, second and third pixels defined thereon, a first longitudinal bank located between the first pixel and the second pixel, a second longitudinal bank located between the second pixel and the third pixel, and an organic luminous polymer layer over the substrate and between the first longitudinal bank and the second longitudinal bank. The device also includes a transverse bank extending between the first longitudinal bank and the second longitudinal bank. Sidewalls of the longitudinal banks and the transverse bank slope outwardly. The transverse bank has a height which is less than a height of the longitudinal banks. A method of forming the device utilizes nozzle coating or ink-jet coating, and a specially configured mask for producing the banks of differing heights.

    Abstract translation: 有机电致发光器件包括透明衬底,其至少具有限定在其上的第一,第二和第三像素,位于第一像素与第二像素之间的第一纵向堤,位于第二像素与第三像素之间的第二纵向堤, 有机发光聚合物层在衬底上并且在第一纵向堤岸和第二纵向堤岸之间。 该装置还包括在第一纵向堤岸和第二纵向堤岸之间延伸的横向堤岸。 纵向堤岸和横向堤岸的侧壁向外倾斜。 横向堤坝的高度小于纵向堤岸的高度。 一种形成该装置的方法使用喷嘴涂布或喷墨涂层,以及用于产生不同高度的堤的专门配置的掩模。

    Light emitting device
    6.
    发明申请
    Light emitting device 有权
    发光装置

    公开(公告)号:US20070296671A1

    公开(公告)日:2007-12-27

    申请号:US11477794

    申请日:2006-06-30

    Abstract: Provided is a light emitting device. Particularly, the light emitting device comprises a threshold voltage compensator. The threshold voltage compensator is connected between a gate and a drain of the driving TFT and has a gate connected to a second scan line to temporarily store at the storage capacitor a gate voltage reflecting a threshold voltage of the driving TFT in response to a second scan signal supplied by a second scan line and to transmit the data signal regardless of variations in the threshold voltage of the driving TFT when the output current is supplied to the light emitting diode.

    Abstract translation: 提供了一种发光装置。 特别地,发光器件包括阈值电压补偿器。 阈值电压补偿器连接在驱动TFT的栅极和漏极之间,并且具有连接到第二扫描线的栅极,以便在存储电容器上临时存储响应于第二扫描而反映驱动TFT的阈值电压的栅极电压 信号,并且当输出电流被提供给发光二极管时,不管驱动TFT的阈值电压的变化如何,都发送数据信号。

    Liquid crystal display device and method of manufacturing thereof
    7.
    发明授权
    Liquid crystal display device and method of manufacturing thereof 失效
    液晶显示装置及其制造方法

    公开(公告)号:US07145627B2

    公开(公告)日:2006-12-05

    申请号:US11004986

    申请日:2004-12-07

    CPC classification number: G02F1/134363 G02F2001/134381

    Abstract: A liquid crystal display device according to the present invention comprises first and second substrates, a gate bus line and a transparent data bus line defining unit pixel region, a common line parallel to a gate bus line in the pixel region, a TFT at a crossing of a data bus line and the gate bus lines in the pixel region, a common electrode and a storage capacitor line in the pixel region, a gate insulator having holes on the gate bus line, the common electrode, and the storage capacitor lines, a passivation layer having holes on the gate insulator, a first alignment layer with a fixed alignment direction on the passivation layer, and a liquid crystal layer between the first and second substrates.

    Abstract translation: 根据本发明的液晶显示装置包括第一和第二基板,栅极总线和限定单位像素区域的透明数据总线线路,与像素区域中的栅极总线平行的公共线,跨越的TFT 像素区域中的数据总线和栅极总线,像素区域中的公共电极和辅助电容线,在栅极总线,公共电极和辅助电容线上具有孔的栅极绝缘体, 在栅极绝缘体上具有孔的钝化层,在钝化层上具有固定取向方向的第一取向层,以及在第一和第二基板之间的液晶层。

    Organic electroluminescent display having power line parallel to gate line and fabricating method thereof
    8.
    发明授权
    Organic electroluminescent display having power line parallel to gate line and fabricating method thereof 有权
    具有与栅极线平行的电源线的有机电致发光显示器及其制造方法

    公开(公告)号:US06781321B2

    公开(公告)日:2004-08-24

    申请号:US10331304

    申请日:2002-12-31

    CPC classification number: H01L27/3276 H01L27/3265 H01L51/0512

    Abstract: An active matrix organic electroluminescent device includes a substrate, a gate line on the substrate, a data line on the substrate, the data line crossing the gate line to define a pixel region, a first switching thin film transistor connected to the gate line and the data line, a first driving thin film transistor connected to the first switching thin film transistor, a power line connected to the first driving thin film transistor and parallel to the gate line, a capacitor electrode connected to the first driving thin film transistor and overlapping the power line, and a pixel electrode connected to the first driving thin-film transistor and covering the pixel region.

    Abstract translation: 有源矩阵有机电致发光器件包括衬底,衬底上的栅极线,衬底上的数据线,与栅极线交叉以限定像素区域的数据线,连接到栅极线的第一开关薄膜晶体管和 数据线,连接到第一开关薄膜晶体管的第一驱动薄膜晶体管,连接到第一驱动薄膜晶体管并且平行于栅极线的电源线,连接到第一驱动薄膜晶体管的电容器电极, 电源线和连接到第一驱动薄膜晶体管并覆盖像素区域的像素电极。

    Organic thin film transistor and method for manufacturing the same
    9.
    发明授权
    Organic thin film transistor and method for manufacturing the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号:US08735870B2

    公开(公告)日:2014-05-27

    申请号:US11644243

    申请日:2006-12-22

    CPC classification number: H01L51/0512 H01L51/0533 H01L51/0545 H01L51/105

    Abstract: An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

    Abstract translation: 公开了一种有机薄膜晶体管及其制造方法,其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极,形成在栅电极上的栅极绝缘层,与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极,形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层,在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。

    Thin film transistor and manufacturing method thereof
    10.
    发明授权
    Thin film transistor and manufacturing method thereof 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US08680525B2

    公开(公告)日:2014-03-25

    申请号:US11961894

    申请日:2007-12-20

    Applicant: Chang Wook Han

    Inventor: Chang Wook Han

    CPC classification number: H01L29/66765 H01L29/4908

    Abstract: A method for manufacturing a thin film transistor is provided. In the method, a gate electrode is formed on a substrate. A crystalline gate insulating layer is formed on an entire surface of the substrate having the gate electrode formed thereon. A microcrystalline silicon layer and a doped amorphous silicon layer are sequentially formed on the crystalline gate insulating layer. A metal layer is deposited on the substrate including the crystalline gate insulating layer, the microcrystalline silicon layer and the doped amorphous silicon layer. Source and drain electrodes, an ohmic contact layer and an active layer are formed by etching predetermined portions of the metal layer and the doped amorphous silicon layer to expose a predetermined portion of the microcrystalline silicon layer.

    Abstract translation: 提供了制造薄膜晶体管的方法。 在该方法中,在基板上形成栅电极。 在其上形成有栅电极的基板的整个表面上形成晶体栅极绝缘层。 在晶体栅极绝缘层上依次形成微晶硅层和掺杂非晶硅层。 在包括晶体栅极绝缘层,微晶硅层和掺杂非晶硅层的衬底上沉积金属层。 通过蚀刻金属层和掺杂非晶硅层的预定部分以暴露微晶硅层的预定部分,形成源极和漏极,欧姆接触层和有源层。

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