公开(公告)号：US08450049B2

公开(公告)日：2013-05-28

申请号：US13024992

申请日：2011-02-10

申请人： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Cheng-Hung Shih ,  Lung-Hua Ho

发明人： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Cheng-Hung Shih ,  Lung-Hua Ho

IPC分类号： G03F7/26

CPC分类号： H01L21/4853 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05671 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11903 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/01074 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

摘要： A process for forming an anti-oxidant metal layer on an electronic device comprises the steps of providing a substrate; forming a conductive metal layer on the substrate; forming a first photoresist layer on the conductive metal layer; patterning the first photoresist layer to form apertures and first grooves; forming a connecting member having a top surface and a lateral surface in the aperture and the first groove; removing the first photoresist layer to reveal the top surface and the lateral surface; forming a second photoresist layer on the conductive metal layer; patterning the second photoresist layer to form apertures and second grooves; forming an anti-oxidant metal layer in aperture and second groove, the anti-oxidant metal layer covers the top surface and the lateral surface of the connecting member; and removing the second photoresist layer to reveal the anti-oxidant metal layer and the conductive metal layer.

摘要翻译： 在电子器件上形成抗氧化金属层的方法包括以下步骤：提供衬底; 在所述基板上形成导电金属层; 在所述导电金属层上形成第一光致抗蚀剂层; 图案化第一光致抗蚀剂层以形成孔和第一凹槽; 形成在孔和第一凹槽中具有顶表面和侧表面的连接构件; 去除第一光致抗蚀剂层以露出顶表面和侧表面; 在所述导电金属层上形成第二光致抗蚀剂层; 图案化第二光致抗蚀剂层以形成孔和第二凹槽; 在孔和第二槽中形成抗氧化金属层，抗氧化金属层覆盖连接构件的顶表面和侧表面; 并除去第二光致抗蚀剂层以露出抗氧化金属层和导电金属层。

公开(公告)号：US20120208129A1

公开(公告)日：2012-08-16

申请号：US13024992

申请日：2011-02-10

申请人： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Cheng-Hung Shih ,  Lung-Hua Ho

发明人： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Cheng-Hung Shih ,  Lung-Hua Ho

IPC分类号： G03F7/20

CPC分类号： H01L21/4853 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05671 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11903 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/01074 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

摘要： A process for forming an anti-oxidant metal layer on an electronic device comprises the steps of providing a substrate; forming a conductive metal layer on the substrate; forming a first photoresist layer on the conductive metal layer; patterning the first photoresist layer to form apertures and first grooves; forming a connecting member having a top surface and a lateral surface in the aperture and the first groove; removing the first photoresist layer to reveal the top surface and the lateral surface; forming a second photoresist layer on the conductive metal layer; patterning the second photoresist layer to form apertures and second grooves; forming an anti-oxidant metal layer in aperture and second groove, the anti-oxidant metal layer covers the top surface and the lateral surface of the connecting member; and removing the second photoresist layer to reveal the anti-oxidant metal layer and the conductive metal layer.

摘要翻译： 在电子器件上形成抗氧化金属层的方法包括以下步骤：提供衬底; 在所述基板上形成导电金属层; 在所述导电金属层上形成第一光致抗蚀剂层; 图案化第一光致抗蚀剂层以形成孔和第一凹槽; 形成在孔和第一凹槽中具有顶表面和侧表面的连接构件; 去除第一光致抗蚀剂层以露出顶表面和侧表面; 在所述导电金属层上形成第二光致抗蚀剂层; 图案化第二光致抗蚀剂层以形成孔和第二凹槽; 在孔和第二槽中形成抗氧化金属层，抗氧化金属层覆盖连接构件的顶表面和侧表面; 并除去第二光致抗蚀剂层以露出抗氧化金属层和导电金属层。

公开(公告)号：US08783897B2

公开(公告)日：2014-07-22

申请号：US13064367

申请日：2011-03-22

申请人： Cheng-Hung Shih

发明人： Cheng-Hung Shih

IPC分类号： F21V23/02 ,  F21V19/00 ,  F21V15/01 ,  H01R33/94

CPC分类号： H01R33/942

摘要： A lamp module includes an external elongated housing made of at least one of a transparent and a translucent material; a lamp terminal with lamp pins at each end of the elongated housing, at least one cold cathode fluorescent lamp (CCFL) disposed in the external elongated housing a reflective layer disposed in the external lamp elongated housing, and an electronic connector adapter having a plurality of contact pins at one end and a plurality of connecting jacks at an opposite end for receiving the lamp pins of one of the lamp terminals.

摘要翻译： 灯模块包括由透明和半透明材料中的至少一种制成的外部细长壳体; 在所述细长壳体的每个端部处具有灯销的灯端子，设置在所述外部细长壳体中的至少一个冷阴极荧光灯（CCFL），设置在所述外部灯细长壳体中的反射层，以及具有多个 在一端的接触针和在相对端的多个连接插座，用于接收一个灯端子的灯管。

公开(公告)号：US20130187265A1

公开(公告)日：2013-07-25

申请号：US13353380

申请日：2012-01-19

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Yung-Wei Hsieh ,  Jun-Yu Yeh

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Yung-Wei Hsieh ,  Jun-Yu Yeh

IPC分类号： H01L23/485

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L23/3171 ,  H01L23/49811 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/10156 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1369 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor structure comprises a carrier, a plurality of under bump metallurgy layers, a plurality of copper containing bumps and an organic barrier layer, wherein the carrier comprises a protective layer and a plurality of conductive pads, mentioned protective layer comprises a plurality of openings, the conductive pads exposed by the openings, mentioned under bump metallurgy layers being formed on the conductive pads, mentioned copper containing bumps being formed on the under bump metallurgy layers, each of the copper containing bumps comprises a top surface and a ring surface in connection with the top surface, mentioned organic barrier layer having a first coverage portion, and mentioned first coverage portion covers the top surface and the ring surface of each of the copper containing bumps.

摘要翻译： 半导体结构包括载体，多个凸块下金属层，多个含铜凸起和有机阻挡层，其中所述载体包括保护层和多个导电焊盘，所述保护层包括多个开口， 通过开口暴露的导电焊盘，所述凹凸不平的冶金层形成在导电焊盘上，所述含铜凸起形成在凸块下的冶金层上，每个含铜凸块包括顶表面和与 具有第一覆盖部分的上表面的有机阻挡层和所述第一覆盖部分覆盖每个含铜凸块的顶表面和环表面。

公开(公告)号：US20120243218A1

公开(公告)日：2012-09-27

申请号：US13064367

申请日：2011-03-22

申请人： Cheng-Hung Shih

发明人： Cheng-Hung Shih

IPC分类号： F21S4/00 ,  F21V5/00 ,  H01R31/06

CPC分类号： H01R33/942

摘要： A lamp module, connected to lamp cartridge adapter, the lamp module comprising: an external lamp, having at least one of a light-permeable material and a translucent material; two lamp heads, configuring to two terminal of the external lamp, and each lamp head has a plurality of lamp pin; at least one cold cathode fluorescent lamp (CCFL) disposed in the external lamp; and a reflective layer, dispose in the external lamp, the reflective layer having a reflective surface adjacent to and contactless to cold cathode fluorescent lamp.

摘要翻译： 一种连接到灯盒适配器的灯模块，所述灯模块包括：具有透光材料和半透明材料中的至少一种的外部灯; 两个灯头，配置到外部灯的两个端子，并且每个灯头具有多个灯销; 设置在外部灯中的至少一个冷阴极荧光灯（CCFL）; 和反射层，配置在外部灯中，反射层具有与冷阴极荧光灯相邻并且不接触的反射表面。

公开(公告)号：US20140098503A1

公开(公告)日：2014-04-10

申请号：US13684174

申请日：2012-11-22

申请人： Mao-Sheng Huang ,  Cheng-Hung Shih

发明人： Mao-Sheng Huang ,  Cheng-Hung Shih

IPC分类号： H05K9/00 ,  H05K5/02

CPC分类号： H05K9/0067 ,  H01H2239/008 ,  H05K5/02

摘要： An electronic device includes a casing, a circuit board, an electronic component and a plurality of conductive elements. The circuit board is disposed in the casing. The electronic component is disposed on the circuit board and has a shielding surface and an electronic components body, in which the shielding surface and the casing together form a common casing surface, and there is a slit between the shielding surface and the casing. The conductive elements are disposed on the circuit board and grounded, in which the center position of each of the conductive elements and the edge of the shielding surface overlap each other, and the distance between the edge of the shielding surface and the conductive element is less than the distance between the edge of the shielding surface and the electronic component main body to evacuate static electricity around the electronic component.

摘要翻译： 电子设备包括壳体，电路板，电子部件和多个导电元件。 电路板设置在壳体中。 电子部件设置在电路板上，具有屏蔽面和电子部件主体，其中屏蔽面和壳体一起形成共同的壳体表面，并且在屏蔽表面和外壳之间存在狭缝。 导电元件设置在电路板上并接地，其中每个导电元件的中心位置和屏蔽表面的边缘彼此重叠，并且屏蔽表面的边缘与导电元件之间的距离较小 比屏蔽表面的边缘与电子部件主体之间的距离大一些，以排出电子部件周围的静电。

公开(公告)号：US20130214419A1

公开(公告)日：2013-08-22

申请号：US13398059

申请日：2012-02-16

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Ming-Yi Liu

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Ming-Yi Liu

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/293 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83104 ,  H01L2224/8392 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2924/01079

摘要： A semiconductor packaging method includes providing a substrate having a plurality of connection pads; mounting a chip on the substrate, wherein the chip comprises a plurality of copper-containing bumps directly coupled to the connection pads, and each of the copper-containing bumps comprises a ring surface; forming an anti-dissociation gel between the substrate and the chip, wherein the anti-dissociation gel comprises a plurality of anti-dissociation substances, and the ring surfaces of the copper-containing bumps are covered by the anti-dissociation substances.

摘要翻译： 半导体封装方法包括提供具有多个连接焊盘的衬底; 将芯片安装在所述基板上，其中所述芯片包括直接耦合到所述连接焊盘的多个含铜凸块，并且所述含铜凸块包括环表面; 在所述基板和所述芯片之间形成抗分解凝胶，其中所述抗分解凝胶包含多个抗分解物质，并且所述含铜凸起的环表面被所述抗分解物质覆盖。

公开(公告)号：US08497579B1

公开(公告)日：2013-07-30

申请号：US13398081

申请日：2012-02-16

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Bo-Shiun Jiang

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Bo-Shiun Jiang

IPC分类号： H01L23/48

CPC分类号： H01L21/50 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2224/9211 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

摘要： A semiconductor packaging method includes providing a substrate having a plurality of pads, each of the pads comprises a first coupling surface having a plurality of first conductive contact areas and a plurality of first non-conductive contact areas; forming a conductible gel with anti-dissociation function on the substrate, said conductible gel includes a plurality of conductive particles and a plurality of anti-dissociation substances; mounting a chip on the substrate, said chip comprises a plurality of copper-containing bumps, each of the copper-containing bumps comprises a ring surface and a second coupling surface having a plurality of second conductive contact areas and a plurality of second non-conductive contact areas, wherein the conductive particles are electrically connected with the first conductive contact areas and the second conductive contact areas, said anti-dissociation substances are in contact with the second non-conductive contact area, and the ring surfaces are covered with the anti-dissociation substances.

摘要翻译： 半导体封装方法包括提供具有多个焊盘的衬底，每个焊盘包括具有多个第一导电接触区域和多个第一非导电接触区域的第一耦合表面; 在基板上形成具有抗解离功能的导电凝胶，所述可导电凝胶包括多个导电颗粒和多个抗分解物质; 将芯片安装在基板上，所述芯片包括多个含铜凸块，每个含铜凸块包括环表面和具有多个第二导电接触区域和多个第二非导电性接触区域的第二耦合表面 接触区域，其中所述导电颗粒与所述第一导电接触区域和所述第二导电接触区域电连接，所述抗分解物质与所述第二非导电接触区域接触，并且所述环形表面被所述反 - 解离物质

公开(公告)号：US08475939B2

公开(公告)日：2013-07-02

申请号：US12985678

申请日：2011-01-06

申请人： Chien-Hong Cheng ,  Cheng-An Wu ,  Fang-Iy Wu ,  Cheng-Hung Shih

发明人： Chien-Hong Cheng ,  Cheng-An Wu ,  Fang-Iy Wu ,  Cheng-Hung Shih

IPC分类号： H01L51/54

CPC分类号： H01L51/5275 ,  C07D249/08 ,  C07D271/107 ,  H01L51/5253

摘要： An m-terphenyl derivative has a structure of formula (I) or (II): wherein A and B are five-membered heterocyclic compounds selected from the group consisting of pyrrole, pyrazole, imidazole, 1,2,3-triazole, 1,2,4-triazole, 1,2,3,4-tetrazole, 1,2-thiazole, 1,3-thiazole and 1,3,4-thiadiazole, each of substituents R, R1 and R2 is a member independently selected from the group consisting of H, halo, cyano, trifluoromethyl, amino, C1-C10 alkyl, C2-C10 alkenyl, C2-C10 alkynyl, C3-C20 cycloalkyl, C3-C20 cycloalkenyl, C1-C20 heterocycloalkyl, C1-C20 heterocycloalkenyl, aryl and heteroaryl. The compound of the present invention may have advantages in good electron affinity, low HOMO and thereby achieving hole blocking and may be used for electron transport material and/or electron injection material.

摘要翻译： 间三联苯衍生物具有式（I）或（II）的结构：其中A和B是五元杂环化合物，其选自吡咯，吡唑，咪唑，1,2,3-三唑， 2,4-三唑，1,2,3,4-四唑，1,2-噻唑，1,3-噻唑和1,3,4-噻二唑，取代基R，R 1和R 2各自独立地选自 由H，卤素，氰基，三氟甲基，氨基，C 1 -C 10烷基，C 2 -C 10烯基，C 2 -C 10炔基，C 3 -C 20环烷基，C 3 -C 20环烯基，C 1 -C 20杂环烷基，C 1 -C 20杂环烯基，芳基 和杂芳基。 本发明的化合物可具有良好的电子亲和力，低HOMO的优点，从而实现空穴阻挡，并可用于电子传输材料和/或电子注入材料。

公开(公告)号：US08437142B2

公开(公告)日：2013-05-07

申请号：US13163870

申请日：2011-06-20

申请人： Cheng-Hung Shih ,  Shyh-Jen Guo ,  Wen-Tung Chen

发明人： Cheng-Hung Shih ,  Shyh-Jen Guo ,  Wen-Tung Chen

IPC分类号： H05K7/00

CPC分类号： H05K3/4007 ,  H05K3/244 ,  H05K2201/09745 ,  H05K2201/099

摘要： A bump structure comprises a first polymer block, a second polymer block, a first groove, an under bump metallurgy layer and a connection metal layer, wherein the first polymer block and the second polymer block are individual blocks. The first polymer block comprises a first connection slot, and the second polymer block comprises a second connection slot communicated with the first groove and the first connection slot. The under bump metallurgy layer covers the first polymer block and the second polymer block to form a second groove. The connection metal layer covers the under bump metallurgy layer to form a third groove, wherein the under bump metallurgy layer covers a first coverage area of the first polymer block and a second coverage area of the second polymer block and reveals a first exposure area of the first polymer block and a second exposure area of the second polymer block.

摘要翻译： 凸块结构包括第一聚合物嵌段，第二聚合物嵌段，第一凹槽，凸块下金属层和连接金属层，其中第一聚合物嵌段和第二聚合物嵌段是各自的嵌段。 第一聚合物块包括第一连接槽，第二聚合物块包括与第一槽和第一连接槽连通的第二连接槽。 凸块下金属层覆盖第一聚合物嵌段和第二聚合物嵌段以形成第二凹槽。 所述连接金属层覆盖所述凸块下金属层以形成第三凹槽，其中所述凸块下金属层覆盖所述第一聚合物嵌段的第一覆盖区域和所述第二聚合物嵌段的第二覆盖区域，并且揭示所述第二聚合物嵌段的第一暴露区域 第一聚合物嵌段和第二聚合物嵌段的第二曝光区域。