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    Waveguide path coupling-type photodiode
    1.
    发明授权
    Waveguide path coupling-type photodiode 有权
    波导路耦合型光电二极管

    公开(公告)号：US08467637B2

    公开(公告)日：2013-06-18

    申请号：US12598162

    申请日：2008-04-30

    申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    IPC分类号： G02B6/12 ,  G02B6/26 ,  H01L29/47

    CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

    摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

    摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

    PHOTODETECTOR, OPTICAL COMMUNICATION DEVICE EQUIPPED WITH THE SAME, METHOD FOR MAKING OF PHOTODETECTOR, AND METHOD FOR MAKING OF OPTICAL COMMUNICATION DEVICE
    2.
    发明申请
    PHOTODETECTOR, OPTICAL COMMUNICATION DEVICE EQUIPPED WITH THE SAME, METHOD FOR MAKING OF PHOTODETECTOR, AND METHOD FOR MAKING OF OPTICAL COMMUNICATION DEVICE 有权
    光电转换器，配备该光通信设备的光通信设备，光电转换器的制作方法和光通信设备的制作方法

    公开(公告)号：US20130113064A1

    公开(公告)日：2013-05-09

    申请号：US13810360

    申请日：2011-06-15

    申请人： Daisuke Okamoto ,  Junichi Fujikata

    发明人： Daisuke Okamoto ,  Junichi Fujikata

    IPC分类号： H01L31/0232

    CPC分类号： G02B6/12004 ,  G02B6/4214 ,  G02B6/4246 ,  G02F1/00 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/1085

    摘要： The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

    摘要翻译： 本发明提供了一种解决光电检测器的灵敏度低的问题的光检测器，配备该光检测器的光通信装置及其制造方法，以及制造该光通信装置的方法。 该光检测器包括基板，布置在基板上的下包覆层，布置在下包层上的光波导，布置在光波导上的中间层，布置在中间层上的光吸收层，一对电极， 所述光吸收层，其中所述光吸收层包括IV族或III-V族单晶半导体，并且所述光吸收层吸收通过所述光波导传播的光信号。

    Optical phase modulation element and optical modulator using the same
    3.
    发明授权
    Optical phase modulation element and optical modulator using the same 有权
    光相位调制元件和使用其的光调制器

    公开(公告)号：US08116600B2

    公开(公告)日：2012-02-14

    申请号：US12526107

    申请日：2007-12-25

    申请人： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

    发明人： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

    IPC分类号： G02F1/01 ,  G02F1/035

    CPC分类号： G02B6/1226 ,  B82Y20/00 ,  G02B6/12007 ,  G02F1/015 ,  G02F1/025 ,  G02F2202/20 ,  G02F2203/10 ,  G02F2203/50

    摘要： Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.

    摘要翻译： 提供了一种小尺寸光相位调制元件和使用它的光调制器。 光学相位调制元件包括具有由金属材料制成的包层的等离子体波导，所述金属材料具有在所使用的波长中具有负实部的复介电常数和由具有正实部的复介电常数的介电金属材料形成的芯 在使用的波长。 等离子体波导连接到包括具有正实部的复介电常数的包层和芯的光波导。 至少部分地由相同的半导体材料形成等离子体波导的核心和光波导的核心。 等离子体波导具有在施加电压时对入射光进行相位调制的功能。

    Image sensor for surpressing movement of an image sensor due to change in urging direction of a spring
    4.
    发明授权
    Image sensor for surpressing movement of an image sensor due to change in urging direction of a spring 失效
    图像传感器，用于由于弹簧的推动方向的变化而抑制图像传感器的运动

    公开(公告)号：US07961223B2

    公开(公告)日：2011-06-14

    申请号：US12273832

    申请日：2008-11-19

    申请人： Daisuke Okamoto ,  Hisao Kai

    发明人： Daisuke Okamoto ,  Hisao Kai

    IPC分类号： H04N5/228 ,  H04N5/225 ,  G03B17/00

    CPC分类号： H04N5/2253

    摘要： In this image sensor, a first spring member is so arranged that the urging direction of the first spring member is inclined with respect to the axis of a first rotating shaft of a first driving source thereby inclining a transmission member urged by the first spring member with respect to the axis of the first rotating shaft and bringing the transmission member into contact with a first pressing member engaging with the first rotating shaft, so that the first pressing member engages with the first rotating shaft while the axis of the first pressing member is inclined with respect to the axis of the first rotating shaft.

    摘要翻译： 在该图像传感器中，第一弹簧部件被布置成使得第一弹簧部件的推动方向相对于第一驱动源的第一旋转轴的轴线倾斜，从而使由第一弹簧部件推压的传动部件倾斜， 相对于第一旋转轴的轴线并使传动构件与与第一旋转轴接合的第一按压构件接触，使得第一按压构件与第一旋转轴接合，同时第一按压构件的轴线倾斜 相对于第一旋转轴的轴线。

    POWDER FOR MAGNETIC CORE, POWDER MAGNETIC CORE AND THEIR PRODUCTION METHODS
    6.
    发明申请
    POWDER FOR MAGNETIC CORE, POWDER MAGNETIC CORE AND THEIR PRODUCTION METHODS 审中-公开
    磁芯粉，粉末磁芯及其生产方法

    公开(公告)号：US20100266861A1

    公开(公告)日：2010-10-21

    申请号：US12740741

    申请日：2008-10-30

    申请人： Shin Tajima ,  Masaaki Tani ,  Daisuke Okamoto ,  Eisuke Hoshina ,  Hidefumi Kishimoto ,  Daisuke Ichigozaki

    发明人： Shin Tajima ,  Masaaki Tani ,  Daisuke Okamoto ,  Eisuke Hoshina ,  Hidefumi Kishimoto ,  Daisuke Ichigozaki

    IPC分类号： H01F3/08 ,  B22F1/02 ,  H01F41/02

    CPC分类号： H01F1/24 ,  B22F1/0062 ,  B22F2003/026 ,  B22F2003/248 ,  B22F2998/10 ,  C21D8/1216 ,  C21D8/1244 ,  C22C1/002 ,  C22C33/02 ,  H01F1/14 ,  H01F1/26 ,  H01F41/0246 ,  Y10T428/12014 ,  Y10T428/12181 ,  B22F9/082 ,  B22F3/02 ,  B22F3/24

    摘要： A method for producing a powder for a magnetic core, in which an alkoxide film formation step and a silicone resin film formation step are carried out to form an insulation film composed of an alkoxide film and a silicone resin film on the surface of a pure iron powder, wherein the alkoxide film formation step comprises immersing a pure iron powder in an alkoxide-containing solution which is prepared by mixing a Si alkoxide having at least one organic group having a polar group comprising at least one of N, P, S and O atoms and an Al alkoxide with a dehydrated organic solvent, and drying to remove the dehydrated organic solvent, thereby forming an alkoxide film comprising an Al—Si—O type composite oxide on the surface of the pure iron powder; and the silicone resin film formation step comprises immersing the pure iron powder having the alkoxide film formed thereon in a silicone resin-containing solution which is prepared by mixing a silicone resin with an organic solvent, and drying to remove the organic solvent, thereby forming a silicone resin film on the alkoxide film.

    摘要翻译： 一种制造用于磁芯的粉末的方法，其中进行醇盐膜形成步骤和硅树脂膜形成步骤以在纯铁的表面上形成由醇盐膜和硅树脂膜构成的绝缘膜 粉末，其中所述醇盐膜形成步骤包括将纯铁粉浸入含醇盐的溶液中，所述溶液通过混合具有至少一个具有极性基团的有机基团的Si醇盐，所述极性基团包含N，P，S和O中的至少一种 原料和Al醇盐与脱水有机溶剂反应，干燥除去脱水有机溶剂，由此在纯铁粉末的表面上形成包含Al-Si-O型复合氧化物的醇盐膜; 有机硅树脂成膜工序包括将其上形成有醇盐膜的纯铁粉浸入通过将有机硅树脂与有机溶剂混合制备的含硅树脂的溶液中，并干燥以除去有机溶剂，从而形成 硅氧烷树脂膜上的醇盐膜。

    PHOTODIODE
    8.
    发明申请
    PHOTODIODE 有权
    光电

    公开(公告)号：US20100013040A1

    公开(公告)日：2010-01-21

    申请号：US12518729

    申请日：2007-12-13

    申请人： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

    发明人： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

    摘要： A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

    摘要翻译： 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。