Apparatus and method for frequency generation
    1.
    发明授权
    Apparatus and method for frequency generation 有权
    用于频率发生的装置和方法

    公开(公告)号:US08810322B2

    公开(公告)日:2014-08-19

    申请号:US13295683

    申请日:2011-11-14

    IPC分类号: H03B1/00 H03B5/08 H03K3/354

    摘要: A wideband frequency generator has two or more oscillators for different frequency bands, disposed on the same die within a flip chip package. Coupling between inductors of the two oscillators is reduced by placing one inductor on the die and the other inductor on the package, separating the inductors by a solder bump diameter. The loosely coupled inductors allow manipulation of the LC tank circuit of one of the oscillators to increase the bandwidth of the other oscillator, and vice versa. Preventing undesirable mode of oscillation in one of the oscillators may be achieved by loading the LC tank circuit of the other oscillator with a large capacitance, such as the entire capacitance of the coarse tuning bank of the other oscillator. Preventing the undesirable mode may also be achieved by decreasing the quality factor of the other oscillator's LC tank and thereby increasing the losses in the tank circuit.

    摘要翻译: 宽带频率发生器具有用于不同频带的两个或更多个振荡器,在倒装芯片封装内设置在相同的芯片上。 将两个振荡器的电感器之间的耦合通过将一个电感器放置在芯片上而将另一个电感器放置在封装上,通过焊料凸块直径将电感器分离。 松耦合电感器允许操纵其中一个振荡器的LC振荡电路,以增加另一个振荡器的带宽,反之亦然。 可以通过将另一个振荡器的LC振荡电路加载到诸如另一个振荡器的粗调谐组的整个电容的大电容来实现在振荡器之一中防止不期望的振荡模式。 也可以通过降低另一个振荡器的LC槽的品质因数并从而增加储罐回路的损耗来实现防止不期望的模式。

    DRAIN-PUMPED SUB-HARMONIC MIXER FOR MILLIMETER WAVE APPLICATIONS
    2.
    发明申请
    DRAIN-PUMPED SUB-HARMONIC MIXER FOR MILLIMETER WAVE APPLICATIONS 有权
    用于MILLIMETER WAVE应用的排水辅助谐波混合器

    公开(公告)号:US20110183641A1

    公开(公告)日:2011-07-28

    申请号:US13046377

    申请日:2011-03-11

    IPC分类号: H04B1/16

    摘要: A sub-harmonic mixer includes a first transistor having a source and a drain and a second transistor having a source connected to the source of the first transistor and a drain connected to the drain of the first transistor. A mixing transistor is configured to be biased in a linear operating region. The mixing transistor includes a drain coupled to the sources of the first transistor and the second transistor. The mixing transistor has its drain driven by a signal at twice a local oscillator (LO) frequency and its gate driven by a radio frequency (RF) signal while the mixing transistor is biased in the linear region such that a process of frequency doubling and mixing are performed simultaneously.

    摘要翻译: 子谐波混合器包括具有源极和漏极的第一晶体管和具有连接到第一晶体管的源极的源极和连接到第一晶体管的漏极的漏极的第二晶体管。 混合晶体管被配置为在线性工作区域中偏置。 混合晶体管包括耦合到第一晶体管和第二晶体管的源极的漏极。 混合晶体管的漏极由本地振荡器(LO)频率的两倍的信号驱动,其栅极由射频(RF)信号驱动,而混合晶体管被偏置在线性区域中,使得频率倍增和混合的过程 同时进行。

    Adaptable mixer and local oscillator devices and methods
    3.
    发明授权
    Adaptable mixer and local oscillator devices and methods 有权
    适配混频器和本地振荡器器件及方法

    公开(公告)号:US08963610B2

    公开(公告)日:2015-02-24

    申请号:US13468696

    申请日:2012-05-10

    IPC分类号: G06F7/44 G06G7/12 H03D7/14

    摘要: An adaptable mixer device is operable in a first mode and a second mode and includes a first set of mixer units operable in the first mode and a second set of mixer units operable in the second mode. The second set of mixer units includes at least one mixer unit that is common to both the first set of mixer units and the second set of mixer units. The second set of mixer units also includes a plurality of mixer units that are not in the first set of mixer units. Similarly, the first set of mixer units including a plurality of mixer units that are not in the second set of mixer units.

    摘要翻译: 适应性混合器装置可在第一模式和第二模式中操作,并且包括可在第一模式下操作的第一组混频器单元和可在第二模式下操作的第二组混频器单元。 第二组混合器单元包括至少一个混合器单元,其对于第一组混合器单元和第二组混合器单元共同。 第二组混合器单元还包括不在第一组混合器单元中的多个混合器单元。 类似地,第一组混合器单元包括不在第二组混合器单元中的多个混合器单元。

    ADAPTABLE MIXER AND LOCAL OSCILLATOR DEVICES AND METHODS
    4.
    发明申请
    ADAPTABLE MIXER AND LOCAL OSCILLATOR DEVICES AND METHODS 有权
    适配混频器和本地振荡器器件及方法

    公开(公告)号:US20130300489A1

    公开(公告)日:2013-11-14

    申请号:US13468696

    申请日:2012-05-10

    IPC分类号: G06G7/12

    摘要: An adaptable mixer device is operable in a first mode and a second mode and includes a first set of mixer units operable in the first mode and a second set of mixer units operable in the second mode. The second set of mixer units includes at least one mixer unit that is common to both the first set of mixer units and the second set of mixer units. The second set of mixer units also includes a plurality of mixer units that are not in the first set of mixer units. Similarly, the first set of mixer units including a plurality of mixer units that are not in the second set of mixer units.

    摘要翻译: 适应性混合器装置可在第一模式和第二模式中操作,并且包括可在第一模式下操作的第一组混频器单元和可在第二模式下操作的第二组混频器单元。 第二组混合器单元包括至少一个混合器单元,其对于第一组混合器单元和第二组混合器单元共同。 第二组混合器单元还包括不在第一组混合器单元中的多个混合器单元。 类似地,第一组混合器单元包括不在第二组混合器单元中的多个混合器单元。

    Capacitor switching circuit
    5.
    发明授权
    Capacitor switching circuit 有权
    电容开关电路

    公开(公告)号:US08044739B2

    公开(公告)日:2011-10-25

    申请号:US12480966

    申请日:2009-06-09

    IPC分类号: H03B5/08

    摘要: A capacitance switching element includes first and second capacitors connected in series by transistors. The gates of the transistors are biased by a first signal through one set of resistors, and the sources and drains are biased by a second signal through a second set of resistors. The signals are level-shifted and may be complimentary. To turn the element ON, the first signal may be set to VDD and the second signal may be set to zero. To turn the element OFF, the first signal may be set to a multiple of VDD/2 and the second signal may be set to the multiple plus one of VDD/2. When the element is used in an oscillator tuning circuit, the voltage stress on the transistors is reduced and the transistors may be fabricated with thin oxide. The oscillator may be used in a transceiver of a cellular access terminal.

    摘要翻译: 电容开关元件包括由晶体管串联连接的第一和第二电容器。 晶体管的栅极通过一组电阻器通过第一信号偏置,并且源极和漏极通过第二组电阻器被第二信号偏置。 信号是水平位移的,可能是免费的。 为了打开元件,第一个信号可以设置为VDD,第二个信号可以设置为零。 要关闭元件,第一个信号可以设置为VDD / 2的倍数,第二个信号可以设置为VDD / 2的倍数。 当元件用于振荡器调谐电路时,晶体管上的电压应力降低,并且晶体管可以用薄氧化物制造。 振荡器可以用在蜂窝接入终端的收发机中。

    RF BUFFER CIRCUIT WITH DYNAMIC BIASING
    6.
    发明申请
    RF BUFFER CIRCUIT WITH DYNAMIC BIASING 失效
    具有动态偏置功能的射频缓冲电路

    公开(公告)号:US20110089991A1

    公开(公告)日:2011-04-21

    申请号:US12603379

    申请日:2009-10-21

    IPC分类号: H03K17/687

    摘要: An RF buffer circuit for a voltage controlled oscillator (VCO) includes dynamic biasing circuitry to selectively flip the phase of the output voltage waveform. In a CMOS implementation, a PMOS/NMOS pair is employed in an output path. During a high (voltage) swing mode condition, the phase of the output is flipped such that the output waveform is in phase with the voltages appearing at the gates of the PMOS/NMOS pair. The technique thereby reduces peak gate-to-drain voltages and allows for improved reliability of the MOS devices in a configuration amenable to low phase noise and low power consumption.

    摘要翻译: 用于压控振荡器(VCO)的RF缓冲电路包括用于选择性地翻转输出电压波形的相位的动态偏置电路。 在CMOS实现中,在输出路径中采用PMOS / NMOS对。 在高(电压)摆动模式条件期间,输出的相位被翻转,使得输出波形与PMOS / NMOS对的栅极处出现的电压同相。 因此,该技术降低了峰值栅极至漏极电压,并且允许在具有低相位噪声和低功耗的配置中提高MOS器件的可靠性。

    APPARATUS AND METHOD FOR FREQUENCY GENERATION
    7.
    发明申请
    APPARATUS AND METHOD FOR FREQUENCY GENERATION 有权
    用于频率发生的装置和方法

    公开(公告)号:US20100308924A1

    公开(公告)日:2010-12-09

    申请号:US12477651

    申请日:2009-06-03

    IPC分类号: H03B5/08

    摘要: A wideband frequency generator has two or more oscillators for different frequency bands, disposed on the same die within a flip chip package. Coupling between inductors of the two oscillators is reduced by placing one inductor on the die and the other inductor on the package, separating the inductors by a solder bump diameter. The loosely coupled inductors allow manipulation of the LC tank circuit of one of the oscillators to increase the bandwidth of the other oscillator, and vice versa. Preventing undesirable mode of oscillation in one of the oscillators may be achieved by loading the LC tank circuit of the other oscillator with a large capacitance, such as the entire capacitance of the coarse tuning bank of the other oscillator. Preventing the undesirable mode may also be achieved by decreasing the quality factor of the other oscillator's LC tank and thereby increasing the losses in the tank circuit.

    摘要翻译: 宽带频率发生器具有用于不同频带的两个或更多个振荡器,在倒装芯片封装内设置在相同的芯片上。 将两个振荡器的电感器之间的耦合通过将一个电感器放置在芯片上而将另一个电感器放置在封装上,通过焊料凸块直径将电感器分离。 松耦合电感器允许操纵其中一个振荡器的LC振荡电路,以增加另一个振荡器的带宽,反之亦然。 可以通过将另一个振荡器的LC振荡电路加载到诸如另一个振荡器的粗调谐组的整个电容的大电容来实现在振荡器之一中防止不期望的振荡模式。 也可以通过降低另一个振荡器的LC槽的品质因数并从而增加储罐回路的损耗来实现防止不期望的模式。

    RF buffer circuit with dynamic biasing
    8.
    发明授权
    RF buffer circuit with dynamic biasing 有权
    RF缓冲电路具有动态偏置

    公开(公告)号:US08415991B2

    公开(公告)日:2013-04-09

    申请号:US13406675

    申请日:2012-02-28

    IPC分类号: H03K3/00

    摘要: A method includes setting a mode of operation of a buffer circuit outputting an output signal. The mode of operation is set to a first mode of operation or a second mode of operation. The output signal is substantially in-phase with an input signal received by the buffer circuit when the mode of operation is the first mode. The output signal is substantially out of phase with the input signal when the mode of operation is the second mode.

    摘要翻译: 一种方法包括设置输出输出信号的缓冲电路的工作模式。 操作模式被设置为第一操作模式或第二操作模式。 当操作模式是第一模式时,输出信号与由缓冲电路接收的输入信号基本上同相。 当操作模式是第二模式时,输出信号与输入信号基本上不同相。

    APPARATUS AND METHOD FOR FREQUENCY GENERATION
    9.
    发明申请
    APPARATUS AND METHOD FOR FREQUENCY GENERATION 有权
    用于频率发生的装置和方法

    公开(公告)号:US20120068777A1

    公开(公告)日:2012-03-22

    申请号:US13295683

    申请日:2011-11-14

    IPC分类号: H03B5/12

    摘要: A wideband frequency generator has two or more oscillators for different frequency bands, disposed on the same die within a flip chip package. Coupling between inductors of the two oscillators is reduced by placing one inductor on the die and the other inductor on the package, separating the inductors by a solder bump diameter. The loosely coupled inductors allow manipulation of the LC tank circuit of one of the oscillators to increase the bandwidth of the other oscillator, and vice versa. Preventing undesirable mode of oscillation in one of the oscillators may be achieved by loading the LC tank circuit of the other oscillator with a large capacitance, such as the entire capacitance of the coarse tuning bank of the other oscillator. Preventing the undesirable mode may also be achieved by decreasing the quality factor of the other oscillator's LC tank and thereby increasing the losses in the tank circuit.

    摘要翻译: 宽带频率发生器具有用于不同频带的两个或更多个振荡器,在倒装芯片封装内设置在相同的芯片上。 将两个振荡器的电感器之间的耦合通过将一个电感器放置在芯片上而将另一个电感器放置在封装上,通过焊料凸块直径将电感器分离。 松耦合电感器允许操纵其中一个振荡器的LC振荡电路,以增加另一个振荡器的带宽,反之亦然。 可以通过将另一个振荡器的LC振荡电路加载到诸如另一个振荡器的粗调谐组的整个电容的大电容来实现在振荡器之一中防止不期望的振荡模式。 也可以通过降低另一个振荡器的LC槽的品质因数并从而增加储罐回路的损耗来实现防止不期望的模式。

    ENHANCING DEVICE RELIABILITY FOR VOLTAGE CONTROLLED OSCILLATOR (VCO) BUFFERS UNDER HIGH VOLTAGE SWING CONDITIONS
    10.
    发明申请
    ENHANCING DEVICE RELIABILITY FOR VOLTAGE CONTROLLED OSCILLATOR (VCO) BUFFERS UNDER HIGH VOLTAGE SWING CONDITIONS 有权
    在高电压条件下提高电压控制振荡器(VCO)缓冲器的设备可靠性

    公开(公告)号:US20100327986A1

    公开(公告)日:2010-12-30

    申请号:US12825221

    申请日:2010-06-28

    IPC分类号: H03B5/12 H03L5/00

    CPC分类号: H03L5/00 H03L7/099

    摘要: A circuit for a voltage controlled oscillator (VCO) buffer is described. The circuit includes a first capacitor connected to an input of the VCO buffer that is connected to a VCO core. The circuit also includes a second capacitor connected to the input of the VCO buffer and the gate of a p-type metal-oxide-semiconductor field effect (PMOS) transistor. The circuit further includes a first switch connected to the first capacitor and the gate of the PMOS transistor. The circuit also includes a third capacitor connected to the input of the VCO buffer. The circuit further includes a fourth capacitor connected to the input of the VCO buffer and the gate of an n-type metal-oxide-semiconductor field effect (NMOS) transistor. The circuit also includes a second switch connected to the third capacitor and the gate of the NMOS transistor.

    摘要翻译: 描述了用于压控振荡器(VCO)缓冲器的电路。 电路包括连接到VCO缓冲器的输入的第一电容器,其连接到VCO核心。 电路还包括连接到VCO缓冲器的输入端和p型金属氧化物半导体场效应(PMOS)晶体管的栅极的第二电容器。 电路还包括连接到第一电容器和PMOS晶体管的栅极的第一开关。 该电路还包括连接到VCO缓冲器的输入的第三电容器。 电路还包括连接到VCO缓冲器的输入端和n型金属氧化物半导体场效应(NMOS)晶体管的栅极的第四电容器。 电路还包括连接到第三电容器和NMOS晶体管的栅极的第二开关。