公开(公告)号：US07771157B2

公开(公告)日：2010-08-10

申请号：US10034788

申请日：2001-12-27

申请人： Curtis E. Farrell ,  Dennis D. Liu

发明人： Curtis E. Farrell ,  Dennis D. Liu

IPC分类号： B65G65/34

CPC分类号： H01L21/67781

摘要： A wafer transfer machine transfers wafers from either of a first wafer cassette (55) and a second wafer cassette (56) having incompatible registration features into the other, and includes a support plate (30) having a top surface (38) for supporting the first and second wafer cassette. A first and second registration bosses attached to the top surface extend upward into registration features of the first and second wafer cassette, respectively. A carriage (1) is supported by and movable in opposite directions along a track mechanism (41A,B) that is attached in fixed relationship to the support plate (30). First and second wafer pushing members (10A,B) are supported by the carriage. Each wafer pushing member can be moved to push wafers in one of the wafer cassettes into the other by moving the carriage in one direction or the other.

摘要翻译： 晶片转印机将晶片从具有不兼容配准特征的第一晶片盒（55）和第二晶片盒（56）中的任一个转移到另一个中，并且包括支撑板（30），该支撑板具有用于支撑 第一和第二晶片盒。 附接到顶表面的第一和第二配准凸台分别向上延伸到第一和第二晶片盒的配准特征。 托架（1）沿着与固定关系固定在支承板（30）上的履带机构（41A，B）支撑并沿相反方向移动。 第一和第二晶片推动构件（10A，B）由托架支撑。 通过在一个方向或另一个方向上移动托架，可以移动每个晶片推动构件以将晶片盒之一中的晶片推入另一个。

公开(公告)号：US5770826A

公开(公告)日：1998-06-23

申请号：US644884

申请日：1996-05-10

申请人： Praveen Chaudhari ,  James Andrew Lacey ,  Shui-Chih Alan Lien ,  Curtis E. Farrell

发明人： Praveen Chaudhari ,  James Andrew Lacey ,  Shui-Chih Alan Lien ,  Curtis E. Farrell

IPC分类号： C08G73/10 ,  G02F1/1337 ,  C07C1/00 ,  C07F1/00 ,  G02F1/1339

CPC分类号： G02F1/13378 ,  G02F1/133723 ,  G02F2001/133738 ,  G02F2001/133742

摘要： We have found that liquid crystals can be aligned on a polyimide surface exposed to a low energy and neutral Argon ion beam. The energy of the incident ions were varied between 75 and 500 eV, the integrated current density from 100 .mu.A/cm.sup.2 to 500 mA/cm.sup.2, and the angle of incidence over which alignment was measured was between 10 and 20 degrees. The pretilt angle of the liquid crystals could be varied between 0 and 8 degrees, by controlling the processing conditions. Degradation of the polyimide, which leads to charge migration, can be avoided by operating at low accelerating voltages.

摘要翻译： 我们发现液晶可以在暴露于低能量和中性氩离子束的聚酰亚胺表面上排列。 入射离子的能量在75和500eV之间变化，积分电流密度从100μA/ cm 2到500mA / cm 2，并且测量到哪个取向的入射角在10到20度之间。 通过控制处理条件，液晶的预倾角可以在0和8度之间变化。 通过在低加速电压下工作可以避免导致电荷迁移的聚酰亚胺的降解。

公开(公告)号：US5633047A

公开(公告)日：1997-05-27

申请号：US449196

申请日：1995-05-24

申请人： Michael J. Brady ,  Curtis E. Farrell ,  Sung K. Kang ,  Jeffrey R. Marino ,  Donald J. Mikalsen ,  Paul A. Moskowitz ,  Eugene J. O'Sullivan ,  Terrence R. O'Toole ,  Sampath Purushothaman ,  Sheldon C. Rieley ,  George F. Walker

发明人： Michael J. Brady ,  Curtis E. Farrell ,  Sung K. Kang ,  Jeffrey R. Marino ,  Donald J. Mikalsen ,  Paul A. Moskowitz ,  Eugene J. O'Sullivan ,  Terrence R. O'Toole ,  Sampath Purushothaman ,  Sheldon C. Rieley ,  George F. Walker

IPC分类号： C23C18/50 ,  C25D3/54 ,  H01L23/495 ,  H01L23/532 ,  B05D1/18

CPC分类号： H01L24/12 ,  C23C18/50 ,  C25D3/54 ,  H01L23/4951 ,  H01L23/53271 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/73215 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L24/45 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181

摘要： Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.

摘要翻译： 在电子设备中的导体的表面使用含锗和锗的材料。 焊料可无焊接，电线可以与这些表面引线接合。 这些材料用作用于封装集成电路芯片的引线框架的表面涂层。 这些材料可以贴花地转移到导体表面上，或者无电解或电解地放置在其上。