利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

158 条记录 (耗时 0.021 秒)

    PMR head with integrated side shield (ISS)
    3.
    发明申请
    PMR head with integrated side shield (ISS) 有权
    带集成侧护罩（ISS）的PMR头

    公开(公告)号：US20120069470A1

    公开(公告)日：2012-03-22

    申请号：US13373172

    申请日：2011-11-07

    申请人： Cherng-Chyi Han ,  Lijie Guan ,  Joe Smyth ,  Moris Dovek

    发明人： Cherng-Chyi Han ,  Lijie Guan ,  Joe Smyth ,  Moris Dovek

    IPC分类号： G11B5/23

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3163

    摘要： A PMR head comprises a substrate, a magnetic pole formed over the substrate, the pole having a pole tip having a cross-sectional tapered shape wherein the pole tip is surrounded by a write gap layer, an integrated shield comprising side shields on the substrate laterally surrounding the pole tip and a trailing shield overlying the pole tip and integral with the side shields.

    摘要翻译： PMR头包括衬底，形成在衬底上的磁极，所述极具有具有横截面锥形形状的极尖，其中极尖由写间隙层围绕;集成屏蔽，包括在衬底上的侧屏蔽 围绕极尖和覆盖极尖并且与侧护罩成一体的后挡板。

    Method to make a perpendicular magnetic recording head with a side write shield
    5.
    发明申请
    Method to make a perpendicular magnetic recording head with a side write shield 有权
    制作具有侧面写入屏蔽层的垂直磁记录头的方法

    公开(公告)号：US20110146060A1

    公开(公告)日：2011-06-23

    申请号：US12932552

    申请日：2011-02-28

    申请人： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

    发明人： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3163 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed by a RIE process using specific gases applied to a shield layer through a masking layer formed of material that has a slower etch rate than the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that separates the layer into two shields. The pole tip is then plated within the trench and, being aligned by the trench, acquires the wedge-shaped cross-section of the trench. An upper shield is then formed above the side shields and pole.

    摘要翻译： 垂直磁记录（PMR）头被制造成具有通过分离的一对侧屏蔽横向屏蔽的极尖并且被上屏蔽从上面屏蔽。 侧面屏蔽是通过RIE工艺形成的，其使用通过掩模层施加到屏蔽层上的特定气体，该屏蔽层由具有比屏蔽材料更慢的蚀刻速率的材料形成。 形成在NiFe的屏蔽层上并使用CH 3 OH，CO或NH 3的RIE气体或其组合的Ta，Ru / Ta，TaN或Ti的掩蔽层产生期望的结果。 蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成将该层分成两个屏蔽层的楔形沟槽。 然后将磁极尖端电镀在沟槽内，并且通过沟槽对准，获得沟槽的楔形横截面。 然后在侧屏和极上方形成上屏蔽。

    Wrap-around shielded writer with highly homogeneous shield material
    6.
    发明申请
    Wrap-around shielded writer with highly homogeneous shield material 有权
    带有高度均匀的屏蔽材料的环绕屏蔽作者

    公开(公告)号：US20110097601A1

    公开(公告)日：2011-04-28

    申请号：US12589597

    申请日：2009-10-26

    申请人： Zhigang Bai ,  Yan Wu ,  Moris Dovek ,  Cherng Chyi Han

    发明人： Zhigang Bai ,  Yan Wu ,  Moris Dovek ,  Cherng Chyi Han

    IPC分类号： G11B5/33

    CPC分类号： G11B5/6082 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/315 ,  G11B5/3163 ,  Y10T428/1171

    摘要： A perpendicular magnetic recording (PMR) head is fabricated with a main pole shielded laterally by a pair of side shields, shielded above by a trailing shield and shielded optionally below by a leading shield. The shields and the seed layers on which they are formed are formed of materials having substantially the same physical characteristics including the same material composition, the same hardness, the same response to processes such as ion beam etching (IBE), chemical mechanical polishing (CMP), mechanical lapping, such as the slider ABS lapping, the same coefficient of thermal expansion (CTE) as well as the same Bs. Optionally, the trailing shield may be formed on a high Bs seed layer to provide the write head with improved down-track performance.

    摘要翻译： 垂直磁记录（PMR）头被制造成具有由一对侧屏蔽横向屏蔽的主极，屏蔽在后面并由屏蔽罩屏蔽并且被前屏蔽罩屏蔽。 其形成的屏蔽层和种子层由具有相同物理特性的材料形成，包括相同的材料组成，相同的硬度，对离子束蚀刻（IBE），化学机械抛光（CMP） ），机械研磨，如滑块ABS研磨，相同的热膨胀系数（CTE）以及相同的Bs。 可选地，后屏蔽可以形成在高Bs种子层上，以向写头提供改进的下行轨迹性能。

    Laminated film for head applications
    7.
    发明授权
    Laminated film for head applications 有权
    用于头部应用的层压膜

    公开(公告)号：US07773341B2

    公开(公告)日：2010-08-10

    申请号：US11825034

    申请日：2007-07-03

    申请人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

    发明人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3116 ,  G11B5/1278

    摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).

    摘要翻译： 公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。 由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。 层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。 在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。 使用最上层的Ru层作为CMP停止层。 可以采用后退火工艺来进一步降低各向异性场（Hk）。

    Perpendicular magnetic recording write head with a self aligned stitched write shield
    8.
    发明授权
    Perpendicular magnetic recording write head with a self aligned stitched write shield 失效
    垂直磁记录写头与自对准缝合写屏蔽

    公开(公告)号：US07701666B2

    公开(公告)日：2010-04-20

    申请号：US12001350

    申请日：2007-12-11

    申请人： Cherng-Chyi Han ,  Kenichi Takano

    发明人： Cherng-Chyi Han ,  Kenichi Takano

    IPC分类号： G11B5/17

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

    摘要： A perpendicular magnetic recording (PMR) head with single or double coil layers has a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

    摘要翻译： 具有单线圈或双线圈层的垂直磁记录（PMR）头具有缝合在主写屏蔽上的小写写屏蔽。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

    Method for making a perpendicular magnetic recording write head with a self aligned stitched write shield
    10.
    发明申请
    Method for making a perpendicular magnetic recording write head with a self aligned stitched write shield 失效
    一种具有自对准缝合写屏蔽的垂直磁记录写头的方法

    公开(公告)号：US20080094750A1

    公开(公告)日：2008-04-24

    申请号：US12001350

    申请日：2007-12-11

    申请人： Cherng-Chyi Han ,  Kenichi Takano

    发明人： Cherng-Chyi Han ,  Kenichi Takano

    IPC分类号： G11B5/147

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

    摘要： A perpendicular magnetic recording (PMR) head with single or double coil layers has a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

    摘要翻译： 具有单线圈或双线圈层的垂直磁记录（PMR）头具有缝合在主写屏蔽上的小写写屏蔽。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。