公开(公告)号：US08347813B2

公开(公告)日：2013-01-08

申请号：US12332234

申请日：2008-12-10

申请人： Ki Jong Kim ,  Dae Youn Kim

发明人： Ki Jong Kim ,  Dae Youn Kim

IPC分类号： B05C11/00 ,  B05C13/00 ,  C23C14/00

CPC分类号： C23C16/52 ,  H01L21/67259

摘要： A thin film deposition apparatus including a substrate mounting error detector, a chamber and a substrate support positioned in the chamber. The substrate support is configured to support a substrate. The substrate mounting error detector includes: a light source configured to provide a light beam to the substrate, such that the substrate reflects the light beam; a collimator configured to selectively pass at least a portion of the light beam reflected by the substrate; and an optical sensor configured to detect the at least a portion of the reflected light beam passed by the collimator. The detector is positioned and oriented to detect substrate position on a lowered support prior to raising the support into contact with an upper cover of a clamshell reactor arrangement. This configuration allows a thin film deposition process only if the substrate is correctly mounted on the substrate support. Thus, abnormal deposition due to a substrate mounting error is prevented in advance.

摘要翻译： 一种薄膜沉积设备，包括基板安装误差检测器，腔室和位于腔室中的基板支撑件。 衬底支撑件构造成支撑衬底。 基板安装误差检测器包括：被配置为向基板提供光束的光源，使得基板反射光束; 准直器，被配置为选择性地通过由所述基板反射的光束的至少一部分; 以及光学传感器，被配置为检测由准直仪通过的反射光束的至少一部分。 检测器被定位和定向以在将支撑件升高成与蛤壳式反应器装置的上盖接触之前检测降低的支撑件上的基板位置。 这种配置仅在基板正确地安装在基板支撑件上时才允许薄膜沉积工艺。 因此，预先防止由于基板安装误差引起的异常沉积。

公开(公告)号：US20110308460A1

公开(公告)日：2011-12-22

申请号：US13171899

申请日：2011-06-29

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/455 ,  C23C16/509 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US20110097905A1

公开(公告)日：2011-04-28

申请号：US12980633

申请日：2010-12-29

申请人： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

发明人： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

IPC分类号： H01L21/31 ,  F17D1/00 ,  H01L21/20

CPC分类号： C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

摘要： An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

摘要翻译： 提供了一种通过改善气阀系统来防止发生死体积而制造使用具有改善吹扫效率的四通阀的半导体器件的装置和方法。 该装置包括反应室，处理基板以制造半导体器件; 第一处理气体供给管，其将第一处理气体供给到所述反应室中; 四通阀，具有第一入口，第二入口，第一出口和第二出口，并安装在第一处理气体供应管上，使得第一入口和第一出口连接到第一处理气体供应管; 连接到所述四通阀的第二入口的第二处理气体供给管，以供应第二处理气体; 连接到四通阀的第二出口的旁路; 和安装在旁路上的闸阀。

公开(公告)号：US20100251469A1

公开(公告)日：2010-10-07

申请号：US12602656

申请日：2008-05-30

申请人： Dae Youn Kim ,  Min Young Park

发明人： Dae Youn Kim ,  Min Young Park

IPC分类号： E03D11/00

CPC分类号： A47K17/024 ,  A47K2017/006

摘要： An upper body support apparatus for toilets is disclosed. The upper body support apparatus includes a support board (11), which supports the arms of the user thereon. The support board is rotated downwards or upwards between a wall and the front of the upper body of the user. Therefore, the present invention enables a user to place his/her arms on the support board (11). Furthermore, free movement of the user is ensured, and the upper body support apparatus is prevented from impeding the opening or closing of a door of the lavatory. In addition, when washing the lavatory, the upper body support apparatus is prevented from impeding the washing operation. As well, the present invention has a function of providing heat to maintain the body temperature of the user in the winter and a vibration function to stimulate the abdomen of the user to promote bowel evacuation.

摘要翻译： 公开了一种用于厕所的上身支撑装置。 上身支撑装置包括支撑用户的臂支撑板（11）。 支撑板在用户的上身的墙壁和前部之间向下或向下旋转。 因此，本发明能够使用户将他/她的胳膊放置在支撑板（11）上。 此外，确保了使用者的自由移动，并且防止上身支撑装置妨碍盥洗室门的打开或关闭。 此外，当洗涤盥洗室时，防止上身支撑装置妨碍洗涤操作。 此外，本发明还具有提供用于冬季保持用户体温的振动功能，以刺激使用者的腹部促进排便的功能。

公开(公告)号：US20080032502A1

公开(公告)日：2008-02-07

申请号：US11681055

申请日：2007-03-01

申请人： Charles A. Baskin ,  Timothy Provencher ,  Mike Manasco ,  Dae-Youn Kim

发明人： Charles A. Baskin ,  Timothy Provencher ,  Mike Manasco ,  Dae-Youn Kim

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/448

摘要： A semiconductor processing apparatus comprises a pyrophoric source vessel within an enclosure, the vessel containing a pyrophoric material. An air intake labyrinth extends away from the enclosure and has an inlet and an outlet. The inlet is in fluid communication with an exterior of the enclosure, and the outlet is in fluid communication with an interior of the enclosure. The labyrinth defines a tortuous path between the inlet and the outlet. In order to thermally isolate the enclosure, it can be surrounded by an air gap of at least 10 mm separating the enclosure from other components of the processing apparatus, to prevent damage to such other components. The thermal isolation can also be achieved by forming the enclosure from double walls with a 10 mm gap therebetween. The pyrophoric enclosure can have a separate exhaust duct and/or scrubber than those of a semiconductor processing reactor associated with the enclosure.

摘要翻译： 半导体处理装置包括在外壳内的自燃源容器，该容器含有自燃材料。 进气迷宫延伸远离外壳，并具有入口和出口。 入口与外壳的外部流体连通，并且出口与外壳的内部流体连通。 迷宫定义入口和出口之间的曲折路径。 为了使外壳热隔离，可以将外壳与加工设备的其他部件隔开至少10mm的气隙包围，以防止损坏这些其他部件。 热隔离也可以通过从两壁之间形成10mm间隙的双壁形成外壳来实现。 自燃外壳可以具有与与外壳相关联的半导体处理反应器的排气管和/或洗涤器的单独的排气管道和/或洗涤器。

公开(公告)号：US09145609B2

公开(公告)日：2015-09-29

申请号：US13439178

申请日：2012-04-04

申请人： Young-Seok Choi ,  Dae-Youn Kim ,  Seung Woo Choi ,  Yong Min Yoo ,  Jung Soo Kim

发明人： Young-Seok Choi ,  Dae-Youn Kim ,  Seung Woo Choi ,  Yong Min Yoo ,  Jung Soo Kim

IPC分类号： C23C16/455

CPC分类号： C23C16/45591 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45587

摘要： A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

摘要翻译： 根据本发明的示例性实施例的侧流原子层沉积装置消除了常规横流原子层沉积装置中的气流控制板，并控制反应器盖中的气体输入部分和气体输出部分的形状，以使 通向基板中心的气体流动通道，该气体流动通道短于通向基板边缘的气体流动路径，从而增加每单位面积流到基板中心的气体量。 因此，侧流反应器中的基板中心的膜厚度增加。

公开(公告)号：US20090155452A1

公开(公告)日：2009-06-18

申请号：US12332234

申请日：2008-12-10

申请人： Ki Jong Kim ,  Dae Youn Kim

发明人： Ki Jong Kim ,  Dae Youn Kim

IPC分类号： C23C16/52 ,  B05C11/00

CPC分类号： C23C16/52 ,  H01L21/67259

摘要： A thin film deposition apparatus including a substrate mounting error detector, a chamber and a substrate support positioned in the chamber. The substrate support is configured to support a substrate. The substrate mounting error detector includes: a light source configured to provide a light beam to the substrate, such that the substrate reflects the light beam; a collimator configured to selectively pass at least a portion of the light beam reflected by the substrate; and an optical sensor configured to detect the at least a portion of the reflected light beam passed by the collimator. The detector is positioned and oriented to detect substrate position on a lowered support prior to raising the support into contact with an upper cover of a clamshell reactor arrangement. This configuration allows a thin film deposition process only if the substrate is correctly mounted on the substrate support. Thus, abnormal deposition due to a substrate mounting error is prevented in advance.

摘要翻译： 一种薄膜沉积设备，包括基板安装误差检测器，腔室和位于腔室中的基板支撑件。 衬底支撑件构造成支撑衬底。 基板安装误差检测器包括：被配置为向基板提供光束的光源，使得基板反射光束; 准直器，被配置为选择性地通过由所述衬底反射的光束的至少一部分; 以及光学传感器，被配置为检测由准直仪通过的反射光束的至少一部分。 检测器被定位和定向以在将支撑件升高成与蛤壳式反应器装置的上盖接触之前检测降低的支撑件上的基板位置。 这种配置仅在基板正确地安装在基板支撑件上时才允许薄膜沉积工艺。 因此，预先防止由于基板安装误差引起的异常沉积。

公开(公告)号：US20080241384A1

公开(公告)日：2008-10-02

申请号：US12058364

申请日：2008-03-28

申请人： Sang Jin Jeong ,  Dae Youn Kim ,  Jung Soo Kim ,  Hyung Sang Park ,  Chun Soo Lee

发明人： Sang Jin Jeong ,  Dae Youn Kim ,  Jung Soo Kim ,  Hyung Sang Park ,  Chun Soo Lee

IPC分类号： C23C16/00

CPC分类号： C23C16/45527 ,  C23C16/45504 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

摘要： A deposition apparatus and deposition method for forming a film on a substrate are disclosed. A film is deposited on a substrate by exposing the substrate to different flow directions of reactant gases. In one embodiment, the substrate is rotated in the reaction chamber after a film having an intermediate thickness is formed on the substrate. In other embodiments, the substrate is transferred from one reaction chamber to another after a film having an intermediate thickness is formed on the substrate. Accordingly, a film having a uniform thickness is deposited, averaging out depletion effect.

摘要翻译： 公开了一种在衬底上形成膜的沉积设备和沉积方法。 通过将衬底暴露于反应气体的不同流动方向，将膜沉积在衬底上。 在一个实施例中，在基板上形成具有中间厚度的膜之后，将基板旋转在反应室中。 在其他实施例中，在基板上形成中间厚度的膜之后，将基板从一个反应室转移到另一个反应室。 因此，沉积具有均匀厚度的膜，平均化耗尽效应。

公开(公告)号：US20080056975A1

公开(公告)日：2008-03-06

申请号：US11775111

申请日：2007-07-09

申请人： Seok-Jun Won ,  Yong-Min Yoo ,  Min-woo Song ,  Dae-Youn Kim ,  Young-Hoon Kim ,  Weon-Hong Kim ,  Jung-Min Park ,  Sun-mi Song

发明人： Seok-Jun Won ,  Yong-Min Yoo ,  Min-woo Song ,  Dae-Youn Kim ,  Young-Hoon Kim ,  Weon-Hong Kim ,  Jung-Min Park ,  Sun-mi Song

IPC分类号： C01B13/14 ,  C25B1/00

CPC分类号： C01G25/02 ,  C01G23/047 ,  C01G27/02 ,  C01G35/00 ,  C01P2006/40

摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.

摘要翻译： 在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。 包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。 对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。 氧化反应的加速可以改善金属氧化物的电特性和均匀性。

公开(公告)号：US20150032595A1

公开(公告)日：2015-01-29

申请号：US14376815

申请日：2013-02-05

申请人： Min Soo Koo ,  Dae Youn Kim ,  Chel Ho Oh

发明人： Min Soo Koo ,  Dae Youn Kim ,  Chel Ho Oh

IPC分类号： G06Q40/04

CPC分类号： G06Q40/04 ,  G06Q40/06

摘要： The present invention relates to a method and apparatus for transaction securities. According to the present invention, a disposal restriction on securities can be set or canceled by setting up a security right or creating other contracts according to an enterprise declaration of will. Also, according to the present invention, securities liquidity and stability can be increased by enabling an owner of securities to dispose of the securities having a disposal restriction set through a sell restriction management agreement, as well as by imposing certain restrictions on disposal.

摘要翻译： 本发明涉及交易证券的方法和装置。 根据本发明，可以通过设立担保权或根据企业的意愿书制定其他合同来设定或取消对证券的处置限制。 此外，根据本发明，证券流动性和稳定性可以通过使证券所有人通过销售限制管理协议处置具有处置限制的证券，以及对处置施加一定限制来增加。