Abstract:
A high voltage metal-oxide-semiconductor (HVMOS) transistor includes a gate poly, wherein a channel is formed in an area projected from the gate poly in a thickness direction when the HVMOS is activated; two carrier drain drift regions, adjacent to the area projected from the gate poly, wherein at least one of the carrier drain drift regions has a gradient doping concentration; and two carrier plus regions, respectively locate within the two carrier drain drift regions, wherein the two carrier plus regions and the two carrier drain drift regions are communicating with each other through the channel when the HVMOS is activated.
Abstract:
A nasal filter includes a main body, a cover, and a filtering medium. The main body has a hollow cylinder, a boss connected to a spherical member, a flange, and a plurality of internal guide vanes. The hollow cylinder has a front and a rear opening. A first threaded portion is formed on the outer surface at the front end portion of the hollow cylinder. A thru hole is formed on the cover and aligns correspondingly to the front opening of the hollow cylinder. A second threaded portion is formed on the inner surface of the cover for mating to the first threaded portion on the hollow cylinder. The filtering medium is held in between the cover and the hollow cylinder and covers the thru hole. A filter pad is further included to provide additional functions. Accordingly, the nasal filter offers air purification and doe not cover the mouth.
Abstract:
A nasal filter includes a main body, a cover, and a filtering medium. The main body has a hollow cylinder, a boss connected to a spherical member, a flange, and a plurality of internal guide vanes. The hollow cylinder has a front and a rear opening. A first threaded portion is formed on the outer surface at the front end portion of the hollow cylinder. A thru hole is formed on the cover and aligns correspondingly to the front opening of the hollow cylinder. A second threaded portion is formed on the inner surface of the cover for mating to the first threaded portion on the hollow cylinder. The filtering medium is held in between the cover and the hollow cylinder and covers the thru hole. A filter pad is further included to provide additional functions. Accordingly, the nasal filter offers air purification and doe not cover the mouth.
Abstract:
A high voltage metal-oxide-semiconductor (HVMOS) transistor includes a gate poly, wherein a channel is formed in an area projected from the gate poly in a thickness direction when the HVMOS is activated; two carrier drain drift regions, adjacent to the area projected from the gate poly, wherein at least one of the carrier drain drift regions has a gradient doping concentration; and two carrier plus regions, respectively locate within the two carrier drain drift regions, wherein the two carrier plus regions and the two carrier drain drift regions are communicating with each other through the channel when the HVMOS is activated.
Abstract:
A method of fabricating a semiconductor device is provided. The method comprises: forming a first layer; forming a P-well on the first layer; forming an isolation region in the P-well; performing an extra implantation on a surface between the P-well and the first layer; and forming a source/drain region. The method of the present invention can solve the punch through problem of the conventional iso-NMOS transistor without increasing cost.
Abstract:
A pin leading device (1) comprises a hollow plate holder (8) having a hollow frame (9) and a hollow cylinder (10) disposed on the hollow frame (9), a threaded hole (101) formed in the hollow cylinder (10), a sleeve (2) having a recess hole (21) and a threaded end (20) engaging with the threaded hole (101), an elastic spring (3) inserted in an upper portion of the sleeve (2), a rod (4) inserted in the recess hole (21) and surrounded by the elastic spring (3), and a press head (5) disposed on an upper end of the rod (4). The hollow frame (9) has two opposite lateral plates (90) defining a spacing on a bottom of the hollow frame (9). A pin leading plate (6) is disposed on the bottom of the hollow frame (9). The pin leading plate (6) has a center hole (60) and two serrated lateral sides (7). The spacings between the lateral plates (90) of the hollow frame (9) and the lateral sides (7) of the leading plate (6) receive two rows of pins of an integrated circuit component. When the press head (5) is pressed downward, the pins are bent.
Abstract:
An IC hand tool is composed of a base, a main body, a press rod, and two holding arms. The base is provided with a receiving space for locating an IC element. The main body is fastened at one end thereof with the base and provided with an axial through hole in which the press rod is located such that a cap of the press rod is located outside the top end of the main body and that a leg block of the press rod is located in the receiving space of the base. The main body is further provided with two protruded portions and a plurality of fastening lugs for fastening the holding arms pivotally. The holding arms are provided respectively at the bottom end thereof with a hooked body for holding securely the IC element which is located in the receiving space of the base. The IC element is handled by mainpulating the press rod with hand of an operator.