公开(公告)号：US08996536B2

公开(公告)日：2015-03-31

申请号：US13237844

申请日：2011-09-20

申请人： Alejandro Crosa ,  Esteban Kozak ,  Yasuhiro Matsuda ,  Xiaoyang Gu ,  Hao Yan ,  John Wang ,  Chanh Nguyen

发明人： Alejandro Crosa ,  Esteban Kozak ,  Yasuhiro Matsuda ,  Xiaoyang Gu ,  Hao Yan ,  John Wang ,  Chanh Nguyen

IPC分类号： G06F17/30

CPC分类号： G06Q50/01 ,  G06F17/30867 ,  G06Q10/00

摘要： A network update interface is presented to a user on a network to display network updates from other users of a mutual social-networking site. The network updates shared by the other users are gathered in a stream and supplied to a facet-filtering system including a network update interface. The user controls the display of certain network update items according to facet-filter characteristics enabled in facet-filter selection panels in the network update interface. The facet-filter characteristics are used by a facet filter to select certain network updates for display to the user in the network update interface. Trending links to further articles with content corresponding to the facet-filter characteristics are displayed to the user according to greatest popularity among the other users. Links to the profiles of the users sharing the articles are also provided in the network update interface.

摘要翻译： 向网络上的用户呈现网络更新界面以显示来自相互社交网站的其他用户的网络更新。 由其他用户共享的网络更新集中在一个流中，并提供给包括网络更新界面的构面过滤系统。 用户根据网络更新界面中的小平面过滤器选择面板中启用的特征滤波器特征来控制某些网络更新项目的显示。 小平面滤波器特征由小平面滤波器用于选择某些网络更新以在网络更新界面中向用户显示。 根据其他用户的最大的普及程度，向用户显示与具有相关特征的内容对应的其他文章的趋势链接。 在网络更新界面中还提供了共享文章用户的配置文件的链接。

公开(公告)号：US20100219449A1

公开(公告)日：2010-09-02

申请号：US12395528

申请日：2009-02-27

申请人： Hooman Kazemi ,  Chanh Nguyen ,  Berinder Brar

发明人： Hooman Kazemi ,  Chanh Nguyen ,  Berinder Brar

IPC分类号： H01L31/0352 ,  H01L29/205 ,  H01L21/329

CPC分类号： H01L31/065 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/108 ,  H01L31/1085 ,  Y02E10/50

摘要： The disclosure relates to a zero-bias heterojunction diode detector with varying impedance. The detector includes a substrate supporting a Schottky structure and an Ohmic contact layer. A metallic contact layer is formed over the Ohmic layer. The Schottky structure comprises a plurality of barrier layers and each of the plurality of barriers layers includes a first material and a second material. In one embodiment, the composition percentage of the second material in each of the barrier layers increases among the plurality of barrier layers from the substrate to the metal layer in order to provide a graded periodicity for the Schottky structure.

摘要翻译： 本公开涉及具有变化阻抗的零偏置异质结二极管检测器。 检测器包括支撑肖特基结构和欧姆接触层的衬底。 在欧姆层上形成金属接触层。 肖特基结构包括多个阻挡层，并且多个阻挡层中的每一个包括第一材料和第二材料。 在一个实施方案中，为了提供肖特基结构的渐变周期性，从衬底到金属层的多个阻挡层中，每个势垒层中的第二材料的组成百分比增加。

公开(公告)号：US20080054304A1

公开(公告)日：2008-03-06

申请号：US11866259

申请日：2007-10-02

申请人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

发明人： Mariam Sadaka ,  Berinder Brar ,  Wonill Ha ,  Chanh Nguyen

IPC分类号： H01L31/0328

CPC分类号： H01L29/7783 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/66462 ,  H01L29/872

摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

公开(公告)号：US06136486A

公开(公告)日：2000-10-24

申请号：US329042

申请日：1994-10-20

申请人： Khe Chanh Nguyen

发明人： Khe Chanh Nguyen

IPC分类号： C08F16/34 ,  C08F216/38 ,  C09D129/14 ,  G03G5/05 ,  G03G5/06 ,  G03G15/04 ,  C08F16/06

CPC分类号： G03G5/0542 ,  G03G5/0592

摘要： The invention is a self-cross-linked polyvinyl butyral (PVB) binder for organic photoconductors (OPC's) used in electrophotography. The no cross-linked form of the binder is available from Monsanto Co. in the U.S.A. a Butvar.TM., and from Sekisui Chemical Co. in Japan as Slek.TM.. I discovered that the PVB may be self-cross-linked by subjecting it to a thermal cure at between about 150.degree.-300.degree. C. for about 2 hours. I think other ways of cross-linking, for example, e-beam, UV or X-ray radiation, will achieve results similar to those I obtained with heat. No cross-linker, nor cross-linkable copolymer nor catalyst is required to accomplish the cross-linking. After self-cross-linking, the PV has good mechanical durability and good anti-solvent characteristics. In addition, he self-cross-linked PVB's glass transition temperature (T.sub.g) increases from about 65.degree. C. to about 170.degree. C. Also, when conventional photoconductor pigments are dispersed in the self-cross-linked PVB, they are well dispersed, and the resulting OPC's have good charge acceptance, low dark decay, and, in general, good photodischarge characteristics. Also, OPC's with the self-cross-linked PVB exhibited improved adhesion, so multi-layered OPC's made according to this invention will hav improved inter-layer bonding and longer economic lives.

摘要翻译： 本发明是用于电子照相术的有机光电导体（OPC）的自交联聚乙烯醇缩丁醛（PVB）粘合剂。 粘合剂的无交联形式可从美国的Monsanto公司获得，Butvar TM和日本的Sekisui Chemical Co.作为Slek TM得到。 我发现PVB可以通过在约150-300℃之间进行热固化约2小时而自交联。 我认为交联的其他方法，例如电子束，紫外线或X射线辐射，将获得类似于我通过热获得的结果。 不需要交联剂，也不需要可交联的共聚物或催化剂来完成交联。 自交联后，PV具有良好的机械耐久性和良好的抗溶剂特性。 此外，他自交联PVB的玻璃化转变温度（Tg）从约65℃升高至约170℃。此外，当常规光电导体颜料分散在自交联PVB中时，它们是良好分散的 ，并且所得OPC具有良好的电荷接受性，低的暗衰减，并且通常具有良好的光电放电特性。 另外，具有自交联PVB的OPC具有改进的粘合性，因此根据本发明制成的多层OPC将改善层间键合和较长的经济寿命。

公开(公告)号：US5663583A

公开(公告)日：1997-09-02

申请号：US466157

申请日：1995-06-06

申请人： Mehran Matloubian ,  Takyiu Liu ,  Chanh Nguyen

发明人： Mehran Matloubian ,  Takyiu Liu ,  Chanh Nguyen

IPC分类号： H01L21/205 ,  H01L21/338 ,  H01L29/201 ,  H01L29/778 ,  H01L29/812 ,  H01L31/0328 ,  H01L21/20

CPC分类号： H01L29/7783 ,  H01L29/201

摘要： An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer comprising a wide-gap semiconductor material having the formula Al.sub.1-y Ga.sub.y P.sub.0.71+z Sb.sub.0.29-z.

摘要翻译： 一种能够实现低噪声和功率应用的场效应晶体管的外延结构和制造方法。 优选地，外延结构包括N型阻挡层，其包含具有式Al1-yGayP0.71 + zSb0.29-z的宽间隙半导体材料。

公开(公告)号：US20070145417A1

公开(公告)日：2007-06-28

申请号：US11711340

申请日：2007-02-27

申请人： Berinder Brar ,  Wonill Ha ,  Mariam Sadaka ,  Chanh Nguyen

发明人： Berinder Brar ,  Wonill Ha ,  Mariam Sadaka ,  Chanh Nguyen

IPC分类号： H01L29/76

CPC分类号： H01L29/66462 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/7785

摘要： A semiconductor device having a lateral channel with contacts on opposing surfaces thereof. The semiconductor device includes a conductive substrate having a source contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes an isolation layer above the conductive substrate, a lateral channel above the isolation layer and a drain contact above the lateral channel. The semiconductor device further includes a gate located in a gate recess interposed between the lateral channel and the drain contact and a drain formed by at least one source/drain contact layer interposed between the lateral channel and the drain contact. The drain is offset on one side of the gate by a gate-to-drain separation distance. The semiconductor device still further includes an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the source contact and the lateral channel.

摘要翻译： 一种具有在其相对表面上具有触点的横向通道的半导体器件。 半导体器件包括具有覆盖其底表面的大部分的源极接触的导电基底。 半导体器件还包括在导电衬底之上的隔离层，隔离层上方的横向沟道和横向沟道上方的漏极接触。 所述半导体器件还包括位于所述横向沟道和所述漏极接触之间的栅极凹槽中的栅极和由介于所述侧向沟道和所述漏极接触之间的至少一个源极/漏极接触层形成的漏极。 漏极在栅极到漏极间隔距离的一侧偏移。 半导体器件还包括将横向沟道连接到导电衬底的互连，其可操作以在源极接触和侧向通道之间提供低电阻耦合。

公开(公告)号：US07170105B1

公开(公告)日：2007-01-30

申请号：US10970359

申请日：2004-10-20

申请人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

发明人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

IPC分类号： H01L29/32 ,  H01L31/0336 ,  H01L31/072 ,  H01S5/00

CPC分类号： H01L29/88 ,  H01L29/205 ,  H01L29/885

摘要： A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.

摘要翻译： 一种半导体器件，其具有与具有第一价带边缘以上的能量的第一导带边缘的第一层的带间隧穿，其差异为第一带隙。 具有第二导带边缘的第二层，其具有高于第二价带边缘的能量，所述差异为第二带隙，并且所述第二层形成为允许电子载流子隧道输送。 第二层在第一和第三层之间，第三价带边缘和第三导带边缘之间的差异是第三带隙。 费米能级比第一价带边缘更接近第一导带边缘。 第二价带边缘在第一导带边缘之下。 第二导带边缘高于第三价带边缘。 费米能级比第三导带边缘更接近第三价带边缘。

公开(公告)号：US06855948B2

公开(公告)日：2005-02-15

申请号：US10324063

申请日：2002-12-18

申请人： David Chow ,  Kenneth Elliott ,  Chanh Nguyen

发明人： David Chow ,  Kenneth Elliott ,  Chanh Nguyen

IPC分类号： H01L29/737 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/7371

摘要： A heterojunction bipolar transistor is presented, comprising a substrate having formed thereon a heterojunction bipolar transistor layer structure, and including an emitter layer. The emitter layer includes a strained, n-doped compound of indium arsenic and phosphorus. The transistor further comprises, between the substrate and emitter layer, a subcollector layer, a collector layer, a base layer, and an optional spacer layer. The emitter layer may include a graded portion. A contact layer is formed on the emitter layer to provide contacts for the device.

摘要翻译： 提出了一种异质结双极晶体管，其包括在其上形成有异质结双极晶体管层结构并且包括发射极层的衬底。 发射极层包括铟砷和磷的应变的n掺杂化合物。 晶体管还包括在衬底和发射极层之间的子集电极层，集电极层，基极层和可选的间隔层。 发射极层可以包括渐变部分。 在发射极层上形成接触层以提供器件的触点。

公开(公告)号：US07700969B1

公开(公告)日：2010-04-20

申请号：US11700442

申请日：2007-01-30

申请人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

发明人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

IPC分类号： H01L29/74 ,  H01L29/80 ,  H01S3/00

CPC分类号： H01L29/885 ,  H01L29/205

摘要： A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.

摘要翻译： 一种半导体器件，其具有与具有第一价带边缘以上的能量的第一导带边缘的第一层的带间隧穿，其差异为第一带隙。 具有第二导带边缘的第二层，其具有高于第二价带边缘的能量，所述差异为第二带隙，并且所述第二层形成为允许电子载流子隧道输送。 第二层在第一和第三层之间，第三价带边缘和第三导带边缘之间的差异是第三带隙。 费米能级比第一价带边缘更接近第一导带边缘。 第二价带边缘在第一导带边缘之下。 第二导带边缘高于第三价带边缘。 费米能级比第三导带边缘更接近第三价带边缘。

公开(公告)号：US06806512B2

公开(公告)日：2004-10-19

申请号：US10264602

申请日：2002-10-03

申请人： Chanh Nguyen ,  Daniel P. Docter

发明人： Chanh Nguyen ,  Daniel P. Docter

IPC分类号： H01L29737

CPC分类号： H01L29/66318 ,  H01L29/201 ,  H01L29/205 ,  H01L29/7371

摘要： Bipolar junction transistor (BJT) devices, particularly heterojunction bipolar transistor (HBT) devices, and methods of making same are described. A combination of InPSb and &rgr;-type InAs is used to create extremely high speed bipolar devices which, due to reduced turn-on voltages, lend themselves to circuits having drastically reduced power dissipation. The described HBTs are fabricated on InAs or GaSb substrates, and include an InPSb emitter. The base includes In and As, in the form of InAs when on an InAs substrate, and as InAsSb when on a GaSb substrate. The collector may be the same as the base to form a single heterojunction bipolar transistor (SHBT) or may be the same as the emitter to form a double heterojunction bipolar transistor (DHBT). Heterojunctions preferably include a grading layer, which may be implemented by continuously changing the bulk material composition, or by forming a chirped superlattice of alternating materials. The grading layer preferably has delta doping planes near its ends to form an electrostatic gradient offsetting the quasi-electric field variation due to the changes in material composition, whereby effective conduction band offset may be substantially eliminated to facilitate speed, and valence band offset increased proportionally to enhance gain.

摘要翻译： 描述了双极结晶体管（BJT）器件，特别是异质结双极晶体管（HBT）器件及其制造方法。 InPSb和rho型InAs的组合用于创建极高速双极器件，由于降低的导通电压，它们可以降低功耗大大降低的电路。 描述的HBT是在InAs或GaSb衬底上制造的，并包括一个InPSb发射极。 基底包括In和As，InAs在InAs衬底上，InAsSb在GaSb衬底上。 集电极可以与基极相同以形成单异质结双极晶体管（SHBT），或者可以与发射极相同以形成双异质结双极晶体管（DHBT）。 异质结优选包括可以通过连续改变散装材料组成或通过形成交替材料的啁啾超晶格来实现的分级层。 分级层优选在其端部附近具有Δ掺杂平面以形成抵消由于材料组成的变化引起的准电场变化的静电梯度，由此可以基本上消除有效导带偏移以促进速度，并且价带偏移成比例地增加 增加收益。