摘要:
A touch sensitive device is provided. The device includes a substrate; a plurality of first electrodes formed on the substrate and arranged along a first direction without overlapping one another; a first insulating layer formed on the substrate and covering the plurality of first electrodes; and a plurality of second electrodes formed on the first insulating layer and arranged along a second direction without overlapping one another, wherein the first direction is vertical to the second direction.
摘要:
A thermal sensitive display is disclosed, including a substrate, a first electrode and a second electrode perpendicular with each other over the substrate, a electric heat converting layer between the first electrode and the second electrode, and a heat induced color changing layer, heated by the electric heat converting layer to display pictures.
摘要:
A structure of semiconductor device including an insulation substrate is provided. A channel layer is disposed on the insulation substrate. A plurality of doped layers is disposed on the insulation substrate, and protrudes from the channel layer. The doped layers form at least two source/drain electrode (S/D electrode) pairs, and each of the S/D electrode pairs has a different extension direction with respect to the channel layer. A gate dielectric layer is disposed on the channel layer. A gate layer is disposed on the gate dielectric layer. Preferably, for example, the extension direction of at least one of the S/D electrode pairs is a first direction, and the extension direction of at least another one of the S/D electrode pairs is a second direction.
摘要:
This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.
摘要:
A semiconductor device with transistors and a fabricating method therefore are provided. The electrodes of the transistors are formed on the same layer, and they are coupled to one another by a conductor layer. Therefore, the requirement for the vias in whole circuit is reduced, and the cost is decreased.
摘要:
This invention provides a digital television camera processing system and method for feature processing quantized image signals. A single frame memory is required since the frame memory is located prior to the luminance signal processing circuit and the chroma signal processing circuit. The signal processor provides full screen zoom, partial screen zoom, still picture function, mosaic function, and a combination of these functions. Selection of the function is accomplished with inputs to a memory timing control which controls the output sequencing of the frame memory.
摘要:
A projected capacitive touch device, a projected capacitive touch panel and touch control methods thereof are disclosed. The touching control method includes mixing a detecting signal and a feedback driving signal to generate a sending signal; transmitting the sending signal to at least one touch sensing unit of the projected capacitive touch panel, wherein an electrical field is generated on the touch sensing unit according to the feedback driving signal so that a feedback tactile sense according to the electrical field can be obtained by a user while touching the touch sensing unit.
摘要:
An active photosensing pixel is disclosed, in which a two-terminal photosensing transistor has a first terminal coupled to a first node, a second terminal coupled to a selection line and a control terminal connected to the second terminal. A driving transistor has a first terminal coupled to a first reference voltage, a second terminal coupled to an output line and a control terminal connected to the first node. A reset capacitor has a first terminal connected to the control terminal of the two-terminal photosensing transistor, and a second terminal connected to the first node.
摘要:
A sensing device for sensing a force is provided. The sensing device includes a soft laminose dielectric structure, a first electrode, a second electrode, at least one third electrode and a measuring element. The soft laminose dielectric structure has a first surface and a second surface opposite to each other. The first electrode is disposed on the first surface. The second electrode is disposed on the second surface. The whole of the second electrode overlaps with the first electrode. The third electrode is disposed on the second surface. The third electrode partially overlaps with the first electrode. The measuring element is used for measuring the electronic characteristic between the first electrode and the second electrode, and for measuring the electronic characteristic between the first electrode and the third electrode.
摘要:
A photosensitive circuit is provided. The photosensitive circuit is adapted to a pixel in a pixel array. The photosensitive circuit includes a display element for generating light, transmitting light, or reflecting light, a control circuit coupled to the display element for controlling light intensity of the display element according to a data line and a gate line, and a photosensitive element coupled between the gate line and a read line for generating current at the read line to sense the position of an object according to a reflected light or a shadow from ambient light when light from the display element is reflected by an object or ambient light is shadowed by the object. The control terminal of the photosensitive element is connected to another gate line.