公开(公告)号：US07564660B2

公开(公告)日：2009-07-21

申请号：US11804241

申请日：2007-05-17

申请人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

发明人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

公开(公告)号：US07234228B2

公开(公告)日：2007-06-26

申请号：US10308597

申请日：2002-12-03

申请人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

发明人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

IPC分类号： G11B5/187 ,  G11B5/39

CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

摘要翻译： 一种形成具有新型种子层和合成反铁磁固定层的底部自旋阀传感器元件的方法。 该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。 在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。 可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。 此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。