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公开(公告)号：US09062388B2
公开(公告)日：2015-06-23
申请号：US12859444
申请日：2010-08-19
IPC分类号： C23F1/00 , C25D17/00 , G01N27/403 , G01N27/404 , C25D17/12 , C25D21/12
CPC分类号： C25D17/007 , C25D17/12 , C25D21/12 , G01N27/403 , G01N27/404
摘要： An electroplating apparatus including a reference electrode to control the potential during an electro-deposition process. The electroplating apparatus may include a bath containing a plating electrolyte and an anode present in a first portion of the bath containing the plating electrolyte. A cathode is present in a second portion of the bath containing the plating electrolyte. A reference electrode is present at a perimeter of the cathode. The electroplating apparatus also includes a control system to bias the cathode and the anode to provide a potential. A measuring system is provided in electrical communication with the reference electrode to measure the potential of the cathode. Methods of using the above described electroplating apparatus are also provided. Structures and method for electroless deposition are also provided.
摘要翻译： 一种电镀设备，包括在电沉积过程中控制电位的参比电极。 电镀装置可以包括含有电镀电解质的浴和存在于含有电镀电解质的浴的第一部分中的阳极。 在包含电镀电解质的浴的第二部分中存在阴极。 参考电极存在于阴极的周边。 电镀设备还包括一个控制系统，用于偏压阴极和阳极以提供电位。 提供与参考电极电连通的测量系统以测量阴极的电位。 还提供了使用上述电镀设备的方法。 还提供了无电沉积的结构和方法。
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公开(公告)号：US08742578B2
公开(公告)日：2014-06-03
申请号：US13552792
申请日：2012-07-19
IPC分类号： H01L23/48
CPC分类号： H01L23/49816 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L2224/0401 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1147 , H01L2224/11849 , H01L2224/13139 , H01L2224/1403 , H01L2224/141 , H01L2224/16237 , H01L2224/81193 , H01L2224/81439 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/01074 , H01L2924/00012 , H01L2924/014 , H01L2224/81 , H01L2224/11 , H01L2224/05552
摘要： An integrated circuit (IC) chip including solder structures for connection to a package substrate, an IC chip package, and a method of forming the same are disclosed. In an embodiment, an IC chip is provided comprising a wafer having a plurality of solder structures disposed above the wafer. A ball limiting metallurgy (BLM) layer is disposed between each of the plurality of solder structures and the wafer. At least one of the plurality of solder structures has a first diameter and a first height, and at least one other solder structure has a second diameter and a second height. The differing heights and volumes of solder structures facilitate solder volume compensation for chip join improvement on the IC chip side rather than the package side.
摘要翻译： 公开了一种集成电路（IC）芯片，其包括用于连接到封装衬底的焊料结构，IC芯片封装及其形成方法。 在一个实施例中，提供一种IC芯片，其包括具有设置在晶片上方的多个焊料结构的晶片。 球限制冶金（BLM）层设置在多个焊料结构和晶片之间。 多个焊料结构中的至少一个具有第一直径和第一高度，并且至少一个其它焊料结构具有第二直径和第二高度。 焊料结构的不同高度和体积有助于在IC芯片侧而不是封装侧进行芯片连接改进的焊料体积补偿。
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公开(公告)号：US08592976B2
公开(公告)日：2013-11-26
申请号：US13615826
申请日：2012-09-14
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/94 , H01L2224/03912 , H01L2224/0401 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/1147 , H01L2224/13006 , H01L2224/13017 , H01L2224/13022 , H01L2224/13099 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/00012
摘要： A structure. The structure includes: a first dielectric layer which includes a top dielectric surface; an electrically conductive line on the first dielectric layer; a second dielectric layer on the first dielectric layer and the electrically conductive line; a ball-limiting-metallurgy (BLM) region on the second dielectric layer and the electrically conductive line such that the BLM region is electrically connected to the electrically conductive line; and a solder ball on the BLM region. The BLM region has a characteristic that a length of the longest straight line segment which is parallel to the top dielectric surface and is entirely in the BLM region does not exceed a pre-specified maximum value, wherein the pre-specified maximum value is at most one-half of a maximum horizontal dimension of the BLM region measured in a horizontal direction parallel to the top dielectric surface.
摘要翻译： 一个结构。 该结构包括：第一电介质层，其包括顶部电介质表面; 在所述第一电介质层上的导电线; 在所述第一电介质层和所述导电线上的第二电介质层; 所述第二电介质层和所述导电线上的限界冶金（BLM）区域使得所述BLM区电连接到所述导电线; 和BLM区域上的焊球。 BLM区域的特征在于，平行于顶部电介质表面并且完全在BLM区域中的最长直线段的长度不超过预定的最大值，其中预定的最大值最多为 BLM区域的最大水平尺寸的一半在平行于顶部电介质表面的水平方向上测量。
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公开(公告)号：US20130252418A1
公开(公告)日：2013-09-26
申请号：US13874509
申请日：2013-05-01
申请人： CHARLES L. ARVIN , KENNETH BIRD , CHARLES C. GOLDSMITH , SUNG K. KANG , MINHUA LU , CLARE J. MCCARTHY , ERIC D. PERFECTO , SRINIVASA S.N. REDDY , KRYSTYNA W. SEMKOW , THOMAS A. WASSICK
发明人： CHARLES L. ARVIN , KENNETH BIRD , CHARLES C. GOLDSMITH , SUNG K. KANG , MINHUA LU , CLARE J. MCCARTHY , ERIC D. PERFECTO , SRINIVASA S.N. REDDY , KRYSTYNA W. SEMKOW , THOMAS A. WASSICK
IPC分类号： H01L21/768
CPC分类号： H01L21/7685 , H01L21/321 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/742 , H01L24/81 , H01L2224/0382 , H01L2224/0401 , H01L2224/11003 , H01L2224/11005 , H01L2224/1111 , H01L2224/1131 , H01L2224/11462 , H01L2224/1147 , H01L2224/1184 , H01L2224/11849 , H01L2224/11903 , H01L2224/13017 , H01L2224/13027 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13562 , H01L2224/13566 , H01L2224/1357 , H01L2224/136 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81801 , H01L2924/181 , H01L2924/01028 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.
摘要翻译： 本发明的实施例包括无铅焊料互连结构和用于制造无铅互连结构的方法。 该结构包括具有最后金属层的半导体衬底，附着于最后金属层的铜基座，附着于铜基座的阻挡层，与阻挡层连接的阻挡保护层，以及与该阻挡层相接触的无铅焊料层 铜底座的最小一侧。
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公开(公告)号：US20130001198A1
公开(公告)日：2013-01-03
申请号：US13608386
申请日：2012-09-10
CPC分类号： C25D17/007 , C25D17/12 , C25D21/12 , G01N27/403 , G01N27/404
摘要： An electroplating apparatus including a reference electrode to control the potential during an electro-deposition process. The electroplating apparatus may include a bath containing a plating electrolyte and an anode present in a first portion of the bath containing the plating electrolyte. A cathode is present in a second portion of the bath containing the plating electrolyte. A reference electrode is present at a perimeter of the cathode. The electroplating apparatus also includes a control system to bias the cathode and the anode to provide a potential. A measuring system is provided in electrical communication with the reference electrode to measure the potential of the cathode. Methods of using the above described electroplating apparatus are also provided. Structures and method for electroless deposition are also provided.
摘要翻译： 一种电镀设备，包括在电沉积过程中控制电位的参比电极。 电镀装置可以包括含有电镀电解质的浴和存在于含有电镀电解质的浴的第一部分中的阳极。 在包含电镀电解质的浴的第二部分中存在阴极。 参考电极存在于阴极的周边。 电镀设备还包括一个控制系统，用于偏压阴极和阳极以提供电位。 提供与参考电极电连通的测量系统以测量阴极的电位。 还提供了使用上述电镀设备的方法。 还提供了无电沉积的结构和方法。
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公开(公告)号：US20120325667A1
公开(公告)日：2012-12-27
申请号：US13604666
申请日：2012-09-06
CPC分类号： C25D17/008 , C25D17/007 , C25D17/12
摘要： Disclosed are embodiments of an electroplating system and an associated electroplating method that allow for depositing of metal alloys with a uniform plate thickness and with the means to alter dynamically the alloy composition. Specifically, by using multiple anodes, each with different types of soluble metals, the system and method avoid the need for periodic plating bath replacement and also allow the ratio of metals within the deposited alloy to be selectively varied by applying different voltages to the different metals. The system and method further avoids the uneven current density and potential distribution and, thus, the non-uniform plating thicknesses exhibited by prior art methods by selectively varying the shape and placement of the anodes within the plating bath. Additionally, the system and method allows for fine tuning of the plating thickness by using electrically insulating selectively placed prescribed baffles.
摘要翻译： 公开了电镀系统和相关电镀方法的实施例，其允许沉积具有均匀板厚度的金属合金以及动态地改变合金组成的手段。 具体来说，通过使用具有不同类型的可溶性金属的多个阳极，该系统和方法避免了对周期性电镀浴更换的需要，还允许通过向不同的金属施加不同的电压来选择性地改变沉积合金中的金属比例 。 该系统和方法进一步避免了不均匀的电流密度和电势分布，并且因此通过选择性地改变阳极在电镀槽内的形状和位置，现有技术方法表现出不均匀的电镀厚度。 此外，该系统和方法允许通过使用电绝缘的选择性放置的规定的挡板来微调电镀厚度。
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公开(公告)号：US20120043217A1
公开(公告)日：2012-02-23
申请号：US12806730
申请日：2010-08-19
摘要： An electroplating/etch apparatus including a fluid jet and a dryer present over the tank containing the electrolyte for the electroplating/etch process. The fluid jet and the dryer remove excess liquids, such as electrolyte, from the component being plated or etched, e.g., working electrode. The working electrode is present on a holder that traverses from a first position within the tank during a plating or etch operation to a second position that is outside the containing the plating electrolyte. The fluid jet rinses the working electrode when the holder is in the second position, and the forced air dryer blows any remaining fluid from the fluid jet and the electrolyte from the working electrode into the tank.
摘要翻译： 一种电镀/蚀刻装置，包括存在于含有用于电镀/蚀刻工艺的电解质的罐的流体射流和干燥器。 流体射流和干燥器从被电镀或蚀刻的部件，例如工作电极上去除多余的液体，例如电解质。 工作电极存在于在电镀或蚀刻操作期间从罐中的第一位置穿过到包含电镀电解质外侧的第二位置的保持器。 当保持器处于第二位置时，流体喷射器冲洗工作电极，并且强制空气干燥器将来自流体射流和电解质的任何剩余流体从工作电极吹入罐中。
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8.发明申请公开(公告)号：US20120043216A1
公开(公告)日：2012-02-23
申请号：US12806719
申请日：2010-08-19
CPC分类号： C25D17/001 , C25D5/04 , C25D7/123 , C25D17/004 , C25D17/02 , C25D17/12
摘要： An electroplating apparatus is provided that includes a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode. In one embodiment, the thief electrode overlaps a portion of the working electrode about the perimeter of the working electrode. In one embodiment, a method is provided of using the aforementioned electroplating apparatus that provides increased uniformity in the plating thickness.
摘要翻译： 提供一种电镀设备，其包括用于容纳电镀液的镀槽。 对电极，例如阳极，存在于镀槽的第一部分中。 阴极系统存在于镀槽的第二部分中。 阴极系统包括工作电极和小偷电极。 小电极存在于工作电极和对电极之间。 防窃电极包括与电镀电解质接触的外表面，其与工作电极的电镀表面偏移。 在一个实施例中，窃电电极围绕工作电极的周边重叠一部分工作电极。 在一个实施例中，提供了使用提供镀层厚度增加的均匀性的上述电镀设备的方法。
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公开(公告)号：US20100258940A1
公开(公告)日：2010-10-14
申请号：US12547540
申请日：2009-08-26
IPC分类号： H01L23/488 , H01L21/60 , H01L21/768
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/94 , H01L2224/03912 , H01L2224/0401 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/1147 , H01L2224/13006 , H01L2224/13017 , H01L2224/13022 , H01L2224/13099 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/00012
摘要： A solder ball structure and a method for forming the same. The structure includes (i) a first dielectric layer which includes a top dielectric surface, (ii) an electrically conductive line, (iii) a second dielectric layer, (iv) a ball-limiting-metallurgy (BLM) region, and (v) a solder ball. The BLM region is electrically connected to the electrically conductive line and the solder ball. The BLM region has a characteristic that a length of the longest straight line segment which is parallel to the top dielectric surface of the first dielectric layer and is entirely in the BLM region does not exceed a pre-specified maximum value. The pre-specified maximum value is at most one-half of a maximum horizontal dimension of the BLM region measured in a horizontal direction parallel to the top dielectric surface of the first dielectric layer.
摘要翻译： 焊球结构及其形成方法。 该结构包括（i）包括顶部电介质表面的第一电介质层，（ii）导电线，（iii）第二电介质层，（iv）球限制冶金（BLM）区域和（v ）焊球。 BLM区域电连接到导电线和焊球。 BLM区域具有与第一介电层的顶部电介质表面平行且完全在BLM区域中的最长直线段的长度不超过预定的最大值的特性。 预定的最大值为平行于第一介电层的顶部电介质表面的水平方向上测量的BLM区域的最大水平尺寸的至多一半。
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10.发明申请Bump Pad Metallurgy Employing An Electrolytic Cu / Electorlytic Ni / Electrolytic Cu Stack 失效使用电解Cu /电解Ni /电解铜堆栈的Bump Pad冶金公开(公告)号：US20090174045A1
公开(公告)日：2009-07-09
申请号：US11968663
申请日：2008-01-03
IPC分类号： H01L23/495 , H01L21/44
CPC分类号： H01L23/49811 , H01L23/49827 , H01L2924/0002 , H05K3/108 , H05K3/24 , H05K3/243 , H05K3/421 , H05K3/4644 , H05K2201/0341 , H05K2201/0769 , H05K2201/09481 , H05K2201/09563 , H01L2924/00
摘要： An electroless Cu layer is formed on each side of a packaging substrate containing a core, at least one front metal interconnect layer, and at least one backside metal interconnect layer. A photoresist is applied on both electroless Cu layers and lithographically patterned. First electrolytic Cu portions are formed on exposed surfaces of the electroless Cu layers, followed by formation of electrolytic Ni portions and second electrolytic Cu portions. The electrolytic Ni portions provide enhanced resistance to electromigration, while the second electrolytic Cu portions provide an adhesion layer for a solder mask and serves as an oxidation protection layer. Some of the first electrolytic Cu may be masked by lithographic means to block formation of electrolytic Ni portions and second electrolytic Cu portions thereupon as needed. Optionally, the electrolytic Ni portions may be formed directly on electroless Cu layers.
摘要翻译： 在包含芯，至少一个前金属互连层和至少一个背侧金属互连层的封装基板的每一侧上形成化学镀铜层。 在两个无电镀铜层上涂布光致抗蚀剂，并用光刻图案化。 第一电解Cu部分形成在无电解Cu层的暴露表面上，随后形成电解Ni部分和第二电解Cu部分。 电解Ni部分提供增强的电迁移阻力，而第二电解Cu部分提供用于焊接掩模的粘附层并且用作氧化保护层。 一些第一电解铜可以被光刻装置掩盖，以根据需要阻挡电解Ni部分和第二电解Cu部分的形成。 任选地，电解Ni部分可以直接形成在无电镀Cu层上。
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