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33 条记录 (耗时 0.02 秒)

    Biochip type device
    3.
    发明授权
    Biochip type device 失效
    生物芯片型设备

    公开(公告)号：US07306766B2

    公开(公告)日：2007-12-11

    申请号：US10849141

    申请日：2004-05-20

    申请人： Claude Weisbuch ,  Henri Benisty

    发明人： Claude Weisbuch ,  Henri Benisty

    IPC分类号： G01N21/01 ,  G01N21/64

    CPC分类号： G01N21/7703 ,  G01N21/648

    摘要： An improved biochip type device comprising a substrate (10) including an intermediate non-absorbent multilayer mirror (12) covered by a layer (14) of high refractive index material having chromophore elements (16) fixed thereon, the layer (14) further including feature (24) for extracting guided-mode light in order to recover the light emitted by the chromophore elements (16) into the layer (14) in response to light excitation, and direct the light to detection and measurement means.

    摘要翻译： 一种改进的生物芯片型装置，包括：衬底（10），包括由固定有发色团元件（16）的高折射率材料层（14）覆盖的中间非吸收性多层反射镜（12），所述层（14）还包括 特征（24），用于提取导向光，以便响应于光激发将发色团元件（16）发射的光恢复到层（14）中，并将光引导到检测和测量装置。

    Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
    4.
    发明申请
    Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate 有权
    单一或多色高效率发光二极管（LED）通过在图案化衬底上生长

    公开(公告)号：US20060202226A1

    公开(公告)日：2006-09-14

    申请号：US11067910

    申请日：2005-02-28

    申请人： Claude Weisbuch ,  Aurelien David ,  James Speck ,  Steven DenBaars

    发明人： Claude Weisbuch ,  Aurelien David ,  James Speck ,  Steven DenBaars

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L2933/0083

    摘要： A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.

    摘要翻译： 具有高提取效率的单色或多色发光二极管（LED）由衬底，形成在衬底上的缓冲层，沉积在缓冲层顶部上的一个或多个图案化层和形成的一个或多个有源层组成 在图案化层之间或之间，例如通过横向外延生长（LEO），并且包括一个或多个发光物质，例如量子阱。 图案化层包括由绝缘，半导体或金属材料制成的图案化，穿孔或穿孔掩模，以及填充掩模中的孔的材料。 由于掩模和填充掩模中的孔的材料之间的折射率的变化，由于折射率与有源层和/或作为掩埋衍射光栅的对比，图案化层用作光学限制层。

    Support device for chromophore elements
    6.
    发明申请
    Support device for chromophore elements 审中-公开
    发色团元素支持装置

    公开(公告)号：US20060028642A1

    公开(公告)日：2006-02-09

    申请号：US11176053

    申请日：2005-07-07

    申请人： Claude Weisbuch

    发明人： Claude Weisbuch

    IPC分类号： G01N21/01

    CPC分类号： G01N21/645 ,  G01N21/7703

    摘要： A support for chromophore elements, which elements are for being illuminated by excitation light to emit fluorescence at a wavelength different from that of the excitation light, the support including an internal reflective layer reflecting the light emitted by the chromophore elements, a layer of absorbent material absorbing the excitation wavelength, and a layer of material constituting an antireflection layer at said wavelength in order to avoid excitation light being reflected by the support and being added to the fluorescence emitted by the chromophore elements.

    摘要翻译： 对发色团元件的支持，该元件被激发光照射以发射不同于激发光的波长的荧光，该支撑体包括反射由发色团元件发出的光的内部反射层，一层吸收材料 吸收激发波长，以及在所述波长处构成抗反射层的材料层，以避免激发光被载体反射并加入由发色团元件发出的荧光。

    Quantum well semiconductor laser
    7.
    发明授权
    Quantum well semiconductor laser 失效
    量子半导体激光器

    公开(公告)号：US5081634A

    公开(公告)日：1992-01-14

    申请号：US547040

    申请日：1990-07-02

    申请人： Claude Weisbuch ,  Julien Nagle

    发明人： Claude Weisbuch ,  Julien Nagle

    IPC分类号： H01S5/00 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/34

    摘要： The quantum well semiconductor laser has at least one ultrafine layer with a thickness smaller than the critical thickness, the material of which is isoelectronic with that of the well.

    摘要翻译： 量子阱半导体激光器具有至少一个厚度小于临界厚度的超微细层，其临界厚度与阱的等电子质量相同。

    Device for supporting chromophore elements
    9.
    发明授权
    Device for supporting chromophore elements 有权
    用于支持发色团元件的装置

    公开(公告)号：US08153066B2

    公开(公告)日：2012-04-10

    申请号：US11106247

    申请日：2005-04-14

    申请人： Claude Weisbuch

    发明人： Claude Weisbuch

    IPC分类号： G01N21/01 ,  G01N33/53

    CPC分类号： G01N21/648 ,  G01N21/6458 ,  G01N21/7703 ,  G01N2021/6419 ,  G01N2021/6421 ,  G01N2021/6441 ,  G01N2021/6471 ,  G02B6/42

    摘要： A device for supporting chromophore elements suitable for emitting fluorescence in response to light excitation, the device comprising a substrate having a surface layer carrying the chromophore elements, forming a planar waveguide, and containing photoluminescent constituents which emit guided luminescence at the excitation wavelength(s) of the chromophore elements when they are excited by primary excitation light illuminating the surface layer. The invention is particularly applicable to biochip type devices.

    摘要翻译： 一种用于支持适于发射响应于光激发的荧光的发色元件的装置，所述装置包括具有承载发色团元件的表面层的基底，形成平面波导，并且包含以激发波长发射引导发光的光致发光成分， 的发色团元素当它们被照射表面层的主激发光激发时。 本发明特别适用于生物芯片型装置。

    Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
    10.
    发明申请
    Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth 有权
    水平发射，垂直发射，束形，分布反馈（DFB）激光器，通过在具有多个过度生长的图案化衬底上生长制成

    公开(公告)号：US20070125995A1

    公开(公告)日：2007-06-07

    申请号：US11633148

    申请日：2006-12-04

    申请人： Claude Weisbuch ,  Shuji Nakamura

    发明人： Claude Weisbuch ,  Shuji Nakamura

    IPC分类号： H01L29/06 ,  H01L27/15

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  G02B6/1225 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/105 ,  H01S5/12 ,  H01S5/1206 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/1231 ,  H01S5/18 ,  H01S5/187 ,  H01S5/20 ,  H01S5/2004 ,  H01S2304/12

    摘要： A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.

    摘要翻译： 使用集成光学元件的结构包括衬底，在衬底上生长的缓冲层，沉积在缓冲层顶部上的一个或多个第一图案化层，其中每个第一图案化层由底部侧向外延生长（ LEO）掩模层和LEO氮化物层填充底部LEO掩模层中的孔，形成在第一图案化层上的一个或多个有源层和沉积在有源层顶部上的一个或多个第二图案化层，其中第二个 图案化层由顶部LEO掩模层和顶部LEO掩模层中的LEO氮化物层填充孔组成，其中顶部和/或底部LEO掩模层用作反射镜，光限制层，光栅，波长选择元件，光束 用于有源层的成形元件或光束引导元件。