公开(公告)号：US09691641B2

公开(公告)日：2017-06-27

申请号：US13713007

申请日：2012-12-13

Applicant: Chia-Hung Huang ,  Jeng-Jyi Hwang ,  Chi-Ming Yang

Inventor： Chia-Hung Huang ,  Jeng-Jyi Hwang ,  Chi-Ming Yang

IPC: B08B3/04 ,  H01L21/67 ,  C11D11/00 ,  H01L21/687

CPC classification number: H01L21/67051 ,  B08B3/04 ,  C11D11/0047 ,  H01L21/68764 ,  H01L21/68771

Abstract: An apparatus for cleaning wafers includes a chamber, a rotatable substrate holder inside the chamber, a nozzle above the rotatable substrate holder, a cover facing downward and fluidly coupled with the nozzle. The rotatable substrate holder is configured to mount one or more semiconductor wafers on the rotatable substrate holder. The nozzle is configured to spray a cleaning medium onto the one or more semiconductor wafers. The cover is of a shape having a top edge with a top cross-sectional area and a bottom edge with a bottom cross-sectional area.

公开(公告)号：US20140166055A1

公开(公告)日：2014-06-19

申请号：US13713007

申请日：2012-12-13

Applicant: Chia-Hung HUANG ,  Jeng-Jyi HWANG ,  Chi-Ming YANG

Inventor： Chia-Hung HUANG ,  Jeng-Jyi HWANG ,  Chi-Ming YANG

IPC: B08B3/04

CPC classification number: H01L21/67051 ,  B08B3/04 ,  C11D11/0047 ,  H01L21/68764 ,  H01L21/68771

Abstract: An apparatus for cleaning wafers includes a chamber, a rotatable substrate holder inside the chamber, a nozzle above the rotatable substrate holder, a cover facing downward and fluidly coupled with the nozzle. The rotatable substrate holder is configured to mount one or more semiconductor wafers on the rotatable substrate holder. The nozzle is configured to spray a cleaning medium onto the one or more semiconductor wafers. The cover is of a shape having a top edge with a top cross-sectional area and a bottom edge with a bottom cross-sectional area.

Abstract translation: 一种用于清洁晶片的装置，包括一个室，一个可旋转的基板保持器，位于该室内，一个在可转动的基板保持架上方的喷嘴，一个面向下并与该喷嘴流体连接的盖。 可旋转衬底保持器被配置为将一个或多个半导体晶片安装在可旋转衬底保持器上。 喷嘴构造成将清洁介质喷射到一个或多个半导体晶片上。 该盖是具有顶部横截面积的顶部边缘和具有底部横截面积的底部边缘的形状。

公开(公告)号：US08754438B2

公开(公告)日：2014-06-17

申请号：US13400097

申请日：2012-02-19

Applicant: Ya-Wen Lin ,  Shih-Cheng Huang ,  Po-Min Tu ,  Chia-Hung Huang ,  Shun-Kuei Yang

Inventor： Ya-Wen Lin ,  Shih-Cheng Huang ,  Po-Min Tu ,  Chia-Hung Huang ,  Shun-Kuei Yang

IPC: H01L33/62

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/38 ,  H01L33/382

Abstract: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

Abstract translation: LED包括衬底，缓冲层，外延层和导电层。 外延层包括第一N型外延层，第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。 第一和第二N型外延层经由图案化的沟槽彼此接触。 因此，LED具有均匀的电流分布和更大的发光面积。 还提供了一种用于LED的制造方法。

公开(公告)号：US08604503B2

公开(公告)日：2013-12-10

申请号：US13600137

申请日：2012-08-30

Applicant: Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Ya-Wen Lin ,  Shun-Kuei Yang

Inventor： Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Ya-Wen Lin ,  Shun-Kuei Yang

IPC: H01L33/22

CPC classification number: H01L33/58 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32

Abstract: A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.

Abstract translation: 发光二极管包括衬底，衬底上的过渡层和过渡层上的外延层。 过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。 球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。 在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

公开(公告)号：US20130161652A1

公开(公告)日：2013-06-27

申请号：US13570214

申请日：2012-08-08

Applicant: Ya-Wen LIN ,  Po-Min TU ,  Shih-Cheng HUANG ,  Chia-Hung HUANG ,  Shun-Kuei YANG

Inventor： Ya-Wen LIN ,  Po-Min TU ,  Shih-Cheng HUANG ,  Chia-Hung HUANG ,  Shun-Kuei YANG

IPC: H01L33/02

CPC classification number: H01L33/22 ,  H01L33/007

Abstract: A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm.

Abstract translation: 发光二极管（LED）包括衬底，缓冲层和外延结构。 衬底具有形成在其上的图案化结构的第一表面。 图案形成结构包括多个突起。 缓冲层布置在基板的第一表面上。 外延结构布置在缓冲层上。 外延结构包括顺序地布置在缓冲层上的第一半导体层，有源层和第二半导体层。 第一半导体层具有附着到有源层的第二表面。 每个突起的峰值与第一半导体层的第二表面之间的距离为0.5μm至2.5μm。

公开(公告)号：US20120100648A1

公开(公告)日：2012-04-26

申请号：US13216244

申请日：2011-08-24

Applicant: SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

Inventor： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC: H01L33/60

CPC classification number: H01L33/0079 ,  H01L33/0095 ,  H01L33/46

Abstract: A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.

Abstract translation: 制造发光芯片的方法包括以下步骤：提供其上具有多个分离的外延岛的衬底，其中所述外延岛通过沟道彼此间隔开; 用绝缘材料填充通道; 在绝缘材料和外延岛上依次形成反射层，过渡层和基底; 去除衬底和绝缘材料以暴露通道; 并且切割反射层，过渡层和基底，以沿通道形成多个独立的芯片。

公开(公告)号：US20120097976A1

公开(公告)日：2012-04-26

申请号：US13214254

申请日：2011-08-22

Applicant: PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

Inventor： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC: H01L33/02 ,  H01L33/60

CPC classification number: H01L33/0079 ,  H01L33/20 ,  H01L33/405

Abstract: A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.

Abstract translation: 发光二极管芯片包括导电基板，设置在基板上的反射层，形成在反射层上的半导体结构，设置在半导体结构上的电极和延伸穿过半导体结构的多个狭缝。 半导体结构包括形成在反射层上的P型半导体层，形成在P型半导体层上的发光层和形成在发光层上的N型半导体层。 在半导体结构中和电极周围限定电流扩散区。 槽位于电流扩散区域外部。

公开(公告)号：US20120018847A1

公开(公告)日：2012-01-26

申请号：US13013825

申请日：2011-01-26

Applicant: PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

Inventor： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC: H01L29/20 ,  H01L21/20 ,  H01L29/06

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/16

Abstract: A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.

Abstract translation: 氮化镓系半导体器件包括复合衬底和氮化镓层。 复合衬底包括硅衬底和填料。 硅衬底包括第一表面和与第一表面相对的第二表面，并且第一表面在其中限定多个凹槽。 将填料填充到硅衬底的第一表面上的槽数中。 填料的热膨胀系数大于硅衬底的热膨胀系数。 氮化镓层形成在硅衬底的第二表面上。

公开(公告)号：US20070149393A1

公开(公告)日：2007-06-28

申请号：US11512220

申请日：2006-08-30

Applicant: Chia-Hung Huang ,  Yao-Ling Huang ,  Yao-Hsuan Tseng ,  Yu-Ming Lin ,  Shu-Ling Liu

Inventor： Chia-Hung Huang ,  Yao-Ling Huang ,  Yao-Hsuan Tseng ,  Yu-Ming Lin ,  Shu-Ling Liu

IPC: B01J23/00

CPC classification number: B01J35/004 ,  B01J35/023 ,  B01J35/026 ,  B01J37/0215 ,  B01J37/04

Abstract: The present invention relates to a nano-sized photocatalytic sol and application thereof. The invention utilizes spherical nano-photocatalyst and non-spherical photocatalytic sol for coating a photocatalyst layer on a substrate. Because of the stereo, interlaced and composite structure between spherical photocatalyst and non-spherical photocatalyst, a hard and well adhesion coated layer of photocatalyst with good photocatalytic activity can be obtained without using binder.

Abstract translation: 本发明涉及一种纳米级光催化溶胶及其应用。 本发明利用球形纳米光催化剂和非球形光催化溶胶在基材上涂覆光催化剂层。 由于球形光催化剂和非球形光催化剂之间的立体，交错和复合结构，可以在不使用粘合剂的情况下获得具有良好光催化活性的硬质和良好粘附的光催化剂层。

公开(公告)号：US20150265917A1

公开(公告)日：2015-09-24

申请号：US14220150

申请日：2014-03-20

Applicant: Chia-Han Chang ,  Chia-Hung Huang ,  Mark Junren Wiener

Inventor： Chia-Han Chang ,  Chia-Hung Huang ,  Mark Junren Wiener

IPC: A63F13/31 ,  A63F13/215 ,  A63F13/213 ,  A63F13/212 ,  A63F13/217

CPC classification number: F41J5/04 ,  F41J5/00 ,  F42B12/365 ,  F42B12/40 ,  F42B30/006

Abstract: A game apparatus having an attack apparatus, a wearable apparatus and a communication apparatus is provided. The communication apparatus determines a property of the attack apparatus according to an attack signal sensed by the wearable apparatus and adjusts a status prompt signal emitted by the wearable apparatus according to the property of the attack apparatus.

Abstract translation: 提供具有攻击装置，可穿戴装置和通信装置的游戏装置。 通信装置根据由可穿戴装置感测到的攻击信号来确定攻击装置的属性，并根据攻击装置的属性调整由可穿戴装置发出的状态提示信号。