公开(公告)号：US08823118B2

公开(公告)日：2014-09-02

申请号：US13344292

申请日：2012-01-05

申请人： Cheng T Horng ,  Ru-Ying Tong

发明人： Cheng T Horng ,  Ru-Ying Tong

IPC分类号： H01L29/82 ,  H01L21/8246 ,  B82Y99/00

CPC分类号： H01L43/12 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/228 ,  H01L43/08

摘要： A STT-RAM MTJ is disclosed with a composite tunnel barrier comprised of a CoMgO layer that contacts a pinned layer and a MgO layer which contacts a free layer. A CoMg layer with a Co content between 20 and 40 atomic % is deposited on the pinned layer and is then oxidized to produce Co nanoconstrictions within a MgO insulator matrix. The nanoconstrictions control electromigration of Co into an adjoining MgO layer. The free layer may comprise a nanocurrent channel (NCC) layer such as FeSiO or a moment dilution layer such as Ta between two ferromagnetic layers. Furthermore, a second CoMgO layer or a CoMgO/MgO composite may serve as a perpendicular Hk enhancing layer formed between the free layer and a cap layer. One or both of the pinned layer and free layer may exhibit in-plane anisotropy or perpendicular magnetic anisotropy.

摘要翻译： 公开了具有由接触被钉扎层的CoMgO层和接触自由层的MgO层组成的复合隧道势垒的STT-RAM MTJ。 将钴含量为20至40原子％的CoMg层沉积在钉扎层上，然后被氧化以在MgO绝缘体基体内产生Co纳米收缩。 纳米监测将Co的电迁移控制到相邻的MgO层中。 自由层可以包括纳米电流通道（NCC）层，例如FeSiO或在两个铁磁层之间的诸如Ta之间的力矩稀释层。 此外，第二CoMgO层或CoMgO / MgO复合物可以用作在自由层和盖层之间形成的垂直Hk增强层。 被钉扎层和自由层中的一个或两个可以表现出面内各向异性或垂直磁各向异性。

公开(公告)号：US08404367B2

公开(公告)日：2013-03-26

申请号：US13317484

申请日：2011-10-19

申请人： Cheng T. Horng ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11B5/39

CPC分类号： G01R33/098 ,  G01R33/1284 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1136 ,  Y10T428/1143

摘要： A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.

摘要翻译： 公开了在STT-RAM器件中实现高dR / R的同时使自旋迁移磁化开关电流（Jc）最小化的双自旋滤波器。 底部自旋阀具有通过自然氧化工艺形成的MgO隧道阻挡层，以实现低RA，CoFe / Ru / CoFeB-CoFe钉扎层和具有中等纳米通道（NCC）的CoFeB / FeSiO / CoFeB复合材料自由层， 层以最小化Jc0。 NCC层可以是其中导电M（Si）晶粒与相邻铁磁层磁耦合并且形成在氧化物，氮化物或氧氮化物绝缘体基体中的复合材料。 上自旋阀具有Cu间隔物以降低自由层阻尼常数。 使用360℃的高退火温度将MR比提高到100％以上。 基于具有类似的MgO隧道势垒和复合自由层的MTJ的准静态测量，预期小于1×106A / cm 2的Jc0。

公开(公告)号：US08378330B2

公开(公告)日：2013-02-19

申请号：US12584190

申请日：2009-09-01

申请人： Cheng T. Horng ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： H01L43/00

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/302 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle layer, and a Ru outer layer on the Ta layer. For example, a low magnetization NiFeHf layer is achieved by co-sputtering NiFe and Hf targets with a forward power of 400 W and 200 W, respectively. A higher Hf content increases the oxygen gettering power of the NiFeHf layer and the thickness is modified to change dR/R, RA, and magnetostriction values. A so-called dead layer between the free layer and capping layer is restored by incorporating a NiFeHf layer on the free layer to improve lattice matching. The Fe content in the NiFe target used to make the NiFeHf layer is preferably the same as in the NiFe free layer.

公开(公告)号：US20120135273A1

公开(公告)日：2012-05-31

申请号：US12927939

申请日：2010-11-30

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Guenole Jan

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Guenole Jan

IPC分类号： G11B5/706 ,  B05D5/00 ,  C23C14/34

CPC分类号： C23C14/3414 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114

摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.

摘要翻译： 公开了具有通过自然氧化工艺形成的MgO隧道势垒的STT-RAM MTJ。 使用NCO是由Fe（20％） - SiO 2制成的纳米电流通道层的Co10Fe70B20 / NCC / Co10Fe70B20，Co10Fe70B20 / NCC / Co10Fe70B20 / NCC或Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20自由层配置，以使Jc0最小化 实现满足64Mb设计要求的更高的热稳定性，写电压，读电压，Ho和Hc值。 NCC层的厚度约为10埃，以符合最小Fe（Si）晶粒直径尺寸。 MTJ在约330℃的温度下退火，以保持高的磁阻比，同时使自由层的Hk⊥（界面）最大化，从而降低Heff并降低开关电流。 Co10Fe70B20层用低压工艺溅射沉积，功率约为15瓦，Ar流速为40标准立方厘米每分钟，以降低自由层的Heff。

公开(公告)号：US08057925B2

公开(公告)日：2011-11-15

申请号：US12079445

申请日：2008-03-27

申请人： Cheng T. Horng ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11B5/39

CPC分类号： G01R33/098 ,  G01R33/1284 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1136 ,  Y10T428/1143

摘要： A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.

摘要翻译： 公开了在STT-RAM器件中实现高dR / R的同时使自旋迁移磁化开关电流（Jc）最小化的双自旋滤波器。 底部自旋阀具有通过自然氧化工艺形成的MgO隧道阻挡层，以实现低RA，CoFe / Ru / CoFeB-CoFe钉扎层和具有中等纳米通道（NCC）的CoFeB / FeSiO / CoFeB复合材料自由层， 层以最小化Jc0。 NCC层可以是其中导电M（Si）晶粒与相邻铁磁层磁耦合并且形成在氧化物，氮化物或氧氮化物绝缘体基体中的复合材料。 上自旋阀具有Cu间隔物以降低自由层阻尼常数。 使用360℃的高退火温度将MR比提高到100％以上。 基于具有类似的MgO隧道势垒和复合自由层的MTJ的准静态测量，预期小于1×106A / cm 2的Jc0。

公开(公告)号：US20100258888A1

公开(公告)日：2010-10-14

申请号：US12803189

申请日：2010-06-21

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

摘要： An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

摘要翻译： 利用转移自旋角动量作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元。 该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。 分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

公开(公告)号：US20100065935A1

公开(公告)日：2010-03-18

申请号：US12284066

申请日：2008-09-18

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.

摘要翻译： 公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。 通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层 。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

公开(公告)号：US20090325319A1

公开(公告)日：2009-12-31

申请号：US12584190

申请日：2009-09-01

申请人： Cheng T. Horng ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： H01L21/8246

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/302 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle layer, and a Ru outer layer on the Ta layer. For example, a low magnetization NiFeHf layer is achieved by co-sputtering NiFe and Hf targets with a forward power of 400 W and 200 W, respectively. A higher Hf content increases the oxygen gettering power of the NiFeHf layer and the thickness is modified to change dR/R, RA, and magnetostriction values. A so-called dead layer between the free layer and capping layer is restored by incorporating a NiFeHf layer on the free layer to improve lattice matching. The Fe content in the NiFe target used to make the NiFeHf layer is preferably the same as in the NiFe free layer.

摘要翻译： 公开了一种MRAM阵列或TMR读取头中的MTJ，其中低磁化覆盖层是在NiFe或CoFeB / NiFe自由层，Ta中间层和Ru外层上形成的NiFeHf内层的复合物 Ta层。 例如，通过共溅射分别为400W和200W的正向功率的NiFe和Hf靶来实现低磁化NiFeHf层。 较高的Hf含量增加了NiFeHf层的吸氧能力，并且改变了厚度以改变dR / R，RA和磁致伸缩值。 通过在自由层上并入NiFeHf层来恢复自由层和覆盖层之间的所谓死层，以改善晶格匹配。 用于制造NiFeHf层的NiFe靶中的Fe含量优选与NiFe自由层相同。

公开(公告)号：US07564660B2

公开(公告)日：2009-07-21

申请号：US11804241

申请日：2007-05-17

申请人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

发明人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

公开(公告)号：US20090027810A1

公开(公告)日：2009-01-29

申请号：US11880583

申请日：2007-07-23

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

摘要： We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

摘要翻译： 我们描述形成使用自旋角动量转移的STT-MTJ MRAM单元的结构和方法，作为改变自由层的磁矩方向的机制。 该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。 分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。