公开(公告)号：US20080173349A1

公开(公告)日：2008-07-24

申请号：US11656151

申请日：2007-01-22

申请人： Shengzhoug Liu ,  Kevin Beernink ,  Arindam Banerjee ,  Chi-Chung Yang ,  Subhendu Guha

发明人： Shengzhoug Liu ,  Kevin Beernink ,  Arindam Banerjee ,  Chi-Chung Yang ,  Subhendu Guha

IPC分类号： H01L31/00

CPC分类号： H01L31/048 ,  H01L31/078 ,  Y02E10/50

摘要： A light weight photovoltaic device for use in stratospheric and outer space applications. The device includes a protective surface coating on the light incident side thereof. The protective coating does not deleteriously affect the photovoltaic properties of the solar cell, is formed of a material which protects said solar cell from the harsh conditions in the stratospheric or outer space environment in which the photovoltaic device is adapted to be used; and remains substantially unchanged when exposed to the harsh conditions in the stratosphere or outer space. The protective coating is preferably made of a spray coated silicone based material and is between 0.01 and 2 mil thick.

摘要翻译： 一种用于平流层和外层空间应用的重量轻的光伏器件。 该装置包括在其光入射侧的保护性表面涂层。 保护涂层不会有害地影响太阳能电池的光伏特性，由保护所述太阳能电池免受适用于光伏器件的平流层或外部空间环境中的恶劣条件的材料形成; 并且当暴露于平流层或外部空间的恶劣条件时，其基本上不变。 保护涂层优选由喷涂的硅氧烷基材料制成，并且在0.01至2密耳厚之间。

公开(公告)号：US4816082A

公开(公告)日：1989-03-28

申请号：US87264

申请日：1987-08-19

申请人： Subhendu Guha ,  Chi-Chung Yang ,  Stanford R. Ovshinsky

发明人： Subhendu Guha ,  Chi-Chung Yang ,  Stanford R. Ovshinsky

IPC分类号： H01L31/04 ,  H01L31/065 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/076 ,  H01L31/065 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

公开(公告)号：US4696758A

公开(公告)日：1987-09-29

申请号：US897236

申请日：1986-10-06

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi Chung Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi Chung Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  C09K11/07

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

公开(公告)号：US6087580A

公开(公告)日：2000-07-11

申请号：US766219

申请日：1996-12-12

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Chi-Chung Yang ,  Xunming Deng ,  Scott Jones

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Chi-Chung Yang ,  Xunming Deng ,  Scott Jones

IPC分类号： C23C16/24 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  H01L29/861 ,  H01L31/02 ,  H01L31/028 ,  H01L31/04 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.

摘要翻译： 包括中等程度（IRO）硅合金材料区域的高质量非单晶硅合金材料，直到但不包括在材料内形成渗透路径所需的体积百分比。 剩余的材料是无定形的或非晶态和微晶材料的混合物。 通过CVD使用不同量的氢稀释制备材料以产生含有不同量的IRO材料的材料。 优选地，该材料包括至少8体积％的IRO材料。