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    Photosensitive material and method of lithography
    2.
    发明授权
    Photosensitive material and method of lithography 有权
    感光材料和光刻方法

    公开(公告)号：US09213234B2

    公开(公告)日：2015-12-15

    申请号：US13486697

    申请日：2012-06-01

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/004 ,  G03F7/11

    CPC classification number: G03F7/16 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11

    Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.

    Abstract translation: 感光材料和形成图案的方法，其包括提供可操作以漂浮到由感光材料形成的层的顶部区域的感光材料的组分的组合物。 在一个实例中，感光层包括具有氟原子的第一组分（例如，氟烷基）。 在形成感光层之后，第一部件漂浮到感光层的顶表面。 此后，对感光层进行图案化。

    Overlay mark and method of measuring the same
    4.
    发明授权
    Overlay mark and method of measuring the same 有权
    叠加标记和测量方法

    公开(公告)号：US08908181B2

    公开(公告)日：2014-12-09

    申请号：US13536855

    申请日：2012-06-28

    Applicant: Chen-Yu Chen ,  Ming-Feng Shieh ,  Ching-Yu Chang

    Inventor： Chen-Yu Chen ,  Ming-Feng Shieh ,  Ching-Yu Chang

    IPC: G01B11/00

    CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L21/302 ,  H01L29/0649 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A device having an overlay mark over a substrate and a method of adjusting multi-layer overlay alignment using the overlay mark for accuracy are disclosed. The overlay mark includes a first feature in a first layer, having a plurality of first alignment segments substantially parallel to each other extending only along an X direction; a second feature in a second layer over the first layer, having a plurality of second alignment segments substantially parallel to each other extending along a Y direction different from the X direction; and a third feature in a third layer over the second layer, having a plurality of third alignment segments substantially parallel to each other extending along the X direction and a plurality of fourth alignment segments substantially parallel to each other extending along the Y direction.

    Abstract translation: 公开了一种在衬底上具有覆盖标记的器件以及使用覆盖标记来精确调整多层覆盖对准的方法。 覆盖标记包括第一层中的第一特征，具有基本上彼此平行的多个第一对准段，其仅沿着X方向延伸; 在第一层上的第二层中的第二特征，具有沿着与X方向不同的Y方向彼此平行的多个第二对准段; 以及在第二层上的第三层中的第三特征，具有沿着X方向彼此基本平行的多个第三对准段和沿Y方向延伸的彼此大致平行的多个第四对准段。

    Selective bias compensation for patterning steps in CMOS processes
    5.
    发明授权
    Selective bias compensation for patterning steps in CMOS processes 有权
    CMOS工艺中图案化步骤的选择性偏置补偿

    公开(公告)号：US08795540B2

    公开(公告)日：2014-08-05

    申请号：US13335618

    申请日：2011-12-22

    Applicant: Ming-Feng Shieh ,  Ching-Yu Chang

    Inventor： Ming-Feng Shieh ,  Ching-Yu Chang

    IPC: C03C15/00 ,  H01L21/033

    CPC classification number: H01L21/0337 ,  H01L21/0273

    Abstract: A method includes forming a photo resist pattern, and performing a light-exposure on a first portion of the photo resist pattern, wherein a second portion of the photo resist pattern is not exposed to light. A photo-acid reactive material is coated on the first portion and the second portion of the photo resist pattern. The photo-acid reactive material reacts with the photo resist pattern to form a film. Portions of the photo-acid reactive material that do not react with the photo resist pattern are then removed, and the film is left on the photo resist pattern.

    Abstract translation: 一种方法包括形成光致抗蚀剂图案，并对光致抗蚀剂图案的第一部分进行曝光，其中光致抗蚀剂图案的第二部分不暴露于光。 在光致抗蚀剂图案的第一部分和第二部分上涂覆光酸反应性材料。 光酸反应性材料与光致抗蚀剂图案反应形成膜。 然后除去与光致抗蚀剂图案不反应的光酸反应性材料的部分，并且将膜留在光致抗蚀剂图案上。

    Method of lithography
    6.
    发明授权
    Method of lithography 有权
    光刻方法

    公开(公告)号：US08609325B2

    公开(公告)日：2013-12-17

    申请号：US12915270

    申请日：2010-10-29

    Applicant: Fong-Cheng Lee ,  Ching-Yu Chang

    Inventor： Fong-Cheng Lee ,  Ching-Yu Chang

    IPC: G03F7/26

    CPC classification number: G03F7/2002 ,  G03F7/11 ,  G03F7/16 ,  G03F7/167 ,  G03F7/20

    Abstract: A lithography method of manufacturing integrated circuits is disclosed. A photoalignment layer is formed on a substrate. A treatment is performed to reorganize and align the photoalignment molecules. A photoresist layer may be formed on the photoalignment layer in a bi-layer separate coating or with the photoalignment layer in a bound-bind structure.

    Abstract translation: 公开了一种制造集成电路的光刻方法。 在基板上形成光取向层。 进行处理以重新组织和对准光对准分子。 光致抗蚀剂层可以形成在双层分离涂层中的光取向层上，或者在结合结合结构中形成在光取向层中。

    PHOTOSENSITIVE MATERIAL AND METHOD OF PHOTOLITHOGRAPHY
    7.
    发明申请
    PHOTOSENSITIVE MATERIAL AND METHOD OF PHOTOLITHOGRAPHY 有权
    感光材料和光刻方法

    公开(公告)号：US20130260311A1

    公开(公告)日：2013-10-03

    申请号：US13437674

    申请日：2012-04-02

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: G03F7/0397 ,  G03F7/2041 ,  G03F7/26 ,  G03F7/325

    Abstract: Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.

    Abstract translation: 描述了涉及感光材料在负色调显影剂中的溶解度的方法和材料。 感光材料可以包括大于50％的酸不稳定基团作为聚合物链的分支。 在另一个实施方案中，在曝光或照射之后对感光材料进行处理。 示例性的处理包括将基底施加到感光材料上。

    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130244434A1

    公开(公告)日：2013-09-19

    申请号：US13418589

    申请日：2012-03-13

    Applicant: Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

    Inventor： Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

    IPC: H01L21/312

    CPC classification number: H01L21/0332 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76837

    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic layer over the substrate. The organic layer is formed over the plurality of circuit devices. The method includes polishing the organic layer to planarize a surface of the organic layer. The organic layer is free of being thermally treated prior to the polishing. The organic material is un-cross-linked during the polishing. The method includes depositing a LT-film over the planarized surface of the organic layer. The depositing is performed at a temperature less than about 150 degrees Celsius. The depositing is also performed without using a spin coating process. The method includes forming a patterned photoresist layer over the LT-film.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成多个电路器件。 该方法包括在衬底上形成有机层。 有机层形成在多个电路装置上。 该方法包括抛光有机层以使有机层的表面平坦化。 有机层在抛光之前不需要进行热处理。 有机材料在抛光期间是未交联的。 该方法包括在有机层的平坦化表面上沉积LT膜。 沉积在小于约150摄氏度的温度下进行。 也可以不使用旋涂法进行沉积。 该方法包括在LT膜上形成图案化的光致抗蚀剂层。

    Water mark defect prevention for immersion lithography
    10.
    发明授权
    Water mark defect prevention for immersion lithography 有权
    浸渍光刻防水标识缺陷

    公开(公告)号：US07927779B2

    公开(公告)日：2011-04-19

    申请号：US11271639

    申请日：2005-11-10

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/004 ,  G03F7/028 ,  G03F7/039

    CPC classification number: G03F7/2041 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0392

    Abstract: A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.

    Abstract translation: 一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。 该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。 因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。

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