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    SURFACE PLASMON RESONANCE SENSOR AND BIOCHIP
    2.
    发明申请
    SURFACE PLASMON RESONANCE SENSOR AND BIOCHIP 失效
    表面等离子体共振传感器和生物技术

    公开(公告)号：US20090066962A1

    公开(公告)日：2009-03-12

    申请号：US12206022

    申请日：2008-09-08

    申请人： Daisuke Niwa ,  Dai Ohnishi

    发明人： Daisuke Niwa ,  Dai Ohnishi

    IPC分类号： G01N21/55

    CPC分类号： G01N21/553 ,  G01N21/554 ,  G01N21/7703

    摘要： The present invention relates to a surface plasmon resonance sensor which has a first dielectric layer, a metal layer disposed on the first dielectric layer, and a second dielectric layer covering the metal layer. The surface plasmon resonance sensor includes: a sensor main body provided with an opening for exposing a part of a surface of the metal layer on a side facing the second dielectric layer, and for allowing a measurement sample to be brought into contact with this surface; a light source for introducing a beam into the metal layer from one end of the metal layer in a longitudinal direction of the metal layer; and a detection unit detecting a beam emitted from the other end of the metal layer, has high sensitivity in measurement, is downsized, and is usable in a simple manner.

    摘要翻译： 表面等离子体共振传感器本发明涉及一种表面等离子体共振传感器，其具有第一电介质层，设置在第一电介质层上的金属层和覆盖该金属层的第二电介质层。 所述表面等离子体共振传感器包括：传感器主体，其设置有用于暴露所述金属层的面对所述第二介电层的一侧表面的一部分的开口，并且用于使所述测量样品与所述表面接触; 用于从所述金属层的所述金属层的纵向方向的一端引入光束到所述金属层的光源; 检测从金属层的另一端发射的光束的检测单元，测量灵敏度高，尺寸小，可以简单的使用。

    SEPARATION PURIFICATION METHOD AND MICROFLUIDIC CIRCUIT
    4.
    发明申请
    SEPARATION PURIFICATION METHOD AND MICROFLUIDIC CIRCUIT 审中-公开
    分离纯化方法和微流控电路

    公开(公告)号：US20110003285A1

    公开(公告)日：2011-01-06

    申请号：US12439831

    申请日：2007-12-14

    申请人： Daisuke Niwa

    发明人： Daisuke Niwa

    IPC分类号： C12Q1/68 ,  G01N33/50 ,  G01N33/48 ,  G01N30/00 ,  C12M1/34 ,  G01N27/30

    CPC分类号： C12N15/1006 ,  B01L3/502753 ,  B01L2300/0645 ,  B01L2300/0816 ,  B01L2300/087 ,  B01L2400/0409 ,  C07K1/14 ,  C07K17/14 ,  G01N21/554 ,  G01N33/587 ,  Y10T436/143333

    摘要： A simple and accurate separation purification method for object biomolecules or bio-associated substance through a particulate aggregative reaction is provided. A microfluidic circuit utilizing a particulate aggregate as a detection marker in a nonfluorescence method such as an electrochemical method or surface plasmon resonance is provided. The separation purification method comprises the steps of forming a particulate aggregate by a reaction between particulates modified with a labeling substance specifically reacting with a label object substance and biomolecules or a bio-associated substance containing the label object substance and separation-purifying the particulate aggregate. The microfluidic circuit utilizes this separation purification method.

    摘要翻译： 提供了一种通过颗粒聚集反应的物体生物分子或生物相关物质的简单而准确的分离纯化方法。 提供了一种利用微粒聚集体作为非荧光方法如电化学方法或表面等离子共振的检测标记的微流体回路。 分离纯化方法包括通过与标记物质特异性反应的标记物质和生物分子或含有标记物质的生物相关物质改性的颗粒之间的反应形成颗粒聚集体并分离净化颗粒聚集体的步骤。 微流体电路利用这种分离纯化方法。

    Semiconductor DNA sensing device and DNA sensing method
    5.
    发明申请
    Semiconductor DNA sensing device and DNA sensing method 审中-公开
    半导体DNA感测装置和DNA感测方法

    公开(公告)号：US20070207471A1

    公开(公告)日：2007-09-06

    申请号：US11514843

    申请日：2006-09-05

    申请人： Tetsuya Osaka ,  Daisuke Niwa ,  Norikazu Motohashi

    发明人： Tetsuya Osaka ,  Daisuke Niwa ,  Norikazu Motohashi

    IPC分类号： C12Q1/68 ,  C12M3/00 ,  H01L51/00

    CPC分类号： G01N27/4145 ,  Y10T436/143333

    摘要： A semiconductor DNA sensing device having a detection section is provided. The detection section comprises a structure of a probe DNA/a first organic monolayer/an insulating layer/a semiconductor. The field-effect transistor (FET) comprises a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, and the first insulating layer comprises silicon oxide or an inorganic oxide. The first organic monolayer formed on the first insulator layer comprises an organic molecule having a reactive functional group. The probe DNA contains 3 to 35 nucleotides, and this probe DNA is bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker. The semiconductor DNA sensing device of the present invention is extremely effective as an on-chip, high-sensitivity, micro multi-DNA sensing device, and an integrated device produced by using such semiconductor DNA sensing device is capable of sensing a DNA including a mismatch sequence such as single nucleotide polymorphism, and such device is indispensable for an advanced medicine and personalized medicine.

    摘要翻译： 提供了具有检测部的半导体DNA感测装置。 检测部分包括探针DNA /第一有机单层/绝缘层/半导体的结构。 场效应晶体管（FET）包括半导体衬底和形成在其上的第一绝缘体层作为反应性栅极绝缘体，并且第一绝缘层包括氧化硅或无机氧化物。 形成在第一绝缘体层上的第一有机单层包含具有反应性官能团的有机分子。 探针DNA含有3至35个核苷酸，该探针DNA直接或通过中间交联剂通过反应性官能团与第一有机单层结合。 本发明的半导体DNA感测装置作为片上，高灵敏度的微多DNA感测装置是非常有效的，并且通过使用这种半导体DNA感测装置制造的集成装置能够感测包括不匹配的DNA 序列如单核苷酸多态性，这种装置对先进药物和个性化药物是必不可少的。

    Multiplexed olfactory receptor-based microsurface plasmon polariton detector
    6.
    发明授权
    Multiplexed olfactory receptor-based microsurface plasmon polariton detector 有权
    基于多重嗅觉受体的微表面等离子体激元检测器

    公开(公告)号：US08748111B2

    公开(公告)日：2014-06-10

    申请号：US13015851

    申请日：2011-01-28

    申请人： Andreas Mershin ,  Brian Cook ,  Liselotte Kaiser ,  Johanna F. Bikker ,  Yoshikatsu Miura ,  Daisuke Niwa ,  Dai Ohnishi ,  Atsushi Tazuke ,  Shuguang Zhang

    发明人： Andreas Mershin ,  Brian Cook ,  Liselotte Kaiser ,  Johanna F. Bikker ,  Yoshikatsu Miura ,  Daisuke Niwa ,  Dai Ohnishi ,  Atsushi Tazuke ,  Shuguang Zhang

    IPC分类号： G01N33/53 ,  C07K2/00 ,  B82Y30/00 ,  G01N33/00 ,  G01N21/55

    CPC分类号： G01N21/553 ,  B82Y30/00 ,  C07K2/00 ,  G01N21/554 ,  G01N33/0031 ,  G01N2201/06113 ,  G01N2201/08

    摘要： The invention provides a bio-sensing nanodevice comprising: a stabilized G-protein coupled receptor on a support, a real time receptor-ligand binding detection method, a test composition delivery system and a test composition recognition program. The G-protein coupled receptor can be stabilized using surfactant peptide. The nanodevice provides a greater surface area for better precision and sensitivity to odorant detection. The invention further provides a microfluidic chip containing a stabilized G-protein coupled receptor immobilized on a support, and arranged in at least two dimensional microarray system. The invention also provides a method of delivering odorant comprising the step of manipulating the bubbles in complex microfluidic networks wherein the bubbles travel in a microfluidic channel carrying a variety of gas samples to a precise location on a chip. The invention further provides method of fabricating hOR17-4 olfactory receptor.

    摘要翻译： 本发明提供了一种生物感测纳米装置，其包括：载体上的稳定的G-蛋白偶联受体，实时受体 - 配体结合检测方法，测试组合物递送系统和测试组合物识别程序。 G蛋白偶联受体可以使用表面活性肽稳定。 纳米器件提供更大的表面积，以提高气味检测的精度和灵敏度。 本发明进一步提供了一种微流控芯片，其含有固定在载体上的稳定化的G蛋白偶联受体，并且被布置在至少二维微阵列系统中。 本发明还提供了一种递送加臭剂的方法，其包括在复杂微流体网络中操作气泡的步骤，其中气泡在携带各种气体样品的微流体通道中移动到芯片上的精确位置。 本发明还提供了制备hOR17-4嗅觉受体的方法。

    ANALYSIS CHIP, ANALYSIS SYSTEM, AND ANALYSIS METHOD
    7.
    发明申请
    ANALYSIS CHIP, ANALYSIS SYSTEM, AND ANALYSIS METHOD 审中-公开
    分析芯片，分析系统和分析方法

    公开(公告)号：US20120237950A1

    公开(公告)日：2012-09-20

    申请号：US13421934

    申请日：2012-03-16

    申请人： Yoshikatsu Imai ,  Daisuke Niwa

    发明人： Yoshikatsu Imai ,  Daisuke Niwa

    IPC分类号： G01N33/53 ,  C12M1/40 ,  G01N21/59 ,  G01N27/26 ,  G01N21/64 ,  G01N21/76

    CPC分类号： G01N27/3272 ,  G01N21/05 ,  G01N21/645 ,  G01N21/76 ,  G01N2021/0325 ,  G01N2021/0346

    摘要： An analysis chip for quantitative analysis by using a competitive reaction is provided. The analysis chip for analyzing a target substance to be identified in a liquid sample includes a base, and a flow path formed on the base. The flow path includes an introduction portion, for introducing the liquid sample; a reaction portion, disposed at a downstream side of the introduction portion, for subjecting the liquid sample to a competitive reaction; a discharge portion, disposed at a downstream side of the reaction portion; and a blocking portion, disposed between the reaction portion and the discharge portion, for inhibiting the flow of the liquid sample from the reaction portion to the discharge portion. The reaction portion accommodates a carrier prefixed with a specific binding substance for specifically binding the target substance to be identified or a competitive substance of the target substance to be identified.

    摘要翻译： 提供了一种通过使用竞争反应进行定量分析的分析芯片。 用于分析在液体样品中识别的目标物质的分析芯片包括基底和形成在基底上的流路。 流路包括用于引入液体样品的引入部分; 反应部分，设置在引入部分的下游侧，用于使液体样品经受竞争反应; 排出部，设置在所述反应部的下游侧; 以及设置在反应部分和排出部分之间的阻挡部分，用于抑制液体样品从反应部分流到排出部分。 反应部分容纳预先用特异性结合物质预先特异性结合待鉴定的目标物质或待鉴定目的物质的竞争性物质的载体。

    Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device
    8.
    发明授权
    Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device 有权
    半导体感测场效应晶体管，半导体感测器件，半导体传感器芯片和半导体感测器件

    公开(公告)号：US07838912B2

    公开(公告)日：2010-11-23

    申请号：US11660514

    申请日：2005-03-11

    申请人： Daisuke Niwa ,  Ichiro Koiwa ,  Tetsuya Osaka

    发明人： Daisuke Niwa ,  Ichiro Koiwa ,  Tetsuya Osaka

    IPC分类号： C12Q1/00

    CPC分类号： G01N27/414

    摘要： A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

    摘要翻译： 半导体感测场效应晶体管使用形成在栅极绝缘层上的有机单分子膜。 在半导体感测场效应晶体管和半导体感测装置中，栅极绝缘层具有堆叠结构，其中第二氧化硅层通过氮化硅层堆叠在第一氧化硅层上。 半导体传感器芯片和半导体感测装置设置有场效应晶体管芯片，其中栅极绝缘层，源电极和漏电极集成在硅板上，源极端子布线与源极连接，以及 漏极端子布线与漏电极连接。 在半导体传感器芯片和半导体感测装置中，晶体管芯片，源极端子布线和漏极端子布线被密封，以暴露未与晶体管芯片的栅极绝缘层连接的边缘部分和 源电极端子配线的源电极以及未与漏电极端子配线的漏电极连接的边缘部。

    Sensing Chip
    9.
    发明申请
    Sensing Chip 有权
    感应芯片

    公开(公告)号：US20090209028A1

    公开(公告)日：2009-08-20

    申请号：US12346950

    申请日：2008-12-31

    申请人： Huang Yi Dong ,  Rao Yi ,  Liu Fang ,  Zhang Wei ,  Peng Jiang De ,  Dai Ohnishi ,  Daisuke Niwa ,  Atsushi Tazuke ,  Yoshikatsu Miura

    发明人： Huang Yi Dong ,  Rao Yi ,  Liu Fang ,  Zhang Wei ,  Peng Jiang De ,  Dai Ohnishi ,  Daisuke Niwa ,  Atsushi Tazuke ,  Yoshikatsu Miura

    IPC分类号： C12M1/34 ,  G01N21/41

    CPC分类号： G01N21/553 ,  G01N21/41 ,  G01N21/7703

    摘要： There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.

    摘要翻译： 提供了一种能够通过利用远程表面等离子体激元测量折射率的感测芯片，精确地测量宽范围内的累积折射率，并且更容易实现测量密封。 本发明涉及一种感测芯片，其具有在底层上生长的薄金属膜或带状金属，并且具有限制薄膜的上表面和下表面上的折射率和介电缓冲层的电介质 金属膜或带状金属。 介电缓冲层附着在薄金属膜或带状金属上。 金属薄膜或带状金属和缓冲层夹在两个电介质层之间。 在上部电介质层的表面形成孔作为测量槽。

    SURFACE PLASMON RESONANCE SENSOR CHIP
    10.
    发明申请
    SURFACE PLASMON RESONANCE SENSOR CHIP 有权
    表面等离子体共振传感器芯片

    公开(公告)号：US20090195783A1

    公开(公告)日：2009-08-06

    申请号：US12365307

    申请日：2009-02-04

    申请人： Atsushi Tazuke ,  Daisuke Niwa ,  Yoshikatsu Miura ,  Dai Ohnishi

    发明人： Atsushi Tazuke ,  Daisuke Niwa ,  Yoshikatsu Miura ,  Dai Ohnishi

    IPC分类号： G01N21/55

    CPC分类号： G01N21/553 ,  G01N21/7703 ,  G01N33/54373 ,  G01N2021/7776 ,  G01N2021/7783

    摘要： A surface plasmon resonance sensor chip includes: a first dielectric layer; a metal layer disposed on the first dielectric layer; and a second dielectric layer covering the metal layer, the chip being provided with an opening that makes a part of a surface on the side of the second dielectric layer of the metal layer be exposed, and allows a measurement sample and the surface on the side of the second dielectric layer to contact each other, wherein an organic molecule film is provided at least one of between the first dielectric layer and the metal layer, and between the metal layer and the second dielectric layer.

    摘要翻译： 表面等离子体共振传感器芯片包括：第一介电层; 设置在所述第一电介质层上的金属层; 以及覆盖所述金属层的第二电介质层，所述芯片设置有使金属层的第二电介质层侧的表面的一部分露出的开口，并且允许测量样品和侧面上的表面 的第二电介质层彼此接触，其中在所述第一介电层和所述金属层之间以及所述金属层和所述第二介电层之间的至少一个上设置有机分子膜。