HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR WITH STABLE THRESHOLD VOLTAGE AND RELATED MANUFACTURING METHOD
    1.
    发明申请
    HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR WITH STABLE THRESHOLD VOLTAGE AND RELATED MANUFACTURING METHOD 有权
    具有稳定阈值电压的高压金属氧化物半导体晶体管及相关制造方法

    公开(公告)号:US20120080752A1

    公开(公告)日:2012-04-05

    申请号:US12898668

    申请日:2010-10-05

    CPC classification number: H01L21/26586 H01L29/6659 H01L29/7833

    Abstract: A high voltage metal-oxide-semiconductor (HVMOS) transistor includes a gate poly, wherein a channel is formed in an area projected from the gate poly in a thickness direction when the HVMOS is activated; two carrier drain drift regions, adjacent to the area projected from the gate poly, wherein at least one of the carrier drain drift regions has a gradient doping concentration; and two carrier plus regions, respectively locate within the two carrier drain drift regions, wherein the two carrier plus regions and the two carrier drain drift regions are communicating with each other through the channel when the HVMOS is activated.

    Abstract translation: 高压金属氧化物半导体(HVMOS)晶体管包括栅极聚合物,其中当HVMOS被激活时,在厚度方向上从栅极poly突出的区域中形成沟道; 两个载波漏极漂移区,邻近从栅极poly投影的区域,其中至少一个载流子漂移区具有梯度掺杂浓度; 和两个载波加区域分别位于两个载波漏极漂移区域内,其中当HVMOS被激活时,两个载波加区域和两个载波漏极漂移区域通过信道彼此通信。

    Nasal filter
    2.
    发明授权
    Nasal filter 有权
    鼻过滤器

    公开(公告)号:US08347885B2

    公开(公告)日:2013-01-08

    申请号:US12950132

    申请日:2010-11-19

    Applicant: Chun-Yu Chou

    Inventor: Chun-Yu Chou

    CPC classification number: A61M16/105 A61M16/107 A61M2210/0618 A62B23/06

    Abstract: A nasal filter includes a main body, a cover, and a filtering medium. The main body has a hollow cylinder, a boss connected to a spherical member, a flange, and a plurality of internal guide vanes. The hollow cylinder has a front and a rear opening. A first threaded portion is formed on the outer surface at the front end portion of the hollow cylinder. A thru hole is formed on the cover and aligns correspondingly to the front opening of the hollow cylinder. A second threaded portion is formed on the inner surface of the cover for mating to the first threaded portion on the hollow cylinder. The filtering medium is held in between the cover and the hollow cylinder and covers the thru hole. A filter pad is further included to provide additional functions. Accordingly, the nasal filter offers air purification and doe not cover the mouth.

    Abstract translation: 鼻过滤器包括主体,盖和过滤介质。 主体具有中空圆柱体,连接到球形部件的凸台,凸缘和多个内部导向叶片。 中空圆筒具有前开口和后开口。 第一螺纹部分形成在中空圆筒的前端部分的外表面上。 在盖上形成通孔,并对应于中空圆筒的前开口。 第二螺纹部分形成在盖的内表面上,用于与中空圆柱体上的第一螺纹部分配合。 过滤介质保持在盖和中空圆筒之间并覆盖通孔。 还包括一个滤垫以提供附加功能。 因此,鼻过滤器提供空气净化,并且不覆盖口。

    NASAL FILTER
    3.
    发明申请
    NASAL FILTER 有权
    NASAL过滤器

    公开(公告)号:US20120125340A1

    公开(公告)日:2012-05-24

    申请号:US12950132

    申请日:2010-11-19

    Applicant: CHUN-YU CHOU

    Inventor: CHUN-YU CHOU

    CPC classification number: A61M16/105 A61M16/107 A61M2210/0618 A62B23/06

    Abstract: A nasal filter includes a main body, a cover, and a filtering medium. The main body has a hollow cylinder, a boss connected to a spherical member, a flange, and a plurality of internal guide vanes. The hollow cylinder has a front and a rear opening. A first threaded portion is formed on the outer surface at the front end portion of the hollow cylinder. A thru hole is formed on the cover and aligns correspondingly to the front opening of the hollow cylinder. A second threaded portion is formed on the inner surface of the cover for mating to the first threaded portion on the hollow cylinder. The filtering medium is held in between the cover and the hollow cylinder and covers the thru hole. A filter pad is further included to provide additional functions. Accordingly, the nasal filter offers air purification and doe not cover the mouth.

    Abstract translation: 鼻过滤器包括主体,盖和过滤介质。 主体具有中空圆柱体,连接到球形部件的凸台,凸缘和多个内部导向叶片。 中空圆筒具有前开口和后开口。 第一螺纹部分形成在中空圆筒的前端部分的外表面上。 在盖上形成通孔,并对应于中空圆筒的前开口。 第二螺纹部分形成在盖的内表面上,用于与中空圆柱体上的第一螺纹部分配合。 过滤介质保持在盖和中空圆筒之间并覆盖通孔。 还包括一个滤垫以提供附加功能。 因此,鼻过滤器提供空气净化,并且不覆盖嘴。

    High voltage metal-oxide-semiconductor transistor with stable threshold voltage and related manufacturing method
    4.
    发明授权
    High voltage metal-oxide-semiconductor transistor with stable threshold voltage and related manufacturing method 有权
    具有稳定阈值电压的高压金属氧化物半导体晶体管及相关制造方法

    公开(公告)号:US08278709B2

    公开(公告)日:2012-10-02

    申请号:US12898668

    申请日:2010-10-05

    CPC classification number: H01L21/26586 H01L29/6659 H01L29/7833

    Abstract: A high voltage metal-oxide-semiconductor (HVMOS) transistor includes a gate poly, wherein a channel is formed in an area projected from the gate poly in a thickness direction when the HVMOS is activated; two carrier drain drift regions, adjacent to the area projected from the gate poly, wherein at least one of the carrier drain drift regions has a gradient doping concentration; and two carrier plus regions, respectively locate within the two carrier drain drift regions, wherein the two carrier plus regions and the two carrier drain drift regions are communicating with each other through the channel when the HVMOS is activated.

    Abstract translation: 高压金属氧化物半导体(HVMOS)晶体管包括栅极聚合物,其中当HVMOS被激活时,在厚度方向上从栅极poly突出的区域中形成沟道; 两个载波漏极漂移区,邻近从栅极poly投影的区域,其中至少一个载流子漂移区具有梯度掺杂浓度; 和两个载波加区域分别位于两个载波漏极漂移区域内,其中当HVMOS被激活时,两个载波加区域和两个载波漏极漂移区域通过信道彼此通信。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20110195553A1

    公开(公告)日:2011-08-11

    申请号:US12701623

    申请日:2010-02-08

    CPC classification number: H01L29/1083 H01L29/7833

    Abstract: A method of fabricating a semiconductor device is provided. The method comprises: forming a first layer; forming a P-well on the first layer; forming an isolation region in the P-well; performing an extra implantation on a surface between the P-well and the first layer; and forming a source/drain region. The method of the present invention can solve the punch through problem of the conventional iso-NMOS transistor without increasing cost.

    Abstract translation: 提供一种制造半导体器件的方法。 该方法包括:形成第一层; 在第一层上形成P阱; 在P阱中形成隔离区; 在P阱和第一层之间的表面上执行额外的注入; 并形成源/漏区。 本发明的方法可以解决传统的等效NMOS晶体管的冲孔问题,而不增加成本。

    Pin leading device
    6.
    发明授权
    Pin leading device 失效
    引脚引导装置

    公开(公告)号:US5933943A

    公开(公告)日:1999-08-10

    申请号:US897521

    申请日:1997-07-21

    Inventor: Shu-Chun Yu Chou

    CPC classification number: H01L21/68742 H01R43/26 Y10T29/53183

    Abstract: A pin leading device (1) comprises a hollow plate holder (8) having a hollow frame (9) and a hollow cylinder (10) disposed on the hollow frame (9), a threaded hole (101) formed in the hollow cylinder (10), a sleeve (2) having a recess hole (21) and a threaded end (20) engaging with the threaded hole (101), an elastic spring (3) inserted in an upper portion of the sleeve (2), a rod (4) inserted in the recess hole (21) and surrounded by the elastic spring (3), and a press head (5) disposed on an upper end of the rod (4). The hollow frame (9) has two opposite lateral plates (90) defining a spacing on a bottom of the hollow frame (9). A pin leading plate (6) is disposed on the bottom of the hollow frame (9). The pin leading plate (6) has a center hole (60) and two serrated lateral sides (7). The spacings between the lateral plates (90) of the hollow frame (9) and the lateral sides (7) of the leading plate (6) receive two rows of pins of an integrated circuit component. When the press head (5) is pressed downward, the pins are bent.

    Abstract translation: 引脚引导装置(1)包括具有中空框架(9)的空心板保持器(8)和设置在中空框架(9)上的中空圆柱体(10),形成在中空圆柱体中的螺纹孔(101) 10),具有凹部孔(21)的套筒(2)和与螺纹孔(101)接合的螺纹端部(20),插入到套筒(2)的上部的弹性弹簧(3) 杆(4)插入到凹部孔(21)中并被弹性弹簧(3)包围,以及设置在杆(4)的上端的按压头(5)。 中空框架(9)具有在中空框架(9)的底部上限定间隔的两个相对的侧板(90)。 销引导板(6)设置在中空框架(9)的底部。 销引导板(6)具有中心孔(60)和两个锯齿状侧边(7)。 中空框架(9)的侧板(90)和前板(6)的侧边(7)之间的间隔接收两排集成电路部件的销。 当压头(5)向下压时,销弯曲。

    Multifunctional IC hand tool
    7.
    发明授权
    Multifunctional IC hand tool 失效
    多功能IC手动工具

    公开(公告)号:US5875544A

    公开(公告)日:1999-03-02

    申请号:US933047

    申请日:1997-09-18

    Inventor: Shu Chun Yu Chou

    Abstract: An IC hand tool is composed of a base, a main body, a press rod, and two holding arms. The base is provided with a receiving space for locating an IC element. The main body is fastened at one end thereof with the base and provided with an axial through hole in which the press rod is located such that a cap of the press rod is located outside the top end of the main body and that a leg block of the press rod is located in the receiving space of the base. The main body is further provided with two protruded portions and a plurality of fastening lugs for fastening the holding arms pivotally. The holding arms are provided respectively at the bottom end thereof with a hooked body for holding securely the IC element which is located in the receiving space of the base. The IC element is handled by mainpulating the press rod with hand of an operator.

    Abstract translation: IC手动工具由基座,主体,压杆和两个固定臂组成。 基座设置有用于定位IC元件的接收空间。 主体在其一端与基座紧固,并设置有轴向通孔,压杆位于该轴向通孔中,使得压杆的盖位于主体的顶端的外侧, 压杆位于基座的接收空间中。 主体还设置有两个突出部分和多个用于可枢转地紧固保持臂的紧固凸耳。 保持臂在其底端分别设置有用于牢固地保持位于基座的接收空间中的IC元件的钩体。 IC元件通过用操作者的手将压杆整理来处理。

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