公开(公告)号：US08105465B2

公开(公告)日：2012-01-31

申请号：US12577455

申请日：2009-10-12

申请人： Kwangduk Douglas Lee ,  Takashi Morii ,  Yoichi Suzuki ,  Sudha Rathi ,  Martin Jay Seamons ,  Deenesh Padhi ,  Bok Hoen Kim ,  Cynthia Pagdanganan

发明人： Kwangduk Douglas Lee ,  Takashi Morii ,  Yoichi Suzuki ,  Sudha Rathi ,  Martin Jay Seamons ,  Deenesh Padhi ,  Bok Hoen Kim ,  Cynthia Pagdanganan

IPC分类号： C01B31/00

CPC分类号： H01L21/3146 ,  C23C16/26 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/3141

摘要： Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.

摘要翻译： 提供了在基板上沉积无定形碳层的方法和装置。 在一个实施例中，沉积工艺包括将衬底定位在衬底处理室中，将具有大于1:2的碳原子与氢原子比的烃源引入到处理室中，引入等离子体引发气体，所述等离子体引发气体选自 氢气，氦气，氩气，氮气及其组合进入处理室，烃源具有等离子体起始气体体积流量比为1：2或更大的体积流量，在处理室中产生等离子体，并形成 基底上的共形无定形碳层。

公开(公告)号：US08097082B2

公开(公告)日：2012-01-17

申请号：US12110879

申请日：2008-04-28

申请人： Jianhua Zhou ,  Deenesh Padhi ,  Karthik Janakiraman ,  Hang Yu ,  Siu F. Cheng ,  Yoganand Saripalli ,  Tersem Summan

发明人： Jianhua Zhou ,  Deenesh Padhi ,  Karthik Janakiraman ,  Hang Yu ,  Siu F. Cheng ,  Yoganand Saripalli ,  Tersem Summan

IPC分类号： C23C16/50

CPC分类号： C23C16/5096 ,  H01J37/32541 ,  Y10T117/10

摘要： A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

摘要翻译： 一种用于在等离子体工艺期间调节局部等离子体密度的方法和装置。 一个实施例提供了一种电极组件，其包括具有非平面表面的导电面板。 非平面表面被配置为在处理期间面向衬底，并且设置导电面板使得非平面表面与具有电极的衬底支撑件相对。 导电面板和基板支撑件形成等离子体体积。 非平面被配置为通过改变导电板和电极之间的距离来调节导电板和电极之间的电场。

公开(公告)号：US20110104400A1

公开(公告)日：2011-05-05

申请号：US12987688

申请日：2011-01-10

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： C23C26/00 ,  H05H1/24

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US07572337B2

公开(公告)日：2009-08-11

申请号：US11131010

申请日：2005-05-16

申请人： Juan Carlos Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom K. Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Hoen Kim ,  Hichem M'Saad ,  Daemian Raj

发明人： Juan Carlos Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom K. Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Hoen Kim ,  Hichem M'Saad ,  Daemian Raj

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45574 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道通过阻挡板和气体分配板中的多个孔传送第一气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。

公开(公告)号：US20090104541A1

公开(公告)日：2009-04-23

申请号：US11877559

申请日：2007-10-23

申请人： Eui Kyoon Kim ,  Deenesh Padhi ,  Huixiong Dai ,  Mehul Naik ,  Martin Jay Seamons ,  Bok Hoen Kim

发明人： Eui Kyoon Kim ,  Deenesh Padhi ,  Huixiong Dai ,  Mehul Naik ,  Martin Jay Seamons ,  Bok Hoen Kim

IPC分类号： G03F1/00

CPC分类号： G03F7/091 ,  G03F7/11

摘要： The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.

摘要翻译： 本发明包括当浸渍显影后干燥光致抗蚀剂掩模时减少光致抗蚀剂掩模塌陷的方法。 随着特征尺寸的不断缩小，用于冲洗光致抗蚀剂掩模的水的毛细管力接近光致抗蚀剂对ARC的粘附力。 当毛细管力超过粘附力时，面具的特征可能会因为水干燥而将相邻的特征拉到一起而崩溃。 通过在沉积光致抗蚀剂之前在ARC上沉积气密的氧化物层，粘合力可能会超过毛细管力，并且光致抗蚀剂掩模的特征可能不会崩溃。

公开(公告)号：US20080003824A1

公开(公告)日：2008-01-03

申请号：US11427324

申请日：2006-06-28

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/302

CPC分类号： H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20070082479A1

公开(公告)日：2007-04-12

申请号：US11245677

申请日：2005-10-06

申请人： Deenesh Padhi ,  Girish Dixit

发明人： Deenesh Padhi ,  Girish Dixit

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76819 ,  H01L21/7684 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides methods for fabricating horizontal interconnect lines for use in semiconductor wafer fabrication. A dielectric layer is deposited on a dielectric stack having a planarized top surface. The dielectric layer is not planarized at this stage of the process. A pre-planarizing thickness profile of the non-planarized dielectric layer is determined and recorded. An interconnect line trench is then etched through the dielectric layer. A sandwich layer including a conductive Cu diffusion barrier layer and a Cu seed layer is deposited in the trench and on the dielectric layer. A Cu comprising metal is deposited in the sandwich lined trench. A Cu metal overburden is thereby deposited on the section of the sandwich layer that is positioned on the dielectric layer. A first CMP process is used to remove the Cu overburden and the Cu seed layer that is formed in the sandwich layer portion on the dielectric layer. A second CMP process is utilized wherein the pre-planarizing thickness profile is employed to remove the Cu barrier layer from the top surface of the dielectric layer, the second CMP process is then continued by planarizing the dielectric layer to form a substantially uniform flat surface having a substantially uniform thickness which is substantially equal to a predetermined design thickness. The second CMP process thereby results in fabricating a dielectric layer wherein substantially all interconnect lines have a substantially uniform thickness that is substantially equal to the design thickness for the dielectric layer.

摘要翻译： 本发明提供用于制造用于半导体晶片制造的水平互连线的方法。 介电层沉积在具有平坦化顶表面的电介质叠层上。 在该过程的这个阶段，电介质层不被平坦化。 确定并记录非平面化电介质层的预平面化厚度分布。 然后通过介电层蚀刻互连线沟槽。 包含导电性Cu扩散阻挡层和Cu籽晶层的夹层被沉积在沟槽和电介质层上。 包含金属的Cu沉积在夹层衬里的沟槽中。 因此，在位于电介质层上的夹层的部分上沉积Cu金属覆盖层。 使用第一CMP工艺来去除在电介质层上的夹层结构部分中形成的Cu覆盖层和Cu籽晶层。 使用第二CMP工艺，其中使用预平面化厚度轮廓来从电介质层的顶表面去除Cu阻挡层，然后通过平坦化介电层来继续进行第二CMP工艺以形成基本上均匀的平坦表面，其具有 基本均匀的厚度，其基本上等于预定的设计厚度。 因此，第二CMP工艺导致制造介电层，其中基本上所有的互连线具有基本上等于介电层的设计厚度的基本均匀的厚度。

公开(公告)号：US20060046520A1

公开(公告)日：2006-03-02

申请号：US10931609

申请日：2004-09-01

申请人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Rocha-Alvarez ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Rocha-Alvarez ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

摘要翻译： 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。

公开(公告)号：US20050136185A1

公开(公告)日：2005-06-23

申请号：US10979078

申请日：2004-10-29

申请人： Sivakami Ramanathan ,  Deenesh Padhi ,  Srinivas Gandikota ,  Girish Dixit

发明人： Sivakami Ramanathan ,  Deenesh Padhi ,  Srinivas Gandikota ,  Girish Dixit

IPC分类号： B05D1/40 ,  B05D3/00 ,  C23C18/16 ,  C23C18/31 ,  C23C18/44 ,  C23C18/50 ,  C23G1/10 ,  H01L21/288 ,  H01L21/302 ,  H01L21/31 ,  H01L21/44 ,  H01L21/461 ,  H01L21/768

CPC分类号： H01L21/76877 ,  C23C18/166 ,  C23C18/1831 ,  C23C18/1834 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/34 ,  C23C18/36 ,  C23C18/44 ,  C23C18/50 ,  C23G1/10 ,  H01L21/288 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76883

摘要： A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution. In another aspect, the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution. In still another aspect, the method includes using the acidic solution to remove between about 100 Å and about 200 Å of the passivating material. In yet another aspect, the method includes cleaning the substrate surface with a first acidic solution prior to the deposition of the initiation layer.

摘要翻译： 提供了使用一种或多种电镀技术在衬底表面上沉积钝化层的方法。 该方法的实施例包括通过将衬底表面暴露于第一无电解溶液来选择性地沉积引发层，通过将引发层暴露于第二无电解溶液来沉积起始层上的钝化材料，并用 酸性溶液。 在另一方面，该方法包括在施加酸性溶液期间将超声波或兆声波能量施加到基底表面。 在另一方面，该方法包括使用酸性溶液去除大约至大约200埃的钝化材料。 在另一方面，该方法包括在沉积起始层之前用第一酸性溶液清洗基底表面。

公开(公告)号：US06878245B2

公开(公告)日：2005-04-12

申请号：US10085338

申请日：2002-02-27

申请人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Sivakami Ramanathan ,  Muhammad Atif Malik ,  Girish A. Dixit

发明人： Srinivas Gandikota ,  Chris R. McGuirk ,  Deenesh Padhi ,  Sivakami Ramanathan ,  Muhammad Atif Malik ,  Girish A. Dixit

IPC分类号： C25D21/14 ,  C25D21/18 ,  C25D17/00 ,  C25D21/00

CPC分类号： C25D21/18 ,  C25D21/14

摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.

摘要翻译： 本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。 本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。 补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。 一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。 然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。 计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。 该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。 阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。