公开(公告)号：US20120229174A1

公开(公告)日：2012-09-13

申请号：US13099380

申请日：2011-05-03

申请人： Chun Shiah ,  Hao-Jan Yang ,  Ching-Ying Hsu

发明人： Chun Shiah ,  Hao-Jan Yang ,  Ching-Ying Hsu

IPC分类号： H03K3/00

CPC分类号： H03K19/018521 ,  H03K19/09482

摘要： An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor.

摘要翻译： 输出级电路包括第一P型金属氧化物半导体晶体管，第二P型金属氧化物半导体晶体管，N型金属氧化物半导体晶体管和电流源。 第一P型金属氧化物半导体晶体管的第三端子的电压是第一电压减去第一P型金属氧化物半导体晶体管的第一端子和第二端子之间的电压降。 N型金属氧化物半导体晶体管耦合在第一P型金属氧化物半导体晶体管的第三端子与电流源之间。 第二P型金属氧化物半导体晶体管的第二端子耦合到第一P型金属氧化物半导体晶体管的第三端子。 当N型金属氧化物半导体晶体管的第二端子接收到反冲信号时，流过第二P型金属氧化物半导体晶体管的驱动电流与第一P型金属氧化物半导体晶体管的第三端子的电压相关， 型金属氧化物半导体晶体管。

公开(公告)号：US08536903B2

公开(公告)日：2013-09-17

申请号：US13099380

申请日：2011-05-03

申请人： Chun Shiah ,  Hao-Jan Yang ,  Ching-Ying Hsu

发明人： Chun Shiah ,  Hao-Jan Yang ,  Ching-Ying Hsu

IPC分类号： H03B19/06

CPC分类号： H03K19/018521 ,  H03K19/09482

摘要： An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor.

摘要翻译： 输出级电路包括第一P型金属氧化物半导体晶体管，第二P型金属氧化物半导体晶体管，N型金属氧化物半导体晶体管和电流源。 第一P型金属氧化物半导体晶体管的第三端子的电压是第一电压减去第一P型金属氧化物半导体晶体管的第一端子和第二端子之间的电压降。 N型金属氧化物半导体晶体管耦合在第一P型金属氧化物半导体晶体管的第三端子与电流源之间。 第二P型金属氧化物半导体晶体管的第二端子耦合到第一P型金属氧化物半导体晶体管的第三端子。 当N型金属氧化物半导体晶体管的第二端子接收到反冲信号时，流过第二P型金属氧化物半导体晶体管的驱动电流与第一P型金属氧化物半导体晶体管的第三端子的电压相关， 型金属氧化物半导体晶体管。