公开(公告)号：US20110156225A1

公开(公告)日：2011-06-30

申请号：US13062565

申请日：2009-07-31

申请人： Hiroshi Hozoji ,  Toshiaki Morita ,  Yusuke Yasuda ,  Chiko Yorita ,  Yuji Shirai

发明人： Hiroshi Hozoji ,  Toshiaki Morita ,  Yusuke Yasuda ,  Chiko Yorita ,  Yuji Shirai

IPC分类号： H01L23/552 ,  H01L21/56

CPC分类号： H01L23/3121 ,  H01L21/561 ,  H01L23/3677 ,  H01L23/552 ,  H01L23/66 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/165 ,  H01L2221/68331 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/45599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/0206 ,  H05K1/0218 ,  H05K3/284 ,  H05K2201/0715 ,  H05K2201/0919 ,  H05K2203/1131 ,  H05K2203/1316 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A semiconductor device achieving both electromagnetic wave shielding property and reliability in a heating process upon mounting electronic components. In the semiconductor device, mount devices 5 and 6 mounted on a main surface of a circuit board 1 are provided, the mount devices 5 and 6 are electrically connected to a wiring pattern 4 at the main surface of the circuit board 1, a sealant 7 of an insulating resin is formed to seal the mount devices 5 and 6, metal particles are applied to a surface of the sealant 7, and the metal particles applied are sintered, thereby forming an electromagnetic shielding layer 2, and electrically connecting the electromagnetic shielding layer 2 to a ground pattern 3 of the circuit board 1.

摘要翻译： 一种在安装电子元件时实现电加热过程中的电磁波屏蔽性和可靠性的半导体器件。 在半导体装置中，设置安装在电路基板1的主表面上的安装装置5和6，安装装置5和6在电路板1的主表面电连接到布线图案4，密封剂7 形成绝缘树脂以密封安装装置5和6，将金属颗粒施加到密封剂7的表面，并且将所施加的金属颗粒烧结，从而形成电磁屏蔽层2，并将电磁屏蔽层 2到电路板1的接地图案3。

公开(公告)号：US07583163B2

公开(公告)日：2009-09-01

申请号：US11891368

申请日：2007-08-10

申请人： Yasuo Osone ,  Chiko Yorita ,  Yuji Shirai ,  Seiichi Tomoi

发明人： Yasuo Osone ,  Chiko Yorita ,  Yuji Shirai ,  Seiichi Tomoi

IPC分类号： H03H9/00 ,  H03H9/205 ,  H01L41/08

CPC分类号： H03H3/04 ,  H03H9/564 ,  H03H9/589 ,  H03H2003/025

摘要： A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.

摘要翻译： 提供了能够以低成本一体地形成对应于同一芯片上的多个频带的SMR型声波滤波器的技术。 在包括对应于形成在同一芯片（基板）上的多个带的多个带通滤波器的SMR型声波滤波器中，形成声学多层膜，而不需要最少数量的掩模，并且共同形成具有不同厚度的压电薄膜。 例如，在以无掩模的方式在模具上形成在平台水田的深槽中的声学多层膜（低声阻抗层和高声阻抗层）之后，压电薄膜是c轴取向的， 并通过CMP方法等进行抛光，以对各个带的厚度进行调整，因此，在同一芯片上形成多个带的SMR型声波滤波器。

公开(公告)号：US20110128713A1

公开(公告)日：2011-06-02

申请号：US12956224

申请日：2010-11-30

申请人： Kenya KAWANO ,  Chiko YORITA ,  Yuji SHIRAI

发明人： Kenya KAWANO ,  Chiko YORITA ,  Yuji SHIRAI

IPC分类号： H05K1/18 ,  H01L21/50

CPC分类号： H05K1/186 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/4614 ,  H05K2201/09118 ,  H05K2203/041 ,  H05K2203/0733 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49146 ,  Y10T29/49165 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In a semiconductor device in which a plurality of wiring substrates each mounting an electronic component are stacked and sealed by a resin, the semiconductor device can be downsized, thinned, and highly reliable, and its manufacturing cost can be reduced. By using a metal paste for electrical connection between the stacked lower-layer side wiring substrate and upper-layer side wiring substrate, a connecting pitch can be smaller than that in a connecting method of using a solder ball including Cu core, and the connection at low temperature can be achieved. Also, by coating a metal paste by a print-coating method or a dispense-coating method, manufacturing steps are simplified, so that the manufacturing cost is reduced.

摘要翻译： 在其中通过树脂层叠并密封安装电子部件的多个布线基板的半导体装置中，可以使半导体装置小型化，薄型化，高可靠性，并且可以降低制造成本。 通过使用堆叠的下层侧布线基板和上层侧布线基板之间的电连接用金属膏，连接间距可以小于使用包括Cu芯的焊球的连接方法中的连接间距， 可实现低温。 此外，通过印刷涂布法或分散涂布法涂覆金属糊剂，简化了制造步骤，从而降低了制造成本。

公开(公告)号：US20100172116A1

公开(公告)日：2010-07-08

申请号：US12612699

申请日：2009-11-05

申请人： Chiko Yorita ,  Yoshihide Yamaguchi ,  Yuji Shirai ,  Yu Hasegawa

发明人： Chiko Yorita ,  Yoshihide Yamaguchi ,  Yuji Shirai ,  Yu Hasegawa

IPC分类号： H05K9/00 ,  H05K3/36

CPC分类号： H01L21/565 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/552 ,  H01L23/66 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K3/181 ,  H05K3/284 ,  H05K9/0084 ,  Y10T29/49126 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A shielded electronic component including a wiring board, at least one semiconductor chip mounted on a main surface of the wiring board, a sealant which seals the whole of an upper surface of the wiring board, and a nickel (Ni) plating film formed on an upper surface of the sealant is provided. The Ni plating film is formed on a palladium (Pd) pretreatment layer formed on the upper surface of the sealant with using high-pressure CO2 in a state of protecting a back surface of the wiring board, and is electrically connected with an end portion of a ground wiring layer of the wiring board or a ground (GND) connection through-hole connected with the end portion of the ground wiring layer.

摘要翻译： 一种屏蔽电子元件，包括布线板，安装在所述布线板的主表面上的至少一个半导体芯片，密封所述布线板的整个上表面的密封剂和形成在所述布线板上的镍（Ni） 提供密封剂的上表面。 在保护接线板的背面的状态下，使用高压CO 2形成在密封剂的上表面上的钯（Pd）预处理层上形成Ni镀膜，并与 布线板的接地布线层或与接地布线层的端部连接的接地（GND）连接通孔。

公开(公告)号：US07750310B2

公开(公告)日：2010-07-06

申请号：US11501779

申请日：2006-08-10

申请人： Tomoyuki Seino ,  Norihito Yanagita ,  Toshiaki Takai ,  Chiko Yorita ,  Naoki Matsushima

发明人： Tomoyuki Seino ,  Norihito Yanagita ,  Toshiaki Takai ,  Chiko Yorita ,  Naoki Matsushima

IPC分类号： G01T1/24

CPC分类号： G01T1/2985 ,  A61B6/037 ,  G01T1/243 ,  G01T1/244 ,  G01T1/249

摘要： The present invention provides a semiconductor radioactive ray detector having the excellent energy resolution or time precision, a radioactive detection module, and a nuclear medicine diagnosis apparatus. The semiconductor radioactive ray detector has a structure in which plate-like elements made of cadmium telluride and conductive members are alternately laminated and the plate-like element made of cadmium telluride and the conductive member are adhered to each other with a conductive adhesive agent, and the Young's modulus of the conductive adhesive agent is in the range from 350 MPa to 1000 MPa, while the conductive members are made from a material with the linear expansion coefficient of the conductive members in the range from 5×10−6/° C. to 7×10−6/° C.

摘要翻译： 本发明提供了具有优异的能量分辨率或时间精度的半导体放射线检测器，放射性检测模块和核医学诊断装置。 半导体放射线检测器具有由碲化镉和导电构件制成的板状元件交替层叠的结构，并且由碲化镉构成的板状元件和导电元件用导电粘合剂彼此粘合，并且 导电性粘合剂的杨氏模量在350MPa〜1000MPa的范围内，导电性部件由导电性部件的线膨胀系数为5×10 -6 /℃的材料制成。 至7×10-6 /℃

公开(公告)号：US20120292772A1

公开(公告)日：2012-11-22

申请号：US13561302

申请日：2012-07-30

申请人： Chiko Yorita ,  Yoshihide Yamaguchi ,  Yuji Shirai ,  Yu Hasegawa

发明人： Chiko Yorita ,  Yoshihide Yamaguchi ,  Yuji Shirai ,  Yu Hasegawa

IPC分类号： H01L23/52

CPC分类号： H01L21/565 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/552 ,  H01L23/66 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K3/181 ,  H05K3/284 ,  H05K9/0084 ,  Y10T29/49126 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A shielded electronic component including a wiring board, at least one semiconductor chip mounted on a main surface of the wiring board, a sealant which seals the whole of an upper surface of the wiring board, and a nickel (Ni) plating film formed on an upper surface of the sealant is provided. The Ni plating film is formed on a palladium (Pd) pretreatment layer formed on the upper surface of the sealant with using high-pressure CO2 in a state of protecting a back surface of the wiring board, and is electrically connected with an end portion of a ground wiring layer of the wiring board or a ground (GND) connection through-hole connected with the end portion of the ground wiring layer.

摘要翻译： 一种屏蔽电子元件，包括布线板，安装在所述布线板的主表面上的至少一个半导体芯片，密封所述布线板的整个上表面的密封剂和形成在所述布线板上的镍（Ni） 提供密封剂的上表面。 在保护接线板的背面的状态下，使用高压CO 2形成在密封剂的上表面上的钯（Pd）预处理层上形成Ni镀膜，并与 布线板的接地布线层或与接地布线层的端部连接的接地（GND）连接通孔。

公开(公告)号：US20110248389A1

公开(公告)日：2011-10-13

申请号：US13050288

申请日：2011-03-17

申请人： Chiko YORITA ,  Tsutomu HARA ,  Hiroshi OKABE ,  Tomonori TANOUE ,  Yuji SHIRAI

发明人： Chiko YORITA ,  Tsutomu HARA ,  Hiroshi OKABE ,  Tomonori TANOUE ,  Yuji SHIRAI

IPC分类号： H01L23/552 ,  H01L21/82 ,  H01L23/48

CPC分类号： H01L23/66 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/3677 ,  H01L23/552 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/0204 ,  H05K1/0206 ,  H05K1/144 ,  H05K3/0052 ,  H05K3/284 ,  H05K2201/042 ,  H05K2201/0715 ,  H05K2201/09972 ,  H05K2201/10242 ,  H05K2201/10371 ,  H05K2201/10416 ,  H05K2203/1316 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： An upper module board on which an integrated chip component with a low upper temperature limit is mounted and a lower module board on which a heat-generating semiconductor chip, a single chip component and an integrated chip component are mounted are electrically and mechanically connected via a plurality of conductive connecting members, and these are sealed together with mold resin. In such a circumstance, a shield layer made up of a stacked film of a Cu plating film and a Ni plating film is formed on side surfaces of the upper and lower module boards and surfaces (upper and side surfaces) of the mold resin, thereby realizing the electromagnetic wave shield structure.

摘要翻译： 安装了具有低温度限制的集成芯片部件的上模块板和安装有发热半导体芯片，单芯片部件和集成芯片部件的下模块板通过以下方式电连接和机械连接： 多个导电连接构件，并且这些与模制树脂密封在一起。 在这种情况下，在模具树脂的上模块板和下模块板的表面（上表面和侧表面）的侧表面上形成由Cu镀膜和Ni镀膜的叠层膜构成的屏蔽层，由此 实现电磁波屏蔽结构。

公开(公告)号：US20110012263A1

公开(公告)日：2011-01-20

申请号：US12814472

申请日：2010-06-13

申请人： Hanae HATA ,  Masato Nakamura ,  Nobuhiro Kinoshita ,  Jumpei Konno ,  Chiko Yorita

发明人： Hanae HATA ,  Masato Nakamura ,  Nobuhiro Kinoshita ,  Jumpei Konno ,  Chiko Yorita

IPC分类号： H01L23/538 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L24/16 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/45144 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/48

摘要： In order to achieve the highly reliable and highly functional semiconductor device capable of the high-speed transmission by stacking thin chips and substrates, a connecting process and a connecting structure capable of making a solid connection at a low temperature with a low load and maintaining the shape of a connecting portion even if the connecting portion is heated in the stacking process and the subsequent mounting process are provided. In a semiconductor device in which semiconductor chips or wiring boards on which semiconductor chips are mounted are stacked, a connecting structure between electrodes of the stacked semiconductor chips or wiring boards includes a pair of electrodes mainly made of Cu and a solder layer made of Sn—In based alloy sandwiched between the electrodes, and Sn—Cu—Ni intermetallic compounds are dispersed in the solder layer.

摘要翻译： 为了实现能够通过堆叠薄片和衬底的高速传输的高可靠性和高功能的半导体器件，能够在低负载下实现牢固连接的连接工艺和连接结构，并且保持 即使在堆叠过程中加热连接部分并且提供随后的安装过程，连接部分的形状也是如此。 在其中堆叠半导体芯片的半导体芯片或布线板堆叠的半导体器件中，堆叠的半导体芯片或布线板的电极之间的连接结构包括主要由Cu制成的一对电极和由Sn- 夹在电极之间的基体合金和Sn-Cu-Ni金属间化合物分散在焊料层中。

公开(公告)号：US20100109052A1

公开(公告)日：2010-05-06

申请号：US12608751

申请日：2009-10-29

申请人： Shizuki NAKAJIMA ,  Hiroyuki NAGAI ,  Yuji SHIRAI ,  Hirokazu NAKEJIMA ,  Chushiro KUSANO ,  Yu HASEGAWA ,  Chiko YORITA ,  Yasuo OSONE

发明人： Shizuki NAKAJIMA ,  Hiroyuki NAGAI ,  Yuji SHIRAI ,  Hirokazu NAKEJIMA ,  Chushiro KUSANO ,  Yu HASEGAWA ,  Chiko YORITA ,  Yasuo OSONE

IPC分类号： H01L27/082 ,  H01L27/088 ,  H01L21/8222 ,  H01L29/78

CPC分类号： H01L29/7835 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/66 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/28 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/16 ,  H01L27/088 ,  H01L29/04 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1087 ,  H01L29/41758 ,  H01L29/66659 ,  H01L29/7371 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H05K1/0206 ,  H05K2201/09481 ,  H05K2201/096 ,  H05K2201/10674 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01032 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/013

摘要： In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.

摘要翻译： 在其中形成用于功率放大器模块的功率放大器电路的LDMOSFET元件形成的半导体芯片中，源极突起电极设置在LDMOSFET形成区域中，其中多个源极区域，多个漏极区域和多个栅极 形成用于LDMOSFET元件的电极。 源极突起电极通过源极导体层形成在主要由铝制成的源极焊盘上，该源极导体层比源焊盘厚，主要由铜制成。 在源凸起电极和源极导体层之间不设置树脂膜。

公开(公告)号：US20070176298A1

公开(公告)日：2007-08-02

申请号：US11652235

申请日：2007-01-10

申请人： Yasuo Osone ,  Kenya Kawano ,  Chiko Yorita ,  Yu Hasegawa ,  Yuji Shirai ,  Naotaka Tanaka ,  Seiichi Tomoi ,  Hiroshi Okabe

发明人： Yasuo Osone ,  Kenya Kawano ,  Chiko Yorita ,  Yu Hasegawa ,  Yuji Shirai ,  Naotaka Tanaka ,  Seiichi Tomoi ,  Hiroshi Okabe

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L23/3677 ,  H01L23/3121 ,  H01L23/34 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1515 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2224/48237 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.

摘要翻译： 发热时刻不同的加热元件层叠在堆叠状态，允许靠近布线基板的加热元件用作另一个加热元件的热​​扩散板。