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19 条记录 (耗时 0.019 秒)

    Content addressable memory
    1.
    发明授权
    Content addressable memory 有权

    公开(公告)号：US09859268B2

    公开(公告)日：2018-01-02

    申请号：US13469175

    申请日：2012-05-11

    申请人： Daisuke Matsubayashi

    发明人： Daisuke Matsubayashi

    IPC分类号： H01L29/10 ,  H01L27/02 ,  G11C15/04 ,  H01L27/06 ,  H01L27/105

    CPC分类号： H01L27/0207 ,  G11C15/04 ,  H01L27/0688 ,  H01L27/1052

    摘要： A content addressable memory has many elements in one memory cell; thus, the area of one memory cell tends to be large. In view of the above, it is an object of an embodiment of the present invention to reduce the area of one memory cell. Charge can be held with the use of a channel capacitance in a reading transistor (capacitance between a gate electrode and a channel formation region). In other words, the reading transistor also serves as a charge storage transistor. One of a source and a drain of a charge supply transistor is electrically connected to a gate of the reading and charge storage transistor.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120292614A1

    公开(公告)日：2012-11-22

    申请号：US13469175

    申请日：2012-05-11

    申请人： Daisuke Matsubayashi

    发明人： Daisuke Matsubayashi

    IPC分类号： H01L27/088 ,  H01L29/12

    CPC分类号： H01L27/0207 ,  G11C15/04 ,  H01L27/0688 ,  H01L27/1052

    摘要： A content addressable memory has many elements in one memory cell; thus, the area of one memory cell tends to be large. In view of the above, it is an object of an embodiment of the present invention to reduce the area of one memory cell. Charge can be held with the use of a channel capacitance in a reading transistor (capacitance between a gate electrode and a channel formation region). In other words, the reading transistor also serves as a charge storage transistor. One of a source and a drain of a charge supply transistor is electrically connected to a gate of the reading and charge storage transistor.

    摘要翻译： 内容可寻址存储器在一个存储器单元中具有许多元件; 因此，一个存储单元的面积趋于变大。 鉴于上述，本发明的实施例的目的是减小一个存储单元的面积。 可以通过在读取晶体管（栅电极和沟道形成区域之间的电容）中使用沟道电容来保持电荷。 换句话说，读取晶体管也用作电荷存储晶体管。 电荷晶体管的源极和漏极之一电连接到读取和电荷存储晶体管的栅极。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120032161A1

    公开(公告)日：2012-02-09

    申请号：US13191930

    申请日：2011-07-27

    申请人： Daisuke MATSUBAYASHI

    发明人： Daisuke MATSUBAYASHI

    IPC分类号： H01L27/108

    CPC分类号： H01L27/11517 ,  G11C11/403 ,  G11C16/0433 ,  H01L27/0207 ,  H01L27/1156 ,  H01L27/1211 ,  H01L27/1225

    摘要： An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Further, by reducing the number of source lines, the storage capacity per unit area is increased.

    摘要翻译： 目的在于提供一种半导体器件，其即使在未通电时也能够保持存储的数据，并且通过减少布线数量来实现高集成度。 半导体器件使用可以充分降低晶体管（例如，宽带隙半导体的氧化物半导体材料）的截止电流的材料形成。 当使用允许充分降低晶体管的截止电流的半导体材料时，可以长期保持数据。 一条线用作写入字线和用于读取的字线，一行用作写入的位线和用于读取的位线，从而减少了布线数量。 此外，通过减少源极线的数量，每单位面积的存储容量增加。

    Memory device and electronic device
    5.
    发明授权
    Memory device and electronic device 有权
    存储设备和电子设备

    公开(公告)号：US08760959B2

    公开(公告)日：2014-06-24

    申请号：US13418546

    申请日：2012-03-13

    申请人： Daisuke Matsubayashi

    发明人： Daisuke Matsubayashi

    IPC分类号： G11C8/00 ,  G11C8/10

    CPC分类号： H01L27/1052 ,  G11C8/10 ,  G11C11/404 ,  G11C11/405 ,  H01L23/528 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/7869

    摘要： A selection operation is performed for individual memory cells. A device includes a first memory cell and a second memory cell provided in the same row as the first memory cell, each of which includes a field-effect transistor having a first gate and a second gate. The field-effect transistor controls at least data writing and data holding in the memory cell by being turned on or off. The device further includes a row selection line electrically connected to the first gates of the field-effect transistors included in the first memory cell and the second memory cell, a first column selection line electrically connected to the second gate of the field-effect transistor included in the first memory cell, and a second column selection line electrically connected to the second gate of the field-effect transistor included in the second memory cell.

    摘要翻译： 对各个存储单元执行选择操作。 一种器件包括与第一存储器单元相同的行中提供的第一存储单元和第二存储单元，每个存储单元包括具有第一栅极和第二栅极的场效应晶体管。 场效应晶体管通过导通或截止来控制存储单元中的至少数据写入和数据保持。 该装置还包括电连接到包括在第一存储单元和第二存储单元中的场效应晶体管的第一栅极的行选择线，电连接到场效应晶体管的第二栅极的第一列选择线 以及与第二存储单元中包含的场效应晶体管的第二栅极电连接的第二列选择线。

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120032162A1

    公开(公告)日：2012-02-09

    申请号：US13191934

    申请日：2011-07-27

    申请人： Daisuke MATSUBAYASHI

    发明人： Daisuke MATSUBAYASHI

    IPC分类号： H01L27/108 ,  H01L29/43

    CPC分类号： H01L27/11517 ,  G11C11/403 ,  G11C16/0433 ,  G11C16/0483 ,  H01L27/1156 ,  H01L27/1225

    摘要： An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Accordingly, the storage capacity per unit area is increased.

    摘要翻译： 目的在于提供一种半导体器件，其即使在未通电时也能够保持存储的数据，并且通过减少布线数量来实现高集成度。 半导体器件使用可以充分降低晶体管（例如，宽带隙半导体的氧化物半导体材料）的截止电流的材料形成。 当使用允许充分降低晶体管的截止电流的半导体材料时，可以长期保持数据。 一条线用作写入字线和用于读取的字线，一行用作写入的位线和用于读取的位线，从而减少了布线数量。 因此，每单位面积的存储容量增加。

    Storage device including memory cell using transistor having oxide semiconductor and amplifier circuit
    7.
    发明授权
    Storage device including memory cell using transistor having oxide semiconductor and amplifier circuit 有权
    存储装置包括使用具有氧化物半导体和放大器电路的晶体管的存储单元

    公开(公告)号：US09263451B2

    公开(公告)日：2016-02-16

    申请号：US13280874

    申请日：2011-10-25

    申请人： Daisuke Matsubayashi ,  Tatsuya Ohnuki

    发明人： Daisuke Matsubayashi ,  Tatsuya Ohnuki

    IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L27/105 ,  H01L21/02 ,  H01L27/12

    CPC分类号： H01L27/1052 ,  G11C11/404 ,  G11C11/4099 ,  H01L21/02565 ,  H01L27/1225

    摘要： A storage device in which stored data can be held even when power is not supplied, and stored data can be read at high speed without turning on a transistor included in a storage element is provided. In the storage device, a memory cell having a transistor including an oxide semiconductor layer as a channel region and a storage capacitor is electrically connected to a capacitor to form a node. The voltage of the node is boosted up in accordance with stored data by capacitive coupling through a storage capacitor and the potential is read with an amplifier circuit to distinguish data.

    摘要翻译： 即使在不提供电源的情况下也可以保存存储的数据的存储装置，并且可以高速读取存储的数据，而不开启包含在存储元件中的晶体管。 在存储装置中，具有包括作为沟道区的氧化物半导体层的晶体管和存储电容器的存储单元电连接到电容器以形成节点。 根据存储的数据，节点的电压通过电容耦合通过存储电容器升压，并且利用放大器电路读取电位以区分数据。

    Semiconductor memory device with oxide semiconductor transistor
    8.
    发明授权
    Semiconductor memory device with oxide semiconductor transistor 有权
    具有氧化物半导体晶体管的半导体存储器件

    公开(公告)号：US08675394B2

    公开(公告)日：2014-03-18

    申请号：US13191930

    申请日：2011-07-27

    申请人： Daisuke Matsubayashi

    发明人： Daisuke Matsubayashi

    IPC分类号： G11C11/24 ,  G11C11/34

    CPC分类号： H01L27/11517 ,  G11C11/403 ,  G11C16/0433 ,  H01L27/0207 ,  H01L27/1156 ,  H01L27/1211 ,  H01L27/1225

    摘要： An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Further, by reducing the number of source lines, the storage capacity per unit area is increased.

    摘要翻译： 目的在于提供一种半导体器件，其即使在未通电时也能够保持存储的数据，并且通过减少布线数量来实现高集成度。 半导体器件使用可以充分降低晶体管（例如，宽带隙半导体的氧化物半导体材料）的截止电流的材料形成。 当使用允许充分降低晶体管的截止电流的半导体材料时，可以长期保持数据。 一条线用作写入字线和用于读取的字线，一行用作写入的位线和用于读取的位线，从而减少了布线数量。 此外，通过减少源极线的数量，每单位面积的存储容量增加。

    MEMORY DEVICE
    9.
    发明申请
    MEMORY DEVICE 有权
    内存设备

    公开(公告)号：US20120262979A1

    公开(公告)日：2012-10-18

    申请号：US13443959

    申请日：2012-04-11

    申请人： Daisuke Matsubayashi

    发明人： Daisuke Matsubayashi

    IPC分类号： G11C5/06 ,  G11C7/10

    CPC分类号： G11C15/04 ,  G11C15/00 ,  G11C15/046

    摘要： A memory device includes a memory cell storing data as stored data, an output signal line, and a wiring to which a voltage is applied. The memory cell includes a comparison circuit performing a comparison operation between the stored data and search data and taking a conduction state or a non-conduction state in accordance with the operation result, and a field-effect transistor controlling writing and holding of the stored data. A voltage of the output signal line is equal to the voltage of the wiring when the comparison circuit is in the conduction state.

    摘要翻译： 存储器件包括存储数据作为存储数据的存储单元，输出信号线和施加了电压的布线。 存储单元包括比较电路，其根据运算结果进行所存储的数据与搜索数据之间的比较运算，并且根据运算结果进行导通状态或非导通状态;以及场效应晶体管，其控制所存储的数据的写入和保持 。 当比较电路处于导通状态时，输出信号线的电压等于布线的电压。