公开(公告)号：US09395209B2

公开(公告)日：2016-07-19

申请号：US14552326

申请日：2014-11-24

Applicant: Crocus Technology Inc.

Inventor： Bertrand F. Cambou ,  Douglas J. Lee ,  Ken Mackay ,  Barry Hoberman

IPC: G01D5/12 ,  G01B7/30 ,  G01R33/09 ,  G01C17/02 ,  G01D5/16 ,  G01R33/00

CPC classification number: G01D5/12 ,  G01B7/30 ,  G01C17/02 ,  G01D5/16 ,  G01R33/0029 ,  G01R33/096 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

公开(公告)号：US20150214952A1

公开(公告)日：2015-07-30

申请号：US14606960

申请日：2015-01-27

Applicant: Crocus Technology Inc.

Inventor： Douglas J. Lee ,  Yaron Oren-Pines ,  Seyed A. Tabatabaei ,  Stuart Desmond Rumley ,  Bertrand F. Cambou

IPC: H03K19/18

CPC classification number: H03K19/18 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on an analog input to the circuit. Each MTJ is electrically connected to a first output terminal and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of each of the MTJs varies based on the magnetic field. The circuit is configured to generate an analog output based on the output of at least one of the first and the second output terminal.

Abstract translation: 电路包括包括输入端子，输出端子，场线和磁隧道结（MTJ）的磁逻辑单元。 场线电连接第一和第二输入端子，并且被配置为基于对第一和第二输入端子中的至少一个的输入产生磁场。 输入是基于电路的模拟输入。 每个MTJ电连接到第一输出端和第二输出端，并且被配置为使得第一和第二输出端中的至少一个的输出响应于MTJ的组合电阻而变化。 每个MTJ的电阻根据磁场而变化。 电路被配置为基于第一和第二输出端子中的至少一个的输出来产生模拟输出。

公开(公告)号：US20150077095A1

公开(公告)日：2015-03-19

申请号：US14552302

申请日：2014-11-24

Applicant: Crocus Technology Inc.

Inventor： Bertrand F. Cambou ,  Douglas J. Lee ,  Ken Mackay ,  Barry Hoberman

IPC: G01D5/12 ,  G01R33/09 ,  G01C17/02

CPC classification number: G01D5/12 ,  G01B7/30 ,  G01C17/02 ,  G01D5/16 ,  G01R33/0029 ,  G01R33/096 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract translation: 一种装置包括电路，被配置为基于输入产生磁场的场线，被配置为确定每个电路的参数的感测模块以及被配置为确定所述装置相对于所述电路的角度定向的磁场方向确定模块 基于参数的外部磁场。 每个电路包括多个磁隧道结。 每个磁性隧道结包括具有存储磁化方向的存储层和具有基于磁场配置的感测磁化方向的感测层。 每个磁性隧道结被构造成使得感应磁化方向和磁性隧道结的电阻基于外部磁场而变化。 该参数根据多个磁隧道结的电阻而变化。 磁场方向确定模块在存储器或处理装置中的至少一个中实现。

公开(公告)号：US20140195883A1

公开(公告)日：2014-07-10

申请号：US14207066

申请日：2014-03-12

Applicant: CROCUS TECHNOLOGY INC.

Inventor： Bertrand F. Cambou ,  Neal Berger ,  Mourad El Baraji

IPC: G06F11/08

CPC classification number: G06F11/08 ,  G06F7/02 ,  G06F2207/025 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C15/02 ,  G11C15/046

Abstract: A check engine includes a plurality of comparators each including a first directional characteristic aligned to store at least one reference bit included in a set of reference bits, and a second directional characteristic aligned to present at least one target bit included in a set of target bits. Each of the plurality of comparators is configured to produce an output representing a level of matching between the at least one target bit and the at least one reference bit, based on a relative alignment between the first directional characteristic and the second directional characteristic. The check engine is configured such that the outputs of the plurality of comparators are combined to produce a combined output. The check engine is configured to determine that the set of target bits matches the set of reference bits based on the combined output of the plurality of comparators.

Abstract translation: 检查引擎包括多个比较器，每个比较器包括对齐以存储包括在一组参考比特中的至少一个参考比特的第一方向特性，以及对准以呈现包括在一组目标比特中的至少一个目标比特的第二方向特性 。 多个比较器中的每一个被配置为基于第一方向特性和第二方向特性之间的相对对准来产生表示所述至少一个目标位和所述至少一个参考位之间的匹配水平的输出。 检查引擎被配置为使得多个比较器的输出被组合以产生组合输出。 检查引擎被配置为基于多个比较器的组合输出来确定目标比特的集合与参考比特集匹配。

公开(公告)号：US20140110802A1

公开(公告)日：2014-04-24

申请号：US13657708

申请日：2012-10-22

Applicant: CROCUS TECHNOLOGY, INC.,

Inventor： Neal Berger ,  Mourad El Baraji ,  Amitay Levi

IPC: H01L29/82

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/5226 ,  H01L23/528 ,  H01L29/82 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Abstract translation: 存储器件包括包括多个磁随机存取存储器（MRAM）单元的磁性层，第一导电层，包括连接多个MRAM单元中包括的MRAM单元的带的层和第二导电层。 第一导电层包括电连接到多个MRAM单元中的至少一个的导电部分，以及被配置为将数据写入多个MRAM单元中的至少一个的场线。 第二导电层包括电连接到多个MRAM单元中的至少一个MRAM单元的导电互连，其中磁性层设置在第一导电层和第二导电层之间。 多个MRAM单元中的至少一个直接附接到第二导电层和带。

公开(公告)号：US20130241636A1

公开(公告)日：2013-09-19

申请号：US13769156

申请日：2013-02-15

Applicant: CROCUS TECHNOLOGY INC.

Inventor： Bertrand F. Cambou ,  Douglas J. Lee ,  Ken Mackay

IPC: H03F15/00

CPC classification number: H03F15/00 ,  G11C11/02 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H03F19/00

Abstract: An apparatus includes a circuit and a field line. The circuit includes a magnetic tunnel junction including a storage layer and a sense layer. The field line is configured to generate a magnetic field based on an input signal, where the magnetic tunnel junction is configured such that a magnetization direction of the sense layer and a resistance of the magnetic tunnel junction vary based on the magnetic field. The circuit is configured to amplify the input signal to generate an output signal that varies in response to the resistance of the magnetic tunnel junction.

Abstract translation: 一种装置包括电路和场线。 该电路包括一个包括存储层和感应层的磁性隧道结。 场线被配置为基于输入信号产生磁场，其中磁性隧道结被配置为使得感测层的磁化方向和磁性隧道结的电阻基于磁场而变化。 电路被配置为放大输入信号以产生响应于磁性隧道结的电阻而变化的输出信号。

公开(公告)号：US10914795B2

公开(公告)日：2021-02-09

申请号：US16280480

申请日：2019-02-20

Applicant: Crocus Technology Inc.

Inventor： Anuraag Mohan

IPC: G01R33/00 ,  G01R33/09

Abstract: A circuit has a magnetic sensor that produces an uncompensated magnetic sensor output signal. A temperature sensor produces an ambient temperature signal. A compensation circuit is connected to the magnetic sensor and the temperature sensor. The compensation circuit is configured to add a computed temperature compensation signal to the uncompensated magnetic sensor output signal to produce a magnetic sensor temperature compensated output signal that reduces thermally induced variation of the uncompensated magnetic sensor output signal.

公开(公告)号：US20200150195A1

公开(公告)日：2020-05-14

申请号：US16683749

申请日：2019-11-14

Applicant: Crocus Technology Inc.

Inventor： Robert D. ZUCKER

IPC: G01R33/09

Abstract: An apparatus includes a magnetic bridge sensor generating an output in response to a sensed magnetic field. An amplification stage processes the output to produce an amplified output signal. A field-effect transistor with a gate receives the amplified output signal, a source node receives a current source and a drain node is connected to the magnetic sensor. A regulator is connected to the magnetic bridge sensor. A first contact is connected to the source node to produce a voltage signal characterizing the sensed magnetic field. A second contact is connected to the magnetic bridge sensor and the regulator.

公开(公告)号：US10460779B2

公开(公告)日：2019-10-29

申请号：US15891233

申请日：2018-02-07

Applicant: Crocus Technology Inc.

Inventor： Michael Gaidis ,  Thao Tran

IPC: G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

Abstract: An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.

公开(公告)号：US09324937B1

公开(公告)日：2016-04-26

申请号：US14666363

申请日：2015-03-24

Applicant: International Business Machines Corporation ,  Crocus Technology Inc.

Inventor： Anthony J. Annunziata ,  Erwan Gapihan

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A thermally assisted magnetoresistive random access memory (TAS-MRAM) device includes a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact. The TAS-MRAM device further includes a dielectric layer that is formed on an upper surface of the first electrical contact and that encapsulates the second electrical contact. The dialectic layer has at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer.

Abstract translation: 热辅助磁阻随机存取存储器（TAS-MRAM）装置包括介于第一电触头和第二电触点之间的磁隧道结。 TAS-MRAM器件还包括形成在第一电触头的上表面上并封装第二电触点的电介质层。 辩证层在磁性隧道结的相邻外壁和电介质层之间具有至少一个真空腔。