公开(公告)号：US08780507B2

公开(公告)日：2014-07-15

申请号：US11966003

申请日：2007-12-28

Applicant: Ying Hong ,  Kochan Ju ,  Ching Hwa Tsang

Inventor： Ying Hong ,  Kochan Ju ,  Ching Hwa Tsang

IPC: G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/398 ,  H01L43/08

Abstract: A transducer according to one embodiment comprises a first ferromagnetic layer; a second ferromagnetic layer; and an electrically conductive layer positioned between the ferromagnetic layers; wherein a length of the first ferromagnetic layer in a first direction parallel to a plane of deposition thereof is greater than a length of the electrically conductive layer in the first direction such that a first end of the first ferromagnetic layer extends beyond an end of the electrically conductive layer in the first direction, wherein an electrical current enters or exits the end of the first ferromagnetic layer that extends beyond the end of the electrically conductive layer in the first direction. Additional transducer structures, and systems implementing such transducers, are also disclosed.

Abstract translation: 根据一个实施例的换能器包括第一铁磁层; 第二铁磁层; 以及定位在铁磁层之间的导电层; 其中所述第一铁磁层在平行于其沉积平面的第一方向上的长度大于所述导电层在所述第一方向上的长度，使得所述第一铁磁层的第一端延伸超过所述电 导电层，其中电流进入或离开在第一方向延伸超过导电层的端部的第一铁磁层的端部。 还公开了附加的换能器结构和实现这种换能器的系统。

公开(公告)号：US08325450B2

公开(公告)日：2012-12-04

申请号：US12332010

申请日：2008-12-10

Applicant: Ying Hong ,  Kochan Ju ,  Tsann Lin ,  Ching Hwa Tsang

Inventor： Ying Hong ,  Kochan Ju ,  Tsann Lin ,  Ching Hwa Tsang

IPC: G01B5/66

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  Y10T428/1114

Abstract: A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.

Abstract translation: 一个实施例中的磁性结构包括隧道势垒层; 自由层 以及所述隧道势垒层和所述自由层之间的缓冲层，其中所述隧道势垒层在与其沉积平面平行的方向上的横截面面积大于所述自由层在平行于所述隧道势垒层的方向上的横截面积 其沉积平面，其中在平行于其沉积平面的方向上的缓冲层的横截面面积大于在平行于其沉积平面的方向上的自由层的横截面面积。 还介绍了其他系统和方法。

公开(公告)号：US07649711B2

公开(公告)日：2010-01-19

申请号：US10977446

申请日：2004-10-29

Applicant: Kuok San Ho ,  Yimin Hsu ,  Ching Hwa Tsang

Inventor： Kuok San Ho ,  Yimin Hsu ,  Ching Hwa Tsang

IPC: G11B5/147

CPC classification number: G11B5/3116 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3146

Abstract: A double notched magnetic structure for use in a magnetic head for avoiding stray field writing. The structure could be a magnetic shield, magnetic pole of a write head or some other magnetic structure used in a magnetic head of a magnetic recording system, and has notches formed at both the front end (adjacent to the ABS) and at the back end (away from the ABS). The notches at the front end form a forward protruding portions that performs the necessary function of the structure, such as magnetic shielding, and has laterally extending recessed portions (recessed by the front notches) that move the flux focal points of the structure away from the ABS to avoid stray field writing. The back notches form a backward extending portion that affects the geometry of the structure to prevent the focusing of magnetic flux caused by stray magnetic fields having a component perpendicular to the ABS.

Abstract translation: 用于磁头中的双切口磁结构，用于避免杂散场写入。 该结构可以是磁屏蔽，写磁头的磁极或磁记录系统的磁头中使用的一些其它磁性结构，并且在前端（邻近ABS）和后端形成有缺口 （远离ABS）。 前端的凹口形成一个向前突出的部分，其执行诸如磁屏蔽的结构的必要功能，并且具有横向延伸的凹陷部分（由凹槽凹陷），该凹陷部分将结构的通量焦点移动离开 ABS避免杂散场写入。 后凹口形成一个向后延伸部分，该部分影响结构的几何形状，以防止由具有垂直于ABS的分量的杂散磁场引起的磁通聚焦。

公开(公告)号：US07616403B2

公开(公告)日：2009-11-10

申请号：US10977315

申请日：2004-10-29

Applicant: Kuok San Ho ,  Yimin Hsu ,  Masafumi Mochizuki ,  Ching Hwa Tsang ,  Roger Wood

Inventor： Kuok San Ho ,  Yimin Hsu ,  Masafumi Mochizuki ,  Ching Hwa Tsang ,  Roger Wood

IPC: G11B5/127 ,  G11B5/147

CPC classification number: G11B5/1278 ,  G11B5/3116 ,  G11B5/315

Abstract: Embodiments of the present invention are directed to structures of a recording head having a winged design for reducing corner stray magnetic fields. In one embodiment, the present invention comprises a magnetic recording head comprising a plurality of components. In embodiments of the present invention at least one of the plurality of components comprises a surface exposed to an air bearing surface when in operation with a recording medium. The surface exposed to the air bearing surface comprises notched edges for constraining corner stray magnetic fields associated therewith.

Abstract translation: 本发明的实施例涉及具有用于减少拐角杂散磁场的翼形设计的记录头的结构。 在一个实施例中，本发明包括一个包括多个部件的磁记录头。 在本发明的实施例中，多个部件中的至少一个部件包括当与记录介质一起工作时暴露于空气轴承表面的表面。 暴露于空气轴承表面的表面包括用于约束与其相关的拐角杂散磁场的切口边缘。

公开(公告)号：US20090168235A1

公开(公告)日：2009-07-02

申请号：US11965663

申请日：2007-12-27

Applicant: Kochan Ju ,  Ching Hwa Tsang

Inventor： Kochan Ju ,  Ching Hwa Tsang

IPC: G11B5/127

CPC classification number: G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

Abstract: CPP read sensors and associated methods of fabrication are described that provide lateral spreading of a sense current along the length of an AFM layer of the read sensor. Winged regions (i.e., extended portions) are added to the layers of a CPP sensor stack to induce lateral spreading of the sense current in the AFM layer. Particularly, the pinned layer and the AFM layer have widths greater than the other layers of the sensor stack. Further, the pinned layer comprises multiple layers of materials, with a first layer of material closer to the AFM layer having a lower conductivity and/or a lower spin dependent scattering asymmetry than the second layer of material.

Abstract translation: 描述了CPP读取传感器和相关的制造方法，其提供沿着读取传感器的AFM层的长度的感测电流的横向扩展。 翼型区域（即，延伸部分）被添加到CPP传感器堆叠的层中以引起感测电流在AFM层中的横向扩展。 特别地，钉扎层和AFM层的宽度大于传感器堆叠的其它层。 此外，被钉扎层包括多层材料，其中具有比第二层材料更低的导电性和/或更低的自旋依赖散射不对称性的更接近AFM层的材料的第一层。

公开(公告)号：US07420787B2

公开(公告)日：2008-09-02

申请号：US11204973

申请日：2005-08-15

Applicant: James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

Inventor： James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

Abstract: A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments.

公开(公告)号：US07369371B2

公开(公告)日：2008-05-06

申请号：US11204452

申请日：2005-08-15

Applicant: James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

Inventor： James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

IPC: G11B5/33

CPC classification number: G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398

Abstract: A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments.

Abstract translation: 磁阻传感器具有延伸超过由传感器的自由层限定的条纹高度的钉扎层。 延伸的钉扎层具有强烈的形状诱导的各向异性，保持钉扎层力矩的钉扎。 被钉扎层的延伸部分具有超过条带高度的侧面，其在条纹高度内完全与传感器的侧面对准。 通过使用掩模结构用于多于一个制造阶段的制造方法，可以实现这种完美的对准，从而消除了对多个掩模对准的需要。

公开(公告)号：US07253991B2

公开(公告)日：2007-08-07

申请号：US10836918

申请日：2004-04-30

Applicant: Robert E. Fontana, Jr. ,  Kuok San Ho ,  Ching Hwa Tsang

Inventor： Robert E. Fontana, Jr. ,  Kuok San Ho ,  Ching Hwa Tsang

IPC: G11B5/127 ,  G11B5/31

CPC classification number: G11B5/315 ,  G11B5/10 ,  G11B5/1278

Abstract: A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.

Abstract translation: 描述了不需要研磨的用于垂直记录的磁头（滑块）。 该头部具有平行于晶片表面的空气轴承表面。 线圈和极片由平行于空气轴承表面设置的薄膜形成。 标准光刻技术可用于定义形状，间隙和极片尺寸。 可以形成非直线形状; 例如，围绕写入极片区域的侧面屏蔽。 主回极片和返回极片的厚度由沉积过程而不是研磨来控制。 用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。

公开(公告)号：US07161773B2

公开(公告)日：2007-01-09

申请号：US11075079

申请日：2005-03-07

Applicant: Robert Edward Fontana, Jr. ,  Kuok San Ho ,  Tao Pan ,  Ching Hwa Tsang

Inventor： Robert Edward Fontana, Jr. ,  Kuok San Ho ,  Tao Pan ,  Ching Hwa Tsang

IPC: G11B5/39 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: Several embodiments of a sense current perpendicular to the planes of the sensor (CPP) and flux guide type of read head has a gap between first and second shield layers at an air bearing surface (ABS) where the flux guide is located which is less than a gap between the first and second shield layers at a recessed location where the sensor is located. This reduced gap increases the linear bit density capability of the read head. A longitudinal bias stack (LBS) is located in the sensor stack. Several unique methods of construction are described for forming the magnetic head assemblies.

Abstract translation: 垂直于传感器（CPP）的平面的感测电流和读取头的通量引导类型的几个实施例在通量指示器所在的空气轴承表面（ABS）处具有小于第一和第二屏蔽层的空隙 第一和第二屏蔽层之间在传感器所在的凹陷位置处的间隙。 这种减小的间隙增加了读取头的线性位密度能力。 纵向偏置堆栈（LBS）位于传感器堆叠中。 描述了用于形成磁头组件的几种独特的结构方法。

公开(公告)号：US06847510B2

公开(公告)日：2005-01-25

申请号：US10256722

申请日：2002-09-27

Applicant: Jeffrey R. Childress ,  Robert E. Fontana, Jr. ,  Kuok San Ho ,  Ching Hwa Tsang

Inventor： Jeffrey R. Childress ,  Robert E. Fontana, Jr. ,  Kuok San Ho ,  Ching Hwa Tsang

IPC: G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  G11C11/16

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/3909 ,  H01L43/08

Abstract: A magnetic tunnel junction (MTJ) device usable as a magnetic memory cell or magnetoresistive sensor, such as a MTJ read head for magnetic recording, has the free ferromagnetic layer located on the bottom of the device, the bottom free layer being formed on a special underlayer. The MTJ read head may be a flux-guided head that uses the free layer as a flux guide for directing magnetic flux from the magnetic media to the sensing region of the MTJ. The special underlayer for the growth of the free layer is an alloy comprising Mn, one of Pt, Ni, Ir and Os, and an additive X selected from Ta, Al, Ti, Cu, Cr and V. Without the additive, the underlayer alloy is antiferromagnetic. The additive is present in an amount sufficient to render the alloy to have no magnetic ordering, i.e., it is neither antiferromagnetic nor ferromagnetic, but without substantially affecting the preferred crystalline texture and unit cell size so that the underlayer is well-suited as a growth-enhancing underlayer for the free layer.

Abstract translation: 可用作磁存储单元或磁阻传感器（例如用于磁记录的MTJ读头）的磁隧道结（MTJ）器件具有位于器件底部的自由铁磁层，底部自由层形成于特殊的 底层 MTJ读头可以是磁通引导头，其使用自由层作为磁通引导件，用于将磁通量从磁介质引导到MTJ的感测区域。 用于生长自由层的特殊底层是包含Mn，Pt，Ni，Ir和Os之一的合金，以及选自Ta，Al，Ti，Cu，Cr和V的添加剂X.没有添加剂，底层 合金是反铁磁的。 添加剂的存在量足以使合金不具有磁性排列，即它既不是反铁磁性的也不是铁磁性的，但是基本上不影响优选的晶体结构和晶胞尺寸，使得底层非常适合作为生长 - 增强自由层的底层。