METHOD OF MAKING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MADE THEREOF
    1.
    发明申请
    METHOD OF MAKING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MADE THEREOF 审中-公开
    制造发光装置的方法及其发光装置

    公开(公告)号:US20140042470A1

    公开(公告)日:2014-02-13

    申请号:US13570558

    申请日:2012-08-09

    IPC分类号: H01L33/50 H01L33/08

    摘要: This disclosure discloses a method of making a light-emitting device. The method comprises forming a plurality of light-emitting chips, each of the light-emitting chips comprising an epitaxial structure and an electrode formed on the epitaxial structure; forming a protection layer on the electrode in each of the light-emitting chips; forming a plurality of light-emitting groups by collecting the light-emitting chips, wherein each of the light-emitting groups having substantially the same opto-electrical characteristics; forming a wavelength converted layer in each of the light-emitting groups to cover the epitaxial structure and the protection layer; and removing the wavelength converted layer on the protection layer to expose the protection layer.

    摘要翻译: 本公开公开了一种制造发光器件的方法。 该方法包括形成多个发光芯片,每个发光芯片包括外延结构和形成在外延结构上的电极; 在每个发光芯片中的电极上形成保护层; 通过收集发光芯片形成多个发光基团,其中每个发光基团具有基本上相同的光电特性; 在每个发光基团中形成波长转换层以覆盖外延结构和保护层; 以及去除保护层上的波长转换层以使保护层露出。

    Light-emitting device and light mixing device
    2.
    发明授权
    Light-emitting device and light mixing device 有权
    发光装置和光混合装置

    公开(公告)号:US08552454B2

    公开(公告)日:2013-10-08

    申请号:US13306487

    申请日:2011-11-29

    IPC分类号: H01L33/50

    摘要: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer.

    摘要翻译: 公开了一种发光装置,包括:载体; 设置在所述载体上的发光元件; 覆盖所述发光元件的第一导光层,并设置在所述载体上; 覆盖第一导光层和发光元件的波长转换和导光层,并设置在载体上; 以及设置在所述第一导光层与所述波长转换和导光层之间的低折射率层; 其中所述第一导光层包括梯度折射率,所述波长转换和导光层包括圆顶形结构,并用于转换从所述发光元件发射的光的波长并透射光,并且所述低折射率层 用于反射来自波长转换和光导层的光。

    LIGHT EMITTING DEVICE
    3.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号:US20120326185A1

    公开(公告)日:2012-12-27

    申请号:US13530608

    申请日:2012-06-22

    IPC分类号: H01L27/15

    摘要: A light emitting device including a carrying element having two electric conductors connectable to a power source, a light emitting element disposed on the carrying element and electrically connected to the two electric conductors, and at least one correction element electrically connected to the light emitting element, wherein the light emitting element is adapted to provide a light source upon connection of the two electric conductors with the power source, and the at least one correction element allows the light emitting element to have functions of temperature compensation, voltage correction, or surge absorption.

    摘要翻译: 一种发光器件,包括具有可连接到电源的两个电导体的携带元件,设置在所述承载元件上并电连接到所述两个电导体的发光元件以及电连接到所述发光元件的至少一个校正元件, 其中所述发光元件适于在所述两个电导体与所述电源连接时提供光源,并且所述至少一个校正元件允许所述发光元件具有温度补偿,电压校正或浪涌吸收的功能。

    Semiconductor light-emitting device and method
    4.
    发明授权
    Semiconductor light-emitting device and method 有权
    半导体发光器件及方法

    公开(公告)号:US08207551B2

    公开(公告)日:2012-06-26

    申请号:US13030644

    申请日:2011-02-18

    IPC分类号: H01L33/00

    摘要: The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.

    摘要翻译: 本发明公开了一种包括半导体发光元件,第一附着层和波长转换结构的半导体发光器件。 从半导体发光元件发射的初级光进入波长转换结构以产生其波长与初级光的波长不同的转换光。 此外,本发明还提供了其形成方法。

    LIGHT-EMITTING DEVICE WITH TEMPERATURE COMPENSATION
    6.
    发明申请
    LIGHT-EMITTING DEVICE WITH TEMPERATURE COMPENSATION 审中-公开
    具有温度补偿功能的发光装置

    公开(公告)号:US20120025228A1

    公开(公告)日:2012-02-02

    申请号:US13192997

    申请日:2011-07-28

    IPC分类号: H01L33/08 H01L33/64

    摘要: The present application provides a light-emitting device comprising a light-emitting diode group, a temperature compensation element electrically connected to the light-emitting diode group. When a junction temperature of the light-emitting diode group is increased from a first temperature to a second temperature during operation, the current flowing through the light-emitting diode group at the second temperature is larger than the current flowing through the light-emitting diode group at the first temperature.

    摘要翻译: 本发明提供一种包括发光二极管组,电连接到发光二极管组的温度补偿元件的发光器件。 当运行中发光二极管组的结温从第一温度升至第二温度时,在第二温度下流过发光二极管组的电流大于流过发光二极管的电流 组在第一个温度。

    LIGHT-EMITTING SEMICONDUCTOR APPARATUS
    7.
    发明申请
    LIGHT-EMITTING SEMICONDUCTOR APPARATUS 有权
    发光二极管装置

    公开(公告)号:US20100171094A1

    公开(公告)日:2010-07-08

    申请号:US12652373

    申请日:2010-01-05

    IPC分类号: H01L33/00

    摘要: A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure.

    摘要翻译: 发光半导体装置包括发光结构,反射结构和载体。 发光结构包括第一类型半导体层,第二类型半导体层和位于第一类型半导体层和第二类型半导体层之间的发光层。 反射结构具有第一透明导电层,第一图案化反射层,第二透明导电层和第二图案化反射层。 第一图案化反射层设置在第一透明导电层和第二透明导电层之间,并且具有用于物理连接第一透明导电层和第二透明导电层的开口。 第二透明导电层设置在第一图案化反射层和第二图案化反射层之间。 第二图案化反射层位于与开口对应的区域上。 发光结构和载体分别在反射结构的两侧。

    Semiconductor light-emitting device and method
    8.
    发明申请
    Semiconductor light-emitting device and method 有权
    半导体发光器件及方法

    公开(公告)号:US20090014744A1

    公开(公告)日:2009-01-15

    申请号:US12216848

    申请日:2008-07-11

    IPC分类号: H01L33/00

    摘要: The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.

    摘要翻译: 本发明公开了一种包括半导体发光元件,第一附着层和波长转换结构的半导体发光器件。 从半导体发光元件发射的初级光进入波长转换结构以产生其波长与初级光的波长不同的转换光。 此外,本发明还提供了其形成方法。

    Yellow phosphor material and white light-emitting device using the same
    9.
    发明申请
    Yellow phosphor material and white light-emitting device using the same 审中-公开
    黄色荧光体材料和使用其的白色发光装置

    公开(公告)号:US20050099786A1

    公开(公告)日:2005-05-12

    申请号:US10702593

    申请日:2003-11-07

    摘要: A yellow phosphor material has a host with a formula (TbxMyCez)Al5O12, wherein x+y+z=3 , 3>x>0 and y≠0 and a Ce activator. M is selected from the group consisting of Sc, Y, Dy, Ho, Er, Tm, Yb, and Lu. By changing the diameter of metal ions, the crystal field thereof may be modulated to thereby alter the energy level of the excited state to which the activator is transferred upon irradiation by a specific wavelength of light. The phosphor can be used with a blue LED to form a white light source.

    摘要翻译: 黄色荧光体材料具有具有下式的主体:具有下式的主体:(B 1 H 5) 其中x + y + z = 3,3> 0和y>和Ce活化剂。 M选自Sc,Y,Dy,Ho,Er,Tm,Yb和Lu。 通过改变金属离子的直径,其晶体场可被调制,从而改变在特定波长的光照射时活化剂转移到的激发态的能级。 荧光体可与蓝色LED一起使用以形成白色光源。