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    Apparatus and Methods for End Point Determination in Reactive Ion Etching
    3.
    发明申请
    Apparatus and Methods for End Point Determination in Reactive Ion Etching 有权
    反应离子蚀刻中终点测定的装置和方法

    公开(公告)号：US20130023065A1

    公开(公告)日：2013-01-24

    申请号：US13189287

    申请日：2011-07-22

    申请人： Chien Rhone Wang ,  Tzu-Cheng Lin ,  Yu-Jen Cheng ,  Chih-Wei Lai ,  Hung-Pin Chang ,  Tsang-Jiuh Wu

    发明人： Chien Rhone Wang ,  Tzu-Cheng Lin ,  Yu-Jen Cheng ,  Chih-Wei Lai ,  Hung-Pin Chang ,  Tsang-Jiuh Wu

    IPC分类号： H01L21/66

    CPC分类号： H01J37/32963

    摘要： Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.

    摘要翻译： 执行终点确定的方法和装置。 一种方法包括将晶片接收到用于进行RIE蚀刻的蚀刻工具室中; 开始RIE蚀刻以在晶片中形成通孔; 接收与RIE蚀刻工艺相关的蚀刻工具室的一个或多个物理参数的原位测量; 为腔室中的RIE蚀刻提供虚拟计量模型; 将接收到的原位测量值输入到腔室中的RIE蚀刻的虚拟测量模型; 执行虚拟计量模型以通过深度估计电流; 将经过深度的估计电流与目标深度进行比较; 并且当比较指示当前经过深度在目标深度的预定阈值内时; 输出停止信号。 公开了一种用于该方法实施例的装置。

    Optical blood gas sensor for real time measurement
    4.
    发明授权
    Optical blood gas sensor for real time measurement 有权
    光学血液气体传感器，用于实时测量

    公开(公告)号：US07883668B2

    公开(公告)日：2011-02-08

    申请号：US11949563

    申请日：2007-12-03

    申请人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Nien-Hsuan Chou ,  Chih-Wei Lai

    发明人： Shen-Kan Hsiung ,  Jung-Chuan Chou ,  Tai-Ping Sun ,  Nien-Hsuan Chou ,  Chih-Wei Lai

    IPC分类号： G01J1/48

    CPC分类号： G01N21/783

    摘要： An optical gas concentration sensor and method for measuring blood gas based on the light adsorption sensing technique are disclosed. The optical gas concentration sensor comprises a light source, a photo detector, and a gas filtering membrane for separating the indicator and a liquid. A gas in the liquid diffuses to the indicator through the gas filtering membrane so as to change the color of the indicator due to the chemical reaction occurred between the indicator and the gas. Then, the photo detector receives the light passing though the reacted indicator from the light source. The gas concentration is determined based on pH-sensitive absorbance spectrum of the indicator.

    摘要翻译： 公开了一种基于光吸收传感技术测量血液气体的光学气体浓度传感器和方法。 光学气体浓度传感器包括用于分离指示剂和液体的光源，光电检测器和气体过滤膜。 液体中的气体通过气体过滤膜扩散到指示器，以便由于指示剂和气体之间发生化学反应而改变指示器的颜色。 然后，光检测器从光源接收通过反应指示器的光。 基于指示剂的pH敏感吸收光谱确定气体浓度。

    Auto routing for optimal uniformity control
    5.
    发明授权
    Auto routing for optimal uniformity control 有权
    自动布线，实现最佳均匀度控制

    公开(公告)号：US07767471B2

    公开(公告)日：2010-08-03

    申请号：US11830519

    申请日：2007-07-30

    申请人： Jean Wang ,  Francis Ko ,  Henry Lo ,  Chi-Chun Hsieh ,  Amy Wang ,  Chih-Wei Lai ,  Chun-Hsien Lin

    发明人： Jean Wang ,  Francis Ko ,  Henry Lo ,  Chi-Chun Hsieh ,  Amy Wang ,  Chih-Wei Lai ,  Chun-Hsien Lin

    IPC分类号： H01L21/00 ,  G01R31/26

    CPC分类号： H01L22/12

    摘要： A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.

    摘要翻译： 提供了一种提高晶片内均匀性的方法。 该方法包括通过第一处理步骤和第二处理步骤形成电子部件，其中电气部件具有目标电参数。 该方法包括提供用于执行第一处理步骤的第一多个生产工具; 提供用于执行所述第二处理步骤的第二多个生产工具; 提供晶片; 使用所述第一多个生产工具之一在所述晶片上执行所述第一工艺步骤; 以及从所述第二多个生产工具中选择包括第一生产工具的第一路线。 由第一路径制造的晶片上的目标电参数的晶片内均匀性大于在第二多个生产工具中包括第二生产工具的第二路线。

    METHOD AND SYSTEM FOR DYNAMICALLY MANAGING REMOVABLE DEVICE
    6.
    发明申请
    METHOD AND SYSTEM FOR DYNAMICALLY MANAGING REMOVABLE DEVICE 审中-公开
    用于动态管理可拆卸设备的方法和系统

    公开(公告)号：US20100019037A1

    公开(公告)日：2010-01-28

    申请号：US12365899

    申请日：2009-02-05

    申请人： Chih-Wei Lai ,  Kuen-Bin Lai ,  Chi-Tai Wu

    发明人： Chih-Wei Lai ,  Kuen-Bin Lai ,  Chi-Tai Wu

    IPC分类号： G06K7/01

    CPC分类号： G06F13/385 ,  Y02D10/14 ,  Y02D10/151

    摘要： A method for dynamically managing a removable device includes the following steps: generating a device insertion interrupt to indicate that the removable device has been coupled to a connection interface when detecting an insert event corresponding to the removable device; clearing the device insertion interrupt before a processing mechanism corresponding to the connection interface handles the device insertion interrupt; and identifying a specification of the removable device to dynamically manage the removable device according to the specification; wherein when the specification corresponds to a first specification, a first management scheme is activated to manage the removable device, when the specification corresponds to a second specification, a second management scheme is activated to manage the removable device, and the first specification is different from the second specification.

    摘要翻译： 一种用于动态管理可移动设备的方法包括以下步骤：当检测到与可移动设备相对应的插入事件时，产生设备插入中断以指示可移动设备已经耦合到连接接口; 在与连接接口对应的处理机制处理设备插入中断之前清除设备插入中断; 以及根据说明书识别可拆卸设备的动态管理可移动设备的规范; 其中当所述规范对应于第一规范时，启动第一管理方案以管理所述可移动设备，当所述规范对应于第二规范时，第二管理方案被激活以管理所述可移除设备，并且所述第一规范不同于 第二个规格。

    Method and system for controlling copper chemical mechanical polish uniformity
    9.
    发明授权
    Method and system for controlling copper chemical mechanical polish uniformity 有权
    控制铜化学机械抛光均匀性的方法和系统

    公开(公告)号：US08409993B2

    公开(公告)日：2013-04-02

    申请号：US11810720

    申请日：2007-06-07

    申请人： Francis Ko ,  Chun-Hsien Lin ,  Jean Wang ,  Chih-Wei Lai ,  Ping-Hsu Chen ,  Henry Lo

    发明人： Francis Ko ,  Chun-Hsien Lin ,  Jean Wang ,  Chih-Wei Lai ,  Ping-Hsu Chen ,  Henry Lo

    IPC分类号： H01L21/302

    CPC分类号： H01L22/20 ,  H01L21/3212 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.

    摘要翻译： 提供了一种通过控制CMP工艺来控制铜沟槽结构中的电阻率均匀性的系统和方法。 优选实施例包括系统和方法，其中可以创建包括至少浆料臂位置的多个CMP工艺配方。 可以估计用于至少一层半导体衬底的一组计量数据，并且可以基于该组计量数据来选择最佳CMP工艺配方。 可以在半导体衬底上实现最佳CMP工艺配方。

    Removal rate estimating method of a chemical mechanical polishing process under mixed products or mixed layers
    10.
    发明申请
    Removal rate estimating method of a chemical mechanical polishing process under mixed products or mixed layers 审中-公开
    混合产品或混合层下化学机械抛光工艺的去除率估算方法

    公开(公告)号：US20070145010A1

    公开(公告)日：2007-06-28

    申请号：US11512194

    申请日：2006-08-30

    申请人： Ming-Wei Lee ,  Chih-Wei Lai

    发明人： Ming-Wei Lee ,  Chih-Wei Lai

    IPC分类号： C03C15/00 ,  H01L21/461 ,  B44C1/22 ,  H01L21/302

    CPC分类号： B24B37/042

    摘要： A removal rate estimating method of a chemical mechanical polishing process under mixed products or mixed layers is provided, the estimation at least comprises: providing a pad removal rate of a specific product or layer; providing a removal rate adjustment; and summing up the pad removal rate of the specific product or layer and the removal rate adjustment as an estimated value of the removal rate of the chemical mechanical polishing process under mixed products or mixed layers. Wherein the value of the removal rate adjustment will be set to zero when the pad is replaced with a new one.

    摘要翻译： 提供了混合产品或混合层下的化学机械抛光工艺的去除率估计方法，该估计至少包括：提供特定产品或层的垫移除速率; 提供去除率调整; 并将特定产品或层的垫移除速率和去除率调整的总和作为混合产品或混合层下的化学机械抛光工艺的去除速率的估计值。 其中移除速度调整的值将被替换为新的值时设置为零。